JP5664625B2 - 半導体装置、セラミックス回路基板及び半導体装置の製造方法 - Google Patents

半導体装置、セラミックス回路基板及び半導体装置の製造方法 Download PDF

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Publication number
JP5664625B2
JP5664625B2 JP2012224257A JP2012224257A JP5664625B2 JP 5664625 B2 JP5664625 B2 JP 5664625B2 JP 2012224257 A JP2012224257 A JP 2012224257A JP 2012224257 A JP2012224257 A JP 2012224257A JP 5664625 B2 JP5664625 B2 JP 5664625B2
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Japan
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layer
semiconductor element
bonding
circuit layer
circuit
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Expired - Fee Related
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JP2012224257A
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Japanese (ja)
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JP2014078558A (ja
JP2014078558A5 (enExample
Inventor
修司 西元
修司 西元
長友　義幸
義幸 長友
長瀬　敏之
敏之 長瀬
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Mitsubishi Materials Corp
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Mitsubishi Materials Corp
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Priority to JP2012224257A priority Critical patent/JP5664625B2/ja
Priority to TW102136018A priority patent/TWI609462B/zh
Priority to PCT/JP2013/077217 priority patent/WO2014057902A1/ja
Priority to EP13846215.5A priority patent/EP2908333A4/en
Priority to KR1020157008678A priority patent/KR102163532B1/ko
Priority to US14/433,764 priority patent/US9401340B2/en
Priority to CN201380052142.6A priority patent/CN104704618B/zh
Priority to IN2878DEN2015 priority patent/IN2015DN02878A/en
Publication of JP2014078558A publication Critical patent/JP2014078558A/ja
Publication of JP2014078558A5 publication Critical patent/JP2014078558A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
    • H10W40/10—
    • H10W40/255—
    • H10W40/47—
    • H10W70/685—
    • H10W72/071—
    • H10W72/30—
    • H10W90/00—
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/04—Ceramic interlayers
    • C04B2237/06—Oxidic interlayers
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/125—Metallic interlayers based on noble metals, e.g. silver
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/126—Metallic interlayers wherein the active component for bonding is not the largest fraction of the interlayer
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/366—Aluminium nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/402—Aluminium
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/59—Aspects relating to the structure of the interlayer
    • C04B2237/597—Aspects relating to the structure of the interlayer whereby the interlayer is continuous but porous, e.g. containing hollow or porous particles, macro- or micropores or cracks
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/708—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the interlayers
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/72—Forming laminates or joined articles comprising at least two interlayers directly next to each other
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8581—Means for heat extraction or cooling characterised by their material
    • H10W72/01323—
    • H10W72/01361—
    • H10W72/073—
    • H10W72/07331—
    • H10W72/07332—
    • H10W72/07553—
    • H10W72/322—
    • H10W72/325—
    • H10W72/352—
    • H10W72/353—
    • H10W72/531—
    • H10W72/884—
    • H10W72/925—
    • H10W72/952—
    • H10W72/953—
    • H10W74/00—
    • H10W90/734—
    • H10W90/736—
    • H10W90/754—
    • H10W90/756—

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Die Bonding (AREA)
  • Manufacturing & Machinery (AREA)
JP2012224257A 2012-10-09 2012-10-09 半導体装置、セラミックス回路基板及び半導体装置の製造方法 Expired - Fee Related JP5664625B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2012224257A JP5664625B2 (ja) 2012-10-09 2012-10-09 半導体装置、セラミックス回路基板及び半導体装置の製造方法
TW102136018A TWI609462B (zh) 2012-10-09 2013-10-04 半導體裝置，陶瓷電路基板及半導體裝置的製造方法
EP13846215.5A EP2908333A4 (en) 2012-10-09 2013-10-07 SEMICONDUCTOR COMPONENT, CERAMIC CONDUCTOR PLATE AND SEMICONDUCTOR COMPONENT MANUFACTURING METHOD
KR1020157008678A KR102163532B1 (ko) 2012-10-09 2013-10-07 반도체 장치, 세라믹스 회로 기판 및 반도체 장치의 제조 방법
PCT/JP2013/077217 WO2014057902A1 (ja) 2012-10-09 2013-10-07 半導体装置、セラミックス回路基板及び半導体装置の製造方法
US14/433,764 US9401340B2 (en) 2012-10-09 2013-10-07 Semiconductor device and ceramic circuit substrate, and producing method of semiconductor device
CN201380052142.6A CN104704618B (zh) 2012-10-09 2013-10-07 半导体装置、陶瓷电路基板及半导体装置的制造方法
IN2878DEN2015 IN2015DN02878A (enExample) 2012-10-09 2013-10-07

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012224257A JP5664625B2 (ja) 2012-10-09 2012-10-09 半導体装置、セラミックス回路基板及び半導体装置の製造方法

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JP2014078558A JP2014078558A (ja) 2014-05-01
JP2014078558A5 JP2014078558A5 (enExample) 2014-06-19
JP5664625B2 true JP5664625B2 (ja) 2015-02-04

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JP2012224257A Expired - Fee Related JP5664625B2 (ja) 2012-10-09 2012-10-09 半導体装置、セラミックス回路基板及び半導体装置の製造方法

Country Status (8)

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US (1) US9401340B2 (enExample)
EP (1) EP2908333A4 (enExample)
JP (1) JP5664625B2 (enExample)
KR (1) KR102163532B1 (enExample)
CN (1) CN104704618B (enExample)
IN (1) IN2015DN02878A (enExample)
TW (1) TWI609462B (enExample)
WO (1) WO2014057902A1 (enExample)

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US10249804B2 (en) 2016-07-19 2019-04-02 Nichia Corporation Semiconductor device, base, and method for manufacturing same
US10586896B2 (en) 2016-05-11 2020-03-10 Nichia Corporation Semiconductor element, semiconductor device, and method for manufacturing semiconductor element

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TW201543720A (zh) * 2014-05-06 2015-11-16 新世紀光電股份有限公司 封裝結構及其製備方法
JP6565527B2 (ja) * 2014-09-30 2019-08-28 三菱マテリアル株式会社 Ａｇ下地層付パワーモジュール用基板及びパワーモジュール
CN107004643B (zh) * 2014-12-16 2019-07-30 京瓷株式会社 电路基板及电子装置
JP6481409B2 (ja) * 2015-02-19 2019-03-13 三菱マテリアル株式会社 パワーモジュール用基板及びパワーモジュール
JP6613929B2 (ja) * 2016-02-01 2019-12-04 三菱マテリアル株式会社 Ａｇ下地層付き金属部材、Ａｇ下地層付き絶縁回路基板、半導体装置、ヒートシンク付き絶縁回路基板、及び、Ａｇ下地層付き金属部材の製造方法
JP6677886B2 (ja) * 2016-02-29 2020-04-08 三菱マテリアル株式会社 半導体装置
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JP7052374B2 (ja) * 2017-02-06 2022-04-12 三菱マテリアル株式会社 セラミックス／アルミニウム接合体の製造方法、絶縁回路基板の製造方法
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TW202005020A (zh) * 2018-05-28 2020-01-16 艾姆勒車電股份有限公司 Ｉｇｂｔ模組散熱結構
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WO2020241739A1 (ja) * 2019-05-29 2020-12-03 国立大学法人大阪大学 接合構造体の製造方法、及び接合構造体
KR102413017B1 (ko) * 2019-12-02 2022-06-23 미쓰비시 마테리알 가부시키가이샤 구리/세라믹스 접합체, 절연 회로 기판, 및 구리/세라믹스 접합체의 제조 방법, 절연 회로 기판의 제조 방법
CN111415587B (zh) * 2020-03-31 2022-04-19 京东方科技集团股份有限公司 一种显示基板及其制备方法和显示面板
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10586896B2 (en) 2016-05-11 2020-03-10 Nichia Corporation Semiconductor element, semiconductor device, and method for manufacturing semiconductor element
US11349049B2 (en) 2016-05-11 2022-05-31 Nichia Corporation Semiconductor element, semiconductor device, and method for manufacturing semiconductor element
US10249804B2 (en) 2016-07-19 2019-04-02 Nichia Corporation Semiconductor device, base, and method for manufacturing same

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Publication number Publication date
US9401340B2 (en) 2016-07-26
JP2014078558A (ja) 2014-05-01
US20150255419A1 (en) 2015-09-10
EP2908333A1 (en) 2015-08-19
TWI609462B (zh) 2017-12-21
CN104704618A (zh) 2015-06-10
IN2015DN02878A (enExample) 2015-09-11
TW201421618A (zh) 2014-06-01
KR102163532B1 (ko) 2020-10-08
CN104704618B (zh) 2017-08-08
EP2908333A4 (en) 2016-06-08
WO2014057902A1 (ja) 2014-04-17
KR20150063065A (ko) 2015-06-08

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