JP5384038B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5384038B2
JP5384038B2 JP2008156353A JP2008156353A JP5384038B2 JP 5384038 B2 JP5384038 B2 JP 5384038B2 JP 2008156353 A JP2008156353 A JP 2008156353A JP 2008156353 A JP2008156353 A JP 2008156353A JP 5384038 B2 JP5384038 B2 JP 5384038B2
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Japan
Prior art keywords
layer
insulating film
film
substrate
heat treatment
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JP2008156353A
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English (en)
Japanese (ja)
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JP2009033118A (ja
JP2009033118A5 (enExample
Inventor
義紀 家田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2008156353A priority Critical patent/JP5384038B2/ja
Publication of JP2009033118A publication Critical patent/JP2009033118A/ja
Publication of JP2009033118A5 publication Critical patent/JP2009033118A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane

Landscapes

  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Non-Volatile Memory (AREA)
  • Recrystallisation Techniques (AREA)
JP2008156353A 2007-06-25 2008-06-16 半導体装置 Active JP5384038B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008156353A JP5384038B2 (ja) 2007-06-25 2008-06-16 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007166495 2007-06-25
JP2007166495 2007-06-25
JP2008156353A JP5384038B2 (ja) 2007-06-25 2008-06-16 半導体装置

Publications (3)

Publication Number Publication Date
JP2009033118A JP2009033118A (ja) 2009-02-12
JP2009033118A5 JP2009033118A5 (enExample) 2011-07-07
JP5384038B2 true JP5384038B2 (ja) 2014-01-08

Family

ID=40135566

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008156353A Active JP5384038B2 (ja) 2007-06-25 2008-06-16 半導体装置

Country Status (5)

Country Link
US (1) US8319269B2 (enExample)
JP (1) JP5384038B2 (enExample)
KR (1) KR101520284B1 (enExample)
CN (1) CN101681885B (enExample)
WO (1) WO2009001733A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101681885B (zh) * 2007-06-25 2013-09-25 株式会社半导体能源研究所 半导体器件
WO2010086067A1 (en) * 2009-01-29 2010-08-05 International Business Machines Corporation Memory transistor with a non-planar floating gate and manufacturing method thereof
US9202822B2 (en) * 2010-12-17 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2012169142A1 (en) 2011-06-09 2012-12-13 Semiconductor Energy Laboratory Co., Ltd. Cache memory and method for driving the same
JP6012263B2 (ja) 2011-06-09 2016-10-25 株式会社半導体エネルギー研究所 半導体記憶装置
JP6013685B2 (ja) 2011-07-22 2016-10-25 株式会社半導体エネルギー研究所 半導体装置
US8994019B2 (en) * 2011-08-05 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9135182B2 (en) 2012-06-01 2015-09-15 Semiconductor Energy Laboratory Co., Ltd. Central processing unit and driving method thereof
CN105140299B (zh) * 2015-10-14 2017-12-15 京东方科技集团股份有限公司 薄膜晶体管及其制备方法
TWI686929B (zh) 2016-05-20 2020-03-01 聯華電子股份有限公司 半導體元件
CN105932032A (zh) * 2016-06-16 2016-09-07 深圳市华星光电技术有限公司 一种阵列基板及其制备方法
KR102684115B1 (ko) * 2019-07-19 2024-07-12 에스케이하이닉스 주식회사 반도체 메모리 소자
WO2021046734A1 (zh) * 2019-09-11 2021-03-18 咸阳彩虹光电科技有限公司 开关元件和显示面板
US11335775B2 (en) * 2020-08-27 2022-05-17 Micron Technology, Inc. Integrated assemblies and methods of forming integrated assemblies
JP7688550B2 (ja) * 2021-09-17 2025-06-04 キオクシア株式会社 半導体装置、半導体装置の製造方法、および基板の再利用方法

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3996657A (en) 1974-12-30 1976-12-14 Intel Corporation Double polycrystalline silicon gate memory device
JPH0758225A (ja) * 1993-08-10 1995-03-03 Oki Electric Ind Co Ltd 不揮発性半導体記憶装置及びその形成方法
JPH10233505A (ja) * 1997-02-21 1998-09-02 Hitachi Ltd 半導体装置の製造方法
JP3943245B2 (ja) * 1997-09-20 2007-07-11 株式会社半導体エネルギー研究所 半導体装置
TW518650B (en) * 1999-04-15 2003-01-21 Semiconductor Energy Lab Electro-optical device and electronic equipment
EP1220318A4 (en) 1999-09-30 2007-06-06 Rohm Co Ltd Nonvolatile memory
JP2001326289A (ja) 2000-03-08 2001-11-22 Semiconductor Energy Lab Co Ltd 不揮発性メモリおよび半導体装置
JP2002198446A (ja) * 2000-12-27 2002-07-12 Fujitsu Ltd 半導体記憶装置とその製造方法
US6784480B2 (en) * 2002-02-12 2004-08-31 Micron Technology, Inc. Asymmetric band-gap engineered nonvolatile memory device
US6586349B1 (en) * 2002-02-21 2003-07-01 Advanced Micro Devices, Inc. Integrated process for fabrication of graded composite dielectric material layers for semiconductor devices
JP5046464B2 (ja) * 2002-12-18 2012-10-10 株式会社半導体エネルギー研究所 半導体記憶素子の作製方法
EP1714294B1 (en) * 2004-02-10 2016-04-20 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory
US7102191B2 (en) * 2004-03-24 2006-09-05 Micron Technologies, Inc. Memory device with high dielectric constant gate dielectrics and metal floating gates
JP4942950B2 (ja) 2004-05-28 2012-05-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7504663B2 (en) * 2004-05-28 2009-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with a floating gate electrode that includes a plurality of particles
US7335556B2 (en) * 2004-06-14 2008-02-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US20070063147A1 (en) * 2004-06-14 2007-03-22 Semiconductor Energy Laboratory Co., Ltd. Doping device
KR100688575B1 (ko) * 2004-10-08 2007-03-02 삼성전자주식회사 비휘발성 반도체 메모리 소자
WO2006112793A1 (en) * 2005-04-20 2006-10-26 National University Of Singapore Nonvolatile flash memory device and method for producing the same
JP4851740B2 (ja) * 2005-06-30 2012-01-11 株式会社東芝 半導体装置およびその製造方法
JP2007053171A (ja) * 2005-08-16 2007-03-01 Toshiba Corp 不揮発性半導体メモリ装置
JP4909552B2 (ja) * 2005-09-12 2012-04-04 旭硝子株式会社 電荷保持特性に優れた不揮発性半導体記憶素子の製造方法
JP4928890B2 (ja) * 2005-10-14 2012-05-09 株式会社東芝 不揮発性半導体記憶装置
JP4575320B2 (ja) * 2006-03-15 2010-11-04 株式会社東芝 不揮発性半導体記憶装置
TWI416738B (zh) * 2006-03-21 2013-11-21 Semiconductor Energy Lab 非揮發性半導體記憶體裝置
EP1837900A3 (en) * 2006-03-21 2008-10-15 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
EP1837917A1 (en) * 2006-03-21 2007-09-26 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
JP2007294911A (ja) 2006-03-31 2007-11-08 Semiconductor Energy Lab Co Ltd 不揮発性半導体記憶装置
US8022460B2 (en) 2006-03-31 2011-09-20 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
EP1840947A3 (en) * 2006-03-31 2008-08-13 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
CN102332471B (zh) * 2006-05-26 2015-10-07 株式会社半导体能源研究所 半导体器件及其制造方法
US7994000B2 (en) * 2007-02-27 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7791172B2 (en) * 2007-03-19 2010-09-07 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
CN101681885B (zh) * 2007-06-25 2013-09-25 株式会社半导体能源研究所 半导体器件

Also Published As

Publication number Publication date
US20080315286A1 (en) 2008-12-25
JP2009033118A (ja) 2009-02-12
CN101681885A (zh) 2010-03-24
CN101681885B (zh) 2013-09-25
KR20100033521A (ko) 2010-03-30
KR101520284B1 (ko) 2015-05-14
US8319269B2 (en) 2012-11-27
WO2009001733A1 (en) 2008-12-31

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