|
US7390755B1
(en)
|
2002-03-26 |
2008-06-24 |
Novellus Systems, Inc. |
Methods for post etch cleans
|
|
US7288484B1
(en)
|
2004-07-13 |
2007-10-30 |
Novellus Systems, Inc. |
Photoresist strip method for low-k dielectrics
|
|
US8193096B2
(en)
|
2004-12-13 |
2012-06-05 |
Novellus Systems, Inc. |
High dose implantation strip (HDIS) in H2 base chemistry
|
|
US8129281B1
(en)
|
2005-05-12 |
2012-03-06 |
Novellus Systems, Inc. |
Plasma based photoresist removal system for cleaning post ash residue
|
|
US7740768B1
(en)
*
|
2006-10-12 |
2010-06-22 |
Novellus Systems, Inc. |
Simultaneous front side ash and backside clean
|
|
US8435895B2
(en)
|
2007-04-04 |
2013-05-07 |
Novellus Systems, Inc. |
Methods for stripping photoresist and/or cleaning metal regions
|
|
JP5759177B2
(ja)
|
2008-02-08 |
2015-08-05 |
ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ |
プラズマ処理装置、半導体基板を処理する方法、および軸直角変位ベローズユニット
|
|
US8900404B2
(en)
*
|
2008-06-10 |
2014-12-02 |
Lam Research Corporation |
Plasma processing systems with mechanisms for controlling temperatures of components
|
|
CN101351076B
(zh)
*
|
2008-09-16 |
2011-08-17 |
北京北方微电子基地设备工艺研究中心有限责任公司 |
等离子体处理设备
|
|
US8591661B2
(en)
|
2009-12-11 |
2013-11-26 |
Novellus Systems, Inc. |
Low damage photoresist strip method for low-K dielectrics
|
|
JP4523661B1
(ja)
*
|
2009-03-10 |
2010-08-11 |
三井造船株式会社 |
原子層堆積装置及び薄膜形成方法
|
|
US9111729B2
(en)
|
2009-12-03 |
2015-08-18 |
Lam Research Corporation |
Small plasma chamber systems and methods
|
|
JP5770740B2
(ja)
|
2009-12-11 |
2015-08-26 |
ノベラス・システムズ・インコーポレーテッドＮｏｖｅｌｌｕｓ Ｓｙｓｔｅｍｓ Ｉｎｃｏｒｐｏｒａｔｅｄ |
高ドーズインプラントストリップの前に行われる、シリコンを保護するためのパッシベーションプロセスの改善方法およびそのための装置
|
|
US20110143548A1
(en)
|
2009-12-11 |
2011-06-16 |
David Cheung |
Ultra low silicon loss high dose implant strip
|
|
JP5422416B2
(ja)
*
|
2010-01-28 |
2014-02-19 |
株式会社日立製作所 |
試料搬送装置
|
|
US9190289B2
(en)
|
2010-02-26 |
2015-11-17 |
Lam Research Corporation |
System, method and apparatus for plasma etch having independent control of ion generation and dissociation of process gas
|
|
US9155181B2
(en)
|
2010-08-06 |
2015-10-06 |
Lam Research Corporation |
Distributed multi-zone plasma source systems, methods and apparatus
|
|
US9449793B2
(en)
|
2010-08-06 |
2016-09-20 |
Lam Research Corporation |
Systems, methods and apparatus for choked flow element extraction
|
|
US9967965B2
(en)
|
2010-08-06 |
2018-05-08 |
Lam Research Corporation |
Distributed, concentric multi-zone plasma source systems, methods and apparatus
|
|
US8999104B2
(en)
|
2010-08-06 |
2015-04-07 |
Lam Research Corporation |
Systems, methods and apparatus for separate plasma source control
|
|
JP6114698B2
(ja)
|
2011-03-01 |
2017-04-12 |
アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ |
デュアルロードロック構成内の除害及びストリップ処理チャンバ
|
|
US11171008B2
(en)
|
2011-03-01 |
2021-11-09 |
Applied Materials, Inc. |
Abatement and strip process chamber in a dual load lock configuration
|
|
CN203205393U
(zh)
|
2011-03-01 |
2013-09-18 |
应用材料公司 |
用于转移基板及限制自由基的箍组件
|
|
US20120318455A1
(en)
*
|
2011-06-14 |
2012-12-20 |
Andreas Fischer |
Passive compensation for temperature-dependent wafer gap changes in plasma processing systems
|
|
US9613825B2
(en)
|
2011-08-26 |
2017-04-04 |
Novellus Systems, Inc. |
Photoresist strip processes for improved device integrity
|
|
TW201325326A
(zh)
*
|
2011-10-05 |
2013-06-16 |
Applied Materials Inc |
電漿處理設備及其基板支撐組件
|
|
US9177762B2
(en)
|
2011-11-16 |
2015-11-03 |
Lam Research Corporation |
System, method and apparatus of a wedge-shaped parallel plate plasma reactor for substrate processing
|
|
US10283325B2
(en)
|
2012-10-10 |
2019-05-07 |
Lam Research Corporation |
Distributed multi-zone plasma source systems, methods and apparatus
|
|
US9083182B2
(en)
|
2011-11-21 |
2015-07-14 |
Lam Research Corporation |
Bypass capacitors for high voltage bias power in the mid frequency RF range
|
|
US8872525B2
(en)
|
2011-11-21 |
2014-10-28 |
Lam Research Corporation |
System, method and apparatus for detecting DC bias in a plasma processing chamber
|
|
US9263240B2
(en)
|
2011-11-22 |
2016-02-16 |
Lam Research Corporation |
Dual zone temperature control of upper electrodes
|
|
US9396908B2
(en)
|
2011-11-22 |
2016-07-19 |
Lam Research Corporation |
Systems and methods for controlling a plasma edge region
|
|
US8898889B2
(en)
*
|
2011-11-22 |
2014-12-02 |
Lam Research Corporation |
Chuck assembly for plasma processing
|
|
US10586686B2
(en)
|
2011-11-22 |
2020-03-10 |
Law Research Corporation |
Peripheral RF feed and symmetric RF return for symmetric RF delivery
|
|
KR102068853B1
(ko)
*
|
2011-11-23 |
2020-01-22 |
램 리써치 코포레이션 |
Rf 스트랩 입력을 갖는 대칭적 rf 리턴 및 주변 rf 피드
|
|
KR102061367B1
(ko)
*
|
2011-11-23 |
2020-01-02 |
램 리써치 코포레이션 |
대칭적 ｒｆ 전달을 위한 주변부에서의 ｒｆ 공급 및 대칭적 ｒｆ 복귀
|
|
WO2013078434A1
(en)
|
2011-11-24 |
2013-05-30 |
Lam Research Corporation |
Plasma processing chamber with flexible symmetric rf return strap
|
|
CN106847737B
(zh)
|
2012-02-29 |
2020-11-13 |
应用材料公司 |
配置中的除污及剥除处理腔室
|
|
US8895452B2
(en)
*
|
2012-05-31 |
2014-11-25 |
Lam Research Corporation |
Substrate support providing gap height and planarization adjustment in plasma processing chamber
|
|
US10297459B2
(en)
|
2013-09-20 |
2019-05-21 |
Lam Research Corporation |
Technique to deposit sidewall passivation for high aspect ratio cylinder etch
|
|
US9378971B1
(en)
|
2014-12-04 |
2016-06-28 |
Lam Research Corporation |
Technique to deposit sidewall passivation for high aspect ratio cylinder etch
|
|
US9543158B2
(en)
|
2014-12-04 |
2017-01-10 |
Lam Research Corporation |
Technique to deposit sidewall passivation for high aspect ratio cylinder etch
|
|
WO2015119737A1
(en)
|
2014-02-06 |
2015-08-13 |
Applied Materials, Inc. |
Inline dps chamber hardware design to enable axis symmetry for improved flow conductance and uniformity
|
|
US20150243483A1
(en)
*
|
2014-02-21 |
2015-08-27 |
Lam Research Corporation |
Tunable rf feed structure for plasma processing
|
|
US9741575B2
(en)
*
|
2014-03-10 |
2017-08-22 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
CVD apparatus with gas delivery ring
|
|
WO2015156951A1
(en)
*
|
2014-04-09 |
2015-10-15 |
Applied Materials, Inc. |
Symmetric chamber body design architecture to address variable process volume with improved flow uniformity/gas conductance
|
|
US9514954B2
(en)
|
2014-06-10 |
2016-12-06 |
Lam Research Corporation |
Peroxide-vapor treatment for enhancing photoresist-strip performance and modifying organic films
|
|
JP6541374B2
(ja)
*
|
2014-07-24 |
2019-07-10 |
東京エレクトロン株式会社 |
基板処理装置
|
|
DE102014220220B4
(de)
*
|
2014-10-07 |
2018-05-30 |
Carl Zeiss Smt Gmbh |
Vakuum-Lineardurchführung und Vakuum-System damit
|
|
US9609730B2
(en)
*
|
2014-11-12 |
2017-03-28 |
Lam Research Corporation |
Adjustment of VUV emission of a plasma via collisional resonant energy transfer to an energy absorber gas
|
|
US9773649B2
(en)
|
2014-11-17 |
2017-09-26 |
Lam Research Corporation |
Dry development and image transfer of si-containing self-assembled block copolymers
|
|
US9384998B2
(en)
|
2014-12-04 |
2016-07-05 |
Lam Research Corporation |
Technique to deposit sidewall passivation for high aspect ratio cylinder etch
|
|
US9620377B2
(en)
|
2014-12-04 |
2017-04-11 |
Lab Research Corporation |
Technique to deposit metal-containing sidewall passivation for high aspect ratio cylinder etch
|
|
US10170324B2
(en)
|
2014-12-04 |
2019-01-01 |
Lam Research Corporation |
Technique to tune sidewall passivation deposition conformality for high aspect ratio cylinder etch
|
|
US9997373B2
(en)
|
2014-12-04 |
2018-06-12 |
Lam Research Corporation |
Technique to deposit sidewall passivation for high aspect ratio cylinder etch
|
|
US9887097B2
(en)
|
2014-12-04 |
2018-02-06 |
Lam Research Corporation |
Technique to deposit sidewall passivation for high aspect ratio cylinder etch
|
|
US20160181116A1
(en)
|
2014-12-18 |
2016-06-23 |
Lam Research Corporation |
Selective nitride etch
|
|
US10658222B2
(en)
|
2015-01-16 |
2020-05-19 |
Lam Research Corporation |
Moveable edge coupling ring for edge process control during semiconductor wafer processing
|
|
US11333246B2
(en)
|
2015-01-26 |
2022-05-17 |
Applied Materials, Inc. |
Chamber body design architecture for next generation advanced plasma technology
|
|
US10049862B2
(en)
*
|
2015-04-17 |
2018-08-14 |
Lam Research Corporation |
Chamber with vertical support stem for symmetric conductance and RF delivery
|
|
US9673025B2
(en)
*
|
2015-07-27 |
2017-06-06 |
Lam Research Corporation |
Electrostatic chuck including embedded faraday cage for RF delivery and associated methods for operation, monitoring, and control
|
|
US10957561B2
(en)
|
2015-07-30 |
2021-03-23 |
Lam Research Corporation |
Gas delivery system
|
|
US9543148B1
(en)
|
2015-09-01 |
2017-01-10 |
Lam Research Corporation |
Mask shrink layer for high aspect ratio dielectric etch
|
|
US9837286B2
(en)
|
2015-09-04 |
2017-12-05 |
Lam Research Corporation |
Systems and methods for selectively etching tungsten in a downstream reactor
|
|
US10192751B2
(en)
|
2015-10-15 |
2019-01-29 |
Lam Research Corporation |
Systems and methods for ultrahigh selective nitride etch
|
|
US10825659B2
(en)
|
2016-01-07 |
2020-11-03 |
Lam Research Corporation |
Substrate processing chamber including multiple gas injection points and dual injector
|
|
US10147588B2
(en)
|
2016-02-12 |
2018-12-04 |
Lam Research Corporation |
System and method for increasing electron density levels in a plasma of a substrate processing system
|
|
US10699878B2
(en)
|
2016-02-12 |
2020-06-30 |
Lam Research Corporation |
Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring
|
|
US10651015B2
(en)
|
2016-02-12 |
2020-05-12 |
Lam Research Corporation |
Variable depth edge ring for etch uniformity control
|
|
US10438833B2
(en)
|
2016-02-16 |
2019-10-08 |
Lam Research Corporation |
Wafer lift ring system for wafer transfer
|
|
US10410832B2
(en)
|
2016-08-19 |
2019-09-10 |
Lam Research Corporation |
Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment
|
|
CN107785284B
(zh)
*
|
2016-08-25 |
2020-06-19 |
北京北方华创微电子装备有限公司 |
开盖机构和半导体加工设备
|
|
US10079168B2
(en)
*
|
2016-11-08 |
2018-09-18 |
Lam Research Corporation |
Ceramic electrostatic chuck including embedded Faraday cage for RF delivery and associated methods for operation, monitoring, and control
|
|
US10892179B2
(en)
*
|
2016-11-08 |
2021-01-12 |
Lam Research Corporation |
Electrostatic chuck including clamp electrode assembly forming portion of Faraday cage for RF delivery and associated methods
|
|
US10534257B2
(en)
|
2017-05-01 |
2020-01-14 |
Lam Research Corporation |
Layout pattern proximity correction through edge placement error prediction
|
|
US10796912B2
(en)
|
2017-05-16 |
2020-10-06 |
Lam Research Corporation |
Eliminating yield impact of stochastics in lithography
|
|
US10276398B2
(en)
|
2017-08-02 |
2019-04-30 |
Lam Research Corporation |
High aspect ratio selective lateral etch using cyclic passivation and etching
|
|
US10510575B2
(en)
|
2017-09-20 |
2019-12-17 |
Applied Materials, Inc. |
Substrate support with multiple embedded electrodes
|
|
US10763083B2
(en)
|
2017-10-06 |
2020-09-01 |
Lam Research Corporation |
High energy atomic layer etching
|
|
CN107622943A
(zh)
*
|
2017-10-13 |
2018-01-23 |
德淮半导体有限公司 |
半导体刻蚀机台
|
|
US10847374B2
(en)
|
2017-10-31 |
2020-11-24 |
Lam Research Corporation |
Method for etching features in a stack
|
|
US10658174B2
(en)
|
2017-11-21 |
2020-05-19 |
Lam Research Corporation |
Atomic layer deposition and etch for reducing roughness
|
|
CN118380375A
(zh)
|
2017-11-21 |
2024-07-23 |
朗姆研究公司 |
底部边缘环和中部边缘环
|
|
US10361092B1
(en)
|
2018-02-23 |
2019-07-23 |
Lam Research Corporation |
Etching features using metal passivation
|
|
EP3776636B1
(en)
|
2018-03-30 |
2025-05-07 |
Lam Research Corporation |
Atomic layer etching and smoothing of refractory metals and other high surface binding energy materials
|
|
US10555412B2
(en)
|
2018-05-10 |
2020-02-04 |
Applied Materials, Inc. |
Method of controlling ion energy distribution using a pulse generator with a current-return output stage
|
|
US10934862B2
(en)
|
2018-08-22 |
2021-03-02 |
Rolls-Royce Plc |
Turbine wheel assembly
|
|
US10927957B2
(en)
|
2018-08-22 |
2021-02-23 |
Rolls-Royce North American Technologies Inc. |
Deflection seal system
|
|
JP6833784B2
(ja)
*
|
2018-09-28 |
2021-02-24 |
芝浦メカトロニクス株式会社 |
プラズマ処理装置
|
|
JP6921796B2
(ja)
*
|
2018-09-28 |
2021-08-18 |
芝浦メカトロニクス株式会社 |
プラズマ処理装置
|
|
CN113039486B
(zh)
|
2018-11-14 |
2024-11-12 |
朗姆研究公司 |
可用于下一代光刻法中的硬掩模制作方法
|
|
US11476145B2
(en)
|
2018-11-20 |
2022-10-18 |
Applied Materials, Inc. |
Automatic ESC bias compensation when using pulsed DC bias
|
|
WO2020117594A1
(en)
|
2018-12-04 |
2020-06-11 |
Applied Materials, Inc. |
Substrate supports including metal-ceramic interfaces
|
|
CN111326389B
(zh)
*
|
2018-12-17 |
2023-06-16 |
中微半导体设备(上海)股份有限公司 |
一种电容耦合等离子体刻蚀设备
|
|
CN111326387B
(zh)
*
|
2018-12-17 |
2023-04-21 |
中微半导体设备(上海)股份有限公司 |
一种电容耦合等离子体刻蚀设备
|
|
CN113227909B
(zh)
|
2018-12-20 |
2025-07-04 |
朗姆研究公司 |
抗蚀剂的干式显影
|
|
JP7451540B2
(ja)
|
2019-01-22 |
2024-03-18 |
アプライド マテリアルズ インコーポレイテッド |
パルス状電圧波形を制御するためのフィードバックループ
|
|
US11508554B2
(en)
|
2019-01-24 |
2022-11-22 |
Applied Materials, Inc. |
High voltage filter assembly
|
|
JP7198694B2
(ja)
*
|
2019-03-18 |
2023-01-04 |
東京エレクトロン株式会社 |
基板リフト機構、基板支持器、及び基板処理装置
|
|
TW202514246A
(zh)
|
2019-03-18 |
2025-04-01 |
美商蘭姆研究公司 |
基板處理方法與設備
|
|
US12062538B2
(en)
|
2019-04-30 |
2024-08-13 |
Lam Research Corporation |
Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement
|
|
TWI869221B
(zh)
|
2019-06-26 |
2025-01-01 |
美商蘭姆研究公司 |
利用鹵化物化學品的光阻顯影
|
|
KR20250007037A
(ko)
|
2020-01-15 |
2025-01-13 |
램 리써치 코포레이션 |
포토레지스트 부착 및 선량 감소를 위한 하부층
|
|
WO2021173557A1
(en)
|
2020-02-28 |
2021-09-02 |
Lam Research Corporation |
Multi-layer hardmask for defect reduction in euv patterning
|
|
JP7466686B2
(ja)
|
2020-03-23 |
2024-04-12 |
ラム リサーチ コーポレーション |
基板処理システムにおける中間リング腐食補償
|
|
TWI876020B
(zh)
|
2020-04-03 |
2025-03-11 |
美商蘭姆研究公司 |
處理光阻的方法、以及用於沉積薄膜的設備
|
|
CN111725111B
(zh)
*
|
2020-06-24 |
2023-08-18 |
北京北方华创微电子装备有限公司 |
半导体工艺设备的反应腔室及半导体工艺设备
|
|
CN116626993A
(zh)
|
2020-07-07 |
2023-08-22 |
朗姆研究公司 |
用于图案化辐射光致抗蚀剂图案化的集成干燥工艺
|
|
JP2023535291A
(ja)
*
|
2020-07-24 |
2023-08-17 |
ラム リサーチ コーポレーション |
ウェハ処理システム用の高コンダクタンス真空バルブ
|
|
US11462389B2
(en)
|
2020-07-31 |
2022-10-04 |
Applied Materials, Inc. |
Pulsed-voltage hardware assembly for use in a plasma processing system
|
|
CN112259429B
(zh)
*
|
2020-09-30 |
2024-06-21 |
北京北方华创微电子装备有限公司 |
一种半导体工艺设备
|
|
CN112108720B
(zh)
*
|
2020-10-18 |
2021-12-17 |
浙江启程汽车部件有限公司 |
一种波纹管预装配前覆层剥离设备
|
|
JP7562696B2
(ja)
|
2020-11-13 |
2024-10-07 |
ラム リサーチ コーポレーション |
フォトレジストのドライ除去用プロセスツール
|
|
US11901157B2
(en)
|
2020-11-16 |
2024-02-13 |
Applied Materials, Inc. |
Apparatus and methods for controlling ion energy distribution
|
|
US11798790B2
(en)
|
2020-11-16 |
2023-10-24 |
Applied Materials, Inc. |
Apparatus and methods for controlling ion energy distribution
|
|
US11495470B1
(en)
|
2021-04-16 |
2022-11-08 |
Applied Materials, Inc. |
Method of enhancing etching selectivity using a pulsed plasma
|
|
US11948780B2
(en)
|
2021-05-12 |
2024-04-02 |
Applied Materials, Inc. |
Automatic electrostatic chuck bias compensation during plasma processing
|
|
US11791138B2
(en)
|
2021-05-12 |
2023-10-17 |
Applied Materials, Inc. |
Automatic electrostatic chuck bias compensation during plasma processing
|
|
US11967483B2
(en)
|
2021-06-02 |
2024-04-23 |
Applied Materials, Inc. |
Plasma excitation with ion energy control
|
|
US20220399185A1
(en)
|
2021-06-09 |
2022-12-15 |
Applied Materials, Inc. |
Plasma chamber and chamber component cleaning methods
|
|
US12148595B2
(en)
|
2021-06-09 |
2024-11-19 |
Applied Materials, Inc. |
Plasma uniformity control in pulsed DC plasma chamber
|
|
US11810760B2
(en)
|
2021-06-16 |
2023-11-07 |
Applied Materials, Inc. |
Apparatus and method of ion current compensation
|
|
US11569066B2
(en)
|
2021-06-23 |
2023-01-31 |
Applied Materials, Inc. |
Pulsed voltage source for plasma processing applications
|
|
US11776788B2
(en)
|
2021-06-28 |
2023-10-03 |
Applied Materials, Inc. |
Pulsed voltage boost for substrate processing
|
|
US11476090B1
(en)
|
2021-08-24 |
2022-10-18 |
Applied Materials, Inc. |
Voltage pulse time-domain multiplexing
|
|
US12106938B2
(en)
|
2021-09-14 |
2024-10-01 |
Applied Materials, Inc. |
Distortion current mitigation in a radio frequency plasma processing chamber
|
|
US11694876B2
(en)
|
2021-12-08 |
2023-07-04 |
Applied Materials, Inc. |
Apparatus and method for delivering a plurality of waveform signals during plasma processing
|
|
JP7737945B2
(ja)
*
|
2022-03-25 |
2025-09-11 |
住友電気工業株式会社 |
ドライエッチング装置および半導体基板の製造方法
|
|
US11972924B2
(en)
|
2022-06-08 |
2024-04-30 |
Applied Materials, Inc. |
Pulsed voltage source for plasma processing applications
|
|
US12315732B2
(en)
|
2022-06-10 |
2025-05-27 |
Applied Materials, Inc. |
Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
|
|
TWI815519B
(zh)
*
|
2022-06-24 |
2023-09-11 |
樂華科技股份有限公司 |
智慧晶圓傳送設備及其方法
|
|
US12272524B2
(en)
|
2022-09-19 |
2025-04-08 |
Applied Materials, Inc. |
Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
|
|
US12111341B2
(en)
|
2022-10-05 |
2024-10-08 |
Applied Materials, Inc. |
In-situ electric field detection method and apparatus
|
|
US20250132188A1
(en)
*
|
2022-12-26 |
2025-04-24 |
Hitachi High-Tech Corporation |
Plasma processing apparatus
|
|
KR20250123420A
(ko)
*
|
2024-02-08 |
2025-08-18 |
피에스케이 주식회사 |
기판 처리 장치
|