KR102009869B1 - 리소그래피 패터닝 공정 및 상기 공정에 사용하기 위한 레지스트 - Google Patents
리소그래피 패터닝 공정 및 상기 공정에 사용하기 위한 레지스트 Download PDFInfo
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- KR102009869B1 KR102009869B1 KR1020187024586A KR20187024586A KR102009869B1 KR 102009869 B1 KR102009869 B1 KR 102009869B1 KR 1020187024586 A KR1020187024586 A KR 1020187024586A KR 20187024586 A KR20187024586 A KR 20187024586A KR 102009869 B1 KR102009869 B1 KR 102009869B1
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- radiation
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- HSXKFDGTKKAEHL-UHFFFAOYSA-N tantalum(v) ethoxide Chemical compound [Ta+5].CC[O-].CC[O-].CC[O-].CC[O-].CC[O-] HSXKFDGTKKAEHL-UHFFFAOYSA-N 0.000 claims description 3
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims 4
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- 238000009472 formulation Methods 0.000 description 1
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F30/00—Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal
- C08F30/04—Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal
- C08F30/08—Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal containing silicon
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
- G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
- G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161505768P | 2011-07-08 | 2011-07-08 | |
| US61/505,768 | 2011-07-08 | ||
| PCT/EP2012/060133 WO2013007442A1 (en) | 2011-07-08 | 2012-05-30 | Lithographic patterning process and resists to use therein |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020147003284A Division KR101909567B1 (ko) | 2011-07-08 | 2012-05-30 | 리소그래피 패터닝 공정 및 상기 공정에 사용하기 위한 레지스트 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20180099913A KR20180099913A (ko) | 2018-09-05 |
| KR102009869B1 true KR102009869B1 (ko) | 2019-08-12 |
Family
ID=46208008
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020147003284A Active KR101909567B1 (ko) | 2011-07-08 | 2012-05-30 | 리소그래피 패터닝 공정 및 상기 공정에 사용하기 위한 레지스트 |
| KR1020187024586A Active KR102009869B1 (ko) | 2011-07-08 | 2012-05-30 | 리소그래피 패터닝 공정 및 상기 공정에 사용하기 위한 레지스트 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020147003284A Active KR101909567B1 (ko) | 2011-07-08 | 2012-05-30 | 리소그래피 패터닝 공정 및 상기 공정에 사용하기 위한 레지스트 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9261784B2 (cg-RX-API-DMAC7.html) |
| EP (1) | EP2729844B1 (cg-RX-API-DMAC7.html) |
| JP (2) | JP6236000B2 (cg-RX-API-DMAC7.html) |
| KR (2) | KR101909567B1 (cg-RX-API-DMAC7.html) |
| CN (2) | CN103649830B (cg-RX-API-DMAC7.html) |
| TW (1) | TWI631423B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2013007442A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9632411B2 (en) * | 2013-03-14 | 2017-04-25 | Applied Materials, Inc. | Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor |
| US9354508B2 (en) | 2013-03-12 | 2016-05-31 | Applied Materials, Inc. | Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor |
| US20140272684A1 (en) | 2013-03-12 | 2014-09-18 | Applied Materials, Inc. | Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor |
| US9703197B2 (en) * | 2013-09-26 | 2017-07-11 | National Institute For Materials Science | High-sensitivity multilayer resist film and method of increasing photosensitivity of resist film |
| KR102306612B1 (ko) | 2014-01-31 | 2021-09-29 | 램 리써치 코포레이션 | 진공-통합된 하드마스크 프로세스 및 장치 |
| KR101845188B1 (ko) | 2014-02-24 | 2018-04-03 | 도쿄엘렉트론가부시키가이샤 | 광 민감형 화학적 증폭 레지스트 내에 산 산탄 잡음으로 복제되는 euv 산탄 잡음의 완화 |
| WO2015127459A1 (en) | 2014-02-24 | 2015-08-27 | Tokyo Electron Limited | Methods and techniques to use with photosensitized chemically amplified resist chemicals and processes |
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| CN108594599B (zh) | 2022-04-22 |
| JP6236000B2 (ja) | 2017-11-22 |
| JP2018025823A (ja) | 2018-02-15 |
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| JP6637943B2 (ja) | 2020-01-29 |
| TW201305736A (zh) | 2013-02-01 |
| US9261784B2 (en) | 2016-02-16 |
| CN103649830A (zh) | 2014-03-19 |
| WO2013007442A1 (en) | 2013-01-17 |
| KR20140047120A (ko) | 2014-04-21 |
| KR101909567B1 (ko) | 2018-10-18 |
| CN108594599A (zh) | 2018-09-28 |
| TWI631423B (zh) | 2018-08-01 |
| EP2729844A1 (en) | 2014-05-14 |
| US20140212819A1 (en) | 2014-07-31 |
| CN103649830B (zh) | 2018-06-01 |
| KR20180099913A (ko) | 2018-09-05 |
| JP2014521111A (ja) | 2014-08-25 |
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