WO2012121081A1 - プラズマプロセスによる加工形状の予測シミュレーション装置とシミュレーションの方法及びプログラム - Google Patents
プラズマプロセスによる加工形状の予測シミュレーション装置とシミュレーションの方法及びプログラム Download PDFInfo
- Publication number
- WO2012121081A1 WO2012121081A1 PCT/JP2012/055091 JP2012055091W WO2012121081A1 WO 2012121081 A1 WO2012121081 A1 WO 2012121081A1 JP 2012055091 W JP2012055091 W JP 2012055091W WO 2012121081 A1 WO2012121081 A1 WO 2012121081A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- movement amount
- etching
- surface movement
- conditions
- deposition
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 239
- 230000008569 process Effects 0.000 title claims abstract description 220
- 238000004088 simulation Methods 0.000 title claims abstract description 62
- 238000005530 etching Methods 0.000 claims abstract description 162
- 238000004364 calculation method Methods 0.000 claims abstract description 109
- 238000005137 deposition process Methods 0.000 claims abstract description 72
- 230000008021 deposition Effects 0.000 claims abstract description 55
- 238000001020 plasma etching Methods 0.000 claims abstract description 10
- 238000006243 chemical reaction Methods 0.000 claims description 85
- 150000002500 ions Chemical class 0.000 claims description 54
- 238000003754 machining Methods 0.000 claims description 38
- 230000004907 flux Effects 0.000 claims description 33
- 239000002245 particle Substances 0.000 claims description 27
- 230000005684 electric field Effects 0.000 claims description 17
- 238000009623 Bosch process Methods 0.000 abstract description 22
- 238000000151 deposition Methods 0.000 description 49
- 150000003254 radicals Chemical class 0.000 description 39
- 239000000463 material Substances 0.000 description 24
- 230000001681 protective effect Effects 0.000 description 20
- 238000001179 sorption measurement Methods 0.000 description 20
- 239000000758 substrate Substances 0.000 description 20
- 230000005284 excitation Effects 0.000 description 11
- 238000006557 surface reaction Methods 0.000 description 10
- 239000007795 chemical reaction product Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 230000004913 activation Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 230000007935 neutral effect Effects 0.000 description 5
- 238000009825 accumulation Methods 0.000 description 4
- 241000894007 species Species 0.000 description 4
- 238000003795 desorption Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 241000237509 Patinopecten sp. Species 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 235000020637 scallop Nutrition 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/20—Design optimisation, verification or simulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
Definitions
- the present invention relates to a machining shape prediction simulation apparatus, a simulation method, and a program for predicting a machining shape of a workpiece to be machined by a plasma process.
- One of the technologies for microfabrication of semiconductors is a plasma etching process.
- semiconductor microfabrication technology there is a Bosch process for vertically etching a semiconductor substrate (see, for example, Patent Document 1).
- a deposition process for forming a protective film on the processed surface and an etching process for further etching the substrate by removing the protective film formed on the bottom surface of the processed surface are defined as one cycle, and the cycle is divided into a plurality of cycles. Do it once.
- a high frequency power source is used as a plasma generation source
- an object to be processed is installed in a chamber exhausted by a vacuum pump, and a gas containing a reactive gas flows into the chamber from a gas inlet.
- the gas is decomposed by a plasma generation source to be turned into plasma.
- a bias power such as direct current, alternating current, and high frequency is applied to the object to be processed to adjust the amount and energy of ions incident on the object to be processed.
- different gas mixtures are repeatedly used in the deposition process and the etching process.
- C 4 F 8 plasma is generated in the deposition process and protective films are formed on the bottom and side surfaces of the holes, and SF 6 plasma is generated in the etching process.
- the etching process is divided into a plurality of stages. First, the protective film formed on the bottom surface of the hole is removed from the protective film formed by the deposition process, and then the removed Si substrate is etched. By repeating this deposition process and etching process as one cycle, the spread of etching in the lateral direction of the Si substrate is suppressed, and a hole extending deep in the depth direction is formed while maintaining a vertical side surface. It is.
- a simulation apparatus for predicting a processing shape of a processing object by a plasma process is: Condition setting means for setting conditions relating to the processing object, process conditions including the number of cycles when the etching process and the deposition process are defined as one cycle, and conditions relating to simulation; A flux information database storing data relating to the energy distribution and / or irradiation angle distribution of the flux irradiated to the processing surface of the processing object; A chemical reaction database storing chemical reaction data in the etching and deposition processes; A trajectory calculating means for calculating the electric field distribution generated by the charge distribution on the processing surface and calculating the trajectory of the charged particles incident on the processing surface; Based on the charged particle trajectory obtained by the trajectory calculation means, various ions incident on the machining surface are obtained, and the reaction calculation in each region of the machining surface is performed using the data stored in the flux information database and chemical reaction database, and etching is performed.
- a rate calculation means for determining a rate and a deposition rate;
- Surface movement amount calculation means for calculating the surface movement amount from the difference between the etching rate and the deposition rate obtained by the rate calculation means; Based on the conditions related to the workpiece to be processed and the conditions related to the simulation set by the condition setting means, the surface movement amount is calculated by the surface movement amount calculation means according to the etching process conditions set by the condition setting means, and the condition setting means Calculation control means for repeatedly calculating the surface movement amount by the surface movement amount calculation means according to the conditions of the set deposition process; Is provided.
- the machining shape prediction simulation method by the plasma process of the present invention is: A condition setting step for setting conditions relating to the processing object, process conditions including the number of cycles when the etching process and the deposition process are defined as one cycle, and conditions relating to simulation; An etching process surface movement amount calculating step for calculating a surface movement amount by plasma etching based on an etching process condition; A deposition process surface movement amount calculating step for calculating a surface movement amount by plasma deposition based on the conditions of the deposition process; With The shape formed by repeating the etching process surface movement amount calculation step and the deposition process surface movement amount calculation step with the number of cycles set in the condition setting step is obtained.
- a machining shape prediction simulation program by the plasma process of the present invention is: A condition setting step for setting conditions relating to the object to be processed, conditions in the process including the number of cycles when the etching process and the deposition process are defined as one cycle, and conditions relating to simulation; An etching process surface movement amount calculating step for calculating a surface movement amount by plasma etching based on an etching process condition; A deposition process surface movement amount calculating step for calculating a surface movement amount by plasma deposition based on the conditions of the deposition process; With The shape formed by repeating the etching process surface movement amount calculation step and the deposition process surface movement amount calculation step with the number of cycles set in the condition setting step is obtained.
- the present invention it is possible to predict a processing shape by a Bosch process, which makes it easy to set conditions for an etching process for removing a protective film by a deposition process, and to easily search for optimum conditions for the Bosch process. Can be done.
- FIG. 1 It is a block diagram of the prediction simulation apparatus of the process shape by the plasma process which concerns on embodiment of this invention. It is a figure which shows typically the mode of the process of the substrate surface by plasma etching. It is a figure which shows the outline of the flow of the general calculation of a process surface shape. It is a figure explaining the method of expressing a processing surface two-dimensionally. It is a figure which shows typically the shape change calculated
- FIG. 1 It is a figure which shows the second half of the flow shown in FIG. It is a flowchart which shows the search of optimal conditions using the prediction simulation apparatus of the process shape by the plasma process which concerns on embodiment of this invention. It is a time chart of the process which shows the modification of embodiment of this invention and is set in the condition setting means of FIG. It is sectional drawing of the hole estimated by the simulation simulation apparatus of the process shape by the plasma process which concerns on embodiment of this invention, (A) shows the result of the shape prediction at the time of setting an etching process in one step, (B) These are figures which show the result of the shape prediction at the time of setting an etching process in two steps.
- the simulation realized in the embodiment of the present invention is a semiconductor substrate such as Si itself or a substrate in which various films such as an insulating film and a metal film are stacked (hereinafter simply referred to as “processing object”).
- processing object various films such as an insulating film and a metal film are stacked.
- the shape of the hole and its size are predicted by repeating the plurality of cycles with the etching process and the deposition process as one cycle after the mask is disposed on the mask. Thereby, the cross-sectional shape of a hole, the shape of the depth direction of a hole, and those dimensions are estimated.
- This process itself is called a Bosch process and is a known processing technique.
- a protective film is formed by a deposition process so that when the holes are dug by the etching process, the side surfaces of the holes are not etched to increase the diameter of the holes.
- the etching process includes a process of removing the protective film formed on the bottom surface of the hole by the deposition process (hereinafter simply referred to as “first etching process”) and a deepening of the hole after removing the protective film on the bottom surface of the hole. It is roughly divided into processes (hereinafter referred to as “second etching process”).
- first etching process for example, SF 6 plasma is used, and the bias power applied to the stage on which the object to be processed is placed is large in order to remove the protective film at the bottom.
- the second etching process for example, even if the same SF 6 plasma is used, the bias power applied to the stage is reduced. This is thought to be because the protective film on the side wall of the hole formed by the deposition process is difficult to remove because the hole is deeply dug in the second etching process.
- condition setting means 11 the process time, gas type, gas pressure, gas flow rate, processing target object for each etching process in each of the first etching process and the second etching process in the above-described example.
- One or more of temperature and bias power are set as parameters.
- the bias power refers to power such as direct current, low frequency, and high frequency applied to a stage on which a processing target is placed, for example.
- the above-mentioned parameters are changed and set for each etching process.
- Each etching process may be made up of one etching process without changing each etching process. Etching may consist of three or more etching processes per cycle.
- the process conditions in the deposition process may be set using one or more of process time, gas type, gas pressure, gas flow rate, processing object temperature and bias power as parameters, as in the etching process. Absent. Therefore, the process consists of an etching process with one or more process conditions and a deposition process with one or more process conditions per cycle, and within each process of the etching process and the deposition process with each cycle. The number of process conditions may be the same or different.
- FIG. 1 is a configuration diagram of a machining shape prediction simulation apparatus 10 using a plasma process according to an embodiment of the present invention.
- a machining shape prediction simulation apparatus 10 includes a condition setting unit 11, a flux information database 12, a chemical reaction database 13, a trajectory calculation unit 14, a rate calculation unit 15, and a surface movement amount calculation unit 16. And a calculation control means 17.
- the prediction simulation apparatus 10 may realize each element of the apparatus by executing a machining shape prediction simulation program by a plasma process on a computer. For this reason, the processing shape prediction simulation program by the plasma process may be stored in a computer-readable recording medium.
- the program is an instruction to the computer and is combined so that one result can be obtained.
- the prediction simulation apparatus performs a simulation start command, a command necessary for displaying the simulation result, an input command to the condition setting unit 11, and the like to display the simulation result. It has an input / output unit equipped with a display.
- the condition setting means 11 is for setting various conditions.
- Examples of the various conditions include a condition of a processing object, a process condition, and a simulation condition.
- Examples of the condition items related to the processing target include shapes and dimensions of the processing target to be deeply drilled and masks, and the conditions related to the processing target include boundary conditions.
- Conditions relating to the process include etching conditions, deposition conditions, the number of cycles, and the like.
- the items of etching conditions and deposition conditions include process time, gas type, gas pressure, gas flow rate, temperature of processing object, bias power, and the like.
- the etching conditions and deposition conditions do not need to be fixed within one cycle, and different etching conditions and deposition conditions may be set in one cycle.
- the number of etching conditions and the number of deposition conditions in one cycle may be arbitrarily set according to the cycle order, or may be arbitrarily set regardless of the cycle order. Details of the conditions regarding the simulation will be described later, and there are a mesh, a time step size, a number of string divisions, and the like.
- the flux information database 12 stores data relating to the flux irradiated to the processing surface. Since there are charged particles and radicals in the flux, data is stored separately. Data items relating to the flux of charged particles include ion species, energy distribution and angular distribution, and intensity. Depending on the process-related conditions set by the condition setting means 11, for example, there are data relating to the energy distribution, angular distribution, intensity, etc. of charged particles fluxes of various ions and electrons such as Cl 2 + and SF 5 + . There is a result of the angular distribution of ion flux obtained by the trajectory calculation means 14. Data items related to radical flux include radical species, energy distribution and angular distribution, and intensity. Depending on the process-related conditions set by the condition setting means 11, for example, there are data relating to the energy distribution, angular distribution, intensity, etc. of various radical fluxes such as CF 3 * , F * , O * .
- the chemical reaction database 13 stores chemical reaction data in each process of etching and deposition.
- the chemical reaction data includes data required for the trajectory calculation by the trajectory calculation means 14 and data required for the reaction calculation by the surface movement amount calculation means 16. Therefore, the chemical reaction database 13 stores material property data and surface reaction data.
- the orbital calculation means 14 performs analysis using Poisson's equation or Newton's equation of motion
- data such as the dielectric constant, conductivity, ion species, and electron mass of each material is stored in the chemical reaction database 13. Yes.
- the surface transfer amount calculation means 16 performs radical adsorption reaction calculation, ion reaction calculation and thermal excitation type chemical reaction calculation, various coefficients required for each calculation are stored in the chemical reaction database 13.
- the surface movement amount calculation means 16 requires data on the reaction formula, radical and ion adsorption rate, desorption rate, activation energy, angular distribution and energy distribution when the reaction product is re-emitted from the surface. These data are also stored in the chemical reaction database 13.
- reaction formula stored in the chemical reaction database 13 will be described.
- chemical reactions in the etching process include the following.
- SFx + + SiF 4 ⁇ F (2) * Can be mentioned.
- the evaporated product SiF 4 on the processing surface is subjected to an etching reaction by the ions SFx + to release the reaction product F (2) * .
- the value of the withdrawal rate is set as a function of energy and angle or as a constant not depending on these.
- (2) in F (2) * is a symbol for distinguishing from F * not illustrated here.
- F (2) * + Si ⁇ Si (2) can be mentioned.
- Neutral particle radical F (2) * reacts with Si on the processed surface to produce evaporate Si (2).
- the value of the adsorption rate is set as a function of energy and angle or as a constant not depending on these.
- (2) in Si (2) is a symbol for distinguishing from Si not illustrated here.
- SiF 4 (s) ⁇ SiF 4 (g) can be mentioned.
- SiF 4 (s) on the processed surface is released as SiF 4 (g) by thermal excitation.
- Each value of the reaction coefficient and the activation energy is set as a function of energy or angle or as a constant not depending on these.
- C x F y * + Si ⁇ Si_c can be mentioned.
- the value of the adsorption rate is set as a function of energy and angle or as a constant not depending on these.
- the material property data includes particle number density such as atomic number density and molecular number density, adsorption site surface density, and relative dielectric constant. Rate, extinction factor, conductivity of conductive material, electrical properties (eg, distinction between conductor and insulator), light absorption coefficient for each wavelength, defect generation coefficient for each wavelength, etc.
- material means a reaction product or a material that forms a substrate material.
- the surface reaction data includes data on a neutral particle adsorption model, an ion reaction model, and a thermal excitation type chemical reaction model.
- the data items related to the neutral particle adsorption reaction model include the name of the reaction product by the adsorption reaction, the adsorption rate for each incident radical and reaction product, the angle dependency of radical adsorption, the radical reflectance, and the like.
- Data items related to the ion reaction model include a combination of a substrate material or a reaction product name in which an ion assist reaction occurs and an ion name, a separation rate, a reaction rate of the ion assist reaction, and the like.
- Data items related to the thermal excitation type chemical reaction model include a reaction coefficient of the thermal excitation type chemical reaction, activation energy, and the like.
- the trajectory calculating means 14 calculates the trajectory of the charged particles required in the rate calculating means 15 and is based on the density and energy distribution of electrons or ions incident on the processing surface and the charge distribution on the processing surface. Obtain the trajectory of the charged particles incident on the machining surface.
- the trajectory calculation means 14 is set by the condition setting means 11 or updated by the calculation by the trajectory calculation means 14, and the radical conditions input to the flux information database 12 or updated,
- the potential distribution is calculated based on the type and density of the ions, the physical properties of the material such as the dielectric constant and conductivity, the ion species, the mass of the atoms, and the like input to the chemical reaction database 13, and the electrons flowing into the substrate and Calculate each ion trajectory.
- the electric field generated by the charge accumulation distribution is calculated by solving Poisson's equation from the charge accumulation distribution on the processing surface. Thereafter, the trajectory of the charged particles flowing into the substrate surface is calculated from the electric field distribution.
- the ion flux distribution is determined as a function of energy and angle. These values may be stored in the flux information database 12 and used in the calculation by the rate calculation means 15.
- the rate calculation means 15 performs a reaction calculation in each region of the processing surface based on each data stored in the flux information database 12 and the chemical reaction database 13, or the charged particle trajectory obtained by the trajectory calculation means 14.
- the reaction calculation in each region of the processed surface is performed based on the types and amounts of various ions incident on the processed surface. Thereby, an etching rate and a deposition rate are obtained.
- the rate calculation means 15 performs etching at each point on the processing surface based on radicals flowing from the plasma, each flux density of ions, the probability of adsorption to the surface of the object to be processed, the chemical reaction rate, the reflectance, and the like. Find rates and deposition rates.
- the surface movement amount calculation means 16 calculates the movement amount of the surface from the difference between the etching rate and the deposition rate obtained by the rate calculation means 15, and calculates, for example, a change in the cross-sectional shape of the wafer over time. Details of the calculation will be described later.
- the rate calculation means 15 and the surface movement amount calculation means 16 refer to the data stored in the chemical reaction database 13 based on the calculation result by the trajectory calculation means 14, and carry out radical adsorption reaction, ion assist reaction, thermal excitation type. The amount of surface movement due to the chemical reaction is calculated.
- the calculation control means 17 repeats the following two calculation processes based on the conditions related to the simulation set by the condition setting means 11.
- the surface movement amount calculation unit 16 calculates the surface movement amount according to the process conditions in the etching process set by the condition setting unit 11.
- the surface movement amount is calculated by the surface movement amount calculation means 16 in accordance with the process conditions in the deposition process set by the condition setting means 11. The number of repetitions is determined by the number of cycles set as a condition relating to the process of the condition setting unit 11.
- the condition setting means 11 sets in advance conditions related to the processing object, process conditions, and simulation conditions.
- the calculation control means 17 obtains the etching amount by etching and the deposition amount by deposition by the surface movement amount calculation means 16 while using the trajectory calculation means 14 and the rate calculation means 15. At that time, each data stored in the flux information database 12 and the chemical reaction database 13 is referred to.
- the calculation control means 17 causes the surface movement amount according to the conditions set in the condition setting means 11.
- the calculation means 16 is controlled. Thereby, the surface movement amount is calculated in the order of the etching process conditions for each cycle. If the parameter is one or more of process time, gas type, gas pressure, gas flow rate, processing object temperature, and bias power, it is not necessary to be a set of etching time and bias power as process time.
- FIG. 2 is a diagram schematically showing how the substrate surface is processed by plasma etching.
- the outline of the substrate surface is indicated by discrete black dots ( ⁇ ), and the lines are connected by straight lines. This straight line is called a string.
- radicals or ions are incident on the surface, chemical reaction or sputtering occurs on the surface, and radicals are adsorbed or separated from the substrate surface. These are expressed as a deposition rate and an etching rate, and an etching rate or a film forming rate is obtained from the difference between them, and the string is moved.
- a two-dimensional case will be described, but the same applies to a three-dimensional case.
- the direction of movement by the string is merely reversed in the schematic diagram shown in FIG.
- FIG. 3 is a diagram showing an outline of a general calculation flow of the processed surface shape.
- the resist surface indicated by a solid line is divided by string points (generally “points on the processing surface”), and adjacent string points are separated by strings (generally “elements”) as indicated by dotted lines.
- string points generally “points on the processing surface”
- strings generally “elements”
- an etching rate and a deposition rate are calculated (STEP 1-2).
- the etching rate is calculated as the sum of the etching rate by the thermal excitation type chemical reaction, the etching rate by the physical sputtering, and the etching rate by the ion assist reaction.
- the deposition rate is calculated as the sum of the deposition rate due to the effect of deposits falling down, the deposition rate due to the formation of deposits, and the deposition rate due to the ion assist reaction.
- Etching by plasma and deposition rate are obtained as follows (Non-Patent Document 1).
- etching rate ER is decomposed as shown in Equation (5).
- ER total is a thermal excitation type chemical reaction etching rate on the surface coated with the adsorbed radical
- ER physical is an etching rate by physical sputtering on a clean material surface to be etched by high energy ions
- ER ionassisted is The etching rate by high-energy ions and the etching rate by physical and chemical sputtering (also referred to as “ion-assisted reaction”) on the surface covered with the adsorbed radical.
- the etching rates ER thermal , ER physical and ER ionassisted can be determined as follows.
- the thermal excitation type chemical reaction etching rate ER thermal at the point P is expressed by Equation (6).
- ER physical is the sum for ion i of both reactive and non-reactive ions.
- the etching rate ER ionassisted by the ion assist reaction at the point P is expressed by the equation (8).
- the deposition rate DR can be decomposed as shown in equation (9).
- the first term on the right side of Equation (9) is the deposition rate due to the effect of deposits.
- the second term of the equation (9) is a deposition rate due to the effect that the incident radical and the radical in the surface reaction layer react to generate a deposit.
- the third term of the equation (9) is a deposition rate due to the effect of deposits separating from the surface reaction layer by the ion-assisted reaction.
- ⁇ d is the density of the deposition layer
- ⁇ m0 ( ⁇ ) is the adsorption rate between the radical m and the clean material to be etched
- ⁇ mk ( ⁇ ) is the radical m and the material to be etched. It is an adsorption rate between the adsorption layer film of the radical k formed on the film.
- ⁇ is the energy of radical m.
- the reaction in which ions having energy ⁇ are incident at the point P and the deposit is detached from the surface reaction layer is generally called an ion assist reaction.
- the deposition rate based on the effect of the ion assist reaction is expressed by the equation (12). Indicated.
- the moving speed of each string P is obtained (STEP 1-3). That is, from the difference between the etching rate and the deposition rate, if the etching rate is greater than the deposition rate, the etching proceeds. Conversely, if the deposition rate is greater than the etching rate, the deposition proceeds. Then, by connecting string points that describe the surface at an arbitrary time, the surface moving speed can be obtained, the shape of the substrate surface at the arbitrary time can be obtained, and the result about the shape can be output and displayed (STEP 1-4). FIG. 5 shows the shape change thus obtained.
- FIG. 6 is a schematic diagram of a flow of a machining shape prediction simulation method realized by a machining shape prediction simulation program by a plasma process according to an embodiment of the present invention.
- the process shape prediction simulation method by the plasma process includes conditions relating to the object to be processed, conditions in each process including the number of cycles when the etching process and the deposition process are defined as one cycle, and simulation.
- the shape to be formed is predicted by repeating the etching process surface movement amount calculating step STEP12 and the deposition process surface movement amount calculating step STEP13 until a predetermined number of cycles, that is, YES in STEP14.
- FIG. 7 is a diagram showing the first half of the detailed flow of the process shape prediction simulation method by the plasma process shown in FIG. 6, and FIG. 8 is a diagram showing the second half of the flow shown in FIG.
- STEP 11-1 as the conditions regarding the processing object, the shape and dimensions of the processing object, the mask, etc. are set together with the material of the processing object, including the boundary conditions.
- an etching process condition and a deposition process condition in the Bosch process are set.
- the time ratio between the etching process and the deposition process in one cycle or each time, the process for removing the protective film at the bottom of the hole in the etching process and the hole bottom after removing the protective film The time ratio with the process for digging or the time, the number of cycles, and the number of repetitions of one cycle of the process for digging holes are set. At this time, the presence / absence and magnitude of application of bias power are also set.
- each radical data item is set according to the process conditions set in STEP 11-2.
- the angular distribution and energy distribution when the reaction product is re-emitted from the surface are also set.
- the chemical reaction in each process of etching and deposition is set. Specifically, referring to the chemical reaction database 13, the reaction of the material property data and the data on the surface reaction corresponding to the type of processing object and the gas type set in STEP 11-1 and STEP 11-2 are performed. Get the formula, radical and ion adsorption rate, desorption rate, activation energy, etc.
- mesh, time step size, number of string divisions, etc. are set as conditions for simulation.
- the region of the substrate to be processed is divided into a plurality of elements (mesh), and the material type is set for the element corresponding to the region of the substrate.
- the region of the processing surface is determined by setting the region of the part to be a mask.
- the surface element (string in the case of two dimensions) is set as a simulation target, and the process proceeds to a cycle loop.
- each simulation of the etching process and the deposition process is performed in order.
- the trajectory calculation step is performed by repeating the calculation of the electric field distribution and the trajectory calculation of the charged particles until the steady state is reached (STEP 12-1). First, trajectory calculation and ion flux distribution are set.
- the trajectory calculation is input to the trajectory calculation means 14 by the condition setting means 11 or updated by the calculation by the trajectory calculation means 14, and is input to or updated in the flux information database 12.
- the potential distribution is calculated based on the type and density of the radicals and ions, the physical properties of the material such as the dielectric constant and conductivity, the ion species, the mass of the atoms, and the like input to the chemical reaction database 13. .
- the electric field distribution is obtained by solving Poisson's equation with the charge accumulation amount on the processing surface as a boundary condition, and each trajectory of ions and electrons is calculated by Newton's equation of motion. Since the electric field distribution is required, the velocity and traveling direction of ions and electrons can be accurately determined in consideration of the acceleration of charged particles due to this potential difference.
- the charge distribution on the machining surface is obtained on the assumption that incident ions and electrons have reached the machining surface, and the Poisson equation is solved using the amount of charge accumulation at each point on the machining surface as a boundary condition. Calculate the electric field distribution. Furthermore, the trajectory of each charged particle containing ions and electrons is obtained by Newton's equation of motion from the electric field distribution.
- STEP12-1B it is determined whether or not the electric field distribution obtained this time is almost the same as the electric field distribution obtained last time. If it cannot be determined that the electric field distribution is within the same range, each ion, Assuming that electrons flow in, a new charge distribution is calculated (STEP 12-1C), and the process returns to STEP 12-1A.
- the electric field distribution obtained by STEP12-1A is almost the same as the electric field distribution obtained last time, that is, when it is determined that the electric field distribution has converged, the electric field distribution on the processing surface becomes steady. And based on velocity, it can be set as a function of angle and energy for ions incident on each point on the work surface. As a statistic, it is preferable to perform a trajectory calculation with a sufficient amount to reduce the variation. Further, when a function already stored in the flux information database 12 can be used, the trajectory calculation means 14 may use the function.
- the rate calculation means 15 refers to the trajectory of the charged particles obtained in STEP 12-1 and the flux information database 12 according to the input conditions.
- the following reaction is calculated from the incident distribution input as. First, all types of particles involved in surface reactions, such as charged particles and radicals that are incident on the processing surface from the outside and are adsorbed on the processing surface, and the adsorbed charged particles and radicals are detached from the processing surface. Each time, incident energy, incident angle, etc. are set. Then, based on each reaction coefficient at each point on the processing surface, each etching rate and deposition are determined from the incident flux distribution of ions and radicals incident on each point on the processing surface along the trajectory obtained in the trajectory calculation step. Calculate the rate.
- the movement amount of the surface is calculated from the difference between the etching rate and the deposition rate on each processed surface.
- the calculation of the surface movement amount obtained in STEP 12-2 and STEP 12-3 will be described in detail.
- STEP12-2 based on the flux conditions set in STEP11-3 and the reaction coefficients set in STEP11-4, the reaction between the surface material and radicals and / or the reaction between the surface material and ions is calculated on each processed surface. The process is repeated until the coverage of each material reaches a steady state. Thereby, an etching rate and a deposition rate are obtained, respectively.
- the etching rate is obtained as the sum of the etching rates by each of the thermal excitation type chemical reaction, physical sputtering, and ion assist reaction as in the above-described formula (5).
- the deposition rate is obtained as the sum of the deposition rates due to the effect of deposits falling, the generation of deposits, and the ion assist reaction, as in the above-described equation (9).
- the movement transition of the processed surface is calculated by calculating each rate taking into account each coefficient for each reaction.
- the movement amount of the processing surface is calculated from the difference between the etching rate and the deposition rate.
- STEP 12-4 whether or not the processing amount or processing time set in the processing conditions is satisfied from the moving speed at each point of the processing surface obtained by the calculation processing of the surface movement amount in STEP 12-3. If the condition is not satisfied and the condition is not satisfied, the process returns to STEP 12-1 to newly set each point on the processing surface and return to the trajectory calculation step. That is, if the etching amount obtained in STEP 12-3 has not reached the set etching amount, the process of newly setting each surface point and returning to STEP 12-1 is repeated. On the other hand, if the etching amount obtained in STEP 12-3 has reached the set etching amount, the etching process loops out and the process proceeds to the deposition process. Note that the repetition of the loop processing may be determined not by the etching amount but by the etching time.
- the same calculation as the etching process simulation (STEP 12) is performed in the deposition process simulation (STEP 13). That is, in the deposition process, the electric field distribution calculation and the charged particle trajectory calculation are repeated until the steady state is reached (STEP 13-1).
- the trajectory calculating means 14 repeatedly performs STEP 13-1C and STEP 13-1A until “Yes” is obtained in STEP 13-1A and STEP 13-1B.
- the rate calculation means 15 is incident on each point on the processing surface along the trajectory obtained in the trajectory calculation step (STEP 13-1) based on each reaction coefficient at each point on the processing surface. Etching rate and deposition rate are calculated from the incident flux distribution of ions and radicals.
- the reaction is calculated from the charged particle trajectory obtained in STEP 13-1 and the incident distribution by the same calculation method as in the etching process.
- the incident distribution energy and angle are input as parameters for each radical species by referring to the flux information database 12 according to the input conditions.
- STEP 13-3 the surface movement amount is calculated from the difference between the etching rate and the deposition rate obtained in STEP 13-2. Then, as STEP 13-4, the process returns to STEP 13-1 until the deposition process is completed.
- the process returns to STEP 12 until the number of cycles set in the Bosch process condition setting (STEP 11-2) is calculated for each of the etching process and the deposition process.
- Etching process surface movement amount calculation step for calculating surface movement amount by plasma etching based on conditions in etching process
- deposition process surface movement amount for calculating surface movement amount by plasma deposition based on conditions in deposition process A calculation step.
- the shape formed by repeating the etching process surface movement amount calculation step and the deposition process surface movement amount calculation step for the number of cycles set in the condition setting step is obtained. Therefore, the processing shape formed by the Bosch process can be easily predicted.
- the processing shape by the Bosch process can be predicted, so that it is possible to set the etching process condition for removing the protective film formed by the deposition process and search for the optimum condition of the Bosch process. It becomes easy.
- FIG. 9 is a flowchart when searching for the optimum condition using the machining shape prediction simulation apparatus 10 by the plasma process according to the embodiment of the present invention.
- the time required for removing the film deposited on the bottom of the hole in the protective film formed by the deposition process by the etching process is simulated.
- the deposition time of the protective film in the deposition process is set as a fixed value, and a plurality of etching process time values are set, and Bosch is set according to the flow shown in FIGS. 7 and 8 for each of the set etching process times.
- the process is simulated (STEP 21A).
- the time required to remove the protective film at the bottom of the hole is estimated from these results (STEP 21B). Thereby, it is possible to predict the time required to remove the protective film deposited by the deposition process in a certain time and in the region of the bottom of the hole.
- the optimum condition search step by the Bosch process is performed.
- the etching process is divided into an etching process (first etching process) for removing the protective film at the bottom of the hole and an etching process (second etching process) for digging holes thereafter.
- the time obtained in STEP 21 is set as the time for removing the protective film at the bottom of the hole in the first etching process (STEP 22A).
- the Bosch process is simulated according to the flow shown in FIGS. 7 and 8 using the etching time and RF bias power in the second etching process as parameters (STEP 22B).
- a plurality of parameter values and simulating the Bosch process it is possible to search for optimum conditions. For example, it is possible to determine whether or not the shape is optimum from the predicted machining shape, that is, the scallop state, the hole width, and the depth of the machining hole (STEP 22C).
- FIG. 10 shows a modification of the embodiment of the present invention, and is a time chart of a process set in the condition setting means 11 in FIG.
- the horizontal axis represents time
- the vertical axis represents applied bias power.
- (A) is a version in which one deposition process and one etching process are set to process times T1 and T2 in one cycle, respectively, and the conditions set in each cycle are not changed.
- (B) is a version in which one deposition process and two etching processes are set at process times T11, T21, and T22 in one cycle, respectively, and the conditions set in each cycle are not changed.
- FIG. 11 is a cross-sectional view of a hole predicted by a processing shape prediction simulation apparatus using a plasma process according to an embodiment of the present invention.
- FIG. 11A shows the result of shape prediction when the etching process is set in one stage.
- (B) is a figure which shows the result of the shape prediction at the time of setting an etching process in two steps.
- FIG. 10A is a time chart shown in FIG. 10A
- FIG. 10B is a time chart shown in FIG. Since the processing time for each cycle is the same in each of (A) and (B), it can be seen that the same depth is cut. Further, since the process conditions related to etching and the process conditions related to deposition in each cycle are the same in each of (A) and (B), it can be seen that the shapes to be dug in each cycle are the same.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Evolutionary Computation (AREA)
- General Engineering & Computer Science (AREA)
- Geometry (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
Description
加工処理対象物に関する条件と、エッチングプロセスとデポジションプロセスとを一サイクルとした際のサイクル数を含むプロセス条件と、シミュレーションに関する条件と、を設定する条件設定手段と;
加工処理対象物の加工表面に照射されるフラックスのエネルギー分布及び/又は照射角度分布に関するデータを格納したフラックス情報データベースと;
エッチング及びデポジションの各プロセスにおける化学反応データを格納した化学反応データベースと;、
加工表面における電荷分布により生じる電界分布を計算し加工表面に入射する荷電粒子の軌道を求める軌道計算手段と;
軌道計算手段で求まる荷電粒子の軌道に基づいて加工表面に入射する各種イオンを求め、フラックス情報データベース及び化学反応データベースに格納されているデータを用いて加工表面の各領域における反応計算を行い、エッチングレート及びデポジションレートを求めるレート計算手段と;
レート計算手段で求まるエッチングレートとデポジションレートとの差分から表面移動量を算出する表面移動量計算手段と;
条件設定手段により設定される加工処理対象物に関する条件及びシミュレーションに関する条件に基づいて、条件設定手段により設定されるエッチングプロセスの条件に従って表面移動量計算手段による表面移動量の算出と、条件設定手段により設定されるデポジションプロセスの条件に従って表面移動量計算手段による表面移動量の算出と、を繰り返す計算制御手段と;
を備える。
加工処理対象物に関する条件、エッチングプロセスとデポジションプロセスとを一サイクルとした際のサイクル数を含むプロセス条件及びシミュレーションに関する条件を設定する条件設定ステップと;
エッチングプロセスの条件に基づいたプラズマエッチングによる表面移動量を計算するエッチングプロセス表面移動量計算ステップと;
デポジションプロセスの条件に基づいたプラズマデポジションによる表面移動量を計算するデポジションプロセス表面移動量計算ステップと;
を備え、
エッチングプロセス表面移動量計算ステップとデポジションプロセス表面移動量計算ステップとを条件設定ステップにて設定されたサイクル数で繰り返すことにより形成される形状を求める。
加工処理対象物に関する条件、エッチングプロセスとデポジションプロセスとを一サイクルとした際のサイクル数を含むプロセスにおける条件及びシミュレーションに関する条件を設定する条件設定ステップと;
エッチングプロセスの条件に基づいたプラズマエッチングによる表面移動量を計算するエッチングプロセス表面移動量計算ステップと;
デポジションプロセスの条件に基づいたプラズマデポジションによる表面移動量を計算するデポジションプロセス表面移動量計算ステップと;
を備え、
エッチングプロセス表面移動量計算ステップとデポジションプロセス表面移動量計算ステップとを条件設定ステップにて設定されたサイクル数で繰り返すことにより形成される形状を求める。
本発明の実施形態で実現されるシミュレーションは、Siなどの半導体の基板それ自体又は基板上に絶縁膜、金属膜などの各種の膜が積層されたもの(以下、単に、「加工処理対象物」と呼ぶ。)にマスクを配置した上でエッチングプロセスとデポジションプロセスとを1サイクルとし複数回のサイクルを繰り返すことにより形成される孔の形状とその寸法を予測するものである。これにより、孔の断面形状、孔の深さ方向の形状、それらの寸法が予測される。このプロセスそのものはボッシュプロセスと呼ばれ、公知の加工技術である。ボッシュプロセスでは、エッチングプロセスにより孔が掘り進められる際に孔の側面がエッチングされて孔の径が広がらないように、デポジションプロセスにより保護膜が形成される。
図1は本発明の実施形態に係るプラズマプロセスによる加工形状の予測シミュレーション装置10の構成図である。本発明の実施形態に係るプラズマプロセスによる加工形状の予測シミュレーション装置10は、条件設定手段11とフラックス情報データベース12と化学反応データベース13と軌道計算手段14とレート計算手段15と表面移動量計算手段16と計算制御手段17とを備える。この予測シミュレーション装置10は、コンピュータ上で、プラズマプロセスによる加工形状の予測シミュレーションプログラムを実行することによってこの装置の各要素を実現してもよい。このため、プラズマプロセスによる加工形状の予測シミュレーションプログラムは、コンピュータが読み取り可能な記録媒体に格納されてもよい。ここで、プログラムとは、コンピュータに対する指令であって一の結果を得ることができるように組み合わされたものである。図1には示されていないが、上記予測シミュレーション装置は、シミュレーションの開始指令、シミュレーションの結果の表示に必要な指令、条件設定手段11に対する入力指令などを行うと共にシミュレーションの結果を表示するためのディスプレイを備えた入出力部などを備える。
条件設定手段11は各種条件を設定するためのものである。各種条件としては、加工処理対象物の条件、プロセスに関する条件及びシミュレーションに関する条件が挙げられる。
加工処理対象物に関する条件の項目としては、深掘される加工処理対象物やマスクなどの形状及び寸法などが挙げられ、加工処理対象物に関する条件には境界条件が含まれる。
プロセスに関する条件には、エッチング条件、デポジション条件、サイクル数などが含まれる。エッチング条件、デポジション条件の項目は、何れも、プロセス時間、ガス種、ガス圧、ガス流量、加工処理対象物の温度及びバイアスパワーなどが挙げられる。エッチング条件、デポジション条件は、一サイクル内で固定される必要はなく、一サイクル中で異なったエッチング条件、デポジション条件が設定されてもよい。一サイクル中でのエッチング条件の数、デポジション条件の数は、サイクルの順番に応じて任意に設定されてもよいし、サイクルの順番に拠らず任意に設定されてもよい。
シミュレーションに関する条件の詳細については後述するが、メッシュ、時間刻み幅、ストリング分割数などがある。
荷電粒子のフラックスに関するデータ項目としては、イオン種、エネルギー分布及び角度分布、強度などがある。条件設定手段11で設定されるプロセスに関する条件に応じて、例えば、Cl2 +、SF5 +などの各種イオンや電子の荷電粒子フラックスのエネルギー分布、角度分布、強度などに関するデータがある。軌道計算手段14により求められるイオンフラックスの角度分布の結果がある。
ラジカルフラックスに関するデータ項目としては、ラジカル種、エネルギー分布及び角度分布、強度などがある。条件設定手段11で設定されるプロセスに関する条件に応じて、例えば、CF3 *、F*、O*などの各種ラジカルフラックスのエネルギー分布、角度分布、強度などに関するデータがある。
例えば、エッチングプロセスにおける化学反応としては、次に示すものがある。
イオン・エッチング過程の一反応として、
SFx++SiF4→F(2)*
を挙げることできる。イオンSFx+により加工表面上の蒸発物SiF4がエッチング反応して反応生成物F(2)*を離脱させる。離脱率の値がエネルギー、角度の関数として又はこれらに拠らない定数として設定されている。なお、F(2)*における(2)とは、ここでは例示しないF*と区別するための記号である。
また、中性粒子の吸着過程の一反応として、
F(2)*+Si→Si(2)
を挙げることができる。中性粒子ラジカルF(2)*が加工表面上のSiと反応して、蒸発物Si(2)を生成する。吸着率の値がエネルギー、角度の関数として又はこれらに拠らない定数として設定されている。なお、Si(2)における(2)とは、ここでは例示しないSiと区別するための記号である。
また、熱励起エッチング過程の一反応として、
SiF4(s)→SiF4(g)
を挙げることができる。加工表面上のSiF4(s)が熱励起によりSiF4(g)として離脱する。反応係数、活性化エネルギーの各値がエネルギー、角度の関数として又はこれらに拠らない定数として設定されている。
CxFy *+Si→Si_c
を挙げることができる。CxFy *がSi上に付着してSi_cを形成する。吸着率の値がエネルギー、角度の関数として又はこれらに拠らない定数として設定されている。
以下、本発明の実施形態に係るプラズマプロセスによる加工形状の予測シミュレーション装置10を用いて、加工形状の予測シミュレーションを行なう方法を具体的に説明する。
先ず、プラズマプロセスによる加工形状をどのようにして予測するかを説明する前提として、加工表面の状態をどのように記述し、その表面状態の変化をどのように記述するかについて、概念的に説明する。
また、一般的に、材料mの単位時間当たりの生成数をGm、材料mの単位時間当たりの消滅数をHmとすると、次の基本方程式が成り立つ。
よって、束縛条件により基本方程式を解くことで、各吸着ラジカルの表面被覆率を算出する(STEP1-1)。なお、材料mはラジカルと呼ぶ場合もある。
式(7)から分かるように、ERphyicalは反応性イオンと非反応性イオンの両方のイオンiについての和である。
ここで、ρdはデポジション層の密度であり、σm0(ε)はラジカルmと清浄な被エッチング材料膜との間の吸着率であり、σmk(ε)はラジカルmと被エッチング材料膜上に形成されたラジカルkの吸着層膜との間の吸着率である。εはラジカルmのエネルギーである。
式(10)から分かるように、被エッチング材料膜上に形成されたラジカルkがラジカルmに置き換わる全てのkにわたって加算され、さらに全ての堆積物にわたってmが加算される。
図1に示すプラズマプロセスによる加工形状の予測シミュレーション装置10により加工形状の予測シミュレーションを行なう方法の概略を説明する。図6は本発明の実施形態に係るプラズマプロセスによる加工形状の予測シミュレーションプログラムにより実現される加工形状の予測シミュレーション方法のフローの概略図である。プラズマプロセスによる加工形状の予測シミュレーション方法は、図6に示すように、加工処理対象物に関する条件、エッチングプロセスとデポジションプロセスとを一サイクルとした際のサイクル数を含めて各プロセスにおける条件及びシミュレーションに関する条件を設定する条件設定ステップSTEP11と、エッチングプロセスにおける条件に基づいたプラズマエッチングによる表面移動量を計算するエッチングプロセス表面移動量計算ステップSTEP12と、デポジションプロセスにおける条件に基づいたプラズマデポジションによる表面移動量を計算するデポジションプロセス表面移動量計算ステップSTEP13と、を備えている。エッチングプロセス表面移動量計算ステップSTEP12とデポジションプロセス表面移動量計算ステップSTEP13とを所定のサイクル数まで、すなわちSTEP14でYesとなるまで繰り返すことにより、形成される形状を予測する。
図1に示す表面移動量計算手段16が、軌道計算手段14及びレート計算手段15を用いて表面加工形状をどのように予測するか、を説明しながら、本発明の実施形態に係るプラズマプロセスによる加工形状の予測シミュレーション方法について詳細に説明する。図7は、図6に示すプラズマプロセスによる加工形状の予測シミュレーション方法の詳細なフローの前半を示す図、図8は図7に示すフローの後半を示す図である。
STEP12-2では、STEP11-3で設定したフラックス条件とSTEP11-4で設定した各反応係数に基づいて、各加工表面において表面材料とラジカルとの反応及び/又は表面材料とイオンとの反応を計算し、各材料の被覆率が定常状態となるまで繰り返す。これにより、エッチングレート及びデポジションレートがそれぞれ求まる。エッチングレートは、前述の式(5)のように、熱励起型化学反応、物理的スパッタリング、イオンアシスト反応のそれぞれによるエッチングレートの和として求める。デポジションレートは、前述の式(9)のように、堆積物が降り注ぐ効果、堆積物の生成、イオンアシスト反応のそれぞれによるデポジションレートの和として求める。これらの反応毎の各係数を加味して各レートを求めることで、加工表面の移動推移を算出する。そして、STEP12-3において、エッチングレートとデポジションレートの差分から加工表面の移動量を算出する。
次に、第2エッチングプロセスにおけるエッチング時間、RFバイアスパワーをパラメータとして、図7及び図8に示すフローに従ってボッシュプロセスをシミュレーションする(STEP22B)。パラメータの値として複数のものを設定してボッシュプロセスをシミュレーションすることで、最適条件を探索することが可能となる。
例えば、予測した加工形状、即ち、スキャロップの状況や孔の幅などと加工孔の深さなどから、最適な形状か否かを判断することができる(STEP22C)。
(B)は、一サイクルに、一つのデポジションプロセスと二つのエッチングプロセスとが、プロセス時間T11、T21、T22にそれぞれ設定され、各サイクルにおいて設定された条件を変えないバージョンである。
(C)は、一サイクルに、一つのデポジションプロセスと二つのエッチングプロセスとが設定されるものの、(B)とは異なり、サイクルの順に、デポジションプロセス内の一つのプロセス時間Tc11が、サイクル毎に変化してもよいバージョンである。
また図示しないが、サイクルに応じてデポジションプロセス内でのプロセス数、エッチングプロセス内でのプロセス数がサイクル番号で変化してもよい。
このように、条件設定手段11において、プロセスに関する条件の設定については任意にプロセス時間、ガス種、ガス圧、ガス流量、加工処理対象物の温度及びバイアスパワーのうち一以上がパラメータとして設定される。
図11は、本発明の実施形態に係るプラズマプロセスによる加工形状の予測シミュレーション装置により予測される孔の断面図で、(A)はエッチングプロセスを一段階で設定した場合の形状予想の結果を示し、(B)はエッチングプロセスを二段階で設定した場合の形状予測の結果を示す図である。(A)は、図10(A)に示すタイムチャートで、(B)は図10(B)に示すタイムチャートで、シミュレーションした結果である。(A)、(B)のそれぞれにおいてサイクル毎の処理時間が等しいので、同じ深さだけ削られていることが分かる。また、各サイクルでのエッチングに関するプロセス条件、デポジションに関するプロセス条件も(A)、(B)のそれぞれにおいて等しいので、サイクル毎の掘られる形状が等しいことが分かる。
11:条件設定手段
12:フラックス情報データベース
13:化学反応データベース
14:軌道計算手段
15:レート計算手段
16:表面移動量計算手段
17:計算制御手段
Claims (6)
- 加工処理対象物に関する条件、エッチングプロセスとデポジションプロセスとを一サイクルとした際のサイクル数を含むプロセス条件及びシミュレーションに関する条件を設定する条件設定手段と、
加工処理対象物の加工表面に照射されるフラックスのエネルギー分布及び/又は照射角度分布に関するデータを格納したフラックス情報データベースと、
エッチング及びデポジションの各プロセスにおける化学反応データを格納した化学反応データベースと、
加工表面における電荷分布により生じる電界分布を計算し加工表面に入射する荷電粒子の軌道を求める軌道計算手段と、
上記軌道計算手段で求まる荷電粒子の軌道に基づいて加工表面に入射する各種イオンを求め、上記フラックス情報データベース及び化学反応データベースに格納されているデータを用いて、加工表面の各領域における反応計算を行い、エッチングレート及びデポジションレートを求めるレート計算手段と、
上記レート計算手段で求まるエッチングレートとデポジションレートとの差分から表面移動量を算出する表面移動量計算手段と、
上記条件設定手段により設定される加工処理対象物に関する条件及びシミュレーションに関する条件に基づいて、上記条件設定手段により設定されるエッチングプロセスの条件に従って上記表面移動量計算手段による表面移動量の算出と、上記条件設定手段により設定されるデポジションプロセスの条件に従って上記表面移動量計算手段による表面移動量の算出と、を繰り返す計算制御手段と、
を備える、プラズマプロセスによる加工形状の予測シミュレーション装置。 - 前記条件設定手段は、エッチングプロセス、デポジションプロセスの何れか一方又は双方を構成する複数のプロセスに対してプロセス時間、ガス種、ガス圧、ガス流量、加工処理対象物の温度及びバイアスパワーのうち一以上をパラメータとして設定可能とし、
前記計算制御手段が、前記条件設定手段において設定されたパラメータ及びプロセスに関する条件に従って前記表面移動量計算手段を制御することにより、サイクル毎に、上記複数のプロセスの条件の順に表面移動量を算出する、請求項1に記載のプラズマプロセスによる加工形状の予測シミュレーション装置。 - 加工処理対象物に関する条件、エッチングプロセスとデポジションプロセスとを一サイクルとした際のサイクル数を含むプロセス条件及びシミュレーションに関する条件を設定する条件設定ステップと、
エッチングプロセスの条件に基づいたプラズマエッチングによる表面移動量を計算するエッチングプロセス表面移動量計算ステップと、
デポジションプロセスの条件に基づいたプラズマデポジションによる表面移動量を計算するデポジションプロセス表面移動量計算ステップと、
を備え、
上記エッチングプロセス表面移動量計算ステップと上記デポジションプロセス表面移動量計算ステップとを上記条件設定ステップにて設定されたサイクル数で繰り返すことにより形成される形状を求める、プラズマプロセスによる加工形状の予測シミュレーション方法。 - 前記条件設定ステップにおいて、エッチングプロセス、デポジションプロセスの何れか一方又は双方を構成する複数のプロセスに対して、プロセス時間、ガス種、ガス圧、ガス流量、加工処理対象物の温度及びバイアスパワーのうち一以上をパラメータとして設定し、
前記エッチングプロセス表面移動量計算ステップ、前記デポジションプロセス表面移動量計算ステップの何れか一方又は双方において、前記条件設定ステップにおいて設定されたパラメータ毎に表面移動量を算出する、請求項3に記載のプラズマプロセスによる加工形状の予測シミュレーション方法。 - 加工処理対象物に関する条件、エッチングプロセスとデポジションプロセスとを一サイクルとした際のサイクル数を含むプロセス条件及びシミュレーションに関する条件を設定する条件設定ステップと、
エッチングプロセスの条件に基づいたプラズマエッチングによる表面移動量を計算するエッチングプロセス表面移動量計算ステップと、
デポジションプロセスの条件に基づいたプラズマデポジションによる表面移動量を計算するデポジションプロセス表面移動量計算ステップと、
を備え、
上記エッチングプロセス表面移動量計算ステップと上記デポジションプロセス表面移動量計算ステップとを上記条件設定ステップにて設定されたサイクル数で繰り返すことにより形成される形状を求める、プラズマプロセスによる加工形状の予測シミュレーションプログラム。 - 前記条件設定ステップにおいて、エッチングプロセス、デポジションプロセスの何れか一方又は双方を構成する複数のプロセスに対して、プロセス時間、ガス種、ガス圧、ガス流量、加工処理対象物の温度及びバイアスパワーのうち一以上をパラメータとして設定し、
前記エッチングプロセス表面移動量計算ステップ、前記デポジションプロセス表面移動量計算ステップの何れか一方又は双方において、前記条件設定ステップにおいて設定されたパラメータ毎に表面移動量を算出する、請求項5に記載のプラズマプロセスによる加工形状の予測シミュレーションプログラム。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/003,692 US20140005991A1 (en) | 2011-03-07 | 2012-02-29 | Simulator, method, and program for predicting processing shape by plasma process |
EP12754266.0A EP2685489A4 (en) | 2011-03-07 | 2012-02-29 | DEVICE FOR ESTIMATING AND SIMULATING A FORM MADE BY A PLASMA PROCESS AND SIMULATION PROCESS AND PROGRAM |
KR1020137026341A KR101588691B1 (ko) | 2011-03-07 | 2012-02-29 | 플라즈마 프로세스에 의한 가공 형상의 예측 시뮬레이션 장치와 시뮬레이션 방법 및 프로그램 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011-049680 | 2011-03-07 | ||
JP2011049680A JP5685762B2 (ja) | 2011-03-07 | 2011-03-07 | プラズマ加工形状シミュレーション装置及びプログラム |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2012121081A1 true WO2012121081A1 (ja) | 2012-09-13 |
Family
ID=46798049
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2012/055091 WO2012121081A1 (ja) | 2011-03-07 | 2012-02-29 | プラズマプロセスによる加工形状の予測シミュレーション装置とシミュレーションの方法及びプログラム |
Country Status (6)
Country | Link |
---|---|
US (1) | US20140005991A1 (ja) |
EP (1) | EP2685489A4 (ja) |
JP (1) | JP5685762B2 (ja) |
KR (1) | KR101588691B1 (ja) |
TW (1) | TWI529801B (ja) |
WO (1) | WO2012121081A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10534355B2 (en) | 2015-02-20 | 2020-01-14 | Sony Semiconductor Solutions Corporation | Information processing device, processing device, prediction method, and processing method |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9201998B1 (en) | 2014-06-13 | 2015-12-01 | Kabushiki Kaisha Toshiba | Topography simulation apparatus, topography simulation method and recording medium |
JP6117746B2 (ja) | 2014-07-30 | 2017-04-19 | ソニーセミコンダクタソリューションズ株式会社 | エッチング特性推定方法、プログラム、情報処理装置、加工装置、設計方法、および、製造方法 |
US10138550B2 (en) * | 2014-09-10 | 2018-11-27 | Toshiba Memory Corporation | Film deposition method and an apparatus |
US10032681B2 (en) * | 2016-03-02 | 2018-07-24 | Lam Research Corporation | Etch metric sensitivity for endpoint detection |
US10572697B2 (en) | 2018-04-06 | 2020-02-25 | Lam Research Corporation | Method of etch model calibration using optical scatterometry |
US11624981B2 (en) | 2018-04-10 | 2023-04-11 | Lam Research Corporation | Resist and etch modeling |
WO2019200015A1 (en) | 2018-04-10 | 2019-10-17 | Lam Research Corporation | Optical metrology in machine learning to characterize features |
CN110457780A (zh) * | 2019-07-23 | 2019-11-15 | 上海卫星装备研究所 | 介质深层充电电位和内部充电电场获取方法及存储介质 |
CN113378444B (zh) * | 2021-08-13 | 2021-11-05 | 墨研计算科学(南京)有限公司 | 一种淀积工艺的仿真方法及装置 |
WO2024005047A1 (ja) * | 2022-07-01 | 2024-01-04 | 東京エレクトロン株式会社 | 基板処理装置の制御方法及び基板処理システム |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006514783A (ja) * | 2002-10-11 | 2006-05-11 | ラム リサーチ コーポレーション | プラズマエッチングのパフォーマンスを改善する方法 |
JP2007129260A (ja) | 1992-12-05 | 2007-05-24 | Robert Bosch Gmbh | ケイ素の異方性エッチング法 |
JP2007234867A (ja) * | 2006-03-01 | 2007-09-13 | Toshiba Corp | 加工形状シミュレーション方法、半導体装置の製造方法及び加工形状シミュレーションシステム |
JP2008529313A (ja) * | 2005-02-03 | 2008-07-31 | ラム リサーチ コーポレーション | 複数のマスキングステップを用いて微小寸法を低減する方法 |
Family Cites Families (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5070469A (en) * | 1988-11-29 | 1991-12-03 | Mitsubishi Denki Kabushiki Kaisha | Topography simulation method |
US5421934A (en) * | 1993-03-26 | 1995-06-06 | Matsushita Electric Industrial Co., Ltd. | Dry-etching process simulator |
US5733820A (en) * | 1995-04-27 | 1998-03-31 | Sharp Kabushiki Kaisha | Dry etching method |
JP3592826B2 (ja) * | 1996-03-05 | 2004-11-24 | 株式会社東芝 | 膜形状予測方法 |
JPH1174326A (ja) * | 1997-08-29 | 1999-03-16 | Hitachi Ltd | 半導体断面観察装置 |
US6151532A (en) * | 1998-03-03 | 2000-11-21 | Lam Research Corporation | Method and apparatus for predicting plasma-process surface profiles |
US6329292B1 (en) * | 1998-07-09 | 2001-12-11 | Applied Materials, Inc. | Integrated self aligned contact etch |
US6650426B1 (en) * | 1999-07-12 | 2003-11-18 | Sc Technology, Inc. | Endpoint determination for recess etching to a precise depth |
US6326307B1 (en) * | 1999-11-15 | 2001-12-04 | Appllied Materials, Inc. | Plasma pretreatment of photoresist in an oxide etch process |
US6617257B2 (en) * | 2001-03-30 | 2003-09-09 | Lam Research Corporation | Method of plasma etching organic antireflective coating |
US6558965B1 (en) * | 2001-07-11 | 2003-05-06 | Advanced Micro Devices, Inc. | Measuring BARC thickness using scatterometry |
JP4482308B2 (ja) * | 2002-11-26 | 2010-06-16 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP5404984B2 (ja) * | 2003-04-24 | 2014-02-05 | 東京エレクトロン株式会社 | プラズマモニタリング方法、プラズマモニタリング装置及びプラズマ処理装置 |
JP4745035B2 (ja) * | 2005-11-24 | 2011-08-10 | 株式会社東芝 | シミュレーション装置、シミュレーションプログラムおよびシミュレーション方法 |
US8165854B1 (en) * | 2006-01-11 | 2012-04-24 | Olambda, Inc. | Computer simulation of photolithographic processing |
US8709951B2 (en) * | 2007-07-19 | 2014-04-29 | Texas Instruments Incorporated | Implementing state-of-the-art gate transistor, sidewall profile/angle control by tuning gate etch process recipe parameters |
JP5322413B2 (ja) * | 2007-08-16 | 2013-10-23 | 株式会社東芝 | シミュレーション方法およびシミュレーションプログラム |
US8815744B2 (en) * | 2008-04-24 | 2014-08-26 | Fairchild Semiconductor Corporation | Technique for controlling trench profile in semiconductor structures |
JP2010134352A (ja) * | 2008-12-08 | 2010-06-17 | Fujifilm Corp | カラーフィルタの製造方法及び固体撮像素子 |
US8049327B2 (en) * | 2009-01-05 | 2011-11-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Through-silicon via with scalloped sidewalls |
JP5428450B2 (ja) * | 2009-03-30 | 2014-02-26 | ソニー株式会社 | イオン照射ダメージの予測方法とイオン照射ダメージのシミュレータ、およびイオン照射装置とイオン照射方法 |
JP5562591B2 (ja) * | 2009-07-31 | 2014-07-30 | 富士フイルム株式会社 | 着色硬化性組成物、カラーフィルタ及びその製造方法 |
JP5440021B2 (ja) * | 2009-08-24 | 2014-03-12 | ソニー株式会社 | 形状シミュレーション装置、形状シミュレーションプログラム、半導体製造装置及び半導体装置の製造方法 |
US8283988B2 (en) * | 2010-02-25 | 2012-10-09 | Seiko Epson Corporation | Resonator element, resonator, oscillator, and electronic device |
EP2549523A4 (en) * | 2010-03-16 | 2016-03-30 | Mizuho Information & Res Inst | SYSTEM, METHOD AND PROGRAM FOR PREDICTING A FINISHED FORM RESULTING FROM PLASMA PROCESSING |
JP5732843B2 (ja) * | 2010-12-21 | 2015-06-10 | ソニー株式会社 | シミュレータ、加工装置、ダメージ評価方法、及び、ダメージ評価プログラム |
US9287097B2 (en) * | 2011-11-30 | 2016-03-15 | Sony Corporation | Predicting ultraviolet ray damage with visible wavelength spectroscopy during a semiconductor manufacturing process |
JP5539547B2 (ja) * | 2012-01-24 | 2014-07-02 | キヤノン株式会社 | 液体吐出ヘッド及びその製造方法 |
US9147610B2 (en) * | 2012-06-22 | 2015-09-29 | Infineon Technologies Ag | Monitor structures and methods of formation thereof |
JP6065612B2 (ja) * | 2012-06-28 | 2017-01-25 | ソニー株式会社 | シミュレーション方法、シミュレーションプログラム、加工装置およびシミュレータ |
JP5974840B2 (ja) * | 2012-11-07 | 2016-08-23 | ソニー株式会社 | シミュレーション方法、シミュレーションプログラム、シミュレータ、加工装置、半導体装置の製造方法 |
US9317632B2 (en) * | 2013-03-14 | 2016-04-19 | Coventor, Inc. | System and method for modeling epitaxial growth in a 3-D virtual fabrication environment |
JP6177671B2 (ja) * | 2013-11-25 | 2017-08-09 | ソニーセミコンダクタソリューションズ株式会社 | シミュレーション方法、シミュレーションプログラムおよびシミュレータ |
-
2011
- 2011-03-07 JP JP2011049680A patent/JP5685762B2/ja not_active Expired - Fee Related
-
2012
- 2012-02-29 EP EP12754266.0A patent/EP2685489A4/en not_active Withdrawn
- 2012-02-29 WO PCT/JP2012/055091 patent/WO2012121081A1/ja active Application Filing
- 2012-02-29 US US14/003,692 patent/US20140005991A1/en not_active Abandoned
- 2012-02-29 KR KR1020137026341A patent/KR101588691B1/ko not_active IP Right Cessation
- 2012-03-03 TW TW101107151A patent/TWI529801B/zh not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007129260A (ja) | 1992-12-05 | 2007-05-24 | Robert Bosch Gmbh | ケイ素の異方性エッチング法 |
JP2006514783A (ja) * | 2002-10-11 | 2006-05-11 | ラム リサーチ コーポレーション | プラズマエッチングのパフォーマンスを改善する方法 |
JP2008529313A (ja) * | 2005-02-03 | 2008-07-31 | ラム リサーチ コーポレーション | 複数のマスキングステップを用いて微小寸法を低減する方法 |
JP2007234867A (ja) * | 2006-03-01 | 2007-09-13 | Toshiba Corp | 加工形状シミュレーション方法、半導体装置の製造方法及び加工形状シミュレーションシステム |
Non-Patent Citations (2)
Title |
---|
A.MISAKA; K.HARAFUJI; M.KUBOTA; N.NOMURA: "Novel Surface Reaction Model in Dry-Etching Process Simulator", JPN.J.APPL.PHYS, vol. 31, 1992, pages 4363 - 4669 |
See also references of EP2685489A4 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10534355B2 (en) | 2015-02-20 | 2020-01-14 | Sony Semiconductor Solutions Corporation | Information processing device, processing device, prediction method, and processing method |
Also Published As
Publication number | Publication date |
---|---|
US20140005991A1 (en) | 2014-01-02 |
KR101588691B1 (ko) | 2016-01-27 |
EP2685489A1 (en) | 2014-01-15 |
TWI529801B (zh) | 2016-04-11 |
KR20140016924A (ko) | 2014-02-10 |
EP2685489A4 (en) | 2014-09-24 |
JP5685762B2 (ja) | 2015-03-18 |
TW201239983A (en) | 2012-10-01 |
JP2012186394A (ja) | 2012-09-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2012121081A1 (ja) | プラズマプロセスによる加工形状の予測シミュレーション装置とシミュレーションの方法及びプログラム | |
JP5825492B2 (ja) | プラズマプロセスによる加工形状の予測システム、方法及びプログラム | |
Ishchuk et al. | Charging effect simulation model used in simulations of plasma etching of silicon | |
JP5428450B2 (ja) | イオン照射ダメージの予測方法とイオン照射ダメージのシミュレータ、およびイオン照射装置とイオン照射方法 | |
Kokkoris et al. | Simulation of SiO 2 and Si feature etching for microelectronics and microelectromechanical systems fabrication: A combined simulator coupling modules of surface etching, local flux calculation, and profile evolution | |
JP6065612B2 (ja) | シミュレーション方法、シミュレーションプログラム、加工装置およびシミュレータ | |
Tsuda et al. | Surface roughening and rippling during plasma etching of silicon: Numerical investigations and a comparison with experiments | |
Vanraes et al. | Multiscale modeling of plasma–surface interaction—General picture and a case study of Si and SiO2 etching by fluorocarbon-based plasmas | |
Xiao et al. | Multiscale modeling and neural network model based control of a plasma etch process | |
Kuboi et al. | Effect of open area ratio and pattern structure on fluctuations in critical dimension and Si recess | |
Akhoundi et al. | The effects of gas dilution on the nanoparticles nucleation in a low pressure capacitively coupled acetylene discharge | |
Gul et al. | Numerical study of capacitive coupled HBr/Cl2 plasma discharge for dry etch applications | |
Ishchuk et al. | ViPER: simulation software for high aspect ratio plasma etching of silicon | |
KR100278471B1 (ko) | 플라스마-어시스트 에칭 프로세스의 형상 시뮬레이션 방법 및시스템 | |
Park et al. | Micro-range uniformity control of the etching profile in the OLED display mass production referring to the PI-VM model | |
Makabe et al. | Vertically integrated computer-aided design for device processing | |
KR100575894B1 (ko) | 플라즈마 공정 챔버의 최적화 진단시스템 및 진단방법 | |
Morimoto et al. | Effect of time-modulation bias on polysilicon gate etching | |
Zhang et al. | Modeling and experimental investigation of the plasma uniformity in CF4/O2 capacitively coupled plasmas, operating in single frequency and dual frequency regime | |
Ebm et al. | Modeling of precursor coverage in ion-beam induced etching and verification with experiments using XeF2 on SiO2 | |
Akhoundi et al. | Simulation study of the nanoparticles nucleation in a pulse-modulated capacitively coupled rf acetylene discharge | |
Gul et al. | A comparative study of capacitively coupled HBr/He, HBr/Ar plasmas for etching applications: Numerical investigation by fluid model | |
Sukharev | Multiscale modeling of plasma etch processing | |
Radjenović et al. | An approach to the three-dimensional simulations of the Bosch process | |
Kuboi | Review and future perspective of feature scale profile modeling for high-performance semiconductor devices |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 12754266 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 14003692 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 20137026341 Country of ref document: KR Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2012754266 Country of ref document: EP |