JP6480184B2 - パワートランジスタのゲートドライバ - Google Patents

パワートランジスタのゲートドライバ Download PDF

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Publication number
JP6480184B2
JP6480184B2 JP2014515168A JP2014515168A JP6480184B2 JP 6480184 B2 JP6480184 B2 JP 6480184B2 JP 2014515168 A JP2014515168 A JP 2014515168A JP 2014515168 A JP2014515168 A JP 2014515168A JP 6480184 B2 JP6480184 B2 JP 6480184B2
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Prior art keywords
voltage
gate
power transistor
class
charging
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Japanese (ja)
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JP2014522612A (ja
JP2014522612A5 (enExample
Inventor
ヘーイェルビュ ミケル
ヘーイェルビュ ミケル
クラー ヤコブセン イェールゲン
クラー ヤコブセン イェールゲン
Original Assignee
インフィネオン テクノロジーズ オーストリア アクチエンゲゼルシャフト
インフィネオン テクノロジーズ オーストリア アクチエンゲゼルシャフト
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Publication of JP2014522612A5 publication Critical patent/JP2014522612A5/ja
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/483—Converters with outputs that each can have more than two voltages levels
    • H02M7/4837—Flying capacitor converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2171—Class D power amplifiers; Switching amplifiers with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2173—Class D power amplifiers; Switching amplifiers of the bridge type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
JP2014515168A 2011-06-14 2012-06-13 パワートランジスタのゲートドライバ Active JP6480184B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161496663P 2011-06-14 2011-06-14
US61/496,663 2011-06-14
PCT/EP2012/061161 WO2012171938A2 (en) 2011-06-14 2012-06-13 Power transistor gate driver

Publications (3)

Publication Number Publication Date
JP2014522612A JP2014522612A (ja) 2014-09-04
JP2014522612A5 JP2014522612A5 (enExample) 2015-08-06
JP6480184B2 true JP6480184B2 (ja) 2019-03-06

Family

ID=46319114

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014515168A Active JP6480184B2 (ja) 2011-06-14 2012-06-13 パワートランジスタのゲートドライバ

Country Status (6)

Country Link
US (1) US9231583B2 (enExample)
EP (1) EP2721733B1 (enExample)
JP (1) JP6480184B2 (enExample)
KR (1) KR101939662B1 (enExample)
CN (1) CN103620954B (enExample)
WO (1) WO2012171938A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI718679B (zh) * 2019-07-05 2021-02-11 台達電子國際（新加坡）私人有限公司 具寬輸出電壓範圍的充電式電荷泵浦

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Also Published As

Publication number Publication date
JP2014522612A (ja) 2014-09-04
WO2012171938A2 (en) 2012-12-20
CN103620954A (zh) 2014-03-05
US20140300413A1 (en) 2014-10-09
WO2012171938A3 (en) 2013-05-30
KR20140040813A (ko) 2014-04-03
EP2721733A2 (en) 2014-04-23
CN103620954B (zh) 2017-02-15
KR101939662B1 (ko) 2019-01-18
US9231583B2 (en) 2016-01-05
EP2721733B1 (en) 2019-02-20

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