CN110121762B - 基板清洗装置及基板清洗方法 - Google Patents

基板清洗装置及基板清洗方法 Download PDF

Info

Publication number
CN110121762B
CN110121762B CN201780080558.7A CN201780080558A CN110121762B CN 110121762 B CN110121762 B CN 110121762B CN 201780080558 A CN201780080558 A CN 201780080558A CN 110121762 B CN110121762 B CN 110121762B
Authority
CN
China
Prior art keywords
substrate
retaining layer
liquid
particle
heated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201780080558.7A
Other languages
English (en)
Chinese (zh)
Other versions
CN110121762A (zh
Inventor
吉田幸史
樋口鲇美
山口直子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Screen Holdings Co Ltd
Original Assignee
Screen Holdings Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Screen Holdings Co Ltd filed Critical Screen Holdings Co Ltd
Priority to CN202310622850.4A priority Critical patent/CN116646279A/zh
Priority claimed from PCT/JP2017/046090 external-priority patent/WO2018128093A1/ja
Publication of CN110121762A publication Critical patent/CN110121762A/zh
Application granted granted Critical
Publication of CN110121762B publication Critical patent/CN110121762B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0014—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by incorporation in a layer which is removed with the contaminants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
CN201780080558.7A 2017-01-05 2017-12-22 基板清洗装置及基板清洗方法 Active CN110121762B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310622850.4A CN116646279A (zh) 2017-01-05 2017-12-22 基板清洗装置及基板清洗方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2017-000676 2017-01-05
JP2017000676 2017-01-05
JP2017241845A JP6951229B2 (ja) 2017-01-05 2017-12-18 基板洗浄装置および基板洗浄方法
JP2017-241845 2017-12-18
PCT/JP2017/046090 WO2018128093A1 (ja) 2017-01-05 2017-12-22 基板洗浄装置および基板洗浄方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202310622850.4A Division CN116646279A (zh) 2017-01-05 2017-12-22 基板清洗装置及基板清洗方法

Publications (2)

Publication Number Publication Date
CN110121762A CN110121762A (zh) 2019-08-13
CN110121762B true CN110121762B (zh) 2023-06-16

Family

ID=62844604

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201780080558.7A Active CN110121762B (zh) 2017-01-05 2017-12-22 基板清洗装置及基板清洗方法

Country Status (5)

Country Link
US (1) US11413662B2 (https=)
JP (1) JP6951229B2 (https=)
KR (2) KR102285776B1 (https=)
CN (1) CN110121762B (https=)
TW (2) TWI682455B (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116646279A (zh) * 2017-01-05 2023-08-25 株式会社斯库林集团 基板清洗装置及基板清洗方法
TWI755609B (zh) 2017-09-22 2022-02-21 日商斯庫林集團股份有限公司 基板洗淨方法及基板洗淨裝置
JP7126429B2 (ja) * 2018-11-22 2022-08-26 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP2020096115A (ja) 2018-12-14 2020-06-18 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 基板洗浄液、これを用いる洗浄された基板の製造方法およびデバイスの製造方法
JP7116676B2 (ja) * 2018-12-14 2022-08-10 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP2020094152A (ja) 2018-12-14 2020-06-18 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 基板洗浄液、これを用いる洗浄された基板の製造方法およびデバイスの製造方法
JP7191748B2 (ja) * 2019-03-25 2022-12-19 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP7344049B2 (ja) 2019-08-29 2023-09-13 株式会社Ｓｃｒｅｅｎホールディングス 半導体装置形成方法および基板処理装置
JP2021190637A (ja) 2020-06-03 2021-12-13 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH 基板洗浄液、これを用いる洗浄された基板の製造方法およびデバイスの製造方法
KR102615758B1 (ko) 2021-05-10 2023-12-19 세메스 주식회사 기판 처리 장치 및 방법
KR102712483B1 (ko) * 2021-12-28 2024-10-04 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP2024109321A (ja) 2023-02-01 2024-08-14 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011101970A (ja) * 2009-11-10 2011-05-26 Canon Inc 記録装置および記録方法
CN104624561A (zh) * 2013-11-13 2015-05-20 东京毅力科创株式会社 基板清洗方法、基板清洗系统
CN105321855A (zh) * 2014-07-31 2016-02-10 东京毅力科创株式会社 基板处理系统、基板清洗方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11101970A (ja) * 1997-09-29 1999-04-13 Advanced Display Inc 基板洗浄方法
US20020088608A1 (en) * 1999-07-26 2002-07-11 Park Chan-Hoon Method and apparatus for heating a wafer, and method and apparatus for baking a photoresist film on a wafer
US20040242121A1 (en) 2003-05-16 2004-12-02 Kazuto Hirokawa Substrate polishing apparatus
US7799141B2 (en) * 2003-06-27 2010-09-21 Lam Research Corporation Method and system for using a two-phases substrate cleaning compound
US20060154186A1 (en) 2005-01-07 2006-07-13 Advanced Technology Materials, Inc. Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings
JP4727355B2 (ja) 2005-09-13 2011-07-20 株式会社フジクラ 成膜方法
JP2011192885A (ja) * 2010-03-16 2011-09-29 Toshiba Corp 半導体基板の洗浄方法
JP5254308B2 (ja) 2010-12-27 2013-08-07 東京エレクトロン株式会社 液処理装置、液処理方法及びその液処理方法を実行させるためのプログラムを記録した記録媒体
KR101811066B1 (ko) * 2011-07-12 2017-12-20 도쿄엘렉트론가부시키가이샤 액처리 장치 및 액처리 방법
JP2014039014A (ja) * 2012-07-20 2014-02-27 Central Glass Co Ltd 撥水性保護膜及び保護膜形成用薬液
JP6054343B2 (ja) 2012-08-07 2016-12-27 東京エレクトロン株式会社 基板洗浄装置、基板洗浄システム、基板洗浄方法および記憶媒体
JP5586734B2 (ja) 2012-08-07 2014-09-10 東京エレクトロン株式会社 基板洗浄装置、基板洗浄システム、基板洗浄方法および記憶媒体
US8898928B2 (en) * 2012-10-11 2014-12-02 Lam Research Corporation Delamination drying apparatus and method
JP6000822B2 (ja) 2012-11-26 2016-10-05 東京エレクトロン株式会社 基板洗浄方法および基板洗浄システム
JP5543633B2 (ja) * 2012-11-26 2014-07-09 東京エレクトロン株式会社 基板洗浄システム、基板洗浄方法および記憶媒体
TWI517235B (zh) 2013-03-01 2016-01-11 栗田工業股份有限公司 半導體基板洗淨系統以及半導體基板的洗淨方法
US20150064911A1 (en) * 2013-08-27 2015-03-05 Tokyo Electron Limited Substrate processing method, substrate processing apparatus and storage medium
JP5977720B2 (ja) * 2013-08-27 2016-08-24 東京エレクトロン株式会社 基板処理方法、基板処理システムおよび記憶媒体
JP6308910B2 (ja) * 2013-11-13 2018-04-11 東京エレクトロン株式会社 基板洗浄方法、基板洗浄システムおよび記憶媒体
WO2017056746A1 (ja) * 2015-09-30 2017-04-06 Jsr株式会社 半導体基板洗浄用膜形成組成物及び半導体基板の洗浄方法
US10734255B2 (en) * 2016-05-25 2020-08-04 Tokyo Electron Limited Substrate cleaning method, substrate cleaning system and memory medium

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011101970A (ja) * 2009-11-10 2011-05-26 Canon Inc 記録装置および記録方法
CN104624561A (zh) * 2013-11-13 2015-05-20 东京毅力科创株式会社 基板清洗方法、基板清洗系统
CN105321855A (zh) * 2014-07-31 2016-02-10 东京毅力科创株式会社 基板处理系统、基板清洗方法

Also Published As

Publication number Publication date
KR20200133020A (ko) 2020-11-25
JP2018110220A (ja) 2018-07-12
KR102182951B1 (ko) 2020-11-25
KR102285776B1 (ko) 2021-08-03
TWI682455B (zh) 2020-01-11
JP6951229B2 (ja) 2021-10-20
US11413662B2 (en) 2022-08-16
TW201921481A (zh) 2019-06-01
US20200086360A1 (en) 2020-03-19
TWI651763B (zh) 2019-02-21
KR20190085110A (ko) 2019-07-17
TW201834012A (zh) 2018-09-16
CN110121762A (zh) 2019-08-13

Similar Documents

Publication Publication Date Title
CN110121762B (zh) 基板清洗装置及基板清洗方法
CN103567169B (zh) 基板清洗装置、基板清洗系统以及基板清洗方法
KR101932160B1 (ko) 기판 세정 시스템, 기판 세정 방법 및 기억 매체
KR101822950B1 (ko) 기판 세정 방법 및 기판 세정 시스템
CN110060924B (zh) 基板清洗方法、基板清洗系统和存储介质
TWI580485B (zh) Substrate cleaning method, substrate cleaning system and memory media
CN107437517A (zh) 基板清洗方法、基板清洗系统以及存储介质
JP7053835B2 (ja) 基板処理方法及び基板処理装置
JP6982478B2 (ja) 基板洗浄方法および基板洗浄装置
JP7232299B2 (ja) 基板洗浄装置および基板洗浄方法
TW201820406A (zh) 基板處理方法及基板處理裝置
CN116387180A (zh) 半导体工艺系统及基板处理方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant