KR102285776B1 - 기판 세정 장치 및 기판 세정 방법 - Google Patents

기판 세정 장치 및 기판 세정 방법 Download PDF

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KR102285776B1
KR102285776B1 KR1020207033239A KR20207033239A KR102285776B1 KR 102285776 B1 KR102285776 B1 KR 102285776B1 KR 1020207033239 A KR1020207033239 A KR 1020207033239A KR 20207033239 A KR20207033239 A KR 20207033239A KR 102285776 B1 KR102285776 B1 KR 102285776B1
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substrate
holding layer
particle holding
heated
removal
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Korean (ko)
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KR20200133020A (ko
Inventor
유키후미 요시다
아유미 히구치
나오코 야마구치
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가부시키가이샤 스크린 홀딩스
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Priority claimed from PCT/JP2017/046090 external-priority patent/WO2018128093A1/ja
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    • H01L21/67028—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0014—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by incorporation in a layer which is removed with the contaminants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/02052—
    • H01L21/304—
    • H01L21/67098—
    • H01L21/6715—
    • H01L21/67248—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

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  • Cleaning Or Drying Semiconductors (AREA)
KR1020207033239A 2017-01-05 2017-12-22 기판 세정 장치 및 기판 세정 방법 Active KR102285776B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2017000676 2017-01-05
JPJP-P-2017-000676 2017-01-05
JPJP-P-2017-241845 2017-12-18
JP2017241845A JP6951229B2 (ja) 2017-01-05 2017-12-18 基板洗浄装置および基板洗浄方法
KR1020197018180A KR102182951B1 (ko) 2017-01-05 2017-12-22 기판 세정 장치 및 기판 세정 방법
PCT/JP2017/046090 WO2018128093A1 (ja) 2017-01-05 2017-12-22 基板洗浄装置および基板洗浄方法

Related Parent Applications (1)

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KR1020197018180A Division KR102182951B1 (ko) 2017-01-05 2017-12-22 기판 세정 장치 및 기판 세정 방법

Publications (2)

Publication Number Publication Date
KR20200133020A KR20200133020A (ko) 2020-11-25
KR102285776B1 true KR102285776B1 (ko) 2021-08-03

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KR1020207033239A Active KR102285776B1 (ko) 2017-01-05 2017-12-22 기판 세정 장치 및 기판 세정 방법
KR1020197018180A Active KR102182951B1 (ko) 2017-01-05 2017-12-22 기판 세정 장치 및 기판 세정 방법

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Country Status (5)

Country Link
US (1) US11413662B2 (https=)
JP (1) JP6951229B2 (https=)
KR (2) KR102285776B1 (https=)
CN (1) CN110121762B (https=)
TW (2) TWI682455B (https=)

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* Cited by examiner, † Cited by third party
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CN116646279A (zh) * 2017-01-05 2023-08-25 株式会社斯库林集团 基板清洗装置及基板清洗方法
TWI755609B (zh) 2017-09-22 2022-02-21 日商斯庫林集團股份有限公司 基板洗淨方法及基板洗淨裝置
JP7126429B2 (ja) * 2018-11-22 2022-08-26 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP2020096115A (ja) 2018-12-14 2020-06-18 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 基板洗浄液、これを用いる洗浄された基板の製造方法およびデバイスの製造方法
JP7116676B2 (ja) * 2018-12-14 2022-08-10 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP2020094152A (ja) 2018-12-14 2020-06-18 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 基板洗浄液、これを用いる洗浄された基板の製造方法およびデバイスの製造方法
JP7191748B2 (ja) * 2019-03-25 2022-12-19 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP7344049B2 (ja) 2019-08-29 2023-09-13 株式会社Ｓｃｒｅｅｎホールディングス 半導体装置形成方法および基板処理装置
JP2021190637A (ja) 2020-06-03 2021-12-13 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH 基板洗浄液、これを用いる洗浄された基板の製造方法およびデバイスの製造方法
KR102615758B1 (ko) 2021-05-10 2023-12-19 세메스 주식회사 기판 처리 장치 및 방법
KR102712483B1 (ko) * 2021-12-28 2024-10-04 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP2024109321A (ja) 2023-02-01 2024-08-14 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法

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Also Published As

Publication number Publication date
KR20200133020A (ko) 2020-11-25
JP2018110220A (ja) 2018-07-12
KR102182951B1 (ko) 2020-11-25
TWI682455B (zh) 2020-01-11
JP6951229B2 (ja) 2021-10-20
US11413662B2 (en) 2022-08-16
TW201921481A (zh) 2019-06-01
US20200086360A1 (en) 2020-03-19
TWI651763B (zh) 2019-02-21
KR20190085110A (ko) 2019-07-17
CN110121762B (zh) 2023-06-16
TW201834012A (zh) 2018-09-16
CN110121762A (zh) 2019-08-13

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