TWI689016B - 金屬燒結接合體、及晶片接合方法 - Google Patents

金屬燒結接合體、及晶片接合方法 Download PDF

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TWI689016B
TWI689016B TW106127945A TW106127945A TWI689016B TW I689016 B TWI689016 B TW I689016B TW 106127945 A TW106127945 A TW 106127945A TW 106127945 A TW106127945 A TW 106127945A TW I689016 B TWI689016 B TW I689016B
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wafer
paste
region
porosity
metal sintered
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TW106127945A
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TW201812931A (zh
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竹政哲
上島稔
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日商千住金屬工業股份有限公司
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    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
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    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
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    • B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
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  • Chemical & Material Sciences (AREA)
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  • Die Bonding (AREA)
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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

本發明係提供熱循環耐性及散熱性優異的金屬燒結接合體。本發明之金屬燒結接合體係將基板與晶片(die)進行接合，金屬燒結接合體在與晶片接觸之矩形狀區域的至少中央部及角部係具有比矩形狀區域之平均氣孔率更低的低氣孔率區域，低氣孔率區域係位於以矩形狀區域的對角線作為中心線的帶狀區域內。

Description

金屬燒結接合體、及晶片接合方法
[0001] 本發明係關於使用於晶片黏合之金屬燒結接合體、及晶片接合方法。
[0002] 於在車載等所使用的電源裝置中，使用有相較於Si能帶間隙更廣的SiC或GaN等之半導體。此等係藉由在高溫下之使用，而發揮高電力轉換效率、低損失等之優異的性質。因此，對電源裝置之連接部亦要求有耐熱性之提昇。 　　[0003] 一般而言，金屬間之接合係藉由焊料而進行。於以往所使用之焊料合金中係電傳導率或熱傳導率低且為低熔點，而難以承受電源裝置的驅動溫度。因此，於作為電源裝置所代表之高性能的SiC/GaN之接合中，必須有新的晶片接合材料。 　　[0004] 近年來，使用有電傳導率或熱傳導率為高且高熔點下具有安定性之Ag糊料的晶片黏合係備受矚目。但，由於Ag之熔點為高，因此若想要整體接合，則基板會受到熱損傷。因此，為了謀求接合溫度之低減，而採用使用有奈米粒子之低溫燒結技術。 　　[0005] 但，若使用粒徑小的奈米粒子，則雖燒結溫度降低，但由於將晶片與基板進行接合的金屬燒結接合體會成為多孔質，因此燒結密度會降低，其結果，熱循環耐性或散熱性會降低。為了得到高熱循環耐性或散熱性，必須提昇燒結密度。為了形成具有高燒結密度的金屬燒結接合體，即使使用奈米粒子也必須以250℃以上的加熱溫度一邊施加5～10MPa之高加壓力一邊進行燒結。於如此之高溫及高加壓力下，IC或基板會劣化，因此，進行了以更低溫、低加壓力達成高燒結密度的探討。 　　[0006] 例如，於專利文獻1中係揭示有一種導電性糊料，其係包含混合了具有平均粒徑為0.3μm～0.5μm之平均粒徑的Ag奈米粒子與具有2.0～3.2μm之平均粒徑的Ag粒子之混合Ag粒子，及低級醇，且不含有接著劑。於專利文獻1記載的發明中，雖為了減低電阻而不含有接著劑，但由於使用有混合粒子，因此可減低氣孔率。氣孔率低的組織係利用在小粒子與大粒子之間容易發生晶界擴散的情況所形成。 　　[0007] 另一方面，進行不使用混合粒子，而使用奈米粒子於燒結時不進行加壓的探討。於專利文獻2中係揭示有一種技術，其係為了抑制在燒結時於被接合構件與糊料之間產生的缺口，而將糊料以比被接合構件更廣的面積塗佈於基板，以使糊料在被接合構件上壓入量成為糊料之塗佈時之厚度的30%以上的方式，將糊料在室溫進行加壓之後，在無加壓下進行燒結。 [先前技術文獻] [專利文獻] 　　[0008] 　　[專利文獻1]日本專利第5207281號公報 　　[專利文獻2]日本特開2014-110282號公報
[發明所欲解決之課題] 　　[0009] 但，於專利文獻1中關於燒結時之加壓力完全未提及。僅藉由使用有混合Ag糊料，對於氣孔率之低減係有所限制。又，於專利文獻1記載的發明，由於其目的在於為了減低電阻而於糊料中不含有接著劑，因此用以提昇熱循環耐性或散熱性之各種特性的探討難以說是充分。 　　[0010] 於專利文獻2記載的發明係如前述般，由於在室溫進行加壓，之後在無加壓下進行燒結，因此缺口之發生被抑制。但，於專利文獻2中，關於加壓時之加壓方法，只有在燒結前之被接合構件的壓入量被規定。在燒結前雖在室溫下進行加壓，但其後是在無加壓下進行燒結，因此，無法充分減低氣孔率，而無法充分提昇熱循環耐性及散熱性。 　　[0011] 又，於兩文獻記載的發明中，可推測假設若以IC或基板不劣化的程度一邊加壓一邊燒結，則氣孔率會有些減低。但，隨著電源裝置之小型化及動作溫度之上昇發展，以氣孔率有些減低的程度對應於高熱循環耐性及散熱性的要求係有困難。 　　[0012] 因此，本發明之課題為，提供熱循環耐性及散熱性優異的金屬燒結接合體、及晶片接合方法。
[用以解決課題之手段] 　　[0013] 本發明者們為了謀求兼具熱循環耐性及散熱性而進行了努力探討。關於熱循環耐性，由於是伴隨著循環數之增加，裂縫的延伸係從晶片的角部發生，因此，著眼於使晶片角部的熱循環耐性提昇之點上。又，關於散熱性，通常因IC被設置於晶片的中央部而使該部分成為最高溫，因此，著眼於使晶片的中央部更有效率地散熱之點上。 　　[0014] 並且，以往，為了將晶片與基板進行接合，而對例如專利文獻2之圖所示般具有均勻的組織之金屬燒結接合體加以探討。但，本發明者們為了兼具熱循環特性及散熱性，係想定金屬燒結接合體的組織並非如以往般地為均勻，反倒是設想使金屬燒結接合體成為不均勻的組織，來進一步進行探討。本發明者們想到藉由使對應於金屬燒結接合體之晶片中央部的區域及對應於金屬燒結體之晶片角部的區域之氣孔率減低，而可同時實現熱循環耐性及散熱性之提昇。 　　[0015] 如此之金屬燒結接合體僅如以往般地藉由於燒結前或燒結中施加壓力係無法得到。例如，於專利文獻2之第5圖及第6圖中顯示藉由超音波顯微鏡觀察燒結體的照片。雖假設若於氣孔率具有偏差則應該會顯現於此等之照片，但無法觀察氣孔率之偏差。因而，僅對塗佈於基板的糊料進行加壓並無法得到所期望的氣孔率之分布。
本發明者們進一步進行探討的結果，著眼於在糊料之加壓時的糊料之舉動。通常糊料是由粉末與溶劑構成，因此，可推測藉由加壓，粉末與溶劑會同時流動。但，依據加壓條件，溶劑會從粒子分離，而僅有溶劑被壓出至外部。因此，本發明者們詳細地調查粉末與溶劑會同時流動的條件。
其結果，若將糊料以與晶片大致相同的面積及大致相同形狀之矩形狀進行塗佈並加壓，則從4邊的附近糊料會流出而在其周邊氣孔率變高，在角部及中央部則氣孔率相對性變低，因此，以矩形狀區域的對角線為中心線之帶狀區域的氣孔率會變低。伴隨此，亦可得到以矩形狀區域的對角線作為中心線之帶狀區域的氣孔率變低之見解。本發明者們基於此等見解進一步探討加壓時之各種條件的結果，得到以下見解：在壓入量與加壓速度為特定之條件的情況，如上述般地得到具有所期望的氣孔率之分布的金屬燒結接合體。
又，亦得到以下見解：即使如專利文獻2記載之發明般地，以比晶片更廣的範圍塗佈糊料，其後將晶片壓入糊料，亦顯示上述氣孔率。
如上述般顯示氣孔率之分布的現象係在糊料具有某程度之流動性的狀態下展現。因此，如以往常進行 般地，在燒結前進行使有機溶劑揮發之步驟的情況下並不會展現。又，亦得到下述見解：在塗佈糊料之後，對想要使氣孔率低的部分另行塗佈糊料而於金屬燒結接合體形成密度梯度，藉此以與晶片接觸之矩形狀區域的對角線為中心線的帶狀區域，且至少矩形狀區域之中央部及角部的氣孔率亦會變低。
藉由此等之見解所得之本發明係如下述般。
(1)一種金屬燒結接合體，其係將基板與晶片進行接合之金屬燒結接合體，其特徵為，金屬燒結接合體在與晶片接觸之矩形狀區域的至少中央部及角部係具有比矩形狀區域之平均氣孔率更低的低氣孔率區域，低氣孔率區域係位於以矩形狀區域的對角線作為中心線的帶狀區域內。
(2)如上述(1)之金屬燒結接合體，其中，帶狀區域之寬度係晶片之一邊長度的3~30%。
(3)如上述(1)或上述(2)之金屬燒結接合體，其中，低氣孔率區域主要是佔有中央部。
(4)如上述(1)或上述(2)之金屬燒結接合體，其中，低氣孔率區域主要是佔有角部。
(5)如上述(1)或上述(2)之金屬燒結接合體，其中，低氣孔率區域均勻地存在於帶狀區域中。
(6)如上述(1)~上述(5)中任一項之金屬燒結接合體，其中，低氣孔率區域相對於矩形狀區域的面積之面積率為15%以上。
(7)如上述(1)~上述(6)中任一項之金屬燒結接 合體，其中，低氣孔率區域相對於帶狀區域的面積之面積率為60%以上。
(8)如上述(1)~上述(7)中任一項之金屬燒結接合體，其中，相對於矩形狀區域之平均氣孔率，低氣孔率區域之氣孔率為70%以下。
(9)一種晶片接合方法，其特徵為，於經由如上述(1)~上述(8)中任一項之金屬燒結接合體來將晶片接合於基板的晶片接合方法中，具備下列步驟：塗佈步驟，係於基板之塗佈面且與晶片接觸之矩形狀區域，以糊料之塗佈面積成為晶片之面積的±0.4%的方式，來將糊料塗佈成矩形狀；載置步驟，係將晶片載置於塗佈後之糊料上；加壓步驟，係將塗佈後之糊料，以加壓速度為1μm/s以上，且將晶片壓入糊料的壓入量相對於糊料之塗佈厚而成為10~60%的方式，來以晶片進行加壓；燒結步驟，係將加壓步驟後的糊料以3MPa以下的加壓力，及180~350℃的加熱溫度進行燒結。
(10)如上述(9)之晶片接合方法，其中，於塗佈步驟後且載置步驟之前，具備於矩形狀區域的中央部及角部進一步塗上上塗層糊料的上塗層塗佈步驟。
[0031]以下詳細敘述用以實施本發明之形態作為本 發明之例示。
1.金屬燒結接合體 (1)基板及晶片
本發明之金屬燒結接合體(以下，適當稱為「接合體」)係將基板與晶片進行接合。於本發明中，「晶片」係例如Si等之通常所使用的材質。電子零件。作為「基板」係只要可於其表面塗佈後述之糊料則無特別限定。可列舉例如：氧化鋁、氮化鋁、氧化鋯、氮化鋯、氧化鈦、氮化鈦或包含此等之混合物的陶瓷基板、包含Cu、Fe、Ni、Cr、Al、Ag、Au、Ti的金屬基板、玻璃環氧基板、BT樹脂基板、玻璃基板、樹脂基板、紙等。
又，於此等之基板上，亦可為了提昇與糊料之親和性，而施行Ag或Cu、Ni、Au鍍敷。鍍敷的膜厚較佳為50nm~50μm。
(2)金屬燒結接合體與晶片接觸之矩形狀區域
本發明之金屬燒結接合體係如後述般地，於與晶片接觸之矩形狀區域內具有特徵。其原因在於，晶片之形狀通常為矩形狀，在金屬燒結接合體與晶片接觸之區域必須顯示熱循環耐性及散熱性。於本發明中，亦可為如角部被倒角的情況，或角度從90°有些偏離。又，於本發明中，「矩形」係在平面觀察下包含長方形及正方形。
(3)矩形狀區域之至少中央部及角部具有比矩形狀區域之 平均氣孔率更低的低氣孔率區域。
就提昇熱循環耐性及散熱性的觀點而言，本發明之金屬燒結接合體係具有在與晶片接觸之矩形狀區域中至少中央部及角部之氣孔率比接合體之矩形狀區域之平均氣孔率更低的低氣孔率區域。於熱循環耐性之測定中，主要是起因於施加於晶片之角部的應力而裂縫會延伸至接合體。因此，藉由減低與晶片之角部接觸的區域之氣孔率，而提昇裂縫最容易延伸的部分之接合強度，而提昇熱循環耐性。
又，關於散熱性，由於被設置於晶片的電源裝置幾乎配線都集中於晶片的中央部，因此於驅動時中央部成為最高溫。並且，晶片的熱係經由接合體而以放射狀傳遞至基板的面方向。因此，於接合體中，使對應於晶片之中央部的接合體中央部之散熱性提昇係用以提昇散熱性之有效手段。
因此，相對於以往使接合體之氣孔率成為均勻的方式，於本發明之金屬燒結接合體中，反倒是藉由在與晶片接觸之矩形狀區域，且矩形狀區域之至少中央部與角部設有低氣孔率區域，而可實現以往所無法完成之高熱循環耐性與散熱性之兩立。
於本發明中，「中央部」係表示於金屬燒結接合體在與晶片接觸之矩形狀區域中，以對角線交叉之點為中心，從該中心點起之距離為晶片之一邊的長度的30%以內之區域。又，相同地，「角部」係表示於金屬燒結接 合體在與晶片接觸之矩形狀區域中，從該頂點起之距離為晶片之一邊的長度的30%以內之區域。另外，本發明之低氣孔率區域係只要位於後述之帶狀區域內即可，因此，無須將上述「中央部」及「角部」之全體設為低氣孔率區域，只要各者之至少一部分為低氣孔率區域即可。
於本發明中，低氣孔率區域之氣孔率，可藉由利用SEM或光學顯微鏡，拍攝金屬燒結接合體之1200倍的剖面照片，並鑑定金屬部分與氣孔部分，於縱橫等間隔地各畫10條直線，合計畫20條，計算將各線與氣孔重疊部分之長度的合計除以各線之長度所得之比例而求出。另外，低氣孔率區域係SEM或光學顯微鏡之任一者皆可以深色來作視覺性區分。
又，於本發明中，接合體之矩形狀區域的平均氣孔率係可如以下方式求出。首先，拍攝接合體之35倍以上的X射線平面照片，以使接合體之一邊的長度成為200mm的方式進行印刷。於印刷的影像上進行劃分，而形成一邊為2mm之正方形的方格。接著，將低氣孔率區域與其以外之區域(以下，有時適當稱為「高氣孔率區域」)沿著方格的格子來切開。在1個格子包含低氣孔率區域與高氣孔率區域的情況時，將方格的格子分成2等份。
由如此方式所得之面積，算出作為低氣孔率區域之面積相對於矩形狀區域之面積的比例之低氣孔率區域之面積率，及作為高氣孔率區域之面積相對於矩形狀區域之面積的比率之高氣孔率區域之面積率。其後，可藉由 將低氣孔率區域之面積率與低氣孔率區域之氣孔率相乘，及將高氣孔率區域之面積率與高氣孔率區域之氣孔率相乘，算出各者之合計而求出矩形狀區域之平均氣孔率。另外，於高氣孔率區域之氣孔率中，係可於高氣孔率區域中，以與低氣孔率區域之氣孔率相同的手法求出。
(4)低氣孔率區域之氣孔率：20%以下
於本發明中，低氣孔率區域之氣孔率越低，熱循環耐性及散熱性越提昇，因此，氣孔率越低越好。低氣孔率區域之氣孔率的上限較佳為20%以下，更佳為15%以下，特佳為12%以下。另一方面，使低氣孔率區域之氣孔率成為0%一事現實上係有困難。低氣孔率區域之氣孔率的下限較佳為1%以上，更佳為3%以上。
又，就相同的觀點而言，相對於金屬燒結接合體之矩形狀區域之平均氣孔率，低氣孔率區域之氣孔率較佳為70%以下，更佳為60%以下，特佳為55%以下。
(5)低氣孔率區域係位於以矩形狀區域的對角線作為中心線之帶狀區域內。
金屬燒結接合體係僅藉由具有低氣孔率區域並無法發揮本發明之效果。熱循環耐性係若低氣孔率區域偏向一方，則不會提昇，即使於矩形狀區域之全體均勻地分散存在亦不會提昇。為了有效率地提昇熱循環耐性，低氣孔率區域必須位於金屬燒結接合體之對稱的區域。藉此，一對的低氣孔率區域各別存在於至少2個對稱的角，因此可顯示高熱循環耐性。因此，於本發明中，低氣孔率區域，其要件為位於以接合體的對角線作為中心線之帶狀區域內。 　　[0045] 另外，於本發明中，由於若帶狀區域之寬過廣，則角部的區域會變廣，因此在低氣孔率區域之面積為狹窄的情況時，無法將低氣孔率區域配置於對稱的位置，而有無法得到所期望之熱循環耐性的情況。又，由於若帶狀區域之寬過廣，則中心部的區域會變廣，因此有無法將低氣孔率區域配置於如散熱性提昇般之位置的情況。再者，若帶狀區域過廣而低氣孔率區域佔有帶狀區域之全區域，則金屬燒結接合體全體之強度會變得過高，而無法緩和應力，而成為晶片破損的原因。因此，帶狀區域之寬較理想為晶片之一邊長度的3～30%。於晶片為長方形的情況時，「一邊的長度」係表示短邊的長度。 　　[0046] 又，於本發明中，就使熱循環耐性及散熱性提昇的觀點而言，低氣孔率區域相對於矩形狀區域之面積的面積率，較佳為10%以上，更佳為15%以上，特佳為20%以上。又，就相同的觀點而言，低氣孔率區域相對於帶狀區域之面積的面積率，較佳為60%以上，更佳為70%以上，特佳為80%以上。低氣孔率區域之面積率係可如前述般地在算出平均氣孔率時求出。 　　[0047] 再者，依據電源裝置之性能，係有想要使散熱性或熱循環耐性之任一者優先提昇的情況。因此，在想提昇散熱性的情況時，較理想係低氣孔率區域主要是位於佔有中央部。另一方面，在想提昇熱循環耐性的情況時，較理想係主要是位於佔有角部。在此，於本發明中，「主要」係表示全低氣孔率區域的60%以上的面積率。在沒有必要使任一特性優先提昇的情況時，只要低氣孔率區域均勻地存在於帶狀區域即可。 　　[0048] (6)金屬粒子 　　本發明之金屬燒結接合體係可為以金屬奈米粒子所構成，亦可為微粒子與奈米粒子之混合粒子，又，亦可使用片狀微粒子與奈米粒子之混合粒子之任一者。就確保糊料之流動性的觀點而言，金屬粒子之粒徑較理想係接合體之厚度的1/6以下。 　　[0049] 又，作為金屬粒子之構成元素，較理想係由展現熔點為至少在電源裝置之驅動溫度下不會熔融的溫度之元素所構成，可列舉例如：Ag、Cu、Pd、Au、Pt、Ti、Ni、Al、Zn等。此等之中，就泛用性的觀點而言，較佳為Ag、Cu，較佳為此等之混合粉末，特佳為Ag。 　　[0050] (7)金屬燒結接合體之厚度 　　金屬燒結接合體之厚度係為了確保接合強度，又，擔保塗佈時之均勻性，較理想為20～200μm。另外，即使是晶片與基板為傾斜的情況亦充分考量，因此，本發明之接合體的厚度係設為在接合體之中心的厚度。 　　[0051] 2.晶片製造方法 　　本發明之金屬燒結接合體係可例如以下方式來製造。使用第1圖來說明製造方法之一例。第1圖係進行使用有本發明之金屬燒結接合體之晶片黏合的步驟之概略步驟圖，第1圖(A)係將晶片以黏晶機載置於Ag糊料上的步驟，第1圖(B)係以晶片將Ag糊料進行加壓的步驟，第1圖(C)係於晶片上放置砝碼一邊施加接合壓力一邊在加熱板上將Ag糊料進行燒結的步驟。 　　[0052] (1)準備糊料的步驟 　　首先，準備金屬微粒子、或是金屬奈米粒子，或者金屬奈米粒子與金屬微粒子之混合粒子。接著，製造用以形成本發明之金屬燒結接合體的糊料。此糊料係將上述金屬粒子或混合粒子與醇進行攪拌、混合而製造。 　　[0053] 醇，較佳係低級醇，或是具有由低級烷氧基、胺基、鹵素所成之群中選出的1種以上之取代基的低級醇。前述低級醇係可列舉例如：包含具有碳原子1～6個之烷基、與羥基1～3個，較佳為1～2個者。作為前述低級烷基係可列舉例如：甲基、乙基、n-丙基、i-丙基、n-丁基、i-丁基、sec-丁基、t-丁基、n-戊基、i-戊基、sec-戊基、t-戊基、2-甲基丁基、n-己基、1-甲基戊基、2-甲基戊基、3-甲基戊基、4-甲基戊基、1-乙基丁基、2-乙基丁基、1,1-二甲基丁基、2,2-二甲基丁基、3,3-二甲基丁基、及1-乙基-1-甲基丙基等之直鏈狀或分支狀之烷基。作為具有碳原子1～6個之烷基與具有羥基1～3個的低級醇係可列舉例如：甲醇、乙醇、乙二醇、n-丙醇、i-丙醇、三乙二醇、n-丁醇、i-丁醇、sec-丁醇、t-丁醇、n-戊醇、i-戊醇、sec-戊醇、t-戊醇、2-甲基丁醇、n-己醇、1-甲基戊醇、2-甲基戊醇、3-甲基戊醇、4-甲基戊醇、1-乙基丁醇、2-乙基丁醇、1,1-二甲基丁醇、2,2-二甲基丁醇、3,3-二甲基丁醇、及1-乙基-1-甲基丙醇等。 　　[0054] 於具有由低級烷氧基、胺基及鹵素所成之群中選出的1種以上之取代基的前述低級醇中，針對取代基係如以下所述。作為前述低級烷氧基係可列舉於前述低級烷基中-O-被取代的基。作為前述低級烷氧基係可列舉：甲氧基、乙氧基、n-丙氧基、i-丙氧基、n-丁氧基、i-丁氧基、sec-丁氧基、t-丁氧基、n-戊氧基等。作為前述鹵素係可列舉：氟、溴、氯及碘。 　　[0055] 作為具有由低級烷氧基、胺基及鹵素所成之群中選出的1種以上之取代基的前述低級醇係可列舉例如：甲氧基甲醇、2-甲氧基乙醇、2-乙氧基乙醇、2-氯乙醇、乙醇胺等。 　　[0056] 另外，為了製造本發明之金屬燒結接合體，由於是如後述般地以晶片將糊料加壓而使粒子流動，因此較佳係調整糊料之黏性。糊料之黏性只要為0.1～300Pa･s之範圍即可，較佳為100～200Pa･s之範圍。上述醇，為了抑制常溫下之黏性的上昇，較理想係沸點為200℃以上。又，糊料中之粉末的含量只要為75～95質量%即可。
(2)將糊料塗佈於基板上的步驟
於將糊料塗佈於基板上的步驟中，於基板之塗佈面中，將糊料塗佈於與晶片接觸之矩形狀區域。塗佈糊料的面積較理想係與晶片之面積相同程度。若糊料之塗佈面積比晶片之面積大幅地過廣，則從對應於晶片之面流出的糊料在將糊料加壓時會阻礙糊料之流動，而無法形成帶狀區域。另一方面，若糊料之塗佈面積過窄，則即使將糊料加壓，糊料亦不會擴展於晶片全面，而於晶片的角部不形成金屬燒結接合體。因此，糊料之塗佈面積，較佳為晶片之面積的±0.4%以下，更佳為晶片之面積的±0.3%以下，再更佳為晶片之面積的±0.1%，特佳為與晶片之面積大致相同。
塗佈手段係只要可於基板表面塗佈金屬糊料則無特別限定。例如，亦可藉由印刷法、塗覆法等而進行。作為印刷法係可列舉：網版印刷法、平版印刷法、噴墨印刷法、柔版印刷法、凹版印刷法、沖壓、分配(dispense)、刮板印刷、絲網印刷、噴霧、刷毛塗裝等，較佳為網版印刷法、沖壓及分配。
又，於本發明之晶片接合方法中，於所塗佈之糊料中，亦可於前述之帶狀區域中之中央部及角部塗上上塗層糊料。藉此，使糊料具有所期望之密度梯度。於此情況中，雖無須如後述般地以晶片對糊料刻意地加壓，但亦可如下述(3)步驟般地進行加壓。若進行加壓，則糊料 會流動，藉此可避免急遽的密度梯度，因此，可防止燒結時之裂縫等。其後之燒結步驟係如後述般。
所塗佈之金屬糊料的厚度，例如，20~500μm，較佳為50~400μm，更佳為80~300μm。
(3)將晶片載置於塗佈後之糊料上的步驟
如第1圖(A)所示般，以黏晶機吸附晶片，並載置於糊料上。於此步驟中，亦可在將晶片載置於糊料上之前，使用控制黏晶機之間隙的設備，而提昇晶片與基板之平坦度。具體而言，晶片相對於基板之傾斜角度較佳為1°以下，更佳為0.8°以下，特佳為0.5°以下。若在晶片傾斜的狀態下對糊料進行加壓，則無法如本發明之金屬燒結接合體般地於矩形狀區域之中央部及角部形成低氣孔率區域。作為理由係可推測如下。若晶片傾斜，則糊料並非等向性而是朝一方向流動，不會產生低氣孔率區域，或是即使產生低氣孔率區域亦僅在接合體之單側產生，而無法位於接合體之對稱的區域。相對於此，若幾乎無基板與晶片之傾斜角度而在平坦度極高的狀態下晶片對糊料進行加壓，則壓力會均勻地施加於糊料，使糊料等向性地流動，而於特定的位置產生低氣孔率區域。
(4)以晶片對糊料進行加壓的加壓步驟
接著，如第1圖(B)所示般，以晶片對Ag糊料進行加壓。
　　[0063] 於本發明中，藉由以上述條件對糊料進行加壓而形成低氣孔率區域。其係如以下般地推察。若將晶片進行加壓，則糊料會以某程度擴展，而從晶片的4邊部流出糊料。是故，藉由流出，在4邊的附近區域之粉末密度會降低，於燒結後，於4邊的附近區域中，氣孔率會變高。另一方面，於角部，即使糊料被晶片按壓，糊料亦幾乎不會流出，因此，無觀察到粉末密度之降低。是故，以對角線作為中心線之帶狀區域的氣孔率不會增加，而於帶狀區域形成低氣孔率區域。 　　[0064] 於本發明中，必須不論糊料之流動性，以使金屬燒結接合體成為特定的厚度之方式，以糊料之塗佈厚的10～60%之範圍壓入。若為此範圍內，則糊料會等向性地流動而可得到所期望的密度梯度。若壓入量未達10%，則糊料不會充分地流動而無法得到所期望的密度梯度。壓入量的下限為10%以上，較佳為20%以上，更佳為25%以上。另一方面，若壓入量超過60%，則糊料的流出量過多，而無法得到所期望之金屬燒結接合體的厚度。又，殘留在晶片下的糊料量變少，密度分布減低，而無法得到所期望之低氣孔率區域。壓入量的上限為60%以下，較佳為50%以下，更佳為40%以下。 　　[0065] 於本發明中，以使糊料與粉末及溶劑一起流動的方式，以1μm/s以上的加壓速度，將晶片壓入糊料。若加壓速度未達1μm/s，則僅糊料中之溶劑成分被壓出至外部，粉末不會流動，而無法得到低氣孔率區域。加壓速度的下限為1μm/s以上，較佳為2μm/s以上。加壓速度的上限雖無特別限定，但只要是可控制裝置的規格、及壓入量的範圍即可，較佳為200μm/s以下。 　　[0066] 加壓時間可為因加壓導致之密度梯度展現的程度之時間，亦可為數秒～1分鐘左右。 　　[0067] 又，由於其係燒結前的步驟，因此就確保糊料之流動性的觀點而言，較佳係在室溫下進行。在想要提昇糊料之流動性的情況時，亦可以不揮發的程度進行加溫，例如亦可進行加溫至50℃左右。 　　[0068] (5)一邊施加接合壓力一邊在180～350℃之溫度範圍內將糊料進行燒結的步驟 　　如第1圖(C)所示般，於晶片放置砝碼一邊施加接合壓力一邊在加熱板上將Ag糊料進行燒結。載放於晶片的砝碼之質量係以使接合壓力成為3MPa以下的方式適當選擇。若接合壓力超過3MPa，則恐有IC或基板破損之虞。又，在晶片下被燒結的接合體之板厚會變薄，密度分布減低，而無法得到所期望之低氣孔率區域。較佳為，加熱溫度係進行加熱至180～350℃之溫度區域，加熱時間係5～300分鐘。 　　[0069] 另外，由於即使在燒結時晶片與基板多少傾斜，於糊料發生的密度梯度也不會消失，因此放置砝碼的位置並無特別限定，但較理想係設為晶片之中央部，以使晶片與基板之傾斜角度維持前述範圍內。亦可取代將砝碼載置於晶片，而是使用彈簧或壓缸等來施加接合壓力。 　　[0070] 加熱後，進行空冷而晶片黏合結束。 [實施例] 　　[0071] 實施例1 (糊料之作製) 　　於本實施例中，使用厚度為260nm之平均粒徑8.0μm的Ag微片粒子50g、與平均粒徑0.3μm之亞微粒子之混合粒子50g，而得到Ag粒子。另外，平均粒徑係藉由雷射方法(大塚電子股份有限公司製，動態光散射光度計DLS-8000)而求出。將此粒子與乙二醇，使用KEYENCE公司製之KEYENCEHM-500混合攪拌機來進行混合，而製作黏性為150Pa･s之混合Ag糊料。此糊料係Ag粒子為糊料的90質量%。 　　[0072] (糊料之塗佈、晶片之載置、以晶片之糊料的加壓) 　　將此糊料，於表面施行了Ni-Ag鍍敷(膜厚：40μm)的20mm×20mm×1mm之銅基板上，使用金屬遮罩，以4mm×4mm×0.1mm之尺寸進行塗佈。其後，使用黏晶機，將4mm×4mm×0.4mm之Si晶片載置於塗佈於Cu基板的糊料上。接著，以0.2MPa之荷重壓，以Si晶片進行10秒鐘，在室溫下進行加壓。加壓後之糊料的厚度為0.07mm(塗佈時的70%)。又，加壓速度係設為下述表1所示之速度。此時，使用控制黏晶機之間隙的設備，以使基板與晶片的傾斜角度成為1°的方式進行調整。 　　[0073] (糊料之加熱) 　　於晶片之上放置砝碼，一邊施加0.2MPa之荷重壓一邊在加熱板上以180℃進行加熱5分鐘，以10℃/min之昇溫速度進行昇溫直至250℃為止，保持30分鐘。其後，在室溫下進行空冷而晶片黏合結束。 　　[0074] (燒結體之觀察) 　　對於糊料與基板或是晶片的接合狀態，使用日立製作所製FS300III，藉由SAT(high speed Scanning Acoustic Tomograph)進行觀察。此影像係將超音波探針之掃描節距設為0.01mm者。又，使用股份有限公司東研公司製TUX-3200來進行X射線觀察，由所拍攝的X射線照片針對密度分布之有無以目視進行觀察。 　　[0075] 接合體之剖面微細構造係使用日本電子股份有限公司製JSM-6610LV藉由SEM進行觀察。 　　[0076] (密度之狀態、氣孔率、面積率) 　　密度之狀態係由接合體之X射線平面照片以目視進行觀察。於帶狀區域可確認深色的情況係作為「〇」，無法確認深色的情況係作為「×」。 　　[0077] 低氣孔率區域之氣孔率係拍攝金屬燒結接合體之1200倍的剖面SEM照片，並鑑定金屬部分與氣孔部分，於縱橫等間隔地各畫10條直線，合計畫20條，計算將各線與氣孔重疊部分之長度的合計除以各線之長度所得之比例。 　　[0078] 接合體全體之平均氣孔率係拍攝接合體之35倍的X射線平面照片，以使接合體之一邊的長度成為200mm的方式進行印刷。於印刷的影像上進行劃分，而形成一邊為2mm之正方形的方格。於Ｘ射線平面照片中，顏色深的部分為低氣孔率區域，顏色淡的部分為高氣孔率區域。接著，將低氣孔率區域與高氣孔率區域沿著方格的格子來切開。在1個格子包含低氣孔率區域與高氣孔率區域的情況時，將方格紙的格子分成2等份。 　　[0079] 由如此方式所得之面積，算出作為低氣孔率區域之面積相對於矩形狀區域之面積的比例之低氣孔率區域之面積率，及作為高氣孔率區域之面積相對於矩形狀區域之面積的比率之高氣孔率區域之面積率。其後，藉由將低氣孔率區域之面積率與以前述方式求出的低氣孔率區域之氣孔率相乘，將高氣孔率區域之面積率與以前述方式求出的高氣孔率區域之氣孔率相乘，算出各者之合計而求出。另外，低氣孔率區域係將位於以金屬燒結接合體的對角線作為中心線，且寬為晶片之一邊的長度的20%之帶狀區域內者為對象。 　　[0080] (TCT裂縫延伸率) 　　熱循環耐性為以將-40℃：20分鐘、200℃：40分鐘作為1個循環的條件，於500循環試驗後，觀察晶片之對角線剖面，測定對角線上之裂縫延伸長度，算出在以對角線全體為100%時之裂縫延伸長度的佔有率，而作為裂縫延伸率。 　　[0081] ・實施例2、5～10、比較例1～4 　　此等之實施例係於實施例1中，分別變更成表1所記載的條件來進行晶片黏合者。 　　[0082] ・實施例3及4 　　於實施例1中，在將糊料塗佈於基板之後，於中央部(中心)及角部(4角)個別再塗佈0.5mg之相同的糊料之後，與實施例1相同地進行晶片黏合。另外，於實施例3中係於角部另行塗佈糊料，於實施例4中係於中央部另行塗佈糊料。 　　[0083] ・比較例5 　　於實施例1中，使用金屬遮罩以5mm×5mm×0.1mm的尺寸進行塗佈，使用黏晶機將4mm×4mm×0.4mm之Si晶片載置於塗佈於Cu基板的糊料上，除此之外，與實施例1相同地進行晶片黏合。 　　[0084] 另外，於表1中，「-」係表示由於未觀察到密度梯度而成為均勻的氣孔率，因此不進行測定。 　　[0085]
Figure 02_image001
[0086] 由表1所得以明瞭般，實施例之接合體係具有特定的密度梯度，至少於接合體之中央部及角部存在低氣孔率區域，且該氣孔率顯示比平均氣孔率更低之值。其結果，顯示出優異的熱循環耐性。又，由於存在如此般之低氣孔率區域，因此散熱性亦優異。於實施例3中，全低氣孔率區域的60%以上存在於角部。於實施例4中，全低氣孔率區域的60%以上存在於中央部。 　　[0087] 另一方面，於比較例1及2中，由於晶片搭載速度緩慢，糊料非等向性地流動，因此完全無觀察到梯度密度，在接合體的任何場所氣孔率皆為相同程度，而燒結密度無論場所皆為均勻。因此，比較例1及2之氣孔率係無論場所皆顯示出金屬燒結接合體全體之平均氣孔率。 　　[0088] 比較例3係由於加熱時之加壓力過高，因此無顯示密度梯度，而無法形成低氣孔率區域。 　　[0089] 比較例4係由於未以晶片壓入糊料因此糊料不流動，無顯示密度梯度，而無法形成低氣孔率區域。 　　[0090] 比較例5係糊料之塗佈面積廣，從加壓前於晶片的周圍存在糊料，因此位於晶片下的糊料從晶片流出，因此，無顯示密度梯度，而無法形成低氣孔率區域。 　　[0091] 以下，使用照片更詳細地敘述。 　　第2圖係實施例1之接合體之平面照片及剖面照片，第2圖(a)係X射線平面照片(35倍)，第2圖(b)係SAT平面照片，第2圖(c)係第2圖(a)之X-Y剖面之SEM照片(30倍)，第2圖(d)係第2圖(c)中之左側的虛線所包圍的部分之接合界面放大剖面照片(1200倍)，第2圖(e)係第2圖(c)中之右側的虛線所包圍的部分之接合界面放大剖面照片(1200倍)。 　　[0092] 由第2圖(a)及第2圖(b)所明瞭般，得知於實施例1中，於以對角線作為中心線之帶狀區域存在有低氣孔率區域。於實施例1中，低氣孔率區域相對於金屬燒結接合體的面積之面積率為30%，低氣孔率區域相對於帶狀區域的面積之面積率為85%。由第2圖(c)所明瞭般，得知於接合界面未發生空隙。由第2圖(e)所明瞭般，得知於第2圖(a)之X-Y剖面中，於第2圖(e)所示之低氣孔率區域中顯示氣孔較少的低氣孔率，因此，具有高燒結密度。又，得知於第2圖(d)所示之區域中，氣孔為多，而比低氣孔率區域氣孔率更高。 　　[0093] 接著，顯示調查晶片搭載速度及晶片壓入量的結果。第3圖係金屬燒結接合體之X射線平面照片，第3圖(a)係實施例1，第3圖(b)係實施例5，第3圖(c)係實施例6，第3圖(d)係實施例7，第3圖(e)係實施例8，第3圖(f)係實施例9，第3圖(g)係比較例1，第3圖(h)係比較例2，第3圖(i)係比較例4之X射線平面照片。 　　[0094] 由第3圖(a)～第3圖(f)所明瞭般，得知於實施例中，於以對角線作為中心線之帶狀區域為深色，以深色表示的區域為低氣孔率區域。另一方面，由第3圖(g)～第3圖(i)所明瞭般，比較例1及比較例2係由於晶片搭載速度緩慢，因此糊料不充分流動，而無觀察到低氣孔率區域。又，比較例4係由於未將晶片壓入糊料，因此糊料不流動，而無觀察到低氣孔率區域。 　　[0095] 於第3圖中，由於確認深色的部分為低氣孔率區域，因此藉由剖面觀察而確認到氣孔之分布。第4圖係金屬燒結接合體之接合界面附近之放大剖面圖，第4圖(a)係實施例1之放大剖面SEM照片，第4圖(b)係比較例1之放大剖面SEM圖。另外，於第4圖中，與第2圖(a)相同地，以通過中心部的方式切斷成2個，觀察該破斷面。由第4圖(a)所明瞭般，於實施例1之金屬燒結接合體的中心部不太能觀察到氣孔，於中心部以外的區域係觀察到多數個氣孔。另一方面，如第4圖(b)所明瞭般，得知於比較例1之金屬燒結接合體係氣孔全體均勻地分散。 　　[0096] 第5圖係熱循環試驗後之接合界面之剖面SEM照片，第5圖(a)係實施例1之剖面SEM照片，第5圖(b)係比較例1之剖面SEM照片。如第5圖(a)所示般，於實施例1中，在熱循環試驗後也完全無觀察到裂縫。另一方面，如第5圖(b)所示般，得知於比較例1中，在熱循環試驗後發生了裂縫。因此，得知裂縫延伸率係比較例1較大。
[第1圖]第1圖係進行使用有本發明之金屬燒結接合體之晶片黏合的步驟之概略步驟圖，第1圖(A)係將晶片以 黏晶機載置於Ag糊料上的步驟，第1圖(B)係以晶片將糊料進行加壓的步驟，第1圖(C)係於晶片上放置砝碼一邊施加接合壓力一邊在加熱板上將Ag糊料進行燒結的步驟。
[第2圖]第2圖係實施例1之金屬燒結接合體之平面照片及剖面照片，第2圖(a)係X射線平面照片(35倍)，第2圖(b)係SAT平面照片，第2圖(c)係第2圖(a)之X-Y剖面之SEM照片(30倍)，第2圖(d)係第2圖(c)中之左側的虛線所包圍的部分之接合界面放大剖面照片(1200倍)，第2圖(e)係第2圖(c)中之右側的虛線所包圍的部分之接合界面放大剖面照片(1200倍)。
[第3圖]第3圖係金屬燒結接合體之X射線平面照片，第3圖(a)係實施例1，第3圖(b)係實施例5，第3圖(c)係實施例6，第3圖(d)係實施例7，第3圖(e)係實施例8，第3圖(f)係實施例9，第3圖(g)係比較例1，第3圖(h)係比較例2，第3圖(i)係比較例4之X射線平面照片。
[第4圖]第4圖係金屬燒結接合體之接合界面附近之放大剖面圖，第4圖(a)係實施例1之放大剖面SEM照片，第4圖(b)係比較例1之放大剖面SEM圖。
[第5圖]第5圖係熱循環試驗後之接合界面之剖面SEM照片，第5圖(a)係實施例1之剖面SEM照片，第5圖(b)係比較例1之剖面SEM照片。

Claims (10)

  1. 一種金屬燒結接合體，其係將基板與晶片(die)接合之金屬燒結接合體，其特徵為，前述金屬燒結接合體在與前述晶片接觸之矩形狀區域的至少中央部及角部係具有比前述矩形狀區域之平均氣孔率更低的低氣孔率區域，前述低氣孔率區域係位於以前述矩形狀區域的對角線作為中心線之帶狀區域內。
  2. 如請求項1之金屬燒結接合體，其中，前述帶狀區域之寬度係前述晶片之一邊長度的3~30%。
  3. 如請求項1或2之金屬燒結接合體，其中，前述低氣孔率區域主要是佔有前述中央部。
  4. 如請求項1或2之金屬燒結接合體，其中，前述低氣孔率區域主要是佔有前述角部。
  5. 如請求項1或2之金屬燒結接合體，其中，前述低氣孔率區域均勻地存在於前述帶狀區域中。
  6. 如請求項1或2之金屬燒結接合體，其中，前述低氣孔率區域相對於前述矩形狀區域的面積之面積率為15%以 上。
  7. 如請求項1或2之金屬燒結接合體，其中，前述低氣孔率區域相對於前述帶狀區域的面積之面積率為60%以上。
  8. 如請求項1或2之金屬燒結接合體，其中，相對於前述矩形狀區域之平均氣孔率，前述低氣孔率區域的氣孔率為70%以下。
  9. 一種晶片接合方法，其係經由藉由在基板上塗佈糊料並進行燒結而得之如請求項1~8中任一項之金屬燒結接合體來將晶片接合於前述基板的晶片接合方法，其特徵為具備下列步驟：塗佈步驟，係於前述基板之塗佈面且與前述晶片接觸之矩形狀區域，以前述糊料之塗佈面積成為前述晶片之面積的±0.4%的方式，來將前述糊料塗佈成矩形狀；載置步驟，係將前述晶片載置於塗佈後之前述糊料上；加壓步驟，係將塗佈後之前述糊料，以加壓速度為1μm/s以上，且將前述晶片壓入前述糊料的壓入量相對於前述糊料之塗佈厚而成為10~60%的方式，來以前述晶片進行加壓；燒結步驟，係將前述加壓步驟後的前述糊料以3MPa以下的加壓力，及180~350℃的加熱溫度進行燒結。
  10. 如請求項9之晶片接合方法，其中，於前述塗佈步驟後且前述載置步驟之前，具備於前述矩形狀區域的中央部及角部進一步塗上上塗層糊料的上塗層塗佈步驟。
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