KR101963653B1 - 반도체 기억 장치 - Google Patents

반도체 기억 장치 Download PDF

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Publication number
KR101963653B1
KR101963653B1 KR1020120051088A KR20120051088A KR101963653B1 KR 101963653 B1 KR101963653 B1 KR 101963653B1 KR 1020120051088 A KR1020120051088 A KR 1020120051088A KR 20120051088 A KR20120051088 A KR 20120051088A KR 101963653 B1 KR101963653 B1 KR 101963653B1
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KR
South Korea
Prior art keywords
circuit
transistor
signal
data
gate
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Expired - Fee Related
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KR1020120051088A
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English (en)
Korean (ko)
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KR20120129776A (ko
Inventor
세이이치 요네다
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Priority to KR1020120051088A priority Critical patent/KR101963653B1/ko
Publication of KR20120129776A publication Critical patent/KR20120129776A/ko
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356008—Bistable circuits ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Shift Register Type Memory (AREA)
  • Read Only Memory (AREA)
  • Physical Vapour Deposition (AREA)
KR1020120051088A 2011-05-18 2012-05-14 반도체 기억 장치 Expired - Fee Related KR101963653B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020120051088A KR101963653B1 (ko) 2011-05-18 2012-05-14 반도체 기억 장치

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011111738 2011-05-18
JPJP-P-2011-111738 2011-05-18
KR1020120051088A KR101963653B1 (ko) 2011-05-18 2012-05-14 반도체 기억 장치

Publications (2)

Publication Number Publication Date
KR20120129776A KR20120129776A (ko) 2012-11-28
KR101963653B1 true KR101963653B1 (ko) 2019-03-29

Family

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Family Applications (1)

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KR1020120051088A Expired - Fee Related KR101963653B1 (ko) 2011-05-18 2012-05-14 반도체 기억 장치

Country Status (4)

Country Link
US (1) US8824193B2 (enExample)
JP (1) JP5955636B2 (enExample)
KR (1) KR101963653B1 (enExample)
TW (1) TWI552150B (enExample)

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JP6396671B2 (ja) 2013-04-26 2018-09-26 株式会社半導体エネルギー研究所 半導体装置
TWI646782B (zh) * 2014-04-11 2019-01-01 日商半導體能源研究所股份有限公司 保持電路、保持電路的驅動方法以及包括保持電路的半導體裝置
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