KR101672076B1 - 웨이퍼의 면취 가공 방법, 웨이퍼의 면취 가공 장치 및 숫돌 각도 조정용 지그 - Google Patents

웨이퍼의 면취 가공 방법, 웨이퍼의 면취 가공 장치 및 숫돌 각도 조정용 지그 Download PDF

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KR101672076B1
KR101672076B1 KR1020130094874A KR20130094874A KR101672076B1 KR 101672076 B1 KR101672076 B1 KR 101672076B1 KR 1020130094874 A KR1020130094874 A KR 1020130094874A KR 20130094874 A KR20130094874 A KR 20130094874A KR 101672076 B1 KR101672076 B1 KR 101672076B1
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South Korea
Prior art keywords
wafer
grindstones
disk
cup
grooved
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KR1020130094874A
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English (en)
Korean (ko)
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KR20140021975A (ko
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이치로 가타야마
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다이토 일렉트론 가부시키가이샤
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Publication of KR20140021975A publication Critical patent/KR20140021975A/ko
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00Component parts such as frames, beds, carriages, headstocks

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
KR1020130094874A 2012-08-13 2013-08-09 웨이퍼의 면취 가공 방법, 웨이퍼의 면취 가공 장치 및 숫돌 각도 조정용 지그 KR101672076B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2012-179315 2012-08-13
JP2012179315A JP5988765B2 (ja) 2012-08-13 2012-08-13 ウェーハの面取り加工方法、ウェーハの面取り加工装置および砥石角度調整用治具

Publications (2)

Publication Number Publication Date
KR20140021975A KR20140021975A (ko) 2014-02-21
KR101672076B1 true KR101672076B1 (ko) 2016-11-02

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KR1020130094874A KR101672076B1 (ko) 2012-08-13 2013-08-09 웨이퍼의 면취 가공 방법, 웨이퍼의 면취 가공 장치 및 숫돌 각도 조정용 지그

Country Status (4)

Country Link
JP (1) JP5988765B2 (ja)
KR (1) KR101672076B1 (ja)
CN (1) CN103586751B (ja)
TW (1) TWI600496B (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6045542B2 (ja) * 2014-09-11 2016-12-14 信越半導体株式会社 半導体ウェーハの加工方法、貼り合わせウェーハの製造方法、及びエピタキシャルウェーハの製造方法
CN105881136A (zh) * 2016-05-26 2016-08-24 浙江新工机械制造有限公司 一种小型倒角抛光机
CN106181681A (zh) * 2016-08-31 2016-12-07 天通银厦新材料有限公司 一种蓝宝石加工用精确打磨装置
JP6825518B2 (ja) * 2017-08-24 2021-02-03 三菱マテリアル株式会社 プラズマ処理装置用炭化珪素電極板及びその製造方法
CN111347061B (zh) * 2018-12-24 2021-03-30 有研半导体材料有限公司 一种硅环加工的工艺方法
CN110026889B (zh) * 2019-04-28 2021-04-20 上海新昇半导体科技有限公司 固定连接部件、研磨头组件及抛光设备
CN110265192B (zh) * 2019-07-29 2024-04-05 湖州师范学院 厚度可调双套滚轮漆包扁线导体成形装置
CN111618707A (zh) * 2020-05-20 2020-09-04 清华大学 晶圆磨削方法及晶圆磨削系统
KR102358687B1 (ko) * 2020-10-13 2022-02-08 (주)미래컴퍼니 웨이퍼 가공 방법 및 시스템
JP7093875B2 (ja) 2021-06-24 2022-06-30 一郎 片山 ワーク加工装置、砥石、およびワーク加工方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006021291A (ja) * 2004-07-09 2006-01-26 Tokyo Seimitsu Co Ltd 研削砥石、研削装置、及び研削方法
JP2007030119A (ja) * 2005-07-28 2007-02-08 Tokyo Seimitsu Co Ltd ウェーハ面取り装置及びウェーハ面取り方法
JP2008177348A (ja) * 2007-01-18 2008-07-31 M Tec Kk ウェーハ面取り加工方法およびその装置
JP2012051098A (ja) 2010-02-26 2012-03-15 Nakamura Tome Precision Ind Co Ltd 円板状ワークの外周加工装置

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JPH06262505A (ja) 1993-03-11 1994-09-20 Daito Shoji Kk 面取り砥石車及びそれを用いた面取り加工装置
JPH11207584A (ja) 1998-01-27 1999-08-03 M Tec Kk ワーク外周面の研削方法及び装置
JP4008586B2 (ja) 1998-08-09 2007-11-14 エムテック株式会社 ワークのエッジの研摩装置
JP2000218482A (ja) * 1999-01-28 2000-08-08 Daido Steel Co Ltd 枚葉式端面研磨機
CN2803621Y (zh) * 2005-05-27 2006-08-09 戚道易 旋转磨头的角度调整装置
WO2008106221A1 (en) * 2007-02-28 2008-09-04 Applied Materials, Inc. Methods and apparatus for cleaning a substrate edge using chemical and mechanical polishing
JP2011194561A (ja) * 2010-02-26 2011-10-06 Nakamura Tome Precision Ind Co Ltd 円盤状ワークの面取装置
KR101089480B1 (ko) * 2010-06-01 2011-12-07 주식회사 엘지실트론 웨이퍼 연마장치
CN102198637B (zh) * 2011-04-25 2012-12-26 广州市敏嘉制造技术有限公司 数控磨床砂轮角度调整机构
JP5991728B2 (ja) * 2011-09-30 2016-09-14 Hoya株式会社 磁気ディスク用ガラス基板の製造方法及び磁気ディスクの製造方法
JP5524995B2 (ja) * 2012-03-27 2014-06-18 ダイトエレクトロン株式会社 ウェーハのエッジの加工方法および加工装置
CN102601691B (zh) * 2012-04-06 2013-12-25 大连理工大学 一种圆锥面磨削方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006021291A (ja) * 2004-07-09 2006-01-26 Tokyo Seimitsu Co Ltd 研削砥石、研削装置、及び研削方法
JP2007030119A (ja) * 2005-07-28 2007-02-08 Tokyo Seimitsu Co Ltd ウェーハ面取り装置及びウェーハ面取り方法
JP2008177348A (ja) * 2007-01-18 2008-07-31 M Tec Kk ウェーハ面取り加工方法およびその装置
JP2012051098A (ja) 2010-02-26 2012-03-15 Nakamura Tome Precision Ind Co Ltd 円板状ワークの外周加工装置

Also Published As

Publication number Publication date
CN103586751A (zh) 2014-02-19
CN103586751B (zh) 2017-08-25
JP2014037014A (ja) 2014-02-27
TW201406495A (zh) 2014-02-16
JP5988765B2 (ja) 2016-09-07
KR20140021975A (ko) 2014-02-21
TWI600496B (zh) 2017-10-01

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