KR101979944B1 - 발광소자 - Google Patents

발광소자 Download PDF

Info

Publication number
KR101979944B1
KR101979944B1 KR1020120115802A KR20120115802A KR101979944B1 KR 101979944 B1 KR101979944 B1 KR 101979944B1 KR 1020120115802 A KR1020120115802 A KR 1020120115802A KR 20120115802 A KR20120115802 A KR 20120115802A KR 101979944 B1 KR101979944 B1 KR 101979944B1
Authority
KR
South Korea
Prior art keywords
electrode
light emitting
emitting device
semiconductor layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020120115802A
Other languages
English (en)
Korean (ko)
Other versions
KR20140049689A (ko
Inventor
임동욱
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020120115802A priority Critical patent/KR101979944B1/ko
Priority to US14/056,211 priority patent/US9660160B2/en
Priority to EP13189140.0A priority patent/EP2722899B1/en
Priority to JP2013217084A priority patent/JP2014086728A/ja
Priority to CN201310491634.7A priority patent/CN103779471B/zh
Publication of KR20140049689A publication Critical patent/KR20140049689A/ko
Application granted granted Critical
Publication of KR101979944B1 publication Critical patent/KR101979944B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
KR1020120115802A 2012-10-18 2012-10-18 발광소자 Active KR101979944B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020120115802A KR101979944B1 (ko) 2012-10-18 2012-10-18 발광소자
US14/056,211 US9660160B2 (en) 2012-10-18 2013-10-17 Light emitting device
EP13189140.0A EP2722899B1 (en) 2012-10-18 2013-10-17 Light emitting device
JP2013217084A JP2014086728A (ja) 2012-10-18 2013-10-18 発光素子
CN201310491634.7A CN103779471B (zh) 2012-10-18 2013-10-18 发光器件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120115802A KR101979944B1 (ko) 2012-10-18 2012-10-18 발광소자

Publications (2)

Publication Number Publication Date
KR20140049689A KR20140049689A (ko) 2014-04-28
KR101979944B1 true KR101979944B1 (ko) 2019-05-17

Family

ID=49378167

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120115802A Active KR101979944B1 (ko) 2012-10-18 2012-10-18 발광소자

Country Status (5)

Country Link
US (1) US9660160B2 (enExample)
EP (1) EP2722899B1 (enExample)
JP (1) JP2014086728A (enExample)
KR (1) KR101979944B1 (enExample)
CN (1) CN103779471B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104576862B (zh) * 2014-12-24 2017-08-25 江苏巨晶新材料科技有限公司 一种基于铜衬底的氮化物led垂直芯片及其制备方法
KR102419272B1 (ko) * 2017-12-19 2022-07-11 엘지디스플레이 주식회사 발광 사운드 소자, 사운드 출력 장치 및 디스플레이 장치
CN108281540B (zh) * 2018-01-26 2020-05-22 扬州乾照光电有限公司 一种热电分流垂直结构led芯片及其制作方法
US11658460B2 (en) * 2018-03-26 2023-05-23 Lawrence Livermore National Security, Llc Engineered current-density profile diode laser
KR102097865B1 (ko) * 2018-05-04 2020-05-27 고려대학교 산학협력단 발광소자
CN210489638U (zh) * 2018-07-09 2020-05-08 首尔伟傲世有限公司 发光元件
WO2020100293A1 (ja) * 2018-11-16 2020-05-22 堺ディスプレイプロダクト株式会社 マイクロｌｅｄデバイスおよびその製造方法
WO2020100295A1 (ja) * 2018-11-16 2020-05-22 堺ディスプレイプロダクト株式会社 マイクロｌｅｄデバイスおよびその製造方法
JPWO2020100292A1 (ja) * 2018-11-16 2021-09-24 堺ディスプレイプロダクト株式会社 マイクロｌｅｄデバイスおよびその製造方法
JPWO2020115851A1 (ja) * 2018-12-06 2021-10-14 堺ディスプレイプロダクト株式会社 マイクロｌｅｄデバイスおよびその製造方法
CN110265520A (zh) * 2019-07-02 2019-09-20 华南理工大学 优化电流分布的嵌入式电极结构led芯片及其制备方法
KR102174004B1 (ko) * 2020-03-31 2020-11-04 고려대학교 산학협력단 발광소자
CN113363365B (zh) * 2021-08-09 2021-11-05 南昌凯捷半导体科技有限公司 一种多电流通道倒装AlGaInPmini-LED芯片及其制备方法
CN116314508A (zh) * 2023-05-22 2023-06-23 江西兆驰半导体有限公司 一种高光效led外延片及其制备方法、led芯片

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100706887B1 (ko) * 2005-10-07 2007-04-12 포모사 에피택시 인코포레이션 발광 다이오드 칩
JP2011060996A (ja) * 2009-09-10 2011-03-24 Napura:Kk 発光ダイオード、発光装置、照明装置、ディスプレイ及び信号灯

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0536346A (ja) * 1991-07-31 1993-02-12 Sony Corp 金属製フイールドエミツタの作製方法
JPH10270802A (ja) * 1997-03-25 1998-10-09 Sharp Corp 窒化物系ｉｉｉ−ｖ族化合物半導体装置及びその製造方法
JPH11246289A (ja) * 1998-03-02 1999-09-14 Tokuyama Corp メタライズされた窒化アルミニウム基板の製造方法
JP2001176967A (ja) * 1999-12-21 2001-06-29 Nec Corp 半導体装置及びその製造方法
TW439304B (en) * 2000-01-05 2001-06-07 Ind Tech Res Inst GaN series III-V compound semiconductor devices
US7233028B2 (en) * 2001-02-23 2007-06-19 Nitronex Corporation Gallium nitride material devices and methods of forming the same
US6611002B2 (en) * 2001-02-23 2003-08-26 Nitronex Corporation Gallium nitride material devices and methods including backside vias
US6560006B2 (en) * 2001-04-30 2003-05-06 Agilent Technologies, Inc. Two-dimensional photonic crystal slab waveguide
WO2007069871A1 (en) * 2005-12-16 2007-06-21 Samsung Electronics Co., Ltd. Optical device and method of fabricating the same
CN100446288C (zh) * 2006-08-01 2008-12-24 金芃 通孔垂直结构的半导体芯片及其制造方法
JP5324076B2 (ja) * 2007-11-21 2013-10-23 シャープ株式会社 窒化物半導体用ショットキー電極および窒化物半導体装置
KR101145299B1 (ko) * 2008-12-22 2012-05-14 한국과학기술원 질화물／텅스텐 나노복합분말의 제조방법 및 그 방법에 의해 제조된 질화물／텅스텐 나노복합분말
KR101020910B1 (ko) * 2008-12-24 2011-03-09 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR20110008550A (ko) * 2009-07-20 2011-01-27 삼성전자주식회사 발광 소자 및 그 제조 방법
JP2011029548A (ja) * 2009-07-29 2011-02-10 Mitsubishi Electric Corp 電磁波透過性加飾部品
US8198107B2 (en) * 2009-10-07 2012-06-12 Edison Opto Corporation Method for manufacturing light emitting diode assembly
US20110198609A1 (en) 2010-02-12 2011-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Light-Emitting Devices with Through-Substrate Via Connections
US8604498B2 (en) * 2010-03-26 2013-12-10 Tsmc Solid State Lighting Ltd. Single phosphor layer photonic device for generating white light or color lights
KR101028327B1 (ko) 2010-04-15 2011-04-12 엘지이노텍 주식회사 발광소자, 발광소자 제조방법 및 발광소자 패키지
US20120241718A1 (en) * 2011-03-21 2012-09-27 Walsin Lihwa Corporation High performance light emitting diode
US8344392B2 (en) * 2011-05-12 2013-01-01 Epistar Corporation Light-emitting element and the manufacturing method thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100706887B1 (ko) * 2005-10-07 2007-04-12 포모사 에피택시 인코포레이션 발광 다이오드 칩
JP2011060996A (ja) * 2009-09-10 2011-03-24 Napura:Kk 発光ダイオード、発光装置、照明装置、ディスプレイ及び信号灯

Also Published As

Publication number Publication date
EP2722899A3 (en) 2015-11-18
EP2722899B1 (en) 2018-07-25
CN103779471B (zh) 2017-03-01
KR20140049689A (ko) 2014-04-28
CN103779471A (zh) 2014-05-07
JP2014086728A (ja) 2014-05-12
US9660160B2 (en) 2017-05-23
US20140110742A1 (en) 2014-04-24
EP2722899A2 (en) 2014-04-23

Similar Documents

Publication Publication Date Title
KR101979944B1 (ko) 발광소자
KR101154709B1 (ko) 발광 소자, 발광 소자 제조방법, 발광 소자 패키지 및 조명 시스템
US9768346B2 (en) Light-emitting device
KR102175345B1 (ko) 발광소자 및 조명시스템
KR20140144549A (ko) 발광소자
KR102163956B1 (ko) 발광소자 및 조명시스템
KR20150010146A (ko) 발광소자 및 조명시스템
KR20120014972A (ko) 발광 소자, 발광 소자 제조방법, 발광 소자 패키지, 및 조명 시스템
US10008633B2 (en) Light-emitting diode and lighting system
KR102200000B1 (ko) 발광소자 및 조명시스템
KR102181404B1 (ko) 발광소자 및 조명시스템
KR102445539B1 (ko) 발광소자 및 조명장치
KR102181429B1 (ko) 발광소자 및 조명시스템
KR102153125B1 (ko) 발광소자 및 조명시스템
KR101734544B1 (ko) 발광소자 패키지
KR102163967B1 (ko) 발광소자 및 조명시스템
KR102181398B1 (ko) 발광소자 및 조명시스템
KR102175315B1 (ko) 발광소자 및 조명시스템
KR101920238B1 (ko) 발광소자
KR102109131B1 (ko) 발광소자 및 조명시스템
KR20150010147A (ko) 발광소자 및 조명시스템
KR20140083243A (ko) 발광소자
KR20150006631A (ko) 발광소자 및 조명시스템
KR20150061948A (ko) 발광소자 및 조명시스템
KR20140125599A (ko) 발광소자

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20121018

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20171018

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 20121018

Comment text: Patent Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20180821

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20190214

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20190513

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20190514

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20220405

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20230410

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20240409

Start annual number: 6

End annual number: 6