KR101588691B1 - 플라즈마 프로세스에 의한 가공 형상의 예측 시뮬레이션 장치와 시뮬레이션 방법 및 프로그램 - Google Patents

플라즈마 프로세스에 의한 가공 형상의 예측 시뮬레이션 장치와 시뮬레이션 방법 및 프로그램 Download PDF

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KR101588691B1
KR101588691B1 KR1020137026341A KR20137026341A KR101588691B1 KR 101588691 B1 KR101588691 B1 KR 101588691B1 KR 1020137026341 A KR1020137026341 A KR 1020137026341A KR 20137026341 A KR20137026341 A KR 20137026341A KR 101588691 B1 KR101588691 B1 KR 101588691B1
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movement amount
etching process
surface movement
etching
deposition
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KR20140016924A (ko
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고헤이 오노
다쿠야 이와사키
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미즈호 죠호 소켄 가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/20—Design optimisation, verification or simulation
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process

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  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Evolutionary Computation (AREA)
  • General Engineering & Computer Science (AREA)
  • Geometry (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020137026341A 2011-03-07 2012-02-29 플라즈마 프로세스에 의한 가공 형상의 예측 시뮬레이션 장치와 시뮬레이션 방법 및 프로그램 Expired - Fee Related KR101588691B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2011-049680 2011-03-07
JP2011049680A JP5685762B2 (ja) 2011-03-07 2011-03-07 プラズマ加工形状シミュレーション装置及びプログラム
PCT/JP2012/055091 WO2012121081A1 (ja) 2011-03-07 2012-02-29 プラズマプロセスによる加工形状の予測シミュレーション装置とシミュレーションの方法及びプログラム

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KR20140016924A KR20140016924A (ko) 2014-02-10
KR101588691B1 true KR101588691B1 (ko) 2016-01-27

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US (1) US20140005991A1 (enExample)
EP (1) EP2685489A4 (enExample)
JP (1) JP5685762B2 (enExample)
KR (1) KR101588691B1 (enExample)
TW (1) TWI529801B (enExample)
WO (1) WO2012121081A1 (enExample)

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US10138550B2 (en) * 2014-09-10 2018-11-27 Toshiba Memory Corporation Film deposition method and an apparatus
US10534355B2 (en) 2015-02-20 2020-01-14 Sony Semiconductor Solutions Corporation Information processing device, processing device, prediction method, and processing method
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US11921433B2 (en) 2018-04-10 2024-03-05 Lam Research Corporation Optical metrology in machine learning to characterize features
CN110457780A (zh) * 2019-07-23 2019-11-15 上海卫星装备研究所 介质深层充电电位和内部充电电场获取方法及存储介质
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KR20250028381A (ko) * 2022-07-01 2025-02-28 도쿄엘렉트론가부시키가이샤 기판 처리 장치의 제어 방법 및 기판 처리 시스템

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EP2685489A1 (en) 2014-01-15
EP2685489A4 (en) 2014-09-24
JP2012186394A (ja) 2012-09-27
TWI529801B (zh) 2016-04-11
JP5685762B2 (ja) 2015-03-18
WO2012121081A1 (ja) 2012-09-13
US20140005991A1 (en) 2014-01-02
KR20140016924A (ko) 2014-02-10

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