JP7110053B2 - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
- Publication number
- JP7110053B2 JP7110053B2 JP2018182833A JP2018182833A JP7110053B2 JP 7110053 B2 JP7110053 B2 JP 7110053B2 JP 2018182833 A JP2018182833 A JP 2018182833A JP 2018182833 A JP2018182833 A JP 2018182833A JP 7110053 B2 JP7110053 B2 JP 7110053B2
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- 238000001179 sorption measurement Methods 0.000 claims description 26
- 238000011282 treatment Methods 0.000 claims description 22
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- 238000010438 heat treatment Methods 0.000 claims description 15
- 239000011261 inert gas Substances 0.000 claims description 4
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- 238000007789 sealing Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 113
- 239000000126 substance Substances 0.000 description 57
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- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 24
- 238000001035 drying Methods 0.000 description 20
- 238000004140 cleaning Methods 0.000 description 7
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- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
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- 241000473391 Archosargus rhomboidalis Species 0.000 description 1
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- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
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- 230000005540 biological transmission Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
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- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 1
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
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- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- H01L21/67248—Temperature monitoring
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Chemically Coating (AREA)
- Polarising Elements (AREA)
- Manufacturing Of Printed Wiring (AREA)
Description
PIN:リフトピン211の高さ位置を表しており、UPが受け渡し位置、DOWNが処理位置にあることを表している。
EL2:第2電極部161Bの高さ位置を表しており、UPが第1電極部161Aと接触する位置、DOWNが第1電極部161Aから離れた位置にあることを表している。
POWER:給電部300からヒーター142への給電状態を表しており、ONが給電状態、OFFが給電停止状態であることを表している。
VAC:吸引装置154から吸着プレート120の下面吸引流路溝121Wへの吸引力印加状態を表しており、ONが吸引中、OFFが吸引停止中を表している。
N2-1:パージガス供給装置155から吸着プレート120の下面吸引流路溝121Wへのパージガス供給状態を表しており、ONが供給中、OFFが供給停止中を表している。
N2-2:パージガス供給装置155から吸着プレート120の下面パージ流路溝121Gへのパージガス供給状態を表しており、ONが供給中、OFFが供給停止中を表している。
WSC:ウエハセンサ901の動作状態を表しており、ONが吸着プレート120上のウエハWの有無を検出している状態、OFFが検出を行っていない状態を示す。「On Wafer Check」はウエハWが吸着プレート120上にウエハWが存在していることを確認するための検出動作である。「Off Wafer Check」はウエハWが吸着プレート120k上から確実に取り去られたことを確認するための検出動作である。
基板搬送装置17のアーム(図1参照)が、処理ユニット16内に侵入し、吸着プレート120の真上に位置する。また、リフトピン211が受け渡し位置に位置する(以上時点t0~t1)。この状態で、基板搬送装置17のアームが下降し、これによりウエハWがリフトピン211の上端の上に載り、ウエハWがアームから離れる。次いで、基板搬送装置17のアームが処理ユニット16から退出する。リフトピン211が処理位置まで下降し、その過程で、ウエハWが吸着プレート120の上面120Aに載る(時点t1)。
ウエハWが吸着プレート120に吸着されたら、ホットプレート140の温度が予め定められた温度(吸着プレート120上のウエハWがその後の処理に適した温度に加熱されるような温度)まで昇温するように、ホットプレート140のヒーター142への供給電力を調節する(時点t1~t3)。
次いで、処理液供給部700のノズルアームにより、薬液ノズル710が、ウエハWの中心部の真上に位置する。この状態で、薬液ノズル710から温調された薬液がウエハWの表面(上面)に供給される(時点t3~t4)。薬液の供給は、薬液の液面LSがウエハWの上面よりも上に位置するまで続けられる。このとき、周縁カバー体180の上部181が堰として作用し、薬液が回転テーブル100の外側にこぼれ落ちることを防止する。
薬液処理が終了したら、まず、給電部300からのヒーター142への給電を停止し(時点t4)、次いで、第2電極部161Bを下降位置に下降させる(時点t5)。先に給電を停止することにより、第2電極161Bの下降時に電極間にスパークが生じることを防止することができる。
次に、回転テーブル100を低速回転とし、リンスノズル720をウエハWの中心部の真上に位置させ、リンスノズル720からリンス液を供給する(時点t6~t7)。これにより、上部181よりも半径方向内側の領域に残留している全ての薬液(ウエハW上に残留している薬液も含む)が、リンス液により洗い流される。
次に、回転テーブル100を高速回転にし、リンスノズル720からのリンス液の吐出を停止し、上部181よりも半径方向内側の領域に残留している全てのリンス液(ウエハW上に残留しているリンス液も含む)を、遠心力により外方に飛散させる(時点t7~t8)。これにより、ウエハWが乾燥する。
次に、切替装置(三方弁)156を切り替えて、吸引配管155Wの接続先を吸引装置157Wからパージガス供給装置159に変更する。これにより、プレート用の下面吸引流路溝121Pにパージガスを供給するとともに、基板用の下面吸引流路溝122Wを介して吸着プレート120の上面120Aの凹領域125Wにパージガスを供給する。これにより、吸着プレート120に対するウエハWの吸着が解除される(時点t10)。
100 回転テーブル
102回転駆動機構
142 電気ヒーター
146,147,148A,148B,149 電装部品(配線、センサ、サーモスイッチ等)
180 周縁カバー体
S 収容空間
Claims (14)
- 基板を保持して回転するトッププレートを有する回転テーブルと、
前記回転テーブルを回転軸線周りに回転させる回転駆動機構と、
前記回転テーブルに保持された前記基板の上面に処理液を供給する処理液ノズルと、
前記トッププレートに設けられ、前記トッププレートを介して前記基板を加熱する電気ヒーターと、
前記トッププレートの下面側に設けられ、前記電気ヒーターへの給電および前記電気ヒーターの制御のための信号を受信または送信を行う電装部品と、
前記トッププレートの周縁部に接続され、前記トッププレートと一緒に回転する周縁カバー体と、
を備え、
前記トッププレートの下方に前記電装部品を収容する収容空間が形成され、前記収容空間は、前記トッププレートおよび前記周縁カバー体を含む包囲構造物により包囲され、前記トッププレートの周縁部と前記周縁カバー体との間がシールされている、基板処理装置。 - 前記収容空間を不活性ガス雰囲気とするために前記収容空間に不活性ガスを供給する不活性ガス供給部をさらに備えた、請求項1記載の基板処理装置。
- 前記周縁カバー体のうちの前記トッププレートとの接続部は、前記トッププレートの周縁部の上面から立ち上がるとともに前記トッププレートに保持された前記基板の周囲を囲む堰を形成し、前記堰の高さは前記トッププレートに保持された前記基板の上面の高さより高く、前記トッププレートと前記堰とにより、前記トッププレートに保持された前記基板を浸漬しうる量の処理液を貯留することができる、請求項1記載の基板処理装置。
- 前記堰は、前記トッププレートの中心部に近づくに従って低くなるように傾斜する斜め上方を向いた内周面を有する、請求項3記載の基板処理装置。
- 前記周縁カバー体の外周面は、下側にゆくに従って半径方向外側にゆくように傾斜している、請求項3記載の基板処理装置。
- 前記周縁カバー体の前記外周面に撥水化処理が施されている、請求項5記載の基板処理装置。
- 前記回転テーブルに固定されて前記周縁カバー体と一緒に回転する回転カップをさらに備え、前記回転カップの上端は、前記基板から前記堰を介して飛散する処理液を受け止め得る高さに位置し、前記周縁カバー体の前記外周面と前記回転カップの内周面との間に、前記基板から前記堰を介して飛散する処理液が通過する通路が形成され、前記回転カップの内周面は、下側にゆくに従って半径方向外側にゆくように傾斜している、請求項5記載の基板処理装置。
- 前記処理液が前記通路内を逆流することを防止するための返しが、前記周縁カバー体の前記外周面および前記回転カップの前記内周面の少なくとも一方に設けられている、請求項7記載の基板処理装置。
- 前記周縁カバー体は、前記トッププレートから取り外すことができるように構成され、前記周縁カバー体の前記堰の部分と前記トッププレートとの間にシール部材が設けられている、請求項3記載の基板処理装置。
- 前記トッププレートは、前記電気ヒーターが設けられたベースプレートと、前記ベースプレートの上面に着脱可能に載置され、かつ、前記基板を吸着する上面を有する吸着プレートと、を有し、前記周縁カバー体の前記堰が、前記吸着プレートの前記上面の周縁部に被せられて前記吸着プレートを前記ベースプレートに固定する、請求項3記載の基板処理装置。
- 前記吸着プレートの上面は環状の外周縁領域を有し、前記吸着プレートの前記上面の前記外周縁領域のうち、少なくとも前記周縁カバー体の前記堰の下方にある部分から前記吸着プレートに吸着された前記基板の周縁部の下方にある部分までの間に撥水化処理が施されている、請求項10記載の基板処理装置。
- 前記周縁カバー体は、前記堰から前記吸着プレートに吸着された前記基板の周縁部の下方まで延びる環状の内側延長部分をさらに有し、前記内側延長部分の上面に撥水処理が施されている、請求項10記載の基板処理装置。
- 前記トッププレートの周囲を囲む回転しない液受けカップをさらに備え、前記液受けカップに、排気配管および排液配管が接続されている、請求項1記載の基板処理装置。
- 回転する前記包囲構造物と回転しない前記液受けカップとの間に、ラビリンスシール構造が設けられている、請求項13記載の基板処理装置。
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