JP2010517266A5 - - Google Patents

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JP2010517266A5
JP2010517266A5 JP2009546392A JP2009546392A JP2010517266A5 JP 2010517266 A5 JP2010517266 A5 JP 2010517266A5 JP 2009546392 A JP2009546392 A JP 2009546392A JP 2009546392 A JP2009546392 A JP 2009546392A JP 2010517266 A5 JP2010517266 A5 JP 2010517266A5
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processing apparatus
plasma processing
assembly
plasma
substrate support
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JP2009546392A
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JP2010517266A (ja
JP5090468B2 (ja
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Priority claimed from US11/653,869 external-priority patent/US7732728B2/en
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JP2009546392A 2007-01-17 2008-01-02 容量結合型高周波プラズマ反応器における電極間隙を調整する装置 Active JP5090468B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/653,869 US7732728B2 (en) 2007-01-17 2007-01-17 Apparatuses for adjusting electrode gap in capacitively-coupled RF plasma reactor
US11/653,869 2007-01-17
PCT/US2008/000001 WO2008088668A1 (en) 2007-01-17 2008-01-02 Apparatuses for adjusting electrode gap in capacitively-coupled rf plasma reactor

Related Child Applications (1)

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JP2012200841A Division JP2013038433A (ja) 2007-01-17 2012-09-12 容量結合型高周波プラズマ反応器における電極間隙を調整する装置

Publications (3)

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JP2010517266A JP2010517266A (ja) 2010-05-20
JP2010517266A5 true JP2010517266A5 (enExample) 2011-02-10
JP5090468B2 JP5090468B2 (ja) 2012-12-05

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JP2009546392A Active JP5090468B2 (ja) 2007-01-17 2008-01-02 容量結合型高周波プラズマ反応器における電極間隙を調整する装置
JP2012200841A Pending JP2013038433A (ja) 2007-01-17 2012-09-12 容量結合型高周波プラズマ反応器における電極間隙を調整する装置

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JP2012200841A Pending JP2013038433A (ja) 2007-01-17 2012-09-12 容量結合型高周波プラズマ反応器における電極間隙を調整する装置

Country Status (6)

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US (2) US7732728B2 (enExample)
JP (2) JP5090468B2 (enExample)
KR (1) KR101492281B1 (enExample)
CN (1) CN101584026B (enExample)
TW (1) TWI460769B (enExample)
WO (1) WO2008088668A1 (enExample)

Families Citing this family (96)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7364623B2 (en) * 2005-01-27 2008-04-29 Lam Research Corporation Confinement ring drive
US7732728B2 (en) * 2007-01-17 2010-06-08 Lam Research Corporation Apparatuses for adjusting electrode gap in capacitively-coupled RF plasma reactor
US8216418B2 (en) * 2007-06-13 2012-07-10 Lam Research Corporation Electrode assembly and plasma processing chamber utilizing thermally conductive gasket and o-rings
FR2921538B1 (fr) * 2007-09-20 2009-11-13 Air Liquide Dispositifs generateurs de plasma micro-ondes et torches a plasma
US8519724B2 (en) * 2007-10-05 2013-08-27 Lam Research Corporation Electrode for use in measuring dielectric properties of parts
US8187414B2 (en) 2007-10-12 2012-05-29 Lam Research Corporation Anchoring inserts, electrode assemblies, and plasma processing chambers
JP5759177B2 (ja) * 2008-02-08 2015-08-05 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ プラズマ処理装置、半導体基板を処理する方法、および軸直角変位ベローズユニット
CN102027574B (zh) * 2008-02-08 2014-09-10 朗姆研究公司 等离子体处理室部件的保护性涂层及其使用方法
US8187413B2 (en) * 2008-03-18 2012-05-29 Lam Research Corporation Electrode assembly and plasma processing chamber utilizing thermally conductive gasket
US8900404B2 (en) * 2008-06-10 2014-12-02 Lam Research Corporation Plasma processing systems with mechanisms for controlling temperatures of components
CN101351076B (zh) * 2008-09-16 2011-08-17 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体处理设备
TWI500097B (zh) * 2009-02-23 2015-09-11 韓美半導體股份有限公司 處理半導體封裝體之系統
KR20180049208A (ko) * 2009-08-31 2018-05-10 램 리써치 코포레이션 무선 주파수 (ｒｆ) 접지 복귀 장치들
US8992722B2 (en) * 2009-09-01 2015-03-31 Lam Research Corporation Direct drive arrangement to control confinement rings positioning and methods thereof
US8414736B2 (en) * 2009-09-03 2013-04-09 Applied Materials, Inc. Plasma reactor with tiltable overhead RF inductive source
US8501631B2 (en) 2009-11-19 2013-08-06 Lam Research Corporation Plasma processing system control based on RF voltage
JP5432686B2 (ja) * 2009-12-03 2014-03-05 東京エレクトロン株式会社 プラズマ処理装置
US8652297B2 (en) 2010-08-03 2014-02-18 Applied Materials, Inc. Symmetric VHF plasma power coupler with active uniformity steering
US9076826B2 (en) 2010-09-24 2015-07-07 Lam Research Corporation Plasma confinement ring assembly for plasma processing chambers
US11171008B2 (en) 2011-03-01 2021-11-09 Applied Materials, Inc. Abatement and strip process chamber in a dual load lock configuration
JP6114698B2 (ja) 2011-03-01 2017-04-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ デュアルロードロック構成内の除害及びストリップ処理チャンバ
CN203205393U (zh) 2011-03-01 2013-09-18 应用材料公司 用于转移基板及限制自由基的箍组件
TW201325326A (zh) 2011-10-05 2013-06-16 Applied Materials Inc 電漿處理設備及其基板支撐組件
US10586686B2 (en) 2011-11-22 2020-03-10 Law Research Corporation Peripheral RF feed and symmetric RF return for symmetric RF delivery
US9396908B2 (en) 2011-11-22 2016-07-19 Lam Research Corporation Systems and methods for controlling a plasma edge region
SG10201604037TA (en) * 2011-11-24 2016-07-28 Lam Res Corp Symmetric rf return path liner
WO2013078434A1 (en) * 2011-11-24 2013-05-30 Lam Research Corporation Plasma processing chamber with flexible symmetric rf return strap
US9502216B2 (en) 2013-01-31 2016-11-22 Lam Research Corporation Using modeling to determine wafer bias associated with a plasma system
US9462672B2 (en) 2012-02-22 2016-10-04 Lam Research Corporation Adjustment of power and frequency based on three or more states
US9197196B2 (en) 2012-02-22 2015-11-24 Lam Research Corporation State-based adjustment of power and frequency
US9171699B2 (en) 2012-02-22 2015-10-27 Lam Research Corporation Impedance-based adjustment of power and frequency
US9320126B2 (en) 2012-12-17 2016-04-19 Lam Research Corporation Determining a value of a variable on an RF transmission model
US10128090B2 (en) 2012-02-22 2018-11-13 Lam Research Corporation RF impedance model based fault detection
US9114666B2 (en) 2012-02-22 2015-08-25 Lam Research Corporation Methods and apparatus for controlling plasma in a plasma processing system
US9295148B2 (en) 2012-12-14 2016-03-22 Lam Research Corporation Computation of statistics for statistical data decimation
US9368329B2 (en) 2012-02-22 2016-06-14 Lam Research Corporation Methods and apparatus for synchronizing RF pulses in a plasma processing system
US9530620B2 (en) 2013-03-15 2016-12-27 Lam Research Corporation Dual control modes
US9842725B2 (en) 2013-01-31 2017-12-12 Lam Research Corporation Using modeling to determine ion energy associated with a plasma system
US10325759B2 (en) 2012-02-22 2019-06-18 Lam Research Corporation Multiple control modes
US9390893B2 (en) 2012-02-22 2016-07-12 Lam Research Corporation Sub-pulsing during a state
US10157729B2 (en) 2012-02-22 2018-12-18 Lam Research Corporation Soft pulsing
CN106847737B (zh) 2012-02-29 2020-11-13 应用材料公司 配置中的除污及剥除处理腔室
US8895452B2 (en) 2012-05-31 2014-11-25 Lam Research Corporation Substrate support providing gap height and planarization adjustment in plasma processing chamber
US9408288B2 (en) 2012-09-14 2016-08-02 Lam Research Corporation Edge ramping
US9043525B2 (en) 2012-12-14 2015-05-26 Lam Research Corporation Optimizing a rate of transfer of data between an RF generator and a host system within a plasma tool
US9155182B2 (en) 2013-01-11 2015-10-06 Lam Research Corporation Tuning a parameter associated with plasma impedance
US9620337B2 (en) 2013-01-31 2017-04-11 Lam Research Corporation Determining a malfunctioning device in a plasma system
US9779196B2 (en) 2013-01-31 2017-10-03 Lam Research Corporation Segmenting a model within a plasma system
US9107284B2 (en) 2013-03-13 2015-08-11 Lam Research Corporation Chamber matching using voltage control mode
US9119283B2 (en) 2013-03-14 2015-08-25 Lam Research Corporation Chamber matching for power control mode
CN104103549B (zh) * 2013-04-07 2018-05-18 盛美半导体设备（上海）有限公司 半导体工艺腔室
CN103227091B (zh) * 2013-04-19 2016-01-27 中微半导体设备(上海)有限公司 等离子体处理装置
US9859145B2 (en) 2013-07-17 2018-01-02 Lam Research Corporation Cooled pin lifter paddle for semiconductor substrate processing apparatus
US9502221B2 (en) 2013-07-26 2016-11-22 Lam Research Corporation Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching
US9378971B1 (en) 2014-12-04 2016-06-28 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US9543158B2 (en) 2014-12-04 2017-01-10 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US10297459B2 (en) 2013-09-20 2019-05-21 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
KR20150052996A (ko) * 2013-11-07 2015-05-15 삼성디스플레이 주식회사 기판 이송 장치 및 이를 포함하는 박막 증착 장치
US10217615B2 (en) 2013-12-16 2019-02-26 Lam Research Corporation Plasma processing apparatus and component thereof including an optical fiber for determining a temperature thereof
US9594105B2 (en) 2014-01-10 2017-03-14 Lam Research Corporation Cable power loss determination for virtual metrology
WO2015119737A1 (en) * 2014-02-06 2015-08-13 Applied Materials, Inc. Inline dps chamber hardware design to enable axis symmetry for improved flow conductance and uniformity
WO2015156951A1 (en) * 2014-04-09 2015-10-15 Applied Materials, Inc. Symmetric chamber body design architecture to address variable process volume with improved flow uniformity/gas conductance
US10950421B2 (en) 2014-04-21 2021-03-16 Lam Research Corporation Using modeling for identifying a location of a fault in an RF transmission system for a plasma system
JP6298373B2 (ja) * 2014-07-11 2018-03-20 東京エレクトロン株式会社 プラズマ処理装置および上部電極アセンブリ
JP6375163B2 (ja) * 2014-07-11 2018-08-15 東京エレクトロン株式会社 プラズマ処理装置および上部電極アセンブリ
US9609730B2 (en) 2014-11-12 2017-03-28 Lam Research Corporation Adjustment of VUV emission of a plasma via collisional resonant energy transfer to an energy absorber gas
US9620377B2 (en) 2014-12-04 2017-04-11 Lab Research Corporation Technique to deposit metal-containing sidewall passivation for high aspect ratio cylinder etch
US10170324B2 (en) 2014-12-04 2019-01-01 Lam Research Corporation Technique to tune sidewall passivation deposition conformality for high aspect ratio cylinder etch
US9997373B2 (en) 2014-12-04 2018-06-12 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US9384998B2 (en) 2014-12-04 2016-07-05 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US9887097B2 (en) 2014-12-04 2018-02-06 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
CN105742203B (zh) * 2014-12-10 2019-08-13 中微半导体设备(上海)股份有限公司 一种改变气体流动模式的装置及晶圆处理方法和设备
US9536749B2 (en) 2014-12-15 2017-01-03 Lam Research Corporation Ion energy control by RF pulse shape
US9396961B2 (en) 2014-12-22 2016-07-19 Lam Research Corporation Integrated etch/clean for dielectric etch applications
US9543148B1 (en) 2015-09-01 2017-01-10 Lam Research Corporation Mask shrink layer for high aspect ratio dielectric etch
US10534257B2 (en) 2017-05-01 2020-01-14 Lam Research Corporation Layout pattern proximity correction through edge placement error prediction
US10276398B2 (en) 2017-08-02 2019-04-30 Lam Research Corporation High aspect ratio selective lateral etch using cyclic passivation and etching
US10847374B2 (en) 2017-10-31 2020-11-24 Lam Research Corporation Method for etching features in a stack
US10658174B2 (en) 2017-11-21 2020-05-19 Lam Research Corporation Atomic layer deposition and etch for reducing roughness
US10361092B1 (en) 2018-02-23 2019-07-23 Lam Research Corporation Etching features using metal passivation
CN110610841B (zh) * 2018-06-14 2022-01-28 中微半导体设备(上海)股份有限公司 一种等离子体约束组件及其所在的处理装置
US10515821B1 (en) 2018-06-26 2019-12-24 Lam Research Corporation Method of achieving high selectivity for high aspect ratio dielectric etch
US10741407B2 (en) 2018-10-19 2020-08-11 Lam Research Corporation Reduction of sidewall notching for high aspect ratio 3D NAND etch
JP2020105590A (ja) * 2018-12-27 2020-07-09 キオクシア株式会社 基板処理装置および基板処理方法
WO2020243342A1 (en) 2019-05-29 2020-12-03 Lam Research Corporation High selectivity, low stress, and low hydrogen diamond-like carbon hardmasks by high power pulsed low frequency rf
CN112309807B (zh) * 2019-08-02 2022-12-30 中微半导体设备(上海)股份有限公司 等离子体刻蚀设备
KR102888630B1 (ko) 2019-08-30 2025-11-19 램 리써치 코포레이션 저압에서의 고밀도, 고모듈러스, 및 고경도 비정질 탄소 막들
US12479004B2 (en) 2019-10-18 2025-11-25 Lam Research Corporation Selective attachment to enhance SiO2:SiNx etch selectivity
US11335543B2 (en) * 2020-03-25 2022-05-17 Applied Materials, Inc. RF return path for reduction of parasitic plasma
CN111501025B (zh) * 2020-04-23 2022-05-27 北京北方华创微电子装备有限公司 沉积设备
JP7417262B2 (ja) * 2020-05-11 2024-01-18 株式会社イー・エム・ディー プラズマ生成装置
CN113808897B (zh) * 2020-06-12 2023-10-31 中微半导体设备(上海)股份有限公司 一种等离子体处理装置及其调节方法
CN112349576B (zh) * 2020-10-20 2022-09-16 北京北方华创微电子装备有限公司 下电极组件及半导体工艺设备
US12400834B2 (en) * 2021-05-07 2025-08-26 Taiwan Semiconductor Manufacturing Company, Ltd. Cantilever with etch chamber flow design
WO2023042487A1 (ja) * 2021-09-16 2023-03-23 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP2024040776A (ja) * 2022-09-13 2024-03-26 キオクシア株式会社 成膜装置、および半導体装置の製造方法

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US601960A (en) * 1898-04-05 hartmann
US5522937A (en) * 1994-05-03 1996-06-04 Applied Materials, Inc. Welded susceptor assembly
TW323387B (enExample) 1995-06-07 1997-12-21 Tokyo Electron Co Ltd
US5534751A (en) * 1995-07-10 1996-07-09 Lam Research Corporation Plasma etching apparatus utilizing plasma confinement
US5948704A (en) 1996-06-05 1999-09-07 Lam Research Corporation High flow vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
US5820723A (en) 1996-06-05 1998-10-13 Lam Research Corporation Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
US6170428B1 (en) 1996-07-15 2001-01-09 Applied Materials, Inc. Symmetric tunable inductively coupled HDP-CVD reactor
JP3565311B2 (ja) 1997-12-17 2004-09-15 アルプス電気株式会社 プラズマ処理装置
US6019060A (en) 1998-06-24 2000-02-01 Lam Research Corporation Cam-based arrangement for positioning confinement rings in a plasma processing chamber
JP4307628B2 (ja) * 1999-05-19 2009-08-05 キヤノンアネルバ株式会社 Ｃｃｐ反応容器の平板型ガス導入装置
JP2001077088A (ja) 1999-09-02 2001-03-23 Tokyo Electron Ltd プラズマ処理装置
WO2001052302A1 (en) 2000-01-10 2001-07-19 Tokyo Electron Limited Segmented electrode assembly and method for plasma processing
JP3531612B2 (ja) 2000-01-26 2004-05-31 松下電器産業株式会社 ワークのプラズマ処理方法
JP2001214277A (ja) * 2000-01-31 2001-08-07 Canon Inc 堆積膜形成装置および堆積膜形成方法
US6492774B1 (en) 2000-10-04 2002-12-10 Lam Research Corporation Wafer area pressure control for plasma confinement
WO2002059933A2 (en) 2001-01-22 2002-08-01 Tokyo Electron Limited Vertically translatable chuck assembly and method for a plasma reactor system
US6778258B2 (en) * 2001-10-19 2004-08-17 Asml Holding N.V. Wafer handling system for use in lithography patterning
JP4574987B2 (ja) * 2002-01-10 2010-11-04 東京エレクトロン株式会社 処理装置
JP2003224077A (ja) 2002-01-30 2003-08-08 Tokyo Electron Ltd プラズマ処理装置、電極部材、バッフル板の製造方法、処理装置、および、表面処理方法
CN1190544C (zh) * 2002-12-12 2005-02-23 东华大学 一种用于纤维表面改性的常压低温等离子体处理装置
US7059268B2 (en) * 2002-12-20 2006-06-13 Tokyo Electron Limited Method, apparatus and magnet assembly for enhancing and localizing a capacitively coupled plasma
US6830642B2 (en) 2003-03-17 2004-12-14 Charles E. Greenhill Method and apparatus for applying pressure sensitive adhesive labels to a series of objects moving in multiple columns
JP4173389B2 (ja) 2003-03-19 2008-10-29 東京エレクトロン株式会社 プラズマ処理装置
JP4554902B2 (ja) 2003-09-02 2010-09-29 株式会社日立製作所 サービス提供システム
US7375946B2 (en) * 2004-08-16 2008-05-20 Applied Materials, Inc. Method and apparatus for dechucking a substrate
JP2006253448A (ja) * 2005-03-11 2006-09-21 Hitachi Kokusai Electric Inc 基板処理装置
US7732728B2 (en) * 2007-01-17 2010-06-08 Lam Research Corporation Apparatuses for adjusting electrode gap in capacitively-coupled RF plasma reactor
US8435379B2 (en) * 2007-05-08 2013-05-07 Applied Materials, Inc. Substrate cleaning chamber and cleaning and conditioning methods

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