KR101615497B1 - 발광소자 패키지 및 그 제조방법 - Google Patents

발광소자 패키지 및 그 제조방법 Download PDF

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KR101615497B1
KR101615497B1 KR1020090115559A KR20090115559A KR101615497B1 KR 101615497 B1 KR101615497 B1 KR 101615497B1 KR 1020090115559 A KR1020090115559 A KR 1020090115559A KR 20090115559 A KR20090115559 A KR 20090115559A KR 101615497 B1 KR101615497 B1 KR 101615497B1
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South Korea
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led chip
molding
main body
emitting device
light emitting
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KR1020090115559A
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Korean (ko)
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KR20110058987A (ko
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박영삼
함헌주
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삼성전자주식회사
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Priority to KR1020090115559A priority Critical patent/KR101615497B1/ko
Priority to JP2010252964A priority patent/JP2011114341A/ja
Priority to US12/944,401 priority patent/US8680585B2/en
Publication of KR20110058987A publication Critical patent/KR20110058987A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01515—Forming coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Led Device Packages (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
KR1020090115559A 2009-11-27 2009-11-27 발광소자 패키지 및 그 제조방법 Active KR101615497B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020090115559A KR101615497B1 (ko) 2009-11-27 2009-11-27 발광소자 패키지 및 그 제조방법
JP2010252964A JP2011114341A (ja) 2009-11-27 2010-11-11 発光素子パッケージ及びその製造方法
US12/944,401 US8680585B2 (en) 2009-11-27 2010-11-11 Light emitting diode package and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020090115559A KR101615497B1 (ko) 2009-11-27 2009-11-27 발광소자 패키지 및 그 제조방법

Publications (2)

Publication Number Publication Date
KR20110058987A KR20110058987A (ko) 2011-06-02
KR101615497B1 true KR101615497B1 (ko) 2016-04-27

Family

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Family Applications (1)

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KR1020090115559A Active KR101615497B1 (ko) 2009-11-27 2009-11-27 발광소자 패키지 및 그 제조방법

Country Status (3)

Country Link
US (1) US8680585B2 (enExample)
JP (1) JP2011114341A (enExample)
KR (1) KR101615497B1 (enExample)

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EP2815437B1 (en) * 2012-02-16 2019-08-14 Citizen Electronics Co., Ltd. Light-emitting diode and method of manufacturing a light-emitting diode
KR102242660B1 (ko) * 2013-09-11 2021-04-21 엘지디스플레이 주식회사 발광 다이오드 소자 및 이를 포함하는 백라이트 유닛과 이의 제조 방법
KR101488454B1 (ko) * 2013-09-16 2015-01-30 서울반도체 주식회사 Ｌｅｄ 패키지 및 그 제조방법
CN106067506B (zh) * 2015-04-22 2018-06-29 株式会社流明斯 发光器件封装、背光单元及发光装置的制造方法
KR102374529B1 (ko) * 2015-05-29 2022-03-17 엘지디스플레이 주식회사 발광 다이오드 패키지와 그의 제조 방법, 이를 이용한 백라이트 유닛과 액정 표시 장치
KR101763893B1 (ko) * 2015-06-03 2017-08-01 주식회사 굿엘이디 광원 유닛 및 이의 제조 방법
KR101665102B1 (ko) 2015-06-10 2016-10-12 주식회사 레다즈 발광소자 패키지 및 그의 제조방법
US10008648B2 (en) 2015-10-08 2018-06-26 Semicon Light Co., Ltd. Semiconductor light emitting device
KR102426861B1 (ko) * 2015-12-02 2022-07-29 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 패키지
TWI608636B (zh) * 2016-01-28 2017-12-11 行家光電股份有限公司 具非對稱性光形的發光裝置及其製造方法
EP3200248B1 (en) 2016-01-28 2020-09-30 Maven Optronics Co., Ltd. Light emitting device with asymmetrical radiation pattern and manufacturing method of the same
KR102116988B1 (ko) 2016-08-11 2020-06-01 삼성전자 주식회사 광원 모듈, 이의 제조 방법, 및 이를 포함하는 백라이트 유닛
KR101865786B1 (ko) * 2016-11-09 2018-06-11 주식회사 세미콘라이트 반도체 발광소자 및 이의 제조 방법
KR101863538B1 (ko) * 2017-04-19 2018-06-04 주식회사 세미콘라이트 반도체 발광소자 및 이의 제조 방법
KR101877241B1 (ko) * 2017-06-29 2018-07-11 주식회사 세미콘라이트 반도체 발광소자
KR20190074233A (ko) * 2017-12-19 2019-06-27 서울반도체 주식회사 발광 소자 및 이를 포함하는 발광 모듈
JP6848997B2 (ja) * 2018-04-11 2021-03-24 日亜化学工業株式会社 発光装置
KR20200019514A (ko) * 2018-08-14 2020-02-24 서울반도체 주식회사 발광 다이오드 패키지 및 발광 다이오드 패키지를 포함하는 디스플레이 장치
JP6993589B2 (ja) * 2019-12-11 2022-02-04 日亜化学工業株式会社 発光装置及び発光装置を用いた面発光装置
JP7534626B2 (ja) 2020-12-17 2024-08-15 日亜化学工業株式会社 発光装置及び面状光源

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KR20080049732A (ko) * 2005-09-20 2008-06-04 가부시끼가이샤 르네사스 테크놀로지 Ｌｅｄ 광원 및 그 제조 방법
JP2008135709A (ja) * 2006-10-31 2008-06-12 Sharp Corp 発光装置、画像表示装置、およびその製造方法
KR20090047306A (ko) * 2007-11-07 2009-05-12 삼성전기주식회사 발광다이오드 패키지
WO2009093498A1 (ja) * 2008-01-22 2009-07-30 Alps Electric Co., Ltd. Ｌｅｄパッケージおよびその製造方法
JP2013005709A (ja) * 2011-06-20 2013-01-07 Hiromichi Kinoshita バッテリー大型発電システム

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KR100586965B1 (ko) * 2004-05-27 2006-06-08 삼성전기주식회사 발광 다이오드 소자
KR100586968B1 (ko) * 2004-05-28 2006-06-08 삼성전기주식회사 Ｌｅｄ 패키지 및 이를 구비한 액정표시장치용 백라이트어셈블리
KR100576866B1 (ko) * 2004-06-16 2006-05-10 삼성전기주식회사 발광다이오드 및 그 제조방법
US7352011B2 (en) 2004-11-15 2008-04-01 Philips Lumileds Lighting Company, Llc Wide emitting lens for LED useful for backlighting
KR100631901B1 (ko) * 2005-01-31 2006-10-11 삼성전기주식회사 Ｌｅｄ 패키지 프레임 및 이를 채용하는 ｌｅｄ 패키지
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JP2008135709A (ja) * 2006-10-31 2008-06-12 Sharp Corp 発光装置、画像表示装置、およびその製造方法
KR20090047306A (ko) * 2007-11-07 2009-05-12 삼성전기주식회사 발광다이오드 패키지
WO2009093498A1 (ja) * 2008-01-22 2009-07-30 Alps Electric Co., Ltd. Ｌｅｄパッケージおよびその製造方法
JP2013005709A (ja) * 2011-06-20 2013-01-07 Hiromichi Kinoshita バッテリー大型発電システム

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US20110127558A1 (en) 2011-06-02
KR20110058987A (ko) 2011-06-02
JP2011114341A (ja) 2011-06-09
US8680585B2 (en) 2014-03-25

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