KR102369396B1 - TiO2 매개체층을 포함한 전자 알루미늄 포일을 제조하는 전처리공법 - Google Patents
TiO2 매개체층을 포함한 전자 알루미늄 포일을 제조하는 전처리공법 Download PDFInfo
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- KR102369396B1 KR102369396B1 KR1020207015398A KR20207015398A KR102369396B1 KR 102369396 B1 KR102369396 B1 KR 102369396B1 KR 1020207015398 A KR1020207015398 A KR 1020207015398A KR 20207015398 A KR20207015398 A KR 20207015398A KR 102369396 B1 KR102369396 B1 KR 102369396B1
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- South Korea
- Prior art keywords
- solution
- azelaic acid
- foil
- acid solution
- tio
- Prior art date
Links
- 239000011888 foil Substances 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 229910052782 aluminium Inorganic materials 0.000 title claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims description 10
- 238000000034 method Methods 0.000 title abstract description 8
- 238000007781 pre-processing Methods 0.000 title description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 title 2
- 239000000243 solution Substances 0.000 claims abstract description 36
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims abstract description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 17
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000006243 chemical reaction Methods 0.000 claims abstract description 12
- 239000011259 mixed solution Substances 0.000 claims abstract description 12
- 229910010413 TiO 2 Inorganic materials 0.000 claims abstract description 11
- 239000000126 substance Substances 0.000 claims abstract description 11
- 238000005470 impregnation Methods 0.000 claims abstract description 9
- 239000010936 titanium Substances 0.000 claims abstract description 9
- DCKVFVYPWDKYDN-UHFFFAOYSA-L oxygen(2-);titanium(4+);sulfate Chemical compound [O-2].[Ti+4].[O-]S([O-])(=O)=O DCKVFVYPWDKYDN-UHFFFAOYSA-L 0.000 claims abstract description 8
- 238000002203 pretreatment Methods 0.000 claims abstract description 8
- 229910000348 titanium sulfate Inorganic materials 0.000 claims abstract description 8
- 239000008213 purified water Substances 0.000 claims abstract description 6
- BDJRBEYXGGNYIS-UHFFFAOYSA-N nonanedioic acid Chemical compound OC(=O)CCCCCCCC(O)=O BDJRBEYXGGNYIS-UHFFFAOYSA-N 0.000 claims description 26
- 238000010438 heat treatment Methods 0.000 claims description 15
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 10
- 238000005406 washing Methods 0.000 claims description 9
- OCLWYHKNYKCKHU-UHFFFAOYSA-N nonanedioic acid;sodium Chemical compound [Na].OC(=O)CCCCCCCC(O)=O OCLWYHKNYKCKHU-UHFFFAOYSA-N 0.000 claims description 8
- 238000007654 immersion Methods 0.000 claims description 7
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 5
- LFVGISIMTYGQHF-UHFFFAOYSA-N ammonium dihydrogen phosphate Chemical compound [NH4+].OP(O)([O-])=O LFVGISIMTYGQHF-UHFFFAOYSA-N 0.000 claims description 5
- 229910000387 ammonium dihydrogen phosphate Inorganic materials 0.000 claims description 5
- 238000009835 boiling Methods 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 5
- 235000019837 monoammonium phosphate Nutrition 0.000 claims description 5
- QFYNUCAKHMSPCY-UHFFFAOYSA-L disodium;nonanedioate Chemical compound [Na+].[Na+].[O-]C(=O)CCCCCCCC([O-])=O QFYNUCAKHMSPCY-UHFFFAOYSA-L 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 5
- 229910052708 sodium Inorganic materials 0.000 description 5
- 239000011734 sodium Substances 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000000047 product Substances 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/06—Anodisation of aluminium or alloys based thereon characterised by the electrolytes used
- C25D11/10—Anodisation of aluminium or alloys based thereon characterised by the electrolytes used containing organic acids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
- H01G9/045—Electrodes or formation of dielectric layers thereon characterised by the material based on aluminium
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/16—Pretreatment, e.g. desmutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/055—Etched foil electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Treatment Of Metals (AREA)
- Cell Electrode Carriers And Collectors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811036688.3A CN109183116B (zh) | 2018-09-06 | 2018-09-06 | 一种制备含TiO2介质层电子铝箔的前处理工艺 |
| CN201811036688.3 | 2018-09-06 | ||
| PCT/CN2018/121671 WO2020048045A1 (zh) | 2018-09-06 | 2018-12-18 | 一种制备含TiO2介质层电子铝箔的前处理工艺 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20200078602A KR20200078602A (ko) | 2020-07-01 |
| KR102369396B1 true KR102369396B1 (ko) | 2022-03-03 |
Family
ID=64914846
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020207015398A KR102369396B1 (ko) | 2018-09-06 | 2018-12-18 | TiO2 매개체층을 포함한 전자 알루미늄 포일을 제조하는 전처리공법 |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR102369396B1 (zh) |
| CN (1) | CN109183116B (zh) |
| WO (1) | WO2020048045A1 (zh) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111710528B (zh) * | 2020-06-22 | 2021-10-22 | 广西大学 | 一种含复合介质膜中低压化成箔的制备方法 |
| CN113026087B (zh) * | 2021-04-29 | 2021-08-10 | 南通海星电子股份有限公司 | 一种汽车电子用纳微孔结构铝电极箔制备方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1502719A (zh) * | 2002-11-27 | 2004-06-09 | 电子科技大学 | 纳米复合高介电常数铝氧化膜生长技术 |
| CN101826397A (zh) * | 2010-04-27 | 2010-09-08 | 四川中雅科技有限公司 | 中高压铝电解电容器用电极箔的五级制造方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3515702B2 (ja) * | 1999-03-31 | 2004-04-05 | エルナー株式会社 | 電解コンデンサ用電極箔およびその製造方法並びに電解コンデンサ |
| JP4572649B2 (ja) * | 2004-10-12 | 2010-11-04 | パナソニック株式会社 | 電解コンデンサ用電極箔の製造方法 |
| WO2006117985A1 (ja) * | 2005-04-27 | 2006-11-09 | Nippon Steel Corporation | コンデンサ用電極箔 |
| CN100463086C (zh) * | 2005-06-13 | 2009-02-18 | 西安交通大学 | 铝电解电容器阳极箔的制备方法 |
| CN101707141A (zh) * | 2009-11-09 | 2010-05-12 | 广西贺州市桂东电子科技有限责任公司 | 一种铝电解电容器阳极箔的制造方法 |
| CN102360955B (zh) * | 2011-09-19 | 2013-05-08 | 常州大学 | 一种采用电化学沉积法提高铝电极箔比容的方法 |
| US9181629B2 (en) * | 2013-10-30 | 2015-11-10 | Apple Inc. | Methods for producing white appearing metal oxide films by positioning reflective particles prior to or during anodizing processes |
| CN104593848A (zh) * | 2014-12-27 | 2015-05-06 | 西安交通大学 | 一种提高腐蚀铝箔比容的表面改性方法 |
| CN106245087A (zh) * | 2016-09-14 | 2016-12-21 | 南通海星电子股份有限公司 | 铝电解电容器用低压化成箔的前处理方法 |
| CN107354498B (zh) * | 2017-07-18 | 2019-04-30 | 丰宾电子（深圳）有限公司 | 一种高压高容量的铝电解电容器用电极箔的制造方法 |
| CN107993846B (zh) * | 2017-11-07 | 2019-06-14 | 佛山科学技术学院 | 一种提高中高压铝电解电容器用化成箔耐水性的处理方法 |
-
2018
- 2018-09-06 CN CN201811036688.3A patent/CN109183116B/zh active Active
- 2018-12-18 KR KR1020207015398A patent/KR102369396B1/ko active IP Right Grant
- 2018-12-18 WO PCT/CN2018/121671 patent/WO2020048045A1/zh active Application Filing
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1502719A (zh) * | 2002-11-27 | 2004-06-09 | 电子科技大学 | 纳米复合高介电常数铝氧化膜生长技术 |
| CN101826397A (zh) * | 2010-04-27 | 2010-09-08 | 四川中雅科技有限公司 | 中高压铝电解电容器用电极箔的五级制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109183116B (zh) | 2020-07-17 |
| KR20200078602A (ko) | 2020-07-01 |
| CN109183116A (zh) | 2019-01-11 |
| WO2020048045A1 (zh) | 2020-03-12 |
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