KR101678248B1 - 액 처리 방법, 액 처리 장치 및 기억 매체 - Google Patents

액 처리 방법, 액 처리 장치 및 기억 매체 Download PDF

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KR101678248B1
KR101678248B1 KR1020120038520A KR20120038520A KR101678248B1 KR 101678248 B1 KR101678248 B1 KR 101678248B1 KR 1020120038520 A KR1020120038520 A KR 1020120038520A KR 20120038520 A KR20120038520 A KR 20120038520A KR 101678248 B1 KR101678248 B1 KR 101678248B1
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liquid
chemical liquid
diw
substrate
organic solvent
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KR20120117678A (ko
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겐지 세키구치
야스시 후지이
데츠야 사카자키
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias

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  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020120038520A 2011-04-15 2012-04-13 액 처리 방법, 액 처리 장치 및 기억 매체 Active KR101678248B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2011091295 2011-04-15
JPJP-P-2011-091295 2011-04-15
JP2011277159A JP5813495B2 (ja) 2011-04-15 2011-12-19 液処理方法、液処理装置および記憶媒体
JPJP-P-2011-277159 2011-12-19

Publications (2)

Publication Number Publication Date
KR20120117678A KR20120117678A (ko) 2012-10-24
KR101678248B1 true KR101678248B1 (ko) 2016-11-21

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KR1020120038520A Active KR101678248B1 (ko) 2011-04-15 2012-04-13 액 처리 방법, 액 처리 장치 및 기억 매체

Country Status (4)

Country Link
US (1) US9111967B2 (https=)
JP (1) JP5813495B2 (https=)
KR (1) KR101678248B1 (https=)
TW (1) TWI524453B (https=)

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JP5783971B2 (ja) * 2012-08-10 2015-09-24 株式会社東芝 塗布装置および塗布方法
US9870933B2 (en) * 2013-02-08 2018-01-16 Lam Research Ag Process and apparatus for treating surfaces of wafer-shaped articles
KR20150000548A (ko) * 2013-06-24 2015-01-05 삼성전자주식회사 기판 처리 장치
JP6308910B2 (ja) * 2013-11-13 2018-04-11 東京エレクトロン株式会社 基板洗浄方法、基板洗浄システムおよび記憶媒体
TWI539515B (zh) * 2013-11-13 2016-06-21 弘塑科技股份有限公司 晶片堆疊結構之洗淨方法及洗淨設備
CN104979236B (zh) * 2014-04-11 2017-09-26 沈阳芯源微电子设备有限公司 一种化学液供给装置及其供给方法
KR102347975B1 (ko) * 2014-07-14 2022-01-07 세메스 주식회사 기판 처리 장치 및 방법
JP6449097B2 (ja) 2014-07-24 2019-01-09 東京エレクトロン株式会社 基板処理方法及び基板処理装置並びに基板処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体
JP6440111B2 (ja) * 2014-08-14 2018-12-19 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
CN105047529A (zh) * 2015-05-28 2015-11-11 上海集成电路研发中心有限公司 改善小尺寸高深宽比结构的湿法工艺润湿性的方法
KR101736871B1 (ko) * 2015-05-29 2017-05-18 세메스 주식회사 기판 처리 장치 및 방법
JP6552931B2 (ja) * 2015-09-18 2019-07-31 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP2017157800A (ja) * 2016-03-04 2017-09-07 東京エレクトロン株式会社 液処理方法、基板処理装置、及び記憶媒体
JP6623943B2 (ja) 2016-06-14 2019-12-25 東京エレクトロン株式会社 半導体装置の製造方法、熱処理装置及び記憶媒体。
EP3282474B1 (en) * 2016-08-11 2021-08-04 IMEC vzw Method for performing a wet treatment of a substrate
WO2018037691A1 (ja) * 2016-08-22 2018-03-01 東京エレクトロン株式会社 塗布方法、塗布装置及び記憶媒体
JP6979826B2 (ja) * 2017-08-04 2021-12-15 東京エレクトロン株式会社 基板処理方法および基板処理装置
KR102029127B1 (ko) * 2019-02-08 2019-10-07 영창케미칼 주식회사 반도체 제조 공정에 있어서 실리콘 또는 실리콘 화합물 패턴을 형성하기 위한 신규 방법
JP7250566B2 (ja) * 2019-02-26 2023-04-03 東京エレクトロン株式会社 基板処理装置および基板処理方法
TW202105495A (zh) * 2019-05-23 2021-02-01 日商東京威力科創股份有限公司 基板處理方法
JP7419896B2 (ja) * 2020-03-16 2024-01-23 栗田工業株式会社 ウエハの洗浄方法
JP7580217B2 (ja) 2020-07-27 2024-11-11 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法、基板処理装置、および、処理液
JP7513454B2 (ja) 2020-07-27 2024-07-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP7546399B2 (ja) * 2020-07-27 2024-09-06 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法、基板処理装置および処理液
CN112185857A (zh) * 2020-09-29 2021-01-05 王健 一种晶圆电镀前处理用摇摆喷淋工艺
KR102597005B1 (ko) * 2020-12-29 2023-11-02 세메스 주식회사 기판 처리 방법
JP7592500B2 (ja) * 2021-01-18 2024-12-02 東京エレクトロン株式会社 基板処理方法および基板処理装置
US11925963B2 (en) 2022-05-27 2024-03-12 Semes Co., Ltd. Method for treating a substrate
US12103052B2 (en) * 2022-06-14 2024-10-01 Tokyo Electron Limited Method and single wafer processing system for processing of semiconductor wafers
CN118073176B (zh) * 2024-04-25 2024-07-09 合肥新晶集成电路有限公司 晶圆清洗方法和晶圆清洗机

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JP2009302433A (ja) 2008-06-17 2009-12-24 Tokyo Electron Ltd 現像処理方法及び現像処理装置

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JP3185753B2 (ja) * 1998-05-22 2001-07-11 日本電気株式会社 半導体装置の製造方法
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Publication number Publication date
KR20120117678A (ko) 2012-10-24
JP5813495B2 (ja) 2015-11-17
US20120260949A1 (en) 2012-10-18
TW201306151A (zh) 2013-02-01
US9111967B2 (en) 2015-08-18
TWI524453B (zh) 2016-03-01
JP2012231116A (ja) 2012-11-22

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