KR101940978B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR101940978B1
KR101940978B1 KR1020120100888A KR20120100888A KR101940978B1 KR 101940978 B1 KR101940978 B1 KR 101940978B1 KR 1020120100888 A KR1020120100888 A KR 1020120100888A KR 20120100888 A KR20120100888 A KR 20120100888A KR 101940978 B1 KR101940978 B1 KR 101940978B1
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South Korea
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electrode
transistor
electrically connected
layer
potential
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Korean (ko)
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KR20130029342A (ko
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순페이 야마자키
준 고야마
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements

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  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020120100888A 2011-09-14 2012-09-12 반도체 장치 Active KR101940978B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011200896 2011-09-14
JPJP-P-2011-200896 2011-09-14

Publications (2)

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KR20130029342A KR20130029342A (ko) 2013-03-22
KR101940978B1 true KR101940978B1 (ko) 2019-01-23

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US (1) US8698137B2 (enExample)
JP (1) JP6049964B2 (enExample)
KR (1) KR101940978B1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11769453B2 (en) 2021-12-29 2023-09-26 Samsung Display Co., Ltd. Electrostatic discharge circuit and display device including the same
US12113058B2 (en) 2020-04-16 2024-10-08 Samsung Display Co., Ltd. Display device with a static electricity discharging circuit

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JP2014045175A (ja) 2012-08-02 2014-03-13 Semiconductor Energy Lab Co Ltd 半導体装置
JP6127425B2 (ja) * 2012-09-26 2017-05-17 凸版印刷株式会社 積層構造体、薄膜トランジスタアレイおよびそれらの製造方法
KR20140052730A (ko) * 2012-10-25 2014-05-07 삼성디스플레이 주식회사 유기 발광 표시 장치, 이를 이용한 인증 방법 및 유기 발광 표시 장치를 포함한 신분증
KR102061764B1 (ko) * 2013-07-31 2020-01-03 엘지디스플레이 주식회사 정전기 방전 회로 및 이를 구비한 디스플레이 장치
KR102105369B1 (ko) 2013-09-25 2020-04-29 삼성디스플레이 주식회사 표시 기판용 모기판, 이의 어레이 검사 방법 및 표시 기판
KR102203388B1 (ko) * 2014-03-24 2021-01-19 삼성디스플레이 주식회사 표시 장치
CN104112758B (zh) * 2014-07-01 2017-02-22 京东方科技集团股份有限公司 发光二极管显示面板及其制作方法、显示装置
KR102317600B1 (ko) * 2014-07-21 2021-10-27 삼성디스플레이 주식회사 표시 장치
US9966000B2 (en) * 2015-01-16 2018-05-08 Apple Inc. Electro-static discharge and electric overstress protection strategy for micro-chip array on panel
CN104966696B (zh) * 2015-05-06 2017-11-28 深圳市华星光电技术有限公司 Tft基板的制作方法及其结构
JP6566316B2 (ja) * 2015-10-23 2019-08-28 Ｔｉａｎｍａ Ｊａｐａｎ株式会社 保護回路および電子機器
CN105632958B (zh) * 2015-12-31 2019-01-04 京东方科技集团股份有限公司 阵列基板母板、阵列基板及其制作方法和显示装置
JP6785563B2 (ja) * 2016-02-19 2020-11-18 三菱電機株式会社 非線形素子、アレイ基板、およびアレイ基板の製造方法
US10371129B2 (en) * 2016-02-26 2019-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and sensor system
CN205452280U (zh) * 2016-03-30 2016-08-10 京东方科技集团股份有限公司 静电防护结构、阵列基板及显示装置
JP2021504952A (ja) * 2017-11-27 2021-02-15 シェンジェン ロイオル テクノロジーズ カンパニー リミテッドＳｈｅｎｚｈｅｎ Ｒｏｙｏｌｅ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｃｏ．， Ｌｔｄ． Ｔｆｔ基板、ｅｓｄ保護回路およびｔｆｔ基板の製造方法
WO2019145827A1 (ja) 2018-01-25 2019-08-01 株式会社半導体エネルギー研究所 半導体材料、および半導体装置
CN210575951U (zh) * 2019-11-06 2020-05-19 北京京东方技术开发有限公司 静电保护单元及阵列基板
EP4141943A4 (en) * 2020-04-23 2023-09-20 BOE Technology Group Co., Ltd. ANTI-CORROSION CIRCUIT, ARRAY SUBSTRATE AND ELECTRONIC DEVICE
KR20220067623A (ko) * 2020-11-17 2022-05-25 삼성디스플레이 주식회사 표시 장치
KR20240155207A (ko) * 2022-02-17 2024-10-28 제이드 버드 디스플레이(상하이) 리미티드 마이크로 디바이스의 정전기 방전 보호 시스템
US20240120345A1 (en) * 2022-10-11 2024-04-11 Samsung Display Co., Ltd. Display device

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JP2006060191A (ja) 2004-07-23 2006-03-02 Seiko Epson Corp 薄膜半導体装置及びその製造方法、電気光学装置、電子機器
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12113058B2 (en) 2020-04-16 2024-10-08 Samsung Display Co., Ltd. Display device with a static electricity discharging circuit
US11769453B2 (en) 2021-12-29 2023-09-26 Samsung Display Co., Ltd. Electrostatic discharge circuit and display device including the same

Also Published As

Publication number Publication date
JP2013077816A (ja) 2013-04-25
US8698137B2 (en) 2014-04-15
US20130062607A1 (en) 2013-03-14
KR20130029342A (ko) 2013-03-22
JP6049964B2 (ja) 2016-12-21

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