TWI609462B - 半導體裝置，陶瓷電路基板及半導體裝置的製造方法 - Google Patents

半導體裝置，陶瓷電路基板及半導體裝置的製造方法 Download PDF

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TWI609462B
TWI609462B TW102136018A TW102136018A TWI609462B TW I609462 B TWI609462 B TW I609462B TW 102136018 A TW102136018 A TW 102136018A TW 102136018 A TW102136018 A TW 102136018A TW I609462 B TWI609462 B TW I609462B
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layer
circuit layer
underlayer
bonding
circuit
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TW102136018A
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Chinese (zh)
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TW201421618A (zh
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西元修司
長友義幸
長瀬敏之
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三菱綜合材料股份有限公司
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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Die Bonding (AREA)
TW102136018A 2012-10-09 2013-10-04 半導體裝置，陶瓷電路基板及半導體裝置的製造方法 TWI609462B (zh)

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Application Number Priority Date Filing Date Title
JP2012224257A JP5664625B2 (ja) 2012-10-09 2012-10-09 半導体装置、セラミックス回路基板及び半導体装置の製造方法

Publications (2)

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TW201421618A TW201421618A (zh) 2014-06-01
TWI609462B true TWI609462B (zh) 2017-12-21

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US (1) US9401340B2 (enExample)
EP (1) EP2908333A4 (enExample)
JP (1) JP5664625B2 (enExample)
KR (1) KR102163532B1 (enExample)
CN (1) CN104704618B (enExample)
IN (1) IN2015DN02878A (enExample)
TW (1) TWI609462B (enExample)
WO (1) WO2014057902A1 (enExample)

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AT513747B1 (de) 2013-02-28 2014-07-15 Mikroelektronik Ges Mit Beschränkter Haftung Ab Bestückungsverfahren für Schaltungsträger und Schaltungsträger
TW201543720A (zh) * 2014-05-06 2015-11-16 新世紀光電股份有限公司 封裝結構及其製備方法
JP6565527B2 (ja) * 2014-09-30 2019-08-28 三菱マテリアル株式会社 Ａｇ下地層付パワーモジュール用基板及びパワーモジュール
CN107004643B (zh) * 2014-12-16 2019-07-30 京瓷株式会社 电路基板及电子装置
JP6481409B2 (ja) * 2015-02-19 2019-03-13 三菱マテリアル株式会社 パワーモジュール用基板及びパワーモジュール
JP6613929B2 (ja) * 2016-02-01 2019-12-04 三菱マテリアル株式会社 Ａｇ下地層付き金属部材、Ａｇ下地層付き絶縁回路基板、半導体装置、ヒートシンク付き絶縁回路基板、及び、Ａｇ下地層付き金属部材の製造方法
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