KR101821926B1 - 진공 증착 장치 및 이를 사용한 디바이스 제조방법 - Google Patents

진공 증착 장치 및 이를 사용한 디바이스 제조방법 Download PDF

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Publication number
KR101821926B1
KR101821926B1 KR1020170068987A KR20170068987A KR101821926B1 KR 101821926 B1 KR101821926 B1 KR 101821926B1 KR 1020170068987 A KR1020170068987 A KR 1020170068987A KR 20170068987 A KR20170068987 A KR 20170068987A KR 101821926 B1 KR101821926 B1 KR 101821926B1
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KR
South Korea
Prior art keywords
vacuum chamber
evaporation source
surface constituting
vacuum
chamber
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KR1020170068987A
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English (en)
Korean (ko)
Inventor
켄 스미카와
다카오 호시노
Original Assignee
캐논 톡키 가부시키가이샤
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Priority to KR1020170068987A priority Critical patent/KR101821926B1/ko
Application granted granted Critical
Publication of KR101821926B1 publication Critical patent/KR101821926B1/ko
Priority to JP2018103138A priority patent/JP6454906B2/ja
Priority to CN201810553063.8A priority patent/CN108977771B/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • H01L51/001—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
KR1020170068987A 2017-06-02 2017-06-02 진공 증착 장치 및 이를 사용한 디바이스 제조방법 KR101821926B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020170068987A KR101821926B1 (ko) 2017-06-02 2017-06-02 진공 증착 장치 및 이를 사용한 디바이스 제조방법
JP2018103138A JP6454906B2 (ja) 2017-06-02 2018-05-30 真空蒸着装置及びそれを用いたデバイス製造方法
CN201810553063.8A CN108977771B (zh) 2017-06-02 2018-06-01 真空蒸镀装置及使用了该真空蒸镀装置的设备制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020170068987A KR101821926B1 (ko) 2017-06-02 2017-06-02 진공 증착 장치 및 이를 사용한 디바이스 제조방법

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020170156363A Division KR102014606B1 (ko) 2017-11-22 2017-11-22 진공 증착 장치 및 이를 사용한 디바이스 제조방법

Publications (1)

Publication Number Publication Date
KR101821926B1 true KR101821926B1 (ko) 2018-01-24

Family

ID=61029255

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020170068987A KR101821926B1 (ko) 2017-06-02 2017-06-02 진공 증착 장치 및 이를 사용한 디바이스 제조방법

Country Status (3)

Country Link
JP (1) JP6454906B2 (ja)
KR (1) KR101821926B1 (ja)
CN (1) CN108977771B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110643969A (zh) * 2018-06-27 2020-01-03 北京铂阳顶荣光伏科技有限公司 一种真空蒸镀设备

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7324593B2 (ja) 2019-03-05 2023-08-10 キヤノントッキ株式会社 真空チャンバ内へのユーティリティライン導入機構、成膜装置、成膜システム
CN110739285A (zh) * 2019-10-30 2020-01-31 北京工业大学 硅基金属中间层化合物半导体晶圆的结构及制备方法
JP2021095609A (ja) * 2019-12-18 2021-06-24 キヤノントッキ株式会社 成膜装置、成膜方法及び電子デバイスの製造方法
JP7177128B2 (ja) * 2020-09-30 2022-11-22 キヤノントッキ株式会社 成膜装置、検知装置、検知方法、及び電子デバイスの製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012054013A (ja) * 2010-08-31 2012-03-15 Hitachi High-Technologies Corp 有機ｅｌデバイス製造装置及び製造方法
KR101340615B1 (ko) 2011-12-26 2013-12-11 엘아이지에이디피 주식회사 화학기상 증착장치
KR101385587B1 (ko) 2012-01-02 2014-04-16 주식회사 에스에프에이 평면디스플레이용 화학 기상 증착장치

Family Cites Families (7)

* Cited by examiner, † Cited by third party
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JP2004269907A (ja) * 2003-03-05 2004-09-30 Jeol Ltd 真空蒸着装置
JP4446048B2 (ja) * 2003-07-11 2010-04-07 株式会社昭和真空 真空蒸着装置の蒸発源移動機構
JP4789551B2 (ja) * 2005-09-06 2011-10-12 株式会社半導体エネルギー研究所 有機ｅｌ成膜装置
KR100842183B1 (ko) * 2006-12-29 2008-06-30 두산메카텍 주식회사 증발원 스캐닝 장치
KR20090130559A (ko) * 2008-06-16 2009-12-24 삼성모바일디스플레이주식회사 이송 장치 및 이를 구비하는 유기물 증착 장치
US9055654B2 (en) * 2011-12-22 2015-06-09 Semiconductor Energy Laboratory Co., Ltd. Film formation apparatus and film formation method
CN204474753U (zh) * 2015-02-10 2015-07-15 光驰科技(上海)有限公司 用于真空系统运动机构的锁紧机构

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012054013A (ja) * 2010-08-31 2012-03-15 Hitachi High-Technologies Corp 有機ｅｌデバイス製造装置及び製造方法
KR101340615B1 (ko) 2011-12-26 2013-12-11 엘아이지에이디피 주식회사 화학기상 증착장치
KR101385587B1 (ko) 2012-01-02 2014-04-16 주식회사 에스에프에이 평면디스플레이용 화학 기상 증착장치

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110643969A (zh) * 2018-06-27 2020-01-03 北京铂阳顶荣光伏科技有限公司 一种真空蒸镀设备

Also Published As

Publication number Publication date
CN108977771A (zh) 2018-12-11
JP6454906B2 (ja) 2019-01-23
CN108977771B (zh) 2021-06-01
JP2018204106A (ja) 2018-12-27

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