KR101939662B1 - 전력 트랜지스터 게이트 드라이버 - Google Patents
전력 트랜지스터 게이트 드라이버 Download PDFInfo
- Publication number
- KR101939662B1 KR101939662B1 KR1020147001003A KR20147001003A KR101939662B1 KR 101939662 B1 KR101939662 B1 KR 101939662B1 KR 1020147001003 A KR1020147001003 A KR 1020147001003A KR 20147001003 A KR20147001003 A KR 20147001003A KR 101939662 B1 KR101939662 B1 KR 101939662B1
- Authority
- KR
- South Korea
- Prior art keywords
- voltage
- gate
- supply
- charge
- class
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
- H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
- H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/483—Converters with outputs that each can have more than two voltages levels
- H02M7/4837—Flying capacitor converters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
- H03F3/2171—Class D power amplifiers; Switching amplifiers with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
- H03F3/2173—Class D power amplifiers; Switching amplifiers of the bridge type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Electronic Switches (AREA)
- Power Conversion In General (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161496663P | 2011-06-14 | 2011-06-14 | |
| US61/496,663 | 2011-06-14 | ||
| PCT/EP2012/061161 WO2012171938A2 (en) | 2011-06-14 | 2012-06-13 | Power transistor gate driver |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20140040813A KR20140040813A (ko) | 2014-04-03 |
| KR101939662B1 true KR101939662B1 (ko) | 2019-01-18 |
Family
ID=46319114
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020147001003A Active KR101939662B1 (ko) | 2011-06-14 | 2012-06-13 | 전력 트랜지스터 게이트 드라이버 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9231583B2 (enExample) |
| EP (1) | EP2721733B1 (enExample) |
| JP (1) | JP6480184B2 (enExample) |
| KR (1) | KR101939662B1 (enExample) |
| CN (1) | CN103620954B (enExample) |
| WO (1) | WO2012171938A2 (enExample) |
Families Citing this family (66)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8723491B2 (en) | 2011-12-19 | 2014-05-13 | Arctic Sand Technologies, Inc. | Control of power converters with capacitive energy transfer |
| US9941813B2 (en) | 2013-03-14 | 2018-04-10 | Solaredge Technologies Ltd. | High frequency multi-level inverter |
| US8619445B1 (en) | 2013-03-15 | 2013-12-31 | Arctic Sand Technologies, Inc. | Protection of switched capacitor power converter |
| US9203299B2 (en) | 2013-03-15 | 2015-12-01 | Artic Sand Technologies, Inc. | Controller-driven reconfiguration of switched-capacitor power converter |
| US8724353B1 (en) | 2013-03-15 | 2014-05-13 | Arctic Sand Technologies, Inc. | Efficient gate drivers for switched capacitor converters |
| US9621021B2 (en) * | 2013-06-21 | 2017-04-11 | Microchip Technology Inc. | Auxiliary power supplies in parallel with a switch of a switching regulator |
| JP6138973B2 (ja) * | 2013-09-19 | 2017-05-31 | フィリップス ライティング ホールディング ビー ヴィ | 連続出力調整範囲を有するコンパクト電力変換装置 |
| JP6340191B2 (ja) * | 2013-11-29 | 2018-06-06 | 株式会社メガチップス | 電力増幅器 |
| US10096705B2 (en) | 2014-01-21 | 2018-10-09 | Infineon Technologies Austria Ag | Integrated high side gate driver structure and circuit for driving high side power transistors |
| KR20150093347A (ko) * | 2014-02-07 | 2015-08-18 | 삼성전기주식회사 | 저전압 트랜지스터를 이용한 고전압 드라이버 |
| US9046912B1 (en) | 2014-02-24 | 2015-06-02 | The Boeing Company | Thermally balanced parallel operation of transistors |
| JP2015171226A (ja) * | 2014-03-06 | 2015-09-28 | 三菱電機株式会社 | インバータ装置及び空気調和機 |
| US9318974B2 (en) * | 2014-03-26 | 2016-04-19 | Solaredge Technologies Ltd. | Multi-level inverter with flying capacitor topology |
| US9467140B2 (en) * | 2014-07-22 | 2016-10-11 | Honeywell International Inc. | Field-effect transistor driver |
| WO2016021092A1 (ja) * | 2014-08-04 | 2016-02-11 | 日本電気株式会社 | スイッチング増幅器および無線送信機 |
| US9419509B2 (en) * | 2014-08-11 | 2016-08-16 | Texas Instruments Incorporated | Shared bootstrap capacitor for multiple phase buck converter circuit and methods |
| US9571093B2 (en) | 2014-09-16 | 2017-02-14 | Navitas Semiconductor, Inc. | Half bridge driver circuits |
| US9647476B2 (en) | 2014-09-16 | 2017-05-09 | Navitas Semiconductor Inc. | Integrated bias supply, reference and bias current circuits for GaN devices |
| KR101912975B1 (ko) | 2014-10-30 | 2018-10-30 | 한국과학기술원 | 입사 파워 조절이 가능한 시분할 대역 확산코드 기반의 광분광학 시스템 및 그 제어 방법 |
| EP3231090B1 (en) | 2014-12-09 | 2019-04-24 | Infineon Technologies Austria AG | A regulated high side gate driver circuit for power transistors |
| KR102551525B1 (ko) * | 2014-12-30 | 2023-07-06 | 인피니언 테크놀로지스 오스트리아 아게 | 멀티-레벨 클래스 d 오디오 전력 증폭기들 |
| CN104779782B (zh) * | 2015-04-17 | 2017-06-20 | 华为技术有限公司 | 一种电压转换电路 |
| US9530765B1 (en) * | 2015-04-30 | 2016-12-27 | Silanna Asia Pte Ltd | Distributing capacitance with gate driver for power switch |
| US10020759B2 (en) | 2015-08-04 | 2018-07-10 | The Boeing Company | Parallel modular converter architecture for efficient ground electric vehicles |
| US9571038B1 (en) * | 2015-08-31 | 2017-02-14 | Nxp B.V. | Driver circuit for a power stage of a class-D amplifier |
| JP6634752B2 (ja) | 2015-09-16 | 2020-01-22 | 富士電機株式会社 | デバイス |
| US9954422B2 (en) * | 2016-03-30 | 2018-04-24 | Texas Instruments Incorporated | Integrated gate driver for motor control |
| JP6659427B2 (ja) * | 2016-03-31 | 2020-03-04 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| CN105827101B (zh) * | 2016-05-06 | 2019-02-05 | 成都芯源系统有限公司 | 电压转换集成电路、自举电路以及开关驱动方法 |
| TWI769160B (zh) * | 2016-06-03 | 2022-07-01 | 美商英特矽爾美國有限公司 | 用以軟啟動大功率電荷泵的方法、電路,及電子系統 |
| US10270440B2 (en) * | 2016-07-20 | 2019-04-23 | Semiconductor Components Industries, Llc | Output driver having pull-down capability |
| CN106374908B (zh) * | 2016-08-30 | 2019-03-19 | 无锡华润矽科微电子有限公司 | 阶跃电平输出电路 |
| US10255982B2 (en) * | 2016-11-02 | 2019-04-09 | Skyworks Solutions, Inc. | Accidental fuse programming protection circuits |
| US10360988B2 (en) | 2016-11-02 | 2019-07-23 | Skyworks Solutions, Inc. | Apparatus and methods for protection against inadvertent programming of fuse cells |
| WO2018197016A1 (en) | 2017-04-28 | 2018-11-01 | Advantest Corporation | Amplifier, circuit for trimming a bias voltage, method for amplifying an input signal and method for trimming a bias voltage |
| US10090763B1 (en) * | 2017-06-19 | 2018-10-02 | Dialog Semiconductor (Uk) Limited | Multi-level buck converter having a regulated flying capacitor voltage used for high-side drive |
| DE102017219551A1 (de) * | 2017-11-03 | 2019-05-09 | Continental Teves Ag & Co. Ohg | Verpolschutzanordnung, Verfahren zum Betrieb der Verpolschutzanordnung und korrespondierende Verwendung |
| CN108667327B (zh) * | 2018-05-03 | 2020-03-20 | 华为数字技术(苏州)有限公司 | 多电平逆变器 |
| US10425077B1 (en) | 2018-06-06 | 2019-09-24 | Analog Devices Global Unlimited Company | Transistor gate driver |
| TWI732280B (zh) * | 2018-08-28 | 2021-07-01 | 美商高效電源轉換公司 | 串級自舉式GaN功率開關及驅動器 |
| US10707840B2 (en) * | 2018-09-26 | 2020-07-07 | Infineon Technologies Ag | Power stage with sequential power transistor gate charging |
| WO2020196647A1 (ja) * | 2019-03-25 | 2020-10-01 | 株式会社Jvcケンウッド | 位相変調装置及び位相変調方法 |
| US10637355B1 (en) * | 2019-05-10 | 2020-04-28 | Nxp B.V. | Switched capacitor voltage converter and method for operating a switched capacitor voltage converter |
| US10811959B1 (en) * | 2019-05-10 | 2020-10-20 | Nxp B.V. | Switched capacitor voltage converter and method for operating a switched capacitor voltage converter |
| CN109981057A (zh) * | 2019-05-30 | 2019-07-05 | 南京固德芯科技有限公司 | GaN 功率放大器漏级电源调制芯片的调制方法 |
| US10707750B1 (en) * | 2019-07-05 | 2020-07-07 | Delta Electronics Int'l (Singapore) Pte Ltd | Charge-based charge pump with wide output voltage range |
| CN110535332B (zh) * | 2019-09-11 | 2020-07-28 | 上海南芯半导体科技有限公司 | 一种多相位电荷泵的驱动电路 |
| JP7199330B2 (ja) * | 2019-09-19 | 2023-01-05 | 株式会社東芝 | レギュレータ回路 |
| US11349470B2 (en) * | 2019-11-07 | 2022-05-31 | GM Global Technology Operations LLC | Gate driver and protection system for a solid-state switch |
| US11190181B2 (en) | 2020-01-20 | 2021-11-30 | Fast SiC Semiconductor Incorporated | Power transistor module and controlling method thereof |
| US11489521B2 (en) | 2020-01-20 | 2022-11-01 | Fast SiC Semiconductor Incorporated | Power transistor module and controlling method thereof |
| CN112234804B (zh) * | 2020-08-20 | 2022-08-05 | 上海艾为电子技术股份有限公司 | 驱动装置及其控制方法和电子设备 |
| US11121682B1 (en) * | 2020-09-04 | 2021-09-14 | Elite Semiconductor Microelectronics Technology Inc. | Single-stage boost class-D amplifier |
| US11482919B2 (en) * | 2020-10-28 | 2022-10-25 | Halo Microelectronics International | Gate drive apparatus and control method for switched capacitor converter |
| EP3993249A1 (en) * | 2020-10-28 | 2022-05-04 | NXP USA, Inc. | Advanced power supply to insure safe behavior of an inverter application |
| TWI819256B (zh) * | 2020-12-02 | 2023-10-21 | 瑞昱半導體股份有限公司 | 放大器裝置 |
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| US11906997B2 (en) * | 2021-05-14 | 2024-02-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Low-dropout (LDO) voltage regulator including amplifier and decoupling capacitor |
| CN113315351B (zh) * | 2021-05-21 | 2022-11-01 | 武汉大学 | 一种用于多电平拓扑的阵列自举驱动电路 |
| CN115411912A (zh) * | 2021-05-27 | 2022-11-29 | 恩智浦有限公司 | 开关电容变换器 |
| CN115548130A (zh) | 2021-06-30 | 2022-12-30 | 恩智浦有限公司 | Mis电容器及制造mis电容器的方法 |
| CN114825912A (zh) * | 2022-05-24 | 2022-07-29 | 无锡友达电子有限公司 | 具有超低压差的nmos管输出电路 |
| KR102697866B1 (ko) * | 2022-08-03 | 2024-08-22 | 울산과학기술원 | 모드 적응형 제어 고전압 생성기 및 자극 발생 장치 |
| TWI842175B (zh) * | 2022-11-02 | 2024-05-11 | 立錡科技股份有限公司 | 具有轉換率調整功能之半橋驅動器及半橋驅動方法 |
| CN116404853B (zh) * | 2023-06-07 | 2023-08-25 | 芯天下技术股份有限公司 | N型双h桥电机驱动芯片的高边驱动方法、装置和电路 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090195068A1 (en) | 2008-01-24 | 2009-08-06 | Hiromichi Ohashi | Power conversion apparatus |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19609121C1 (de) * | 1996-03-08 | 1997-02-27 | Siemens Ag | Schaltungsanordnung zum Ansteuern eines Feldeffekttransistors mit sourceseitiger Last |
| US5914589A (en) * | 1996-09-04 | 1999-06-22 | Stmicroelectronics, S.R.L. | Voltage boosting circuit for high-potential-side MOS switching transistor |
| EP1063772A1 (de) * | 1999-04-21 | 2000-12-27 | Infineon Technologies AG | Treiberschaltung zum Ansteuern einer Halbbrücke |
| JP2002158542A (ja) * | 2000-11-16 | 2002-05-31 | Sony Corp | 出力回路 |
| JP2002223132A (ja) * | 2001-01-29 | 2002-08-09 | Niigata Seimitsu Kk | 音声再生装置および方法 |
| JP2003051724A (ja) | 2001-08-08 | 2003-02-21 | Sony Corp | デジタルパワーアンプ及びデジタルアナログ変換器 |
| JP2005142983A (ja) * | 2003-11-10 | 2005-06-02 | Sony Corp | 電力増幅回路 |
| US6969967B2 (en) * | 2003-12-12 | 2005-11-29 | Ut-Battelle Llc | Multi-level dc bus inverter for providing sinusoidal and PWM electrical machine voltages |
| JP2006080024A (ja) * | 2004-09-13 | 2006-03-23 | Mitsubishi Electric Corp | 放電灯点灯装置 |
| CN101427298B (zh) * | 2006-05-24 | 2013-04-10 | 夏普株式会社 | 模拟输出电路和数据信号线驱动电路及显示装置、电位写入方法 |
| JP2008193717A (ja) * | 2008-03-17 | 2008-08-21 | Hitachi Ltd | 半導体装置の駆動方法および装置 |
| JP2010004093A (ja) * | 2008-06-18 | 2010-01-07 | Nec Electronics Corp | 出力駆動回路 |
| JP2010226334A (ja) * | 2009-03-23 | 2010-10-07 | Sanyo Electric Co Ltd | パルス幅変調増幅器 |
-
2012
- 2012-06-13 EP EP12728061.8A patent/EP2721733B1/en active Active
- 2012-06-13 KR KR1020147001003A patent/KR101939662B1/ko active Active
- 2012-06-13 JP JP2014515168A patent/JP6480184B2/ja active Active
- 2012-06-13 WO PCT/EP2012/061161 patent/WO2012171938A2/en not_active Ceased
- 2012-06-13 US US14/125,501 patent/US9231583B2/en active Active
- 2012-06-13 CN CN201280029645.7A patent/CN103620954B/zh active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090195068A1 (en) | 2008-01-24 | 2009-08-06 | Hiromichi Ohashi | Power conversion apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2014522612A (ja) | 2014-09-04 |
| EP2721733B1 (en) | 2019-02-20 |
| US9231583B2 (en) | 2016-01-05 |
| CN103620954A (zh) | 2014-03-05 |
| JP6480184B2 (ja) | 2019-03-06 |
| US20140300413A1 (en) | 2014-10-09 |
| EP2721733A2 (en) | 2014-04-23 |
| CN103620954B (zh) | 2017-02-15 |
| KR20140040813A (ko) | 2014-04-03 |
| WO2012171938A2 (en) | 2012-12-20 |
| WO2012171938A3 (en) | 2013-05-30 |
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