TWI447833B - 包含橫向伸縮囊及非接觸式粒子密封部的可調間隙電容耦合式射頻電漿反應器 - Google Patents

包含橫向伸縮囊及非接觸式粒子密封部的可調間隙電容耦合式射頻電漿反應器 Download PDF

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Publication number
TWI447833B
TWI447833B TW098104110A TW98104110A TWI447833B TW I447833 B TWI447833 B TW I447833B TW 098104110 A TW098104110 A TW 098104110A TW 98104110 A TW98104110 A TW 98104110A TW I447833 B TWI447833 B TW I447833B
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Taiwan
Prior art keywords
bellows
arm unit
plasma processing
processing apparatus
side wall
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TW098104110A
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English (en)
Chinese (zh)
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TW200943457A (en
Inventor
James E Tappan
Scott Jeffery Stevenot
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Lam Res Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
TW098104110A 2008-02-08 2009-02-09 包含橫向伸縮囊及非接觸式粒子密封部的可調間隙電容耦合式射頻電漿反應器 TWI447833B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US698508P 2008-02-08 2008-02-08

Publications (2)

Publication Number Publication Date
TW200943457A TW200943457A (en) 2009-10-16
TWI447833B true TWI447833B (zh) 2014-08-01

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TW098104110A TWI447833B (zh) 2008-02-08 2009-02-09 包含橫向伸縮囊及非接觸式粒子密封部的可調間隙電容耦合式射頻電漿反應器

Country Status (7)

Country Link
US (2) US8552334B2 (enExample)
JP (1) JP5759177B2 (enExample)
KR (1) KR101659095B1 (enExample)
CN (1) CN102084468B (enExample)
SG (1) SG188140A1 (enExample)
TW (1) TWI447833B (enExample)
WO (1) WO2009099660A2 (enExample)

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US8735765B2 (en) 2014-05-27
US8552334B2 (en) 2013-10-08
TW200943457A (en) 2009-10-16
US20090200268A1 (en) 2009-08-13
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WO2009099660A3 (en) 2009-10-01
US20130340938A1 (en) 2013-12-26
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