KR101825412B1 - 노즐 세정 장치, 노즐 세정 방법 및 기판 처리 장치 - Google Patents

노즐 세정 장치, 노즐 세정 방법 및 기판 처리 장치 Download PDF

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Publication number
KR101825412B1
KR101825412B1 KR1020130061508A KR20130061508A KR101825412B1 KR 101825412 B1 KR101825412 B1 KR 101825412B1 KR 1020130061508 A KR1020130061508 A KR 1020130061508A KR 20130061508 A KR20130061508 A KR 20130061508A KR 101825412 B1 KR101825412 B1 KR 101825412B1
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South Korea
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nozzle
storage tank
cleaning
gas
cleaning liquid
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Korean (ko)
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KR20130135125A (ko
Inventor
요시히로 가이
신야 이시카와
유지 카미카와
슈이치 나가미네
나오키 신도
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도쿄엘렉트론가부시키가이샤
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/102—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration with means for agitating the liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B15/00—Details of spraying plant or spraying apparatus not otherwise provided for; Accessories
    • B05B15/50—Arrangements for cleaning; Arrangements for preventing deposits, drying-out or blockage; Arrangements for detecting improper discharge caused by the presence of foreign matter
    • B05B15/55—Arrangements for cleaning; Arrangements for preventing deposits, drying-out or blockage; Arrangements for detecting improper discharge caused by the presence of foreign matter using cleaning fluids
    • B05B15/555—Arrangements for cleaning; Arrangements for preventing deposits, drying-out or blockage; Arrangements for detecting improper discharge caused by the presence of foreign matter using cleaning fluids discharged by cleaning nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B15/00—Details of spraying plant or spraying apparatus not otherwise provided for; Accessories
    • B05B15/50—Arrangements for cleaning; Arrangements for preventing deposits, drying-out or blockage; Arrangements for detecting improper discharge caused by the presence of foreign matter
    • B05B15/55—Arrangements for cleaning; Arrangements for preventing deposits, drying-out or blockage; Arrangements for detecting improper discharge caused by the presence of foreign matter using cleaning fluids
    • B05B15/557—Arrangements for cleaning; Arrangements for preventing deposits, drying-out or blockage; Arrangements for detecting improper discharge caused by the presence of foreign matter using cleaning fluids the cleaning fluid being a mixture of gas and liquid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
    • B08B9/02—Cleaning pipes or tubes or systems of pipes or tubes
    • B08B9/027—Cleaning the internal surfaces; Removal of blockages
    • B08B9/032—Cleaning the internal surfaces; Removal of blockages by the mechanical action of a moving fluid, e.g. by flushing
    • B08B9/0321—Cleaning the internal surfaces; Removal of blockages by the mechanical action of a moving fluid, e.g. by flushing using pressurised, pulsating or purging fluid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
    • B08B9/02—Cleaning pipes or tubes or systems of pipes or tubes
    • B08B9/027—Cleaning the internal surfaces; Removal of blockages
    • B08B9/032—Cleaning the internal surfaces; Removal of blockages by the mechanical action of a moving fluid, e.g. by flushing
    • B08B9/0321—Cleaning the internal surfaces; Removal of blockages by the mechanical action of a moving fluid, e.g. by flushing using pressurised, pulsating or purging fluid
    • B08B9/0328—Cleaning the internal surfaces; Removal of blockages by the mechanical action of a moving fluid, e.g. by flushing using pressurised, pulsating or purging fluid by purging the pipe with a gas or a mixture of gas and liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0416—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0441—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/36—Outlets for discharging by overflow

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Cleaning By Liquid Or Steam (AREA)
KR1020130061508A 2012-05-31 2013-05-30 노즐 세정 장치, 노즐 세정 방법 및 기판 처리 장치 Active KR101825412B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012125273A JP5965729B2 (ja) 2012-05-31 2012-05-31 ノズル洗浄装置、ノズル洗浄方法および基板処理装置
JPJP-P-2012-125273 2012-05-31

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020160107534A Division KR101891128B1 (ko) 2012-05-31 2016-08-24 기판 처리 장치 및 토출 기구 세정 방법

Publications (2)

Publication Number Publication Date
KR20130135125A KR20130135125A (ko) 2013-12-10
KR101825412B1 true KR101825412B1 (ko) 2018-02-06

Family

ID=49849809

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Application Number Title Priority Date Filing Date
KR1020130061508A Active KR101825412B1 (ko) 2012-05-31 2013-05-30 노즐 세정 장치, 노즐 세정 방법 및 기판 처리 장치
KR1020160107534A Active KR101891128B1 (ko) 2012-05-31 2016-08-24 기판 처리 장치 및 토출 기구 세정 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020160107534A Active KR101891128B1 (ko) 2012-05-31 2016-08-24 기판 처리 장치 및 토출 기구 세정 방법

Country Status (4)

Country Link
US (1) US10700166B2 (https=)
JP (1) JP5965729B2 (https=)
KR (2) KR101825412B1 (https=)
TW (1) TWI541079B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
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WO2021210969A1 (ko) * 2020-04-18 2021-10-21 엔비스아나(주) 스캔 시스템

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CN110060925B (zh) 2014-03-28 2023-02-17 株式会社斯库林集团 基板处理方法
JP6216289B2 (ja) * 2014-06-04 2017-10-18 東京エレクトロン株式会社 基板処理装置、ノズル洗浄方法およびノズル洗浄装置
JP6331961B2 (ja) * 2014-10-22 2018-05-30 東京エレクトロン株式会社 基板液処理装置
TWI661479B (zh) * 2015-02-12 2019-06-01 Screen Holdings Co,. Ltd. 基板處理裝置、基板處理系統以及基板處理方法
KR101885103B1 (ko) * 2015-11-05 2018-08-06 세메스 주식회사 분사 유닛 및 이를 포함하는 기판 처리 장치
JP6737436B2 (ja) 2015-11-10 2020-08-12 株式会社Ｓｃｒｅｅｎホールディングス 膜処理ユニットおよび基板処理装置
CN107221491B (zh) * 2016-03-22 2021-10-22 东京毅力科创株式会社 基板清洗装置
KR102491879B1 (ko) * 2016-04-18 2023-01-27 삼성디스플레이 주식회사 노즐 세정 장치 및 이를 포함하는 디스펜싱 장치
EP3318334A1 (en) 2016-11-04 2018-05-09 Solar-Semi GmbH Cleaning device for rinsing dispensing nozzles
CN108323161B (zh) * 2016-11-22 2021-06-04 水晶帽清洁器公司 用于清洁喷枪的改进装置
JP6924614B2 (ja) * 2017-05-18 2021-08-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
CN107946179B (zh) * 2017-11-27 2020-05-08 上海超硅半导体有限公司 一种形成有集成电路和多晶层的图形化晶圆的回收方法
CN108838160B (zh) * 2018-05-31 2021-07-27 武汉华星光电技术有限公司 浸槽及供液系统
CN112044862A (zh) * 2019-06-06 2020-12-08 中信戴卡股份有限公司 镜头保护装置及镜头保护方法
CN114247677A (zh) * 2020-09-24 2022-03-29 中国科学院微电子研究所 出胶喷嘴的清洗设备及清洗方法
KR102677969B1 (ko) 2020-12-30 2024-06-26 세메스 주식회사 노즐 대기 포트와 이를 포함하는 기판 처리 장치 및 이를 이용한 노즐 세정 방법
KR102635382B1 (ko) * 2020-12-31 2024-02-14 세메스 주식회사 기판 처리 장치 및 방법
KR102483378B1 (ko) * 2021-03-31 2022-12-30 엘에스이 주식회사 포켓형 노즐 세척장치
US11798800B2 (en) * 2021-06-25 2023-10-24 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for solvent recycling
KR20230099428A (ko) * 2021-12-27 2023-07-04 주식회사 제우스 유체 토출 노즐 세정 장치 및 유체 토출 노즐 세정 방법
KR102596506B1 (ko) * 2021-12-28 2023-11-02 세메스 주식회사 홈 포트 및 기판 처리 장치
JP7748318B2 (ja) 2022-03-24 2025-10-02 株式会社東芝 炭化珪素半導体装置
KR102591074B1 (ko) 2022-05-12 2023-10-19 에이펫(주) 반도체 기판 처리용 유체 공급 노즐 및 이를 포함하는 반도체 기판 처리 장치

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JP2000167469A (ja) * 1998-12-10 2000-06-20 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2007258462A (ja) * 2006-03-23 2007-10-04 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP2010062352A (ja) * 2008-09-04 2010-03-18 Tokyo Electron Ltd 液処理におけるノズル洗浄、処理液乾燥防止方法及びその装置

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JPH10258249A (ja) * 1997-03-19 1998-09-29 Dainippon Screen Mfg Co Ltd 回転式基板処理装置
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JP4982527B2 (ja) * 2009-06-08 2012-07-25 株式会社東芝 成膜装置及び成膜方法
KR101091080B1 (ko) * 2009-11-26 2011-12-09 세메스 주식회사 슬릿 노즐 세정 유닛 및 이를 갖는 포토레지스트 도포 장치

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Publication number Priority date Publication date Assignee Title
JP2000167469A (ja) * 1998-12-10 2000-06-20 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2007258462A (ja) * 2006-03-23 2007-10-04 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP2010062352A (ja) * 2008-09-04 2010-03-18 Tokyo Electron Ltd 液処理におけるノズル洗浄、処理液乾燥防止方法及びその装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021210969A1 (ko) * 2020-04-18 2021-10-21 엔비스아나(주) 스캔 시스템
KR20210128848A (ko) * 2020-04-18 2021-10-27 엔비스아나(주) 스캔 시스템
KR102349483B1 (ko) * 2020-04-18 2022-01-10 엔비스아나(주) 스캔 시스템

Also Published As

Publication number Publication date
JP2013251409A (ja) 2013-12-12
US10700166B2 (en) 2020-06-30
US20130319470A1 (en) 2013-12-05
KR20160104599A (ko) 2016-09-05
KR101891128B1 (ko) 2018-08-23
KR20130135125A (ko) 2013-12-10
TW201410338A (zh) 2014-03-16
TWI541079B (zh) 2016-07-11
JP5965729B2 (ja) 2016-08-10

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