JP5090468B2 - 容量結合型高周波プラズマ反応器における電極間隙を調整する装置 - Google Patents

容量結合型高周波プラズマ反応器における電極間隙を調整する装置 Download PDF

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JP5090468B2
JP5090468B2 JP2009546392A JP2009546392A JP5090468B2 JP 5090468 B2 JP5090468 B2 JP 5090468B2 JP 2009546392 A JP2009546392 A JP 2009546392A JP 2009546392 A JP2009546392 A JP 2009546392A JP 5090468 B2 JP5090468 B2 JP 5090468B2
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processing apparatus
plasma processing
assembly
arm
bellows
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JP2010517266A5 (enExample
JP2010517266A (ja
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ラジンダ− ディンジャ，
エリック， エイチ． レンツ，
アンディ， ダブリュ． デズート，
ルミン リ，
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP2009546392A 2007-01-17 2008-01-02 容量結合型高周波プラズマ反応器における電極間隙を調整する装置 Active JP5090468B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/653,869 US7732728B2 (en) 2007-01-17 2007-01-17 Apparatuses for adjusting electrode gap in capacitively-coupled RF plasma reactor
US11/653,869 2007-01-17
PCT/US2008/000001 WO2008088668A1 (en) 2007-01-17 2008-01-02 Apparatuses for adjusting electrode gap in capacitively-coupled rf plasma reactor

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JP2012200841A Division JP2013038433A (ja) 2007-01-17 2012-09-12 容量結合型高周波プラズマ反応器における電極間隙を調整する装置

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JP2010517266A JP2010517266A (ja) 2010-05-20
JP2010517266A5 JP2010517266A5 (enExample) 2011-02-10
JP5090468B2 true JP5090468B2 (ja) 2012-12-05

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JP2009546392A Active JP5090468B2 (ja) 2007-01-17 2008-01-02 容量結合型高周波プラズマ反応器における電極間隙を調整する装置
JP2012200841A Pending JP2013038433A (ja) 2007-01-17 2012-09-12 容量結合型高周波プラズマ反応器における電極間隙を調整する装置

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JP2012200841A Pending JP2013038433A (ja) 2007-01-17 2012-09-12 容量結合型高周波プラズマ反応器における電極間隙を調整する装置

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US (2) US7732728B2 (enExample)
JP (2) JP5090468B2 (enExample)
KR (1) KR101492281B1 (enExample)
CN (1) CN101584026B (enExample)
TW (1) TWI460769B (enExample)
WO (1) WO2008088668A1 (enExample)

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Publication number Publication date
US8080760B2 (en) 2011-12-20
CN101584026A (zh) 2009-11-18
TW200845138A (en) 2008-11-16
CN101584026B (zh) 2012-11-14
JP2013038433A (ja) 2013-02-21
JP2010517266A (ja) 2010-05-20
KR101492281B1 (ko) 2015-02-11
US20100124822A1 (en) 2010-05-20
KR20090106612A (ko) 2009-10-09
US20080171444A1 (en) 2008-07-17
WO2008088668A1 (en) 2008-07-24
US7732728B2 (en) 2010-06-08
TWI460769B (zh) 2014-11-11

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