KR102306200B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR102306200B1
KR102306200B1 KR1020150009104A KR20150009104A KR102306200B1 KR 102306200 B1 KR102306200 B1 KR 102306200B1 KR 1020150009104 A KR1020150009104 A KR 1020150009104A KR 20150009104 A KR20150009104 A KR 20150009104A KR 102306200 B1 KR102306200 B1 KR 102306200B1
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South Korea
Prior art keywords
oxide semiconductor
region
layer
semiconductor layer
transistor
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Expired - Fee Related
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KR1020150009104A
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Korean (ko)
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KR20150088728A (ko
Inventor
다이고 이토
가주야 하나오카
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H01L29/7869—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H01L29/78606—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile

Landscapes

  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Liquid Crystal (AREA)
KR1020150009104A 2014-01-24 2015-01-20 반도체 장치 Expired - Fee Related KR102306200B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014011646 2014-01-24
JPJP-P-2014-011646 2014-01-24

Publications (2)

Publication Number Publication Date
KR20150088728A KR20150088728A (ko) 2015-08-03
KR102306200B1 true KR102306200B1 (ko) 2021-09-30

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Family Applications (1)

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KR1020150009104A Expired - Fee Related KR102306200B1 (ko) 2014-01-24 2015-01-20 반도체 장치

Country Status (3)

Country Link
US (1) US10263117B2 (enExample)
JP (2) JP6514512B2 (enExample)
KR (1) KR102306200B1 (enExample)

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JP6636755B2 (ja) * 2015-09-09 2020-01-29 株式会社半導体エネルギー研究所 半導体装置
US10868045B2 (en) * 2015-12-11 2020-12-15 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device, and electronic device
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US11227825B2 (en) * 2015-12-21 2022-01-18 Intel Corporation High performance integrated RF passives using dual lithography process
US10847656B2 (en) * 2015-12-23 2020-11-24 Intel Corporation Fabrication of non-planar IGZO devices for improved electrostatics
CN108292672B (zh) * 2015-12-23 2022-04-12 英特尔公司 用于igzo非平面器件的环绕式导电金属氧化物接触部的制作
US9882064B2 (en) * 2016-03-10 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Transistor and electronic device
US10741587B2 (en) * 2016-03-11 2020-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, semiconductor wafer, module, electronic device, and manufacturing method the same
KR102330605B1 (ko) * 2016-06-22 2021-11-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US10374083B1 (en) * 2018-01-17 2019-08-06 International Business Machines Corporation Vertical fin field effect transistor with reduced gate length variations
KR102630641B1 (ko) 2018-01-25 2024-01-30 삼성디스플레이 주식회사 표시장치 및 그의 제조방법
JP7317802B2 (ja) * 2018-03-29 2023-07-31 株式会社半導体エネルギー研究所 半導体装置
US20200119085A1 (en) 2018-10-10 2020-04-16 Glo Ab Vertical stacks of light emitting diodes and control transistors and method of making thereof

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