KR101672076B1 - 웨이퍼의 면취 가공 방법, 웨이퍼의 면취 가공 장치 및 숫돌 각도 조정용 지그 - Google Patents
웨이퍼의 면취 가공 방법, 웨이퍼의 면취 가공 장치 및 숫돌 각도 조정용 지그 Download PDFInfo
- Publication number
- KR101672076B1 KR101672076B1 KR1020130094874A KR20130094874A KR101672076B1 KR 101672076 B1 KR101672076 B1 KR 101672076B1 KR 1020130094874 A KR1020130094874 A KR 1020130094874A KR 20130094874 A KR20130094874 A KR 20130094874A KR 101672076 B1 KR101672076 B1 KR 101672076B1
- Authority
- KR
- South Korea
- Prior art keywords
- wafer
- grindstones
- disk
- cup
- grooved
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 41
- 235000012431 wafers Nutrition 0.000 claims description 326
- 238000003754 machining Methods 0.000 claims description 46
- 230000002093 peripheral effect Effects 0.000 claims description 15
- 238000003672 processing method Methods 0.000 claims description 2
- 230000001965 increasing effect Effects 0.000 abstract description 23
- 238000007493 shaping process Methods 0.000 abstract description 10
- 238000005498 polishing Methods 0.000 abstract description 7
- 238000004904 shortening Methods 0.000 abstract description 2
- 238000005299 abrasion Methods 0.000 description 20
- 230000003028 elevating effect Effects 0.000 description 17
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 10
- 238000010586 diagram Methods 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- NCGICGYLBXGBGN-UHFFFAOYSA-N 3-morpholin-4-yl-1-oxa-3-azonia-2-azanidacyclopent-3-en-5-imine;hydrochloride Chemical compound Cl.[N-]1OC(=N)C=[N+]1N1CCOCC1 NCGICGYLBXGBGN-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 241000251468 Actinopterygii Species 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 210000005182 tip of the tongue Anatomy 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2012-179315 | 2012-08-13 | ||
JP2012179315A JP5988765B2 (ja) | 2012-08-13 | 2012-08-13 | ウェーハの面取り加工方法、ウェーハの面取り加工装置および砥石角度調整用治具 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20140021975A KR20140021975A (ko) | 2014-02-21 |
KR101672076B1 true KR101672076B1 (ko) | 2016-11-02 |
Family
ID=50077180
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020130094874A KR101672076B1 (ko) | 2012-08-13 | 2013-08-09 | 웨이퍼의 면취 가공 방법, 웨이퍼의 면취 가공 장치 및 숫돌 각도 조정용 지그 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5988765B2 (ja) |
KR (1) | KR101672076B1 (ja) |
CN (1) | CN103586751B (ja) |
TW (1) | TWI600496B (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6045542B2 (ja) * | 2014-09-11 | 2016-12-14 | 信越半導体株式会社 | 半導体ウェーハの加工方法、貼り合わせウェーハの製造方法、及びエピタキシャルウェーハの製造方法 |
CN105881136A (zh) * | 2016-05-26 | 2016-08-24 | 浙江新工机械制造有限公司 | 一种小型倒角抛光机 |
CN106181681A (zh) * | 2016-08-31 | 2016-12-07 | 天通银厦新材料有限公司 | 一种蓝宝石加工用精确打磨装置 |
JP6825518B2 (ja) * | 2017-08-24 | 2021-02-03 | 三菱マテリアル株式会社 | プラズマ処理装置用炭化珪素電極板及びその製造方法 |
CN111347061B (zh) * | 2018-12-24 | 2021-03-30 | 有研半导体材料有限公司 | 一种硅环加工的工艺方法 |
CN110026889B (zh) * | 2019-04-28 | 2021-04-20 | 上海新昇半导体科技有限公司 | 固定连接部件、研磨头组件及抛光设备 |
CN110265192B (zh) * | 2019-07-29 | 2024-04-05 | 湖州师范学院 | 厚度可调双套滚轮漆包扁线导体成形装置 |
CN111618707A (zh) * | 2020-05-20 | 2020-09-04 | 清华大学 | 晶圆磨削方法及晶圆磨削系统 |
KR102358687B1 (ko) * | 2020-10-13 | 2022-02-08 | (주)미래컴퍼니 | 웨이퍼 가공 방법 및 시스템 |
JP7093875B2 (ja) | 2021-06-24 | 2022-06-30 | 一郎 片山 | ワーク加工装置、砥石、およびワーク加工方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2006021291A (ja) * | 2004-07-09 | 2006-01-26 | Tokyo Seimitsu Co Ltd | 研削砥石、研削装置、及び研削方法 |
JP2007030119A (ja) * | 2005-07-28 | 2007-02-08 | Tokyo Seimitsu Co Ltd | ウェーハ面取り装置及びウェーハ面取り方法 |
JP2008177348A (ja) * | 2007-01-18 | 2008-07-31 | M Tec Kk | ウェーハ面取り加工方法およびその装置 |
JP2012051098A (ja) | 2010-02-26 | 2012-03-15 | Nakamura Tome Precision Ind Co Ltd | 円板状ワークの外周加工装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06262505A (ja) | 1993-03-11 | 1994-09-20 | Daito Shoji Kk | 面取り砥石車及びそれを用いた面取り加工装置 |
JPH11207584A (ja) | 1998-01-27 | 1999-08-03 | M Tec Kk | ワーク外周面の研削方法及び装置 |
JP4008586B2 (ja) | 1998-08-09 | 2007-11-14 | エムテック株式会社 | ワークのエッジの研摩装置 |
JP2000218482A (ja) * | 1999-01-28 | 2000-08-08 | Daido Steel Co Ltd | 枚葉式端面研磨機 |
CN2803621Y (zh) * | 2005-05-27 | 2006-08-09 | 戚道易 | 旋转磨头的角度调整装置 |
WO2008106221A1 (en) * | 2007-02-28 | 2008-09-04 | Applied Materials, Inc. | Methods and apparatus for cleaning a substrate edge using chemical and mechanical polishing |
JP2011194561A (ja) * | 2010-02-26 | 2011-10-06 | Nakamura Tome Precision Ind Co Ltd | 円盤状ワークの面取装置 |
KR101089480B1 (ko) * | 2010-06-01 | 2011-12-07 | 주식회사 엘지실트론 | 웨이퍼 연마장치 |
CN102198637B (zh) * | 2011-04-25 | 2012-12-26 | 广州市敏嘉制造技术有限公司 | 数控磨床砂轮角度调整机构 |
JP5991728B2 (ja) * | 2011-09-30 | 2016-09-14 | Hoya株式会社 | 磁気ディスク用ガラス基板の製造方法及び磁気ディスクの製造方法 |
JP5524995B2 (ja) * | 2012-03-27 | 2014-06-18 | ダイトエレクトロン株式会社 | ウェーハのエッジの加工方法および加工装置 |
CN102601691B (zh) * | 2012-04-06 | 2013-12-25 | 大连理工大学 | 一种圆锥面磨削方法 |
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2012
- 2012-08-13 JP JP2012179315A patent/JP5988765B2/ja active Active
-
2013
- 2013-06-14 TW TW102121065A patent/TWI600496B/zh active
- 2013-07-16 CN CN201310302643.7A patent/CN103586751B/zh active Active
- 2013-08-09 KR KR1020130094874A patent/KR101672076B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006021291A (ja) * | 2004-07-09 | 2006-01-26 | Tokyo Seimitsu Co Ltd | 研削砥石、研削装置、及び研削方法 |
JP2007030119A (ja) * | 2005-07-28 | 2007-02-08 | Tokyo Seimitsu Co Ltd | ウェーハ面取り装置及びウェーハ面取り方法 |
JP2008177348A (ja) * | 2007-01-18 | 2008-07-31 | M Tec Kk | ウェーハ面取り加工方法およびその装置 |
JP2012051098A (ja) | 2010-02-26 | 2012-03-15 | Nakamura Tome Precision Ind Co Ltd | 円板状ワークの外周加工装置 |
Also Published As
Publication number | Publication date |
---|---|
CN103586751A (zh) | 2014-02-19 |
CN103586751B (zh) | 2017-08-25 |
JP2014037014A (ja) | 2014-02-27 |
TW201406495A (zh) | 2014-02-16 |
JP5988765B2 (ja) | 2016-09-07 |
KR20140021975A (ko) | 2014-02-21 |
TWI600496B (zh) | 2017-10-01 |
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