JP5685762B2 - プラズマ加工形状シミュレーション装置及びプログラム - Google Patents

プラズマ加工形状シミュレーション装置及びプログラム Download PDF

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JP5685762B2
JP5685762B2 JP2011049680A JP2011049680A JP5685762B2 JP 5685762 B2 JP5685762 B2 JP 5685762B2 JP 2011049680 A JP2011049680 A JP 2011049680A JP 2011049680 A JP2011049680 A JP 2011049680A JP 5685762 B2 JP5685762 B2 JP 5685762B2
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etching process
etching
movement amount
surface movement
deposition
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JP2012186394A5 (enExample
JP2012186394A (ja
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耕平 小野
耕平 小野
拓也 岩崎
拓也 岩崎
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Mizuho Information and Research Institute Inc
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Mizuho Information and Research Institute Inc
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Priority to JP2011049680A priority Critical patent/JP5685762B2/ja
Application filed by Mizuho Information and Research Institute Inc filed Critical Mizuho Information and Research Institute Inc
Priority to KR1020137026341A priority patent/KR101588691B1/ko
Priority to PCT/JP2012/055091 priority patent/WO2012121081A1/ja
Priority to EP12754266.0A priority patent/EP2685489A4/en
Priority to US14/003,692 priority patent/US20140005991A1/en
Priority to TW101107151A priority patent/TWI529801B/zh
Publication of JP2012186394A publication Critical patent/JP2012186394A/ja
Publication of JP2012186394A5 publication Critical patent/JP2012186394A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/20—Design optimisation, verification or simulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Evolutionary Computation (AREA)
  • General Engineering & Computer Science (AREA)
  • Geometry (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2011049680A 2011-03-07 2011-03-07 プラズマ加工形状シミュレーション装置及びプログラム Expired - Fee Related JP5685762B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2011049680A JP5685762B2 (ja) 2011-03-07 2011-03-07 プラズマ加工形状シミュレーション装置及びプログラム
PCT/JP2012/055091 WO2012121081A1 (ja) 2011-03-07 2012-02-29 プラズマプロセスによる加工形状の予測シミュレーション装置とシミュレーションの方法及びプログラム
EP12754266.0A EP2685489A4 (en) 2011-03-07 2012-02-29 DEVICE FOR ESTIMATING AND SIMULATING A FORM MADE BY A PLASMA PROCESS AND SIMULATION PROCESS AND PROGRAM
US14/003,692 US20140005991A1 (en) 2011-03-07 2012-02-29 Simulator, method, and program for predicting processing shape by plasma process
KR1020137026341A KR101588691B1 (ko) 2011-03-07 2012-02-29 플라즈마 프로세스에 의한 가공 형상의 예측 시뮬레이션 장치와 시뮬레이션 방법 및 프로그램
TW101107151A TWI529801B (zh) 2011-03-07 2012-03-03 依電漿加工法之加工形狀的預測模擬裝置與模擬方法及程式

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JP2011049680A JP5685762B2 (ja) 2011-03-07 2011-03-07 プラズマ加工形状シミュレーション装置及びプログラム

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JP2012186394A JP2012186394A (ja) 2012-09-27
JP2012186394A5 JP2012186394A5 (enExample) 2014-01-30
JP5685762B2 true JP5685762B2 (ja) 2015-03-18

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US (1) US20140005991A1 (enExample)
EP (1) EP2685489A4 (enExample)
JP (1) JP5685762B2 (enExample)
KR (1) KR101588691B1 (enExample)
TW (1) TWI529801B (enExample)
WO (1) WO2012121081A1 (enExample)

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Also Published As

Publication number Publication date
KR20140016924A (ko) 2014-02-10
WO2012121081A1 (ja) 2012-09-13
EP2685489A4 (en) 2014-09-24
US20140005991A1 (en) 2014-01-02
KR101588691B1 (ko) 2016-01-27
EP2685489A1 (en) 2014-01-15
TW201239983A (en) 2012-10-01
JP2012186394A (ja) 2012-09-27
TWI529801B (zh) 2016-04-11

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