JP2014086728A - 発光素子 - Google Patents

発光素子 Download PDF

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Publication number
JP2014086728A
JP2014086728A JP2013217084A JP2013217084A JP2014086728A JP 2014086728 A JP2014086728 A JP 2014086728A JP 2013217084 A JP2013217084 A JP 2013217084A JP 2013217084 A JP2013217084 A JP 2013217084A JP 2014086728 A JP2014086728 A JP 2014086728A
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JP
Japan
Prior art keywords
light emitting
emitting device
electrode
via electrode
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2013217084A
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English (en)
Japanese (ja)
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JP2014086728A5 (enExample
Inventor
Dong Wook Lim
リム，ドンウク
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
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LG Innotek Co Ltd
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Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of JP2014086728A publication Critical patent/JP2014086728A/ja
Publication of JP2014086728A5 publication Critical patent/JP2014086728A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
JP2013217084A 2012-10-18 2013-10-18 発光素子 Pending JP2014086728A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020120115802A KR101979944B1 (ko) 2012-10-18 2012-10-18 발광소자
KR10-2012-0115802 2012-10-18

Publications (2)

Publication Number Publication Date
JP2014086728A true JP2014086728A (ja) 2014-05-12
JP2014086728A5 JP2014086728A5 (enExample) 2016-11-10

Family

ID=49378167

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013217084A Pending JP2014086728A (ja) 2012-10-18 2013-10-18 発光素子

Country Status (5)

Country Link
US (1) US9660160B2 (enExample)
EP (1) EP2722899B1 (enExample)
JP (1) JP2014086728A (enExample)
KR (1) KR101979944B1 (enExample)
CN (1) CN103779471B (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020100293A1 (ja) * 2018-11-16 2020-05-22 堺ディスプレイプロダクト株式会社 マイクロｌｅｄデバイスおよびその製造方法
WO2020100295A1 (ja) * 2018-11-16 2020-05-22 堺ディスプレイプロダクト株式会社 マイクロｌｅｄデバイスおよびその製造方法
WO2020100292A1 (ja) * 2018-11-16 2020-05-22 堺ディスプレイプロダクト株式会社 マイクロｌｅｄデバイスおよびその製造方法
WO2020115851A1 (ja) * 2018-12-06 2020-06-11 堺ディスプレイプロダクト株式会社 マイクロｌｅｄデバイスおよびその製造方法

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CN104576862B (zh) * 2014-12-24 2017-08-25 江苏巨晶新材料科技有限公司 一种基于铜衬底的氮化物led垂直芯片及其制备方法
KR102419272B1 (ko) * 2017-12-19 2022-07-11 엘지디스플레이 주식회사 발광 사운드 소자, 사운드 출력 장치 및 디스플레이 장치
CN108281540B (zh) * 2018-01-26 2020-05-22 扬州乾照光电有限公司 一种热电分流垂直结构led芯片及其制作方法
US11658460B2 (en) * 2018-03-26 2023-05-23 Lawrence Livermore National Security, Llc Engineered current-density profile diode laser
KR102097865B1 (ko) * 2018-05-04 2020-05-27 고려대학교 산학협력단 발광소자
CN210489638U (zh) * 2018-07-09 2020-05-08 首尔伟傲世有限公司 发光元件
CN110265520A (zh) * 2019-07-02 2019-09-20 华南理工大学 优化电流分布的嵌入式电极结构led芯片及其制备方法
KR102174004B1 (ko) * 2020-03-31 2020-11-04 고려대학교 산학협력단 발광소자
CN113363365B (zh) * 2021-08-09 2021-11-05 南昌凯捷半导体科技有限公司 一种多电流通道倒装AlGaInPmini-LED芯片及其制备方法
CN116314508A (zh) * 2023-05-22 2023-06-23 江西兆驰半导体有限公司 一种高光效led外延片及其制备方法、led芯片

Citations (13)

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JPH0536346A (ja) * 1991-07-31 1993-02-12 Sony Corp 金属製フイールドエミツタの作製方法
JPH10270802A (ja) * 1997-03-25 1998-10-09 Sharp Corp 窒化物系ｉｉｉ−ｖ族化合物半導体装置及びその製造方法
JPH11246289A (ja) * 1998-03-02 1999-09-14 Tokuyama Corp メタライズされた窒化アルミニウム基板の製造方法
JP2001176967A (ja) * 1999-12-21 2001-06-29 Nec Corp 半導体装置及びその製造方法
JP2001196633A (ja) * 2000-01-05 2001-07-19 Ind Technol Res Inst 窒化ガリウムを基礎とする１３族−１５族化合物半導体素子および素子用電極
JP2002341164A (ja) * 2001-04-30 2002-11-27 Agilent Technol Inc ２次元フォトニック結晶スラブ導波路
JP2009519608A (ja) * 2005-12-16 2009-05-14 サムスン エレクトロニクス カンパニー リミテッド 光学素子およびその製造方法
JP2009130047A (ja) * 2007-11-21 2009-06-11 Sharp Corp 窒化物半導体用電極および窒化物半導体装置
JP2010144248A (ja) * 2008-12-22 2010-07-01 Korea Advanced Inst Of Science & Technology 窒化物／タングステンナノ複合粉末の製造方法及びその方法によって製造された窒化物／タングステンナノ複合粉末
JP2010153870A (ja) * 2008-12-24 2010-07-08 Lg Innotek Co Ltd 半導体発光素子
JP2011029548A (ja) * 2009-07-29 2011-02-10 Mitsubishi Electric Corp 電磁波透過性加飾部品
JP2011060996A (ja) * 2009-09-10 2011-03-24 Napura:Kk 発光ダイオード、発光装置、照明装置、ディスプレイ及び信号灯
JP2011211189A (ja) * 2010-03-26 2011-10-20 Taiwan Semiconductor Manufacturing Co Ltd 白色光、又は、カラー光を生成する光素子

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US7233028B2 (en) * 2001-02-23 2007-06-19 Nitronex Corporation Gallium nitride material devices and methods of forming the same
US6611002B2 (en) * 2001-02-23 2003-08-26 Nitronex Corporation Gallium nitride material devices and methods including backside vias
TWI270222B (en) * 2005-10-07 2007-01-01 Formosa Epitaxy Inc Light emitting diode chip
CN100446288C (zh) * 2006-08-01 2008-12-24 金芃 通孔垂直结构的半导体芯片及其制造方法
KR20110008550A (ko) * 2009-07-20 2011-01-27 삼성전자주식회사 발광 소자 및 그 제조 방법
US8198107B2 (en) * 2009-10-07 2012-06-12 Edison Opto Corporation Method for manufacturing light emitting diode assembly
US20110198609A1 (en) 2010-02-12 2011-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Light-Emitting Devices with Through-Substrate Via Connections
KR101028327B1 (ko) 2010-04-15 2011-04-12 엘지이노텍 주식회사 발광소자, 발광소자 제조방법 및 발광소자 패키지
US20120241718A1 (en) * 2011-03-21 2012-09-27 Walsin Lihwa Corporation High performance light emitting diode
US8344392B2 (en) * 2011-05-12 2013-01-01 Epistar Corporation Light-emitting element and the manufacturing method thereof

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0536346A (ja) * 1991-07-31 1993-02-12 Sony Corp 金属製フイールドエミツタの作製方法
JPH10270802A (ja) * 1997-03-25 1998-10-09 Sharp Corp 窒化物系ｉｉｉ−ｖ族化合物半導体装置及びその製造方法
JPH11246289A (ja) * 1998-03-02 1999-09-14 Tokuyama Corp メタライズされた窒化アルミニウム基板の製造方法
JP2001176967A (ja) * 1999-12-21 2001-06-29 Nec Corp 半導体装置及びその製造方法
JP2001196633A (ja) * 2000-01-05 2001-07-19 Ind Technol Res Inst 窒化ガリウムを基礎とする１３族−１５族化合物半導体素子および素子用電極
JP2002341164A (ja) * 2001-04-30 2002-11-27 Agilent Technol Inc ２次元フォトニック結晶スラブ導波路
JP2009519608A (ja) * 2005-12-16 2009-05-14 サムスン エレクトロニクス カンパニー リミテッド 光学素子およびその製造方法
JP2009130047A (ja) * 2007-11-21 2009-06-11 Sharp Corp 窒化物半導体用電極および窒化物半導体装置
JP2010144248A (ja) * 2008-12-22 2010-07-01 Korea Advanced Inst Of Science & Technology 窒化物／タングステンナノ複合粉末の製造方法及びその方法によって製造された窒化物／タングステンナノ複合粉末
JP2010153870A (ja) * 2008-12-24 2010-07-08 Lg Innotek Co Ltd 半導体発光素子
JP2011029548A (ja) * 2009-07-29 2011-02-10 Mitsubishi Electric Corp 電磁波透過性加飾部品
JP2011060996A (ja) * 2009-09-10 2011-03-24 Napura:Kk 発光ダイオード、発光装置、照明装置、ディスプレイ及び信号灯
JP2011211189A (ja) * 2010-03-26 2011-10-20 Taiwan Semiconductor Manufacturing Co Ltd 白色光、又は、カラー光を生成する光素子

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020100293A1 (ja) * 2018-11-16 2020-05-22 堺ディスプレイプロダクト株式会社 マイクロｌｅｄデバイスおよびその製造方法
WO2020100295A1 (ja) * 2018-11-16 2020-05-22 堺ディスプレイプロダクト株式会社 マイクロｌｅｄデバイスおよびその製造方法
WO2020100292A1 (ja) * 2018-11-16 2020-05-22 堺ディスプレイプロダクト株式会社 マイクロｌｅｄデバイスおよびその製造方法
JPWO2020100293A1 (ja) * 2018-11-16 2021-09-24 堺ディスプレイプロダクト株式会社 マイクロｌｅｄデバイスおよびその製造方法
JPWO2020100295A1 (ja) * 2018-11-16 2021-10-07 堺ディスプレイプロダクト株式会社 マイクロｌｅｄデバイスおよびその製造方法
WO2020115851A1 (ja) * 2018-12-06 2020-06-11 堺ディスプレイプロダクト株式会社 マイクロｌｅｄデバイスおよびその製造方法
JPWO2020115851A1 (ja) * 2018-12-06 2021-10-14 堺ディスプレイプロダクト株式会社 マイクロｌｅｄデバイスおよびその製造方法

Also Published As

Publication number Publication date
EP2722899A3 (en) 2015-11-18
EP2722899B1 (en) 2018-07-25
CN103779471B (zh) 2017-03-01
KR20140049689A (ko) 2014-04-28
CN103779471A (zh) 2014-05-07
US9660160B2 (en) 2017-05-23
US20140110742A1 (en) 2014-04-24
KR101979944B1 (ko) 2019-05-17
EP2722899A2 (en) 2014-04-23

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