JP7386918B2 - 支持ユニット及び基板処理装置 - Google Patents
支持ユニット及び基板処理装置 Download PDFInfo
- Publication number
- JP7386918B2 JP7386918B2 JP2022060781A JP2022060781A JP7386918B2 JP 7386918 B2 JP7386918 B2 JP 7386918B2 JP 2022060781 A JP2022060781 A JP 2022060781A JP 2022060781 A JP2022060781 A JP 2022060781A JP 7386918 B2 JP7386918 B2 JP 7386918B2
- Authority
- JP
- Japan
- Prior art keywords
- support unit
- heating member
- temperature
- internal space
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims description 151
- 238000012545 processing Methods 0.000 title claims description 98
- 238000010438 heat treatment Methods 0.000 claims description 161
- 238000001816 cooling Methods 0.000 claims description 88
- 238000000034 method Methods 0.000 claims description 88
- 230000008569 process Effects 0.000 claims description 86
- 230000000903 blocking effect Effects 0.000 claims description 57
- 239000007788 liquid Substances 0.000 claims description 40
- 239000007789 gas Substances 0.000 claims description 39
- 239000012809 cooling fluid Substances 0.000 claims description 19
- 239000011261 inert gas Substances 0.000 claims description 15
- 239000012530 fluid Substances 0.000 claims description 13
- 230000008859 change Effects 0.000 claims description 8
- 230000004044 response Effects 0.000 claims description 7
- 239000011796 hollow space material Substances 0.000 claims description 6
- 238000011084 recovery Methods 0.000 description 39
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 34
- 238000012546 transfer Methods 0.000 description 34
- 239000010453 quartz Substances 0.000 description 33
- 239000000126 substance Substances 0.000 description 12
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 8
- 238000000926 separation method Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000000523 sample Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 239000000498 cooling water Substances 0.000 description 5
- 238000004880 explosion Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 230000002159 abnormal effect Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 230000007257 malfunction Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 239000000112 cooling gas Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003517 fume Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000006903 response to temperature Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/0019—Circuit arrangements
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/0033—Heating devices using lamps
- H05B3/0038—Heating devices using lamps for industrial applications
- H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Description
100 チャンバー
300 支持ユニット
310 チャック
312 チャックステージ
312a 遮断突起
314 ウインドー
314a 流出ホール
317 内部空間
320 スピン駆動部
330 バックノズル部
340 加熱モジュール
342 加熱部材
344 電源ライン
346 電源
347 スイッチ
348 端子台
349 支持部材
360 反射板
361 開口
362 支持ブラケット
370 冷却板
372 冷却流路
373 開口
374 接触部
374a 第1接触部
374b 第2接触部
375 離隔部
380 ガス供給部材
390 冷却流体供給部材
700 インターロックモジュール
710 温度センサー
712 プローブ
714 センサーライン
720 第1遮断部材
730 第2遮断部材
3000 制御器
Claims (17)
- 基板を支持する支持ユニットにおいて、
回転可能なチャックステージと、
前記チャックステージより上部に配置され、前記支持ユニットに支持された基板を加熱する加熱部材と、
前記加熱部材の下に配置される反射板と、
前記反射板の下に配置される冷却板と、
上部から見る時、前記反射板に形成された開口と重畳されるように配置され、前記冷却板の上部に配置される支持部材と、
前記加熱部材に電力を印加する電源と、
前記チャックステージより上部に配置され、前記加熱部材が配置される内部空間を形成するウィンドウと、
前記加熱部材に印加される前記電力を選択的に遮断するインターロックモジュールと、を含み、
前記インターロックモジュールは、
前記内部空間の温度変化に応じて前記電源および前記加熱部材により提供される閉回路を開放させることにより、前記電源から前記加熱部材に伝達される前記電力を遮断する遮断部材を含み、
前記遮断部材は、前記支持部材に設置される
支持ユニット。 - 前記支持ユニットは、
制御器をさらに含み、
前記インターロックモジュールは、
前記内部空間の温度を測定し、測定された前記内部空間の温度を前記制御器に伝達する温度センサーを含み、
前記制御器は、
前記温度センサーから伝達された前記内部空間の温度が設定温度より高い場合、前記電力が前記加熱部材に印加されることを遮断する制御信号を発生させる請求項1に記載の支持ユニット。 - 前記遮断部材は、
第1遮断部材と、
前記第1遮断部材と直列連結され、前記第1遮断部材と異なる電力遮断構造を有する第2遮断部材と、を含む請求項1に記載の支持ユニット。 - 前記第1遮断部材は、ヒューズ(Fuse)を含み、
前記第2遮断部材は、バイメタル(Bi-Metal)を含む請求項3に記載の支持ユニット。 - 前記加熱部材の下に配置される板と、
前記板に形成された開口に挿入され、前記電力を前記加熱部材に伝達する電源ラインと連結される端子台と、をさらに含み、
前記加熱部材は、
環形状を有し、その一端及び他端が各々の前記端子台と連結される請求項1乃至請求項4のいずれかの一項に記載の支持ユニット。 - 前記支持ユニットは、
前記チャックステージと結合されて前記チャックステージを回転させ、中空を有するスピン駆動部と、
前記スピン駆動部の前記中空に挿入される本体と、をさらに含み、
前記板は、前記チャックステージの回転から独立的に前記本体と結合される請求項5に記載の支持ユニット。 - 前記加熱部材は、
複数に提供され、
上部から見る時、前記加熱部材は、前記本体を囲むように構成される請求項6に記載の支持ユニット。 - 基板を処理する装置において、
内部空間を有するチャンバーと、
前記内部空間で基板を支持し、回転させる支持ユニットと、
前記支持ユニットに支持されて回転する基板に処理液を供給する液供給ユニットと、
前記支持ユニットが支持する基板を処理するための処理空間を有するボウルと、
制御器と、を含み、
前記支持ユニットは、
中空を有するスピン駆動部と結合されるチャックステージと、
前記スピン駆動部の前記中空に挿入されるノズル本体と、 前記チャックステージより上部に配置され、前記支持ユニットに支持された基板を加熱する加熱部材と、
前記ノズル本体と結合され、前記加熱部材の下に配置される反射板と、
前記反射板の下に配置される冷却板と、
前記反射板に形成された開口に挿入され、前記冷却板の上部に配置される支持部材と、
前記加熱部材に電力を印加する電源と、
前記チャックステージより上部に配置され、前記加熱部材が配置される内部空間を形成するウィンドウと、
前記内部空間の温度が設定温度より高い場合、前記加熱部材に伝達される前記電力を遮断するインターロックモジュールと、を含み、
前記インターロックモジュールは、
前記内部空間の温度を測定し、測定された前記内部空間の温度を前記制御器に伝達する温度センサーと、
前記内部空間の温度変化に応じて前記電源および前記加熱部材により提供される閉回路を開放させることにより、前記電源から前記加熱部材に伝達される前記電力を遮断する遮断部材と、を含み、
前記遮断部材は、前記支持部材に設置される
基板処理装置。 - 前記制御器は、
前記温度センサーから伝達された前記内部空間の温度が前記設定温度より高い場合、前記電力が前記加熱部材に印加されることを遮断する制御信号を発生させる請求項8に記載の基板処理装置。 - 前記遮断部材は、
第1遮断部材と、
前記第1遮断部材と異なる電力遮断構造を有する第2遮断部材と、を含む請求項8に記載の基板処理装置。 - 前記第1遮断部材は、ヒューズ(Fuse)を含み、
前記第2遮断部材は、バイメタル(Bi-Metal)を含む請求項10に記載の基板処理装置。 - 前記加熱部材の下に配置される板と、
前記板に形成された開口に挿入され、前記加熱部材に前記電力を伝達する電源ラインと連結される端子台と、をさらに含み、
前記加熱部材は、
環形状を有してその一端及び他端が各々前記端子台と連結される請求項8乃至請求項11のいずれかの一項に記載の基板処理装置。 - 前記加熱部材は、
複数に提供され、
各々の前記加熱部材は、上部から見る時前記ノズル本体を囲むように構成される請求項8乃至請求項11のいずれかの一項に記載の基板処理装置。 - 前記加熱部材は、
前記チャックステージの回転から独立的に前記反射板の上部に固定設置される請求項13に記載の基板処理装置。 - 基板を支持する支持ユニットにおいて、
中空を有するスピン駆動部と結合されるチャックステージと、
前記支持ユニットに支持された基板の背面に処理流体を供給するバックノズル部と、
前記チャックステージより上部に配置され、前記支持ユニットに支持された基板を加熱する複数のIRランプと、
前記IRランプに電力を印加する電源と、
前記チャックステージより上部に配置され、前記IRランプが配置される内部空間を形成し、その側面に少なくとも1つ以上の流出ホールが形成されるウィンドウと、
前記IRランプより下部に配置される反射板と、
冷却流体が流れる冷却流路が形成され、前記反射板より下部に配置されその上面の中で一部が前記反射板の下面と接触される冷却板と、
前記反射板に形成された開口に挿入され、前記冷却板に置かれる支持部材と、
前記反射板と前記冷却板との間の空間に非活性ガスを供給するガス供給ラインと、
設定条件が満足されれば、前記IRランプに印加される前記電力を遮断するインターロックモジュールを含み、
前記インターロックモジュールは、
前記支持部材に設置され、前記内部空間の温度変化に応じて前記電源および前記IRランプにより提供される閉回路を開放させることにより、前記電源から前記IRランプに伝達される前記電力を遮断する遮断部材と、
前記内部空間の温度を測定し、前記支持ユニットを制御する制御器に測定された前記内部空間の温度を伝達する温度センサーと、を含む
支持ユニット。 - 前記バックノズル部は、
前記中空に挿入されるノズル本体と、
前記ノズル本体の上部に提供される流体噴射部と、を含み、
前記反射板および前記冷却板は、前記バックノズル部と結合されて前記チャックステージの回転から独立的であり、
前記流出ホールは、複数が提供され、上部から見る時、前記ウィンドウの円周方向に沿って離隔されて形成される請求項15に記載の支持ユニット。 - 前記遮断部材は、
ヒューズ(Fuse)を有する第1遮断部材と、
バイメタル(Bi-Metal)を有する第2遮断部材と、を含み、
前記制御器は、
前記温度センサーから伝達された前記内部空間の温度が設定温度より高い場合、前記電力が前記IRランプに伝達されることを遮断する制御信号を発生させる請求項15又は請求項16に記載の支持ユニット。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020210042577A KR102683732B1 (ko) | 2021-04-01 | 2021-04-01 | 지지 유닛 및 기판 처리 장치 |
KR10-2021-0042577 | 2021-04-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2022159242A JP2022159242A (ja) | 2022-10-17 |
JP7386918B2 true JP7386918B2 (ja) | 2023-11-27 |
Family
ID=83450089
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022060781A Active JP7386918B2 (ja) | 2021-04-01 | 2022-03-31 | 支持ユニット及び基板処理装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20220319905A1 (ja) |
JP (1) | JP7386918B2 (ja) |
KR (1) | KR102683732B1 (ja) |
CN (1) | CN115206835A (ja) |
TW (1) | TWI810866B (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005310940A (ja) | 2004-04-20 | 2005-11-04 | Dainippon Screen Mfg Co Ltd | 処理液タンクの過熱防止装置 |
JP2014042027A (ja) | 2012-08-23 | 2014-03-06 | Lam Research Ag | ウエハ状物品の液体処理のための方法及び装置 |
JP2020056095A (ja) | 2018-09-27 | 2020-04-09 | 東京エレクトロン株式会社 | 基板処理装置 |
US20210050235A1 (en) | 2019-08-14 | 2021-02-18 | Semes Co., Ltd. | Support unit, substrate treating apparatus including the same, and substrate treating method |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07302778A (ja) * | 1994-04-28 | 1995-11-14 | Mitsubishi Corp | 半導体製造における洗浄液加熱装置 |
US9748118B2 (en) * | 2013-07-31 | 2017-08-29 | Semes Co., Ltd. | Substrate treating apparatus |
KR102359295B1 (ko) * | 2013-12-06 | 2022-02-08 | 세메스 주식회사 | 기판 가열 유닛 |
KR101681183B1 (ko) * | 2014-07-11 | 2016-12-02 | 세메스 주식회사 | 기판 처리 장치 |
KR101605717B1 (ko) * | 2014-07-16 | 2016-03-23 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
EP3442016B1 (en) * | 2016-05-26 | 2023-06-07 | Mimasu Semiconductor Industry Co., Ltd. | Wafer heating and holding device and method for rotary table, and wafer rotating and holding device |
US11043403B2 (en) * | 2018-04-06 | 2021-06-22 | Semes Co., Ltd. | Substrate support unit and substrate processing apparatus having the same including reflective member configured to reflect light toward substrate |
KR102211817B1 (ko) * | 2018-12-14 | 2021-02-05 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
-
2021
- 2021-04-01 KR KR1020210042577A patent/KR102683732B1/ko active IP Right Grant
-
2022
- 2022-03-25 US US17/704,194 patent/US20220319905A1/en active Pending
- 2022-03-25 TW TW111111460A patent/TWI810866B/zh active
- 2022-03-31 JP JP2022060781A patent/JP7386918B2/ja active Active
- 2022-04-01 CN CN202210348945.7A patent/CN115206835A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005310940A (ja) | 2004-04-20 | 2005-11-04 | Dainippon Screen Mfg Co Ltd | 処理液タンクの過熱防止装置 |
JP2014042027A (ja) | 2012-08-23 | 2014-03-06 | Lam Research Ag | ウエハ状物品の液体処理のための方法及び装置 |
JP2020056095A (ja) | 2018-09-27 | 2020-04-09 | 東京エレクトロン株式会社 | 基板処理装置 |
US20210050235A1 (en) | 2019-08-14 | 2021-02-18 | Semes Co., Ltd. | Support unit, substrate treating apparatus including the same, and substrate treating method |
Also Published As
Publication number | Publication date |
---|---|
KR102683732B1 (ko) | 2024-07-12 |
TWI810866B (zh) | 2023-08-01 |
CN115206835A (zh) | 2022-10-18 |
TW202240743A (zh) | 2022-10-16 |
KR20220137197A (ko) | 2022-10-12 |
US20220319905A1 (en) | 2022-10-06 |
JP2022159242A (ja) | 2022-10-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR20120028212A (ko) | 액처리 장치, 액처리 방법 및 기억 매체 | |
US9748118B2 (en) | Substrate treating apparatus | |
JP6671217B2 (ja) | 基板処理方法および基板処理装置 | |
US20210050235A1 (en) | Support unit, substrate treating apparatus including the same, and substrate treating method | |
KR102584511B1 (ko) | 지지 유닛 및 이를 포함하는 기판 처리 장치 | |
KR102359295B1 (ko) | 기판 가열 유닛 | |
TWI819405B (zh) | 支撐單元及用於處理基板之設備 | |
KR102504568B1 (ko) | 기판 가열 유닛 | |
KR20230119620A (ko) | 지지 유닛, 이를 포함하는 기판 처리 장치 | |
KR102407266B1 (ko) | 지지 유닛, 이를 포함하는 기판 처리 장치 및 기판 처리 방법 | |
US20240222159A1 (en) | Bowl and apparatus for processing substrate | |
JP7386918B2 (ja) | 支持ユニット及び基板処理装置 | |
KR102211817B1 (ko) | 기판 처리 장치 및 기판 처리 방법 | |
KR102119690B1 (ko) | 기판 가열 유닛 | |
KR102440986B1 (ko) | 기판 처리 장치 및 방법 | |
JP7511422B2 (ja) | 基板処理方法および基板処理装置 | |
US20240038544A1 (en) | Substrate processing method and substrate processing apparatus | |
KR20220121302A (ko) | 기판 처리 장치 및 기판 처리 방법 | |
KR20200056969A (ko) | 기판 지지 유닛 및 이를 갖는 기판 처리 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220331 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20230420 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230502 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230801 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20231107 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20231114 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7386918 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |