KR101512194B1 - 전기 광학 장치 및 전자기기 - Google Patents
전기 광학 장치 및 전자기기 Download PDFInfo
- Publication number
- KR101512194B1 KR101512194B1 KR20080077359A KR20080077359A KR101512194B1 KR 101512194 B1 KR101512194 B1 KR 101512194B1 KR 20080077359 A KR20080077359 A KR 20080077359A KR 20080077359 A KR20080077359 A KR 20080077359A KR 101512194 B1 KR101512194 B1 KR 101512194B1
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- electrode
- pixel
- light
- conductive film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims abstract description 81
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 239000003990 capacitor Substances 0.000 claims description 179
- 229910052751 metal Inorganic materials 0.000 claims description 29
- 239000002184 metal Substances 0.000 claims description 29
- 230000003287 optical effect Effects 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 239000010410 layer Substances 0.000 abstract description 301
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 61
- 239000011229 interlayer Substances 0.000 abstract description 60
- 239000010408 film Substances 0.000 description 186
- 238000003860 storage Methods 0.000 description 48
- 239000012535 impurity Substances 0.000 description 13
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 230000001965 increasing effect Effects 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 7
- 239000002356 single layer Substances 0.000 description 7
- 239000004020 conductor Substances 0.000 description 6
- 239000003870 refractory metal Substances 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 229910018182 Al—Cu Inorganic materials 0.000 description 5
- 229910018594 Si-Cu Inorganic materials 0.000 description 5
- 229910008465 Si—Cu Inorganic materials 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 238000003475 lamination Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- 239000011651 chromium Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 3
- 238000001962 electrophoresis Methods 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 241000588731 Hafnia Species 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
- Geometry (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007207644 | 2007-08-09 | ||
JPJP-P-2007-00207644 | 2007-08-09 | ||
JPJP-P-2008-00137915 | 2008-05-27 | ||
JP2008137915A JP5360673B2 (ja) | 2007-08-09 | 2008-05-27 | 電気光学装置及び電子機器 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20090015841A KR20090015841A (ko) | 2009-02-12 |
KR101512194B1 true KR101512194B1 (ko) | 2015-04-14 |
Family
ID=40390454
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR20080077359A Active KR101512194B1 (ko) | 2007-08-09 | 2008-08-07 | 전기 광학 장치 및 전자기기 |
Country Status (3)
Country | Link |
---|---|
JP (3) | JP5360673B2 (enrdf_load_stackoverflow) |
KR (1) | KR101512194B1 (enrdf_load_stackoverflow) |
CN (2) | CN101364018B (enrdf_load_stackoverflow) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011133603A (ja) | 2009-12-24 | 2011-07-07 | Seiko Epson Corp | 電気光学装置、電気光学装置の製造方法および電子機器 |
JP2012252033A (ja) * | 2011-05-31 | 2012-12-20 | Seiko Epson Corp | 電気光学装置および電子機器 |
CN103226272B (zh) * | 2013-04-16 | 2015-07-22 | 合肥京东方光电科技有限公司 | 一种阵列基板及其制备方法、显示装置 |
TW201539095A (zh) * | 2014-04-01 | 2015-10-16 | Seiko Epson Corp | 光電裝置及電子機器 |
CN104020892B (zh) * | 2014-05-30 | 2017-07-28 | 京东方科技集团股份有限公司 | 一种内嵌式触摸屏及显示装置 |
JP6459316B2 (ja) * | 2014-09-03 | 2019-01-30 | セイコーエプソン株式会社 | 有機エレクトロルミネッセンス装置および電子機器 |
CN104538400B (zh) * | 2014-12-16 | 2017-08-04 | 深圳市华星光电技术有限公司 | 一种ltps阵列基板 |
CN104485349B (zh) * | 2014-12-26 | 2017-08-25 | 昆山工研院新型平板显示技术中心有限公司 | 无边框显示屏器件 |
JP6146441B2 (ja) * | 2015-07-17 | 2017-06-14 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
JP6409894B2 (ja) * | 2017-03-16 | 2018-10-24 | セイコーエプソン株式会社 | 電気光学装置および電子機器 |
JP6665888B2 (ja) * | 2018-06-22 | 2020-03-13 | セイコーエプソン株式会社 | 電気光学装置および電子機器 |
JP6665889B2 (ja) * | 2018-06-22 | 2020-03-13 | セイコーエプソン株式会社 | 電気光学装置および電子機器 |
JP6939857B2 (ja) * | 2019-08-26 | 2021-09-22 | セイコーエプソン株式会社 | 電気光学装置、および電子機器 |
JP7314782B2 (ja) * | 2019-11-28 | 2023-07-26 | セイコーエプソン株式会社 | 液晶装置および電子機器 |
CN114582895B (zh) * | 2022-03-14 | 2025-08-22 | 京东方科技集团股份有限公司 | 显示基板、显示面板及显示装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20040038867A (ko) * | 2002-10-31 | 2004-05-08 | 세이코 엡슨 가부시키가이샤 | 전기 광학 장치 및 전자기기 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1010574A (ja) * | 1996-06-26 | 1998-01-16 | Sharp Corp | 液晶表示装置およびその製造方法 |
JP3708637B2 (ja) * | 1996-07-15 | 2005-10-19 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
JP3716580B2 (ja) * | 1997-02-27 | 2005-11-16 | セイコーエプソン株式会社 | 液晶装置及びその製造方法、並びに投写型表示装置 |
JPH11352521A (ja) * | 1998-04-07 | 1999-12-24 | Hitachi Ltd | 液晶表示装置 |
JP3763728B2 (ja) * | 1999-09-30 | 2006-04-05 | セイコーエプソン株式会社 | 電気光学装置及びプロジェクタ |
JP3838332B2 (ja) * | 2000-01-24 | 2006-10-25 | 日本電気株式会社 | 透過型液晶表示装置及び液晶プロジェクタ装置 |
CN1267782C (zh) * | 2000-04-21 | 2006-08-02 | 精工爱普生株式会社 | 电光装置 |
JP4075299B2 (ja) * | 2000-09-20 | 2008-04-16 | セイコーエプソン株式会社 | 電気光学装置用素子基板及びそれを用いた電気光学装置 |
JP4216092B2 (ja) * | 2002-03-08 | 2009-01-28 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
JP4021392B2 (ja) * | 2002-10-31 | 2007-12-12 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
JP3925549B2 (ja) * | 2002-11-26 | 2007-06-06 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
JP4196888B2 (ja) * | 2004-06-25 | 2008-12-17 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
JP2006098528A (ja) * | 2004-09-28 | 2006-04-13 | Dainippon Printing Co Ltd | カラーフィルタ |
JP4586732B2 (ja) * | 2006-01-06 | 2010-11-24 | セイコーエプソン株式会社 | 電気光学装置及びその製造方法並びに電子機器 |
-
2008
- 2008-05-27 JP JP2008137915A patent/JP5360673B2/ja active Active
- 2008-08-07 KR KR20080077359A patent/KR101512194B1/ko active Active
- 2008-08-07 CN CN2008101449116A patent/CN101364018B/zh active Active
- 2008-08-07 CN CN201310077412.0A patent/CN103176323B/zh active Active
-
2013
- 2013-05-28 JP JP2013111691A patent/JP6009408B2/ja active Active
-
2015
- 2015-06-24 JP JP2015127092A patent/JP6152880B2/ja active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20040038867A (ko) * | 2002-10-31 | 2004-05-08 | 세이코 엡슨 가부시키가이샤 | 전기 광학 장치 및 전자기기 |
Also Published As
Publication number | Publication date |
---|---|
JP2013214082A (ja) | 2013-10-17 |
JP2009063994A (ja) | 2009-03-26 |
CN101364018A (zh) | 2009-02-11 |
CN103176323B (zh) | 2016-05-11 |
CN103176323A (zh) | 2013-06-26 |
JP6152880B2 (ja) | 2017-06-28 |
CN101364018B (zh) | 2013-04-17 |
JP6009408B2 (ja) | 2016-10-19 |
JP5360673B2 (ja) | 2013-12-04 |
KR20090015841A (ko) | 2009-02-12 |
JP2015215622A (ja) | 2015-12-03 |
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Legal Events
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Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20080807 |
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Patent event code: PA02012R01D Patent event date: 20130724 Comment text: Request for Examination of Application Patent event code: PA02011R01I Patent event date: 20080807 Comment text: Patent Application |
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