KR101562609B1 - 광센서 소자, 촬상 장치, 전자 기기, 및 메모리 소자 - Google Patents

광센서 소자, 촬상 장치, 전자 기기, 및 메모리 소자 Download PDF

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Publication number
KR101562609B1
KR101562609B1 KR1020090006948A KR20090006948A KR101562609B1 KR 101562609 B1 KR101562609 B1 KR 101562609B1 KR 1020090006948 A KR1020090006948 A KR 1020090006948A KR 20090006948 A KR20090006948 A KR 20090006948A KR 101562609 B1 KR101562609 B1 KR 101562609B1
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South Korea
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semiconductor layer
light
electrode
gate
voltage
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KR20090084708A (ko
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츠토무 다나까
다람 팔 고사인
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가부시키가이샤 재팬 디스프레이
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G11C13/047—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using electro-optical elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G11C13/042—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using information stored in the form of interference pattern
    • G11C13/044—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using information stored in the form of interference pattern using electro-optical elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Light Receiving Elements (AREA)
KR1020090006948A 2008-01-31 2009-01-29 광센서 소자, 촬상 장치, 전자 기기, 및 메모리 소자 Expired - Fee Related KR101562609B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008020558A JP5121478B2 (ja) 2008-01-31 2008-01-31 光センサー素子、撮像装置、電子機器、およびメモリー素子
JPJP-P-2008-020558 2008-01-31

Publications (2)

Publication Number Publication Date
KR20090084708A KR20090084708A (ko) 2009-08-05
KR101562609B1 true KR101562609B1 (ko) 2015-10-23

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KR1020090006948A Expired - Fee Related KR101562609B1 (ko) 2008-01-31 2009-01-29 광센서 소자, 촬상 장치, 전자 기기, 및 메모리 소자

Country Status (5)

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US (1) US8194469B2 (enExample)
JP (1) JP5121478B2 (enExample)
KR (1) KR101562609B1 (enExample)
CN (1) CN101499498B (enExample)
TW (1) TWI384634B (enExample)

Families Citing this family (123)

* Cited by examiner, † Cited by third party
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