KR101590661B1 - 액처리 장치, 액처리 방법 및 기억 매체 - Google Patents

액처리 장치, 액처리 방법 및 기억 매체 Download PDF

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Publication number
KR101590661B1
KR101590661B1 KR1020110070476A KR20110070476A KR101590661B1 KR 101590661 B1 KR101590661 B1 KR 101590661B1 KR 1020110070476 A KR1020110070476 A KR 1020110070476A KR 20110070476 A KR20110070476 A KR 20110070476A KR 101590661 B1 KR101590661 B1 KR 101590661B1
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South Korea
Prior art keywords
substrate
cover member
lamp heater
chemical liquid
wafer
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Korean (ko)
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KR20120028212A (ko
Inventor
지로 히가시지마
요시후미 아마노
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
    • H10P70/54—Cleaning of wafer edges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
KR1020110070476A 2010-09-13 2011-07-15 액처리 장치, 액처리 방법 및 기억 매체 Active KR101590661B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2010-204767 2010-09-13
JP2010204767 2010-09-13

Publications (2)

Publication Number Publication Date
KR20120028212A KR20120028212A (ko) 2012-03-22
KR101590661B1 true KR101590661B1 (ko) 2016-02-01

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Country Status (4)

Country Link
US (1) US8887741B2 (https=)
JP (1) JP5668650B2 (https=)
KR (1) KR101590661B1 (https=)
TW (1) TWI483333B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20250008995A (ko) * 2019-04-16 2025-01-16 도쿄엘렉트론가부시키가이샤 기판 처리 장치

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5854668B2 (ja) * 2011-07-07 2016-02-09 芝浦メカトロニクス株式会社 気液混合流体生成装置、気液混合流体生成方法、処理装置及び処理方法
JP5996329B2 (ja) * 2012-08-20 2016-09-21 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、および基板処理方法
TWI576938B (zh) 2012-08-17 2017-04-01 斯克林集團公司 基板處理裝置及基板處理方法
JP6100487B2 (ja) * 2012-08-20 2017-03-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6017262B2 (ja) 2012-10-25 2016-10-26 東京エレクトロン株式会社 基板処理装置および基板処理方法
JP5951444B2 (ja) 2012-10-25 2016-07-13 東京エレクトロン株式会社 基板処理装置および基板処理方法
KR20150122902A (ko) * 2014-04-23 2015-11-03 주식회사 제우스 기판 처리온도 모니터링장치와 기판 처리온도 모니터링방법
JP6329428B2 (ja) * 2014-05-09 2018-05-23 東京エレクトロン株式会社 基板処理装置、基板処理装置の付着物除去方法、及び記憶媒体
CN104183524A (zh) * 2014-08-27 2014-12-03 上海华力微电子有限公司 一种晶圆边缘的刻蚀装置
JP6392035B2 (ja) * 2014-09-02 2018-09-19 東京エレクトロン株式会社 基板液処理装置
WO2016121023A1 (ja) * 2015-01-28 2016-08-04 三菱電機株式会社 周辺露光装置
CN106252258B (zh) * 2015-06-15 2018-12-07 株式会社思可林集团 基板处理装置
JP6845696B2 (ja) * 2016-02-25 2021-03-24 芝浦メカトロニクス株式会社 基板処理装置、基板処理方法及び基板の製造方法
DE112016006567B4 (de) * 2016-03-10 2022-12-29 Mitsubishi Electric Corporation Substratansaugstufe, substratbehandlungsvorrichtung und substratbehandlungsverfahren
JP6784546B2 (ja) * 2016-09-08 2020-11-11 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
US10497667B2 (en) 2017-09-26 2019-12-03 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for bond wave propagation control
CN109955420B (zh) * 2017-12-14 2021-05-18 奇景光电股份有限公司 模具分离装置及其分离方法
JP2021036061A (ja) * 2017-12-15 2021-03-04 東京エレクトロン株式会社 基板液処理装置
US10612151B2 (en) * 2018-02-28 2020-04-07 Lam Research Corporation Flow assisted dynamic seal for high-convection, continuous-rotation plating
JP7082514B2 (ja) * 2018-04-04 2022-06-08 株式会社Kelk 流体加熱装置
JP6813816B2 (ja) * 2018-04-05 2021-01-13 東京エレクトロン株式会社 接合システムおよび接合方法
JP7166089B2 (ja) * 2018-06-29 2022-11-07 東京エレクトロン株式会社 基板処理装置、基板処理システムおよび基板処理方法
JP7110053B2 (ja) * 2018-09-27 2022-08-01 東京エレクトロン株式会社 基板処理装置
JP7314634B2 (ja) 2019-06-11 2023-07-26 東京エレクトロン株式会社 塗布装置及び塗布方法
JP7390837B2 (ja) * 2019-09-27 2023-12-04 東京エレクトロン株式会社 基板処理方法および基板処理装置
CN112670207B (zh) * 2020-12-21 2023-10-31 长江存储科技有限责任公司 晶边处理设备及待处理晶圆结构的处理方法
JP7719651B2 (ja) * 2021-07-15 2025-08-06 株式会社Ｓｃｒｅｅｎホールディングス 基板洗浄装置、基板洗浄システム、基板処理システム、基板洗浄方法および基板処理方法
JP7778016B2 (ja) * 2022-03-23 2025-12-01 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP7839713B2 (ja) * 2022-09-21 2026-04-02 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009010144A (ja) 2007-06-27 2009-01-15 Hitachi Kokusai Electric Inc 基板処理装置
JP2009295805A (ja) 2008-06-05 2009-12-17 Tokyo Electron Ltd 液処理装置および液処理方法
JP2010028059A (ja) 2008-07-24 2010-02-04 Tokyo Electron Ltd 液処理装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6053982A (en) * 1995-09-01 2000-04-25 Asm America, Inc. Wafer support system
WO2000032835A2 (en) * 1998-11-30 2000-06-08 Applied Materials, Inc. Electro-chemical deposition system
JP3438658B2 (ja) * 1999-07-22 2003-08-18 ウシオ電機株式会社 ランプユニット及び光照射式加熱装置
JP2002064069A (ja) * 2000-08-17 2002-02-28 Tokyo Electron Ltd 熱処理装置
JP3745214B2 (ja) 2000-09-27 2006-02-15 大日本スクリーン製造株式会社 ベベルエッチング装置およびベベルエッチング方法
JP2003115474A (ja) 2001-10-03 2003-04-18 Ebara Corp 基板処理装置及び方法
JP3727602B2 (ja) * 2002-03-11 2005-12-14 大日本スクリーン製造株式会社 基板周縁処理装置および基板周縁処理方法
US20070267143A1 (en) * 2006-05-16 2007-11-22 Applied Materials, Inc. In situ cleaning of CVD system exhaust
WO2008005540A2 (en) * 2006-07-07 2008-01-10 Accretech Usa, Inc. Method and apparatus for cleaning a wafer substrate
JP4950786B2 (ja) * 2007-07-11 2012-06-13 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
JP4943381B2 (ja) * 2008-06-05 2012-05-30 東京エレクトロン株式会社 液処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009010144A (ja) 2007-06-27 2009-01-15 Hitachi Kokusai Electric Inc 基板処理装置
JP2009295805A (ja) 2008-06-05 2009-12-17 Tokyo Electron Ltd 液処理装置および液処理方法
JP2010028059A (ja) 2008-07-24 2010-02-04 Tokyo Electron Ltd 液処理装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20250008995A (ko) * 2019-04-16 2025-01-16 도쿄엘렉트론가부시키가이샤 기판 처리 장치
KR102890999B1 (ko) 2019-04-16 2025-11-25 도쿄엘렉트론가부시키가이샤 기판 처리 장치

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JP2012084856A (ja) 2012-04-26
JP5668650B2 (ja) 2015-02-12
US8887741B2 (en) 2014-11-18
US20120064256A1 (en) 2012-03-15
KR20120028212A (ko) 2012-03-22
TWI483333B (zh) 2015-05-01
TW201218299A (en) 2012-05-01

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