KR101492281B1 - 용량-결합형 ｒｆ 플라즈마 반응기에서 전극 갭을 조정하는 장치 - Google Patents

용량-결합형 ｒｆ 플라즈마 반응기에서 전극 갭을 조정하는 장치 Download PDF

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KR101492281B1
KR101492281B1 KR1020097017053A KR20097017053A KR101492281B1 KR 101492281 B1 KR101492281 B1 KR 101492281B1 KR 1020097017053 A KR1020097017053 A KR 1020097017053A KR 20097017053 A KR20097017053 A KR 20097017053A KR 101492281 B1 KR101492281 B1 KR 101492281B1
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assembly
cantilever assembly
gap
substrate support
cantilever
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KR20090106612A (ko
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라진더 딘드사
에릭 에이치 렌즈
앤디 더블유 데셉테
루민 리
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램 리써치 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020097017053A 2007-01-17 2008-01-02 용량-결합형 ｒｆ 플라즈마 반응기에서 전극 갭을 조정하는 장치 Active KR101492281B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/653,869 2007-01-17
US11/653,869 US7732728B2 (en) 2007-01-17 2007-01-17 Apparatuses for adjusting electrode gap in capacitively-coupled RF plasma reactor
PCT/US2008/000001 WO2008088668A1 (en) 2007-01-17 2008-01-02 Apparatuses for adjusting electrode gap in capacitively-coupled rf plasma reactor

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KR20090106612A KR20090106612A (ko) 2009-10-09
KR101492281B1 true KR101492281B1 (ko) 2015-02-11

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US (2) US7732728B2 (enExample)
JP (2) JP5090468B2 (enExample)
KR (1) KR101492281B1 (enExample)
CN (1) CN101584026B (enExample)
TW (1) TWI460769B (enExample)
WO (1) WO2008088668A1 (enExample)

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CN101584026A (zh) 2009-11-18
TWI460769B (zh) 2014-11-11
JP2013038433A (ja) 2013-02-21
US20100124822A1 (en) 2010-05-20
WO2008088668A1 (en) 2008-07-24
US8080760B2 (en) 2011-12-20
JP5090468B2 (ja) 2012-12-05
KR20090106612A (ko) 2009-10-09
TW200845138A (en) 2008-11-16
JP2010517266A (ja) 2010-05-20
CN101584026B (zh) 2012-11-14
US7732728B2 (en) 2010-06-08
US20080171444A1 (en) 2008-07-17

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