JP2012256412A - 半導体記憶装置 - Google Patents
半導体記憶装置 Download PDFInfo
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- JP2012256412A JP2012256412A JP2012110167A JP2012110167A JP2012256412A JP 2012256412 A JP2012256412 A JP 2012256412A JP 2012110167 A JP2012110167 A JP 2012110167A JP 2012110167 A JP2012110167 A JP 2012110167A JP 2012256412 A JP2012256412 A JP 2012256412A
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- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 230000005307 ferromagnetism Effects 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000001307 laser spectroscopy Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 230000003211 malignant effect Effects 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 150000002751 molybdenum Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 238000007500 overflow downdraw method Methods 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 238000007725 thermal activation Methods 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356008—Bistable circuits ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
- G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
- G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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Abstract
【解決手段】不揮発性の半導体記憶装置とする際、揮発性の記憶装置と不揮発性の記憶装置を分離することなく構成する。具体的に半導体記憶装置には、酸化物半導体を半導体層に有するトランジスタ及び容量素子に接続されたデータ保持部にデータを保持する構成とする。そしてデータ保持部に保持される電位は、電荷をリークすることなくデータの出力が可能なデータ電位保持回路及び電荷をリークすることなくデータ保持部に保持した電位を容量素子を介した容量結合により制御可能なデータ電位制御回路で制御される。
【選択図】図1
Description
半導体記憶装置は、複数段の記憶回路をカスケード接続することによって多ビットのレジスタとして機能する回路とすることができる。本実施の形態では、複数段の記憶回路を有する半導体記憶装置の構成について説明する。なお本実施の形態で説明する半導体記憶装置は、信号処理装置の記憶装置に用いることができる。
本実施の形態では、上記実施の形態1で説明した半導体記憶装置における記憶回路の変形例について説明する。
本実施の形態では、実施の形態1で示した半導体記憶装置を用いた信号処理装置の構成について説明する。
本実施の形態では、本発明の一態様に係る信号処理装置の一つである、CPUの構成について説明する。
図3(A)に示した半導体記憶装置において、チャネルがシリコンに形成される場合における第1のインバータ回路121_1を構成するトランジスタ(以下、トランジスタ191)と、チャネルが酸化物半導体層に形成される第1のトランジスタ111_1と、第1の容量素子112_1とを例に挙げて、半導体記憶装置10の作製方法について説明する。
本実施の形態では、CAAC−OS(C Axis Aligned Crystalline Oxide Semiconductor)膜について説明する。
In、Sn、Znを主成分とする酸化物半導体をチャネル形成領域とするトランジスタは、該酸化物半導体を形成する際に基板を加熱して成膜すること、或いは酸化物半導体膜を形成した後に熱処理を行うことで良好な特性を得ることができる。なお、主成分とは組成比で5atomic%以上含まれる元素をいう。
試料1および試料2のいずれも、BT試験前後におけるしきい値電圧の変動が小さく、信頼性が高いことがわかる。
100_1 記憶回路
100_2 記憶回路
100_3〜100_N 記憶回路
111_1 トランジスタ
111_2 トランジスタ
111_3〜111_N トランジスタ
112_1 容量素子
112_2 容量素子
112_3〜112_N 容量素子
113_1 データ電位保持出力回路
113_2 データ電位保持出力回路
113_3〜113_N データ電位保持出力回路
114_1 データ電位制御回路
114_2 データ電位制御回路
114_3〜114_N データ電位制御回路
115_1 ゲート選択信号生成回路
115_2 ゲート選択信号生成回路
115_3〜115_N ゲート選択信号生成回路
121_1 インバータ回路
121_2 インバータ回路
121_3〜121_N インバータ回路
122_1 NOR回路
122_2 NOR回路
122_3〜122_N NOR回路
123_1 出力データ用インバータ回路
123_2 出力データ用インバータ回路
123_3〜123_N 出力データ用インバータ回路
124_1 ゲート選択NOR回路
124_2 ゲート選択NOR回路
124_3〜124_N ゲート選択NOR回路
125_1 リセットトランジスタ
125_2 リセットトランジスタ
125_3〜125_N リセットトランジスタ
130_1 記憶回路
130_2 記憶回路
130_3〜130_N 記憶回路
135 インバータ回路
140_1 記憶回路
140_2 記憶回路
140_3〜140_N 記憶回路
141_1 記憶回路
141_2 記憶回路
141_3〜141_N 記憶回路
143_1 レベルシフタ回路
143_2 レベルシフタ回路
143_3〜143_N レベルシフタ回路
150 信号処理装置
151 演算装置
152 演算装置
153 半導体記憶装置
154 半導体記憶装置
155 半導体記憶装置
156 制御装置
157 電源制御回路
191 トランジスタ
400 トランジスタ
401 インバータ回路
700 基板
701 絶縁膜
702 半導体膜
703 ゲート絶縁膜
704 半導体膜
707 ゲート電極
709 不純物領域
710 チャネル形成領域
712 絶縁膜
713 絶縁膜
716 酸化物半導体層
719 導電膜
720 導電膜
721 ゲート絶縁膜
722 ゲート電極
723 導電膜
724 絶縁膜
725 開口部
726 配線
727 絶縁膜
1102 酸化物半導体膜
1102a 高抵抗領域
1102b 低抵抗領域
1103 ゲート絶縁膜
1107 ゲート電極
1108 ゲート絶縁膜
1113 絶縁膜
1114 側壁絶縁膜
1115 絶縁物
1117 絶縁層
1119 導電膜
1120 導電膜
1124 絶縁膜
1128 配線
1129 保護膜
9900 基板
9901 ALU
9902 ALU・Controller
9903 Instruction・Decoder
9904 Interrupt・Controller
9905 Timing・Controller
9906 Register
9907 Register・Controller
9908 Bus・I/F
9909 ROM
9920 ROM・I/F
Claims (6)
- 記憶回路がカスケード接続された半導体記憶装置において、
(2m−1)段(mは1以上の自然数)の記憶回路は、
第1端子よりデータが供給される第(2m−1)のトランジスタと、
前記第(2m−1)のトランジスタの第2端子と、2m段の記憶回路が有する第2mのトランジスタの第1端子と、第(2m−1)の容量素子の第1の電極と、に電気的に接続され、前記データを保持する第(2m−1)のデータ保持部と、
前記第(2m−1)のデータ保持部における電位を保持した状態で前記データの出力を行う第(2m−1)のデータ電位保持出力回路と、
前記第(2m−1)のデータ電位保持出力回路の出力信号と第1の容量素子制御信号とが入力され、前記第(2m−1)の容量素子の第2の電極の電位を制御する第(2m−1)のデータ電位制御回路と、を有し、
2m段の記憶回路は、
前記第2mのトランジスタと、
前記第2mのトランジスタの第2端子と、(2m+1)段の記憶回路が有する第(2m+1)のトランジスタの第1端子と、第2mの容量素子の第1の電極と、に電気的に接続され、前記第2mのトランジスタを介して供給される前記データを保持する第2mのデータ保持部と、
前記第2mのデータ保持部における電位を保持した状態で前記データの出力を行う第2mのデータ電位保持出力回路と、
前記第2mのデータ電位保持出力回路の出力信号と第2の容量素子制御信号とが入力され、前記第2mの容量素子の第2の電極の電位を制御する第2mのデータ電位制御回路と、を有し、
前記第(2m―1)のトランジスタは、第1のゲート制御信号及び第(2m―1)のイネーブル信号が入力される第(2m―1)のゲート選択信号生成回路がゲートに接続され、当該第(2m―1)のゲート選択信号生成回路により導通状態または非導通状態が制御され、
前記第2mのトランジスタは、第2のゲート制御信号及び第2mのイネーブル信号が入力される第2mのゲート選択信号生成回路がゲートに接続され、当該第2mのゲート選択信号生成回路により導通状態または非導通状態が制御され、
前記第(2m―1)のデータ保持部は、前記第(2m―1)のトランジスタ及び前記第2mのトランジスタを非導通状態とすることで前記データを保持し、
前記第2mのデータ保持部は、前記第2mのトランジスタ及び前記第(2m+1)のトランジスタを非導通状態とすることで前記データを保持し、
前記第(2m―1)のデータ電位制御回路は、前記第(2m―1)のデータ電位制御回路の出力端子の電位を変化させ、前記第(2m―1)の容量素子を介した容量結合により前記第(2m―1)のデータ保持部の電位を制御し、
前記第2mのデータ電位制御回路は、前記第2mのデータ電位制御回路の出力端子の電位を変化させ、前記第2mの容量素子を介した容量結合により前記第2mのデータ保持部の電位を制御する、半導体記憶装置。 - 記憶回路がカスケード接続された半導体記憶装置において、
(2m−1)段の記憶回路は、
第1端子よりデータが供給される第(2m−1)のトランジスタと、
前記第(2m−1)のトランジスタの第2端子と、2m段の記憶回路が有する第2mのトランジスタの第1端子と、第(2m−1)の容量素子の第1の電極と、第(2m−1)のインバータ回路の入力端子と、に電気的に接続され、前記データを保持する第(2m−1)のデータ保持部と、
前記第(2m−1)のインバータ回路の出力端子の信号と第1の容量素子制御信号とが入力され、出力端子が前記第(2m−1)の容量素子の第2の電極に電気的に接続された第(2m−1)の否定論理和回路と、を有し、
2m段の記憶回路は、
前記第2mのトランジスタと、
前記第2mのトランジスタの第2端子と、(2m+1)段の記憶回路が有する第(2m+1)のトランジスタの第1端子と、第2mの容量素子の第1の電極と、第2mのインバータ回路の入力端子と、に電気的に接続され、前記第2mのトランジスタを介して供給される前記データを保持する第2mのデータ保持部と、
前記第2mのインバータ回路の出力端子の信号と第2の容量素子制御信号とが入力され、出力端子が前記第2mの容量素子の第2の電極に電気的に接続された第2mの否定論理和回路と、を有し、
前記(2m−1)段目の記憶回路における前記第(2m−1)のトランジスタは、第1のゲート制御信号及び第(2m−1)のイネーブル信号が入力される第(2m−1)のゲート選択信号生成回路がゲートに接続され、当該第(2m−1)のゲート選択信号生成回路により導通状態または非導通状態が制御され、
前記2m段目の記憶回路における前記第2mのトランジスタは、第2のゲート制御信号及び第2mのイネーブル信号が入力される第2mのゲート選択信号生成回路がゲートに接続され、当該第2mのゲート選択信号生成回路により導通状態または非導通状態が制御され、
前記第(2m―1)のデータ保持部は、前記第(2m―1)のトランジスタ及び前記第2mのトランジスタを非導通状態とすることで前記データを保持し、
前記第2mのデータ保持部は、前記第2mのトランジスタ及び前記第(2m+1)のトランジスタを非導通状態とすることで前記データを保持し、
前記第(2m―1)の否定論理和回路は、前記第(2m―1)のインバータ回路の出力端子の信号及び前記第1の容量素子制御信号により前記第(2m―1)の否定論理和回路の出力端子の電位を変化させ、前記第(2m―1)の容量素子を介した容量結合により前記第(2m―1)のデータ保持部の電位を制御し、
前記第2mの否定論理和回路は、前記第2mのインバータ回路の出力端子の信号及び前記第2の容量素子制御信号により前記第2mの否定論理和回路の出力端子の電位を変化させ、前記第2mの容量素子を介した容量結合により前記第2mのデータ保持部の電位を制御する、半導体記憶装置。 - 請求項2において、前記第(2m―1)のインバータ回路、前記第2mのインバータ回路、前記第(2m―1)の否定論理和回路、前記第2mの否定論理和回路、前記第(2m−1)のゲート選択信号生成回路、前記第2mのゲート選択信号生成回路を構成するトランジスタはシリコンを半導体層に有するトランジスタである半導体記憶装置。
- 請求項1乃至請求項3のいずれか一において、前記シリコンをチャネル形成領域に有するトランジスタと前記第(2m―1)のトランジスタ及び第2mのトランジスタとが積層して設けられている半導体記憶装置。
- 請求項1乃至請求項4のいずれか一において、前記第(2m―1)のトランジスタ及び前記第2mのトランジスタは、酸化物半導体をチャネル形成領域に有するトランジスタである半導体記憶装置。
- 請求項5において、前記酸化物半導体は、In−Sn−Zn系酸化物半導体である半導体記憶装置。
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TW201301280A (zh) | 2013-01-01 |
US20120294066A1 (en) | 2012-11-22 |
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KR20120129776A (ko) | 2012-11-28 |
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US8824193B2 (en) | 2014-09-02 |
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