KR102163532B1 - 반도체 장치, 세라믹스 회로 기판 및 반도체 장치의 제조 방법 - Google Patents

반도체 장치, 세라믹스 회로 기판 및 반도체 장치의 제조 방법 Download PDF

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KR102163532B1
KR102163532B1 KR1020157008678A KR20157008678A KR102163532B1 KR 102163532 B1 KR102163532 B1 KR 102163532B1 KR 1020157008678 A KR1020157008678 A KR 1020157008678A KR 20157008678 A KR20157008678 A KR 20157008678A KR 102163532 B1 KR102163532 B1 KR 102163532B1
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layer
bonding
semiconductor device
circuit layer
circuit
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KR20150063065A (ko
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슈지 니시모토
요시유키 나가토모
도시유키 나가세
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미쓰비시 마테리알 가부시키가이샤
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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Die Bonding (AREA)
KR1020157008678A 2012-10-09 2013-10-07 반도체 장치, 세라믹스 회로 기판 및 반도체 장치의 제조 방법 Expired - Fee Related KR102163532B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2012-224257 2012-10-09
JP2012224257A JP5664625B2 (ja) 2012-10-09 2012-10-09 半導体装置、セラミックス回路基板及び半導体装置の製造方法
PCT/JP2013/077217 WO2014057902A1 (ja) 2012-10-09 2013-10-07 半導体装置、セラミックス回路基板及び半導体装置の製造方法

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KR20150063065A KR20150063065A (ko) 2015-06-08
KR102163532B1 true KR102163532B1 (ko) 2020-10-08

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US (1) US9401340B2 (enExample)
EP (1) EP2908333A4 (enExample)
JP (1) JP5664625B2 (enExample)
KR (1) KR102163532B1 (enExample)
CN (1) CN104704618B (enExample)
IN (1) IN2015DN02878A (enExample)
TW (1) TWI609462B (enExample)
WO (1) WO2014057902A1 (enExample)

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TW201543720A (zh) * 2014-05-06 2015-11-16 新世紀光電股份有限公司 封裝結構及其製備方法
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