KR101520284B1 - 반도체장치 - Google Patents

반도체장치 Download PDF

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Publication number
KR101520284B1
KR101520284B1 KR1020107001655A KR20107001655A KR101520284B1 KR 101520284 B1 KR101520284 B1 KR 101520284B1 KR 1020107001655 A KR1020107001655 A KR 1020107001655A KR 20107001655 A KR20107001655 A KR 20107001655A KR 101520284 B1 KR101520284 B1 KR 101520284B1
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KR
South Korea
Prior art keywords
insulating film
layer
film
substrate
semiconductor
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Expired - Fee Related
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KR1020107001655A
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English (en)
Korean (ko)
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KR20100033521A (ko
Inventor
요시노리 이에다
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane

Landscapes

  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Non-Volatile Memory (AREA)
  • Recrystallisation Techniques (AREA)
KR1020107001655A 2007-06-25 2008-06-12 반도체장치 Expired - Fee Related KR101520284B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007166495 2007-06-25
JPJP-P-2007-166495 2007-06-25
PCT/JP2008/061167 WO2009001733A1 (en) 2007-06-25 2008-06-12 Semiconductor device

Publications (2)

Publication Number Publication Date
KR20100033521A KR20100033521A (ko) 2010-03-30
KR101520284B1 true KR101520284B1 (ko) 2015-05-14

Family

ID=40135566

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107001655A Expired - Fee Related KR101520284B1 (ko) 2007-06-25 2008-06-12 반도체장치

Country Status (5)

Country Link
US (1) US8319269B2 (enExample)
JP (1) JP5384038B2 (enExample)
KR (1) KR101520284B1 (enExample)
CN (1) CN101681885B (enExample)
WO (1) WO2009001733A1 (enExample)

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* Cited by examiner, † Cited by third party
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KR101520284B1 (ko) * 2007-06-25 2015-05-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
WO2010086067A1 (en) * 2009-01-29 2010-08-05 International Business Machines Corporation Memory transistor with a non-planar floating gate and manufacturing method thereof
US9202822B2 (en) * 2010-12-17 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6012263B2 (ja) 2011-06-09 2016-10-25 株式会社半導体エネルギー研究所 半導体記憶装置
KR101933741B1 (ko) 2011-06-09 2018-12-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 캐시 메모리 및 캐시 메모리의 구동 방법
JP6013685B2 (ja) * 2011-07-22 2016-10-25 株式会社半導体エネルギー研究所 半導体装置
US8994019B2 (en) * 2011-08-05 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9135182B2 (en) 2012-06-01 2015-09-15 Semiconductor Energy Laboratory Co., Ltd. Central processing unit and driving method thereof
CN105140299B (zh) * 2015-10-14 2017-12-15 京东方科技集团股份有限公司 薄膜晶体管及其制备方法
TWI686929B (zh) 2016-05-20 2020-03-01 聯華電子股份有限公司 半導體元件
CN105932032A (zh) * 2016-06-16 2016-09-07 深圳市华星光电技术有限公司 一种阵列基板及其制备方法
KR102684115B1 (ko) * 2019-07-19 2024-07-12 에스케이하이닉스 주식회사 반도체 메모리 소자
WO2021046734A1 (zh) * 2019-09-11 2021-03-18 咸阳彩虹光电科技有限公司 开关元件和显示面板
US11335775B2 (en) 2020-08-27 2022-05-17 Micron Technology, Inc. Integrated assemblies and methods of forming integrated assemblies
JP7688550B2 (ja) * 2021-09-17 2025-06-04 キオクシア株式会社 半導体装置、半導体装置の製造方法、および基板の再利用方法

Citations (3)

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JP2001326289A (ja) 2000-03-08 2001-11-22 Semiconductor Energy Lab Co Ltd 不揮発性メモリおよび半導体装置
US20070228453A1 (en) 2006-03-31 2007-10-04 Shunpei Yamazaki Nonvolatile semiconductor memory device
JP2007294911A (ja) 2006-03-31 2007-11-08 Semiconductor Energy Lab Co Ltd 不揮発性半導体記憶装置

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JPH0758225A (ja) * 1993-08-10 1995-03-03 Oki Electric Ind Co Ltd 不揮発性半導体記憶装置及びその形成方法
JPH10233505A (ja) * 1997-02-21 1998-09-02 Hitachi Ltd 半導体装置の製造方法
JP3943245B2 (ja) * 1997-09-20 2007-07-11 株式会社半導体エネルギー研究所 半導体装置
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JP2002198446A (ja) * 2000-12-27 2002-07-12 Fujitsu Ltd 半導体記憶装置とその製造方法
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JP4928890B2 (ja) * 2005-10-14 2012-05-09 株式会社東芝 不揮発性半導体記憶装置
JP4575320B2 (ja) * 2006-03-15 2010-11-04 株式会社東芝 不揮発性半導体記憶装置
EP1837900A3 (en) * 2006-03-21 2008-10-15 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
EP1837917A1 (en) * 2006-03-21 2007-09-26 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
TWI416738B (zh) * 2006-03-21 2013-11-21 Semiconductor Energy Lab 非揮發性半導體記憶體裝置
EP1840947A3 (en) * 2006-03-31 2008-08-13 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
KR101432766B1 (ko) * 2006-05-26 2014-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작방법
US7994000B2 (en) * 2007-02-27 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7791172B2 (en) * 2007-03-19 2010-09-07 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
KR101520284B1 (ko) * 2007-06-25 2015-05-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치

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Publication number Priority date Publication date Assignee Title
JP2001326289A (ja) 2000-03-08 2001-11-22 Semiconductor Energy Lab Co Ltd 不揮発性メモリおよび半導体装置
US20070228453A1 (en) 2006-03-31 2007-10-04 Shunpei Yamazaki Nonvolatile semiconductor memory device
JP2007294911A (ja) 2006-03-31 2007-11-08 Semiconductor Energy Lab Co Ltd 不揮発性半導体記憶装置

Also Published As

Publication number Publication date
US8319269B2 (en) 2012-11-27
US20080315286A1 (en) 2008-12-25
CN101681885A (zh) 2010-03-24
KR20100033521A (ko) 2010-03-30
JP5384038B2 (ja) 2014-01-08
WO2009001733A1 (en) 2008-12-31
JP2009033118A (ja) 2009-02-12
CN101681885B (zh) 2013-09-25

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