JP7160624B2 - 基板処理装置および基板処理方法 - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/041—Cleaning travelling work
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/02087—Cleaning of wafer edges
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/0209—Cleaning of wafer backside
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- H—ELECTRICITY
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- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
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- Condensed Matter Physics & Semiconductors (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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- Cleaning Or Drying Semiconductors (AREA)
Description
150 充填材供給部
160 洗浄液供給部
W 基板
Claims (18)
- 上面および裏面を有する基板を処理する基板処理装置であって、
前記基板の前記裏面の中央部を保持して回転させる基板保持部と、
前記基板保持部に保持された前記基板の前記上面に充填材を供給する充填材供給部と、
前記基板保持部に保持された前記基板の前記裏面に洗浄液を供給する第1洗浄液供給部と
を備え、
前記第1洗浄液供給部は、前記基板の前記裏面のうちの前記基板保持部に保持される領域に向けて前記洗浄液を供給し、
前記第1洗浄液供給部は、前記基板の前記裏面に到達する直前の前記洗浄液の進行方向を前記基板の前記裏面に投影した成分が所定方向に平行になるように前記基板に向いており、
前記所定方向は、前記基板の中心から前記洗浄液の到着点に向かう方向に垂直な方向に対して20°以内の範囲で前記基板の径方向内側に向く、基板処理装置。 - 前記基板保持部は、前記基板の前記裏面の中央部に吸着する、請求項1に記載の基板処理装置。
- 前記第1洗浄液供給部から前記基板の前記裏面に供給された前記洗浄液は、前記基板の前記裏面で広がり、前記基板の前記裏面のうち前記基板保持部に保持される領域に近接する、請求項1または2に記載の基板処理装置。
- 前記第1洗浄液供給部は、前記洗浄液を吐出する少なくとも1つのノズルを有する、請求項1から3のいずれかに記載の基板処理装置。
- 前記少なくとも1つのノズルは、第1ノズルと第2ノズルとを含み、
前記基板の中心から前記第1ノズルによって前記洗浄液が前記基板に吐出される地点までの距離は、前記基板の中心から前記第2ノズルによって前記洗浄液が前記基板に吐出される地点までの距離とは異なる、請求項4に記載の基板処理装置。 - 前記第1ノズルから吐出される洗浄液は、前記第2ノズルから吐出される洗浄液とは異なる、請求項5に記載の基板処理装置。
- 前記少なくとも1つのノズルを水平方向に移動するノズル移動部をさらに備える、請求項4から6のいずれかに記載の基板処理装置。
- 前記基板の側面を洗浄するための洗浄液を供給する第2洗浄液供給部をさらに備える、請求項1から6のいずれかに記載の基板処理装置。
- 前記基板の中心から前記第2洗浄液供給部によって前記洗浄液が前記基板に供給される地点までの距離は、前記基板の中心から前記第1洗浄液供給部によって前記洗浄液が前記基板に供給される地点までの距離よりも長い、請求項8に記載の基板処理装置。
- 前記洗浄液は、イソプロピルアルコール、プロピレングリコールモノメチルエーテルアセテート、1-エトキシ-2-プロパノールおよびアセトンの少なくとも1つを含む、請求項1から9のいずれかに記載の基板処理装置。
- 前記基板の前記裏面に不活性ガスを供給する不活性ガス供給部をさらに備える、請求項1から10のいずれかに記載の基板処理装置。
- 上面および裏面を有する基板を処理する基板処理方法であって、
前記基板の前記裏面の中央部を保持して回転させる工程と、
前記基板の前記上面に充填材を供給する充填材供給工程と、
前記充填材供給工程の後、前記基板の前記裏面に洗浄液を供給する洗浄液供給工程と
を包含し、
前記洗浄液供給工程は、前記基板の前記裏面のうちの前記基板の保持される領域に向けて前記洗浄液を供給する工程を含み、
前記洗浄液を供給する工程では、前記基板の前記裏面に到達する直前の前記洗浄液の進行方向を前記基板の前記裏面に投影した成分が所定方向に平行になるように前記洗浄液を供給し、
前記所定方向は、前記基板の中心から前記洗浄液の到着点に向かう方向に垂直な方向に対して20°以内の範囲で前記基板の径方向内側に向く、基板処理方法。 - 前記洗浄液供給工程において、前記基板の前記裏面に供給された前記洗浄液は、前記基板の前記裏面で広がり、前記基板の前記裏面のうち前記基板の保持される領域に近接する、請求項12に記載の基板処理方法。
- 上面および裏面を有する基板を処理する基板処理方法であって、
前記基板の前記裏面の中央部を保持して回転させる工程と、
前記基板の前記上面に充填材を供給する充填材供給工程と、
前記充填材供給工程の後、前記基板の前記裏面に洗浄液を供給する洗浄液供給工程と
を包含し、
前記洗浄液供給工程は、前記基板の前記裏面のうちの前記基板の保持される領域に向けて前記洗浄液を供給する工程を含み、
前記充填材供給工程は、
前記基板の前記上面に前記充填材を吐出する工程と、
前記充填材を吐出した後、第1回転速度で前記基板を回転させる工程と、
前記第1回転速度で前記基板を回転させた後、前記第1回転速度よりも低い第2回転速度で前記基板を回転させる工程と、
前記第2回転速度で前記基板を回転させた後、前記第2回転速度よりも高い第3回転速度で前記基板を回転させる工程と
を含む、基板処理方法。 - 前記洗浄液供給工程は、
第1洗浄液供給部が前記基板の前記裏面のうちの前記基板の保持される領域に向けて前記洗浄液を供給する工程と、
第2洗浄液供給部が前記基板の側面を洗浄するための洗浄液を供給する工程と、
前記第1洗浄液供給部が前記洗浄液を供給する間、前記第3回転速度よりも低い第4回転速度で前記基板を回転させる工程と、
前記第2洗浄液供給部が前記洗浄液を供給する間、前記第4回転速度よりも高い第5回転速度で前記基板を回転させる工程と
を含む、請求項14に記載の基板処理方法。 - 上面および裏面を有する基板を処理する基板処理方法であって、
前記基板の前記裏面の中央部を保持して回転させる工程と、
前記基板の前記上面に充填材を供給する充填材供給工程と、
前記充填材供給工程の後、前記基板の前記裏面に洗浄液を供給する洗浄液供給工程と
を包含し、
前記洗浄液供給工程は、前記基板の前記裏面のうちの前記基板の保持される領域に向けて前記洗浄液を供給する工程を含み、
前記基板処理方法は、前記充填材を供給する工程を開始する前から前記洗浄液を供給する工程の終了まで前記基板の前記裏面に不活性ガスを供給する工程をさらに包含する、基板処理方法。 - 前記不活性ガスを供給する工程において、前記充填材を供給する工程における前記不活性ガスの流量は前記洗浄液を供給する工程における前記不活性ガスの流量よりも低い、請求項16に記載の基板処理方法。
- 上面および裏面を有する基板を処理する基板処理方法であって、
前記基板の前記裏面の中央部を保持して回転させる工程と、
前記基板の前記上面に充填材を供給する充填材供給工程と、
前記充填材供給工程の後、前記基板の前記裏面に洗浄液を供給する洗浄液供給工程と
を包含し、
前記洗浄液供給工程は、前記基板の前記裏面のうちの前記基板の保持される領域に向けて前記洗浄液を供給する工程を含み、
前記洗浄液供給工程は、前記基板の前記裏面のうちの前記基板の保持される領域に向けて前記洗浄液を供給し、その後、前記基板の側面を洗浄するための洗浄液を供給する、基板処理方法。
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JP2018196015A JP7160624B2 (ja) | 2018-10-17 | 2018-10-17 | 基板処理装置および基板処理方法 |
US16/654,482 US11469117B2 (en) | 2018-10-17 | 2019-10-16 | Substrate processing apparatus, and substrate processing method |
CN201910987234.2A CN111063633A (zh) | 2018-10-17 | 2019-10-17 | 基板处理装置以及基板处理方法 |
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JP7110053B2 (ja) * | 2018-09-27 | 2022-08-01 | 東京エレクトロン株式会社 | 基板処理装置 |
JP7194645B2 (ja) * | 2019-05-31 | 2022-12-22 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
KR102616585B1 (ko) | 2022-04-01 | 2023-12-21 | 세메스 주식회사 | 기판처리장치 및 기판처리방법 |
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EP1652222A1 (en) * | 2003-08-07 | 2006-05-03 | Ebara Corporation | Substrate processing apparatus, substrate processing method, and substrate holding apparatus |
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