KR101573302B1 - 반도체 장치 및 그 제조 방법 - Google Patents
반도체 장치 및 그 제조 방법 Download PDFInfo
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- KR101573302B1 KR101573302B1 KR1020090001448A KR20090001448A KR101573302B1 KR 101573302 B1 KR101573302 B1 KR 101573302B1 KR 1020090001448 A KR1020090001448 A KR 1020090001448A KR 20090001448 A KR20090001448 A KR 20090001448A KR 101573302 B1 KR101573302 B1 KR 101573302B1
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- Prior art keywords
- insulating layer
- semiconductor substrate
- semiconductor device
- layer
- via hole
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
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Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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| US12127343B2 (en) | 2020-10-22 | 2024-10-22 | Samsung Electro-Mechanics Co., Ltd. | Printed circuit board |
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| KR102521658B1 (ko) * | 2018-09-03 | 2023-04-13 | 삼성전자주식회사 | 반도체 칩 및 이의 제조 방법 |
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| US11367681B2 (en) * | 2019-01-24 | 2022-06-21 | Micron Technology, Inc. | Slit oxide and via formation techniques |
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| US12127343B2 (en) | 2020-10-22 | 2024-10-22 | Samsung Electro-Mechanics Co., Ltd. | Printed circuit board |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200947659A (en) | 2009-11-16 |
| US20110136342A1 (en) | 2011-06-09 |
| JP2009164481A (ja) | 2009-07-23 |
| KR20090076832A (ko) | 2009-07-13 |
| CN101483162B (zh) | 2010-09-08 |
| CN101483162A (zh) | 2009-07-15 |
| US8564101B2 (en) | 2013-10-22 |
| US20090200679A1 (en) | 2009-08-13 |
| US8273657B2 (en) | 2012-09-25 |
| JP5259197B2 (ja) | 2013-08-07 |
| TWI492354B (zh) | 2015-07-11 |
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