JP5759177B2 - プラズマ処理装置、半導体基板を処理する方法、および軸直角変位ベローズユニット - Google Patents

プラズマ処理装置、半導体基板を処理する方法、および軸直角変位ベローズユニット Download PDF

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JP5759177B2
JP5759177B2 JP2010545887A JP2010545887A JP5759177B2 JP 5759177 B2 JP5759177 B2 JP 5759177B2 JP 2010545887 A JP2010545887 A JP 2010545887A JP 2010545887 A JP2010545887 A JP 2010545887A JP 5759177 B2 JP5759177 B2 JP 5759177B2
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plasma processing
processing apparatus
arm portion
plate
bellows
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JP2011511474A5 (enExample
JP2011511474A (ja
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タッパン・ジェイムズ・イー．
スティーブノット・スコット・ジェフリー
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP2010545887A 2008-02-08 2009-02-06 プラズマ処理装置、半導体基板を処理する方法、および軸直角変位ベローズユニット Active JP5759177B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US698508P 2008-02-08 2008-02-08
US61/006,985 2008-02-08
PCT/US2009/000784 WO2009099660A2 (en) 2008-02-08 2009-02-06 Adjustable gap capacitively coupled rf plasma reactor including lateral bellows and non-contact particle seal

Publications (3)

Publication Number Publication Date
JP2011511474A JP2011511474A (ja) 2011-04-07
JP2011511474A5 JP2011511474A5 (enExample) 2012-03-08
JP5759177B2 true JP5759177B2 (ja) 2015-08-05

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US (2) US8552334B2 (enExample)
JP (1) JP5759177B2 (enExample)
KR (1) KR101659095B1 (enExample)
CN (1) CN102084468B (enExample)
SG (1) SG188140A1 (enExample)
TW (1) TWI447833B (enExample)
WO (1) WO2009099660A2 (enExample)

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US20130340938A1 (en) 2013-12-26
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CN102084468B (zh) 2014-10-29
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