KR101488987B1 - 경질 결정 기판 연마 방법 및 유성 연마 슬러리 - Google Patents

경질 결정 기판 연마 방법 및 유성 연마 슬러리 Download PDF

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KR101488987B1
KR101488987B1 KR20070123289A KR20070123289A KR101488987B1 KR 101488987 B1 KR101488987 B1 KR 101488987B1 KR 20070123289 A KR20070123289 A KR 20070123289A KR 20070123289 A KR20070123289 A KR 20070123289A KR 101488987 B1 KR101488987 B1 KR 101488987B1
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South Korea
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polishing
substrate
hard
oil
average
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Korean (ko)
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KR20080050338A (ko
Inventor
겐지 아오끼
도오루 야마자끼
다께히로 와따나베
나오유끼 하마다
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니혼 미크로 코팅 가부시끼 가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1472—Non-aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR20070123289A 2006-12-01 2007-11-30 경질 결정 기판 연마 방법 및 유성 연마 슬러리 Active KR101488987B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2006-00326334 2006-12-01
JP2006326334A JP5599547B2 (ja) 2006-12-01 2006-12-01 硬質結晶基板研磨方法及び油性研磨スラリー

Publications (2)

Publication Number Publication Date
KR20080050338A KR20080050338A (ko) 2008-06-05
KR101488987B1 true KR101488987B1 (ko) 2015-02-02

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Country Status (4)

Country Link
US (2) US7828628B2 (https=)
JP (1) JP5599547B2 (https=)
KR (1) KR101488987B1 (https=)
TW (1) TWI409323B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112480825A (zh) * 2020-12-10 2021-03-12 河南联合精密材料股份有限公司 碳化硅晶片粗抛用金刚石抛光液及制备方法

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100013716A (ko) * 2008-07-31 2010-02-10 삼성전자주식회사 잉크젯 프린트헤드의 제조방법
MY158571A (en) 2009-03-13 2016-10-14 Saint Gobain Ceramics Chemical mechanical planarization using nanodiamond
JP5452175B2 (ja) * 2009-11-04 2014-03-26 昭和電工株式会社 ラップ加工方法
JP2011108321A (ja) * 2009-11-18 2011-06-02 Hitachi Ltd 磁気ヘッドスライダの製造方法
JP5620300B2 (ja) * 2011-02-16 2014-11-05 Ｍｉｐｏｘ株式会社 結晶材料からなる被研磨物を研磨するための研磨盤とその製造方法、及び研磨方法
JP5734435B2 (ja) * 2011-08-10 2015-06-17 三菱電機株式会社 半導体装置の製造方法
CN103959437B (zh) 2011-09-30 2017-08-01 圣戈班晶体及检测公司 具有特定结晶特征的iii‑v族衬底材料及其制备方法
WO2013049775A2 (en) 2011-09-30 2013-04-04 Saint-Gobain Ceramics & Plastics, Inc. Scintillation detection device with pressure sensitive adhesive
US9522454B2 (en) * 2012-12-17 2016-12-20 Seagate Technology Llc Method of patterning a lapping plate, and patterned lapping plates
CN103013345B (zh) * 2012-12-21 2015-02-18 清华大学 油性金刚石研磨液及其制备方法
TWI529964B (zh) 2012-12-31 2016-04-11 聖戈班晶體探測器公司 具有薄緩衝層的iii-v族基材及其製備方法
JP6694745B2 (ja) * 2016-03-31 2020-05-20 株式会社フジミインコーポレーテッド 研磨用組成物
CN109715751A (zh) 2016-09-23 2019-05-03 圣戈本陶瓷及塑料股份有限公司 化学机械平坦化浆料及其形成方法
JP7135531B2 (ja) * 2018-07-20 2022-09-13 株式会社デンソー 炭化珪素半導体装置の製造方法
EP3918023B1 (en) 2019-01-31 2025-12-31 Pureon Inc. Multimodal diamond-based abrasive suspension or assembly for polishing hard substrates
CN114341861A (zh) * 2019-08-29 2022-04-12 株式会社半导体能源研究所 特性预测系统
CN112980391A (zh) * 2021-03-02 2021-06-18 河北思瑞恩新材料科技有限公司 一种用于碳化硅晶片加工的粗磨液及其制备方法
TWI813999B (zh) * 2021-05-14 2023-09-01 日揚科技股份有限公司 硬質材料加工裝置及其系統
US11365854B1 (en) 2021-09-24 2022-06-21 E. Mishan & Sons, Inc. Solar light with positionable panels
EP4424870A4 (en) * 2021-10-28 2025-10-08 Tokai Carbon Kk POLYCRYSTALLINE SIC MOLDED BODY AND ITS MANUFACTURING METHOD
CN114231251A (zh) * 2021-12-27 2022-03-25 河南联合精密材料股份有限公司 一种碳化硅晶片粗磨用金刚石研磨液及其制备方法
WO2024263357A1 (en) * 2023-06-21 2024-12-26 Corning Incorporated Coated articles, methods of polishing, and methods of making the same
CN117261002A (zh) * 2023-08-28 2023-12-22 深圳先进技术研究院 一种金属卤化物钙钛矿单晶的机械加工处理方法
JP7499934B1 (ja) 2023-11-13 2024-06-14 Ｊｘ金属株式会社 リン化インジウム基板及び半導体エピタキシャルウエハ
JP7499933B1 (ja) 2023-11-13 2024-06-14 Ｊｘ金属株式会社 リン化インジウム基板及び半導体エピタキシャルウエハ
JP7499932B1 (ja) 2023-11-13 2024-06-14 Ｊｘ金属株式会社 リン化インジウム基板及び半導体エピタキシャルウエハ

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000144113A (ja) 1998-11-17 2000-05-26 Tokyo Magnetic Printing Co Ltd 遊離砥粒スラリー組成物
JP2005186246A (ja) * 2003-12-26 2005-07-14 Tokyo Magnetic Printing Co Ltd 複合材の研磨方法および仕上げ研磨に用いるラッピングオイル組成物

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1986936A (en) * 1930-03-07 1935-01-08 Du Pont Polishing composition
US4793953A (en) * 1987-10-16 1988-12-27 Galic/Maus Ventures Mold for optical thermoplastic high-pressure molding
US5207759A (en) * 1991-09-20 1993-05-04 Hmt Technology Corporation Texturing slurry and method
JPH05156239A (ja) * 1991-12-06 1993-06-22 Tokyo Daiyamondo Kogu Seisakusho:Kk 超精密加工用スラリー及び超精密加工用ペースト
US5603739A (en) * 1995-06-09 1997-02-18 Diamond Scientific, Inc. Abrasive suspension system
US5942015A (en) * 1997-09-16 1999-08-24 3M Innovative Properties Company Abrasive slurries and abrasive articles comprising multiple abrasive particle grades
US6099387A (en) * 1998-06-15 2000-08-08 Advanced Micro Devices, Inc. CMP of a circlet wafer using disc-like brake polish pads
TW383249B (en) * 1998-09-01 2000-03-01 Sumitomo Spec Metals Cutting method for rare earth alloy by annular saw and manufacturing for rare earth alloy board
MY126994A (en) * 1999-12-14 2006-11-30 Hitachi Metals Ltd Method and apparatus for cutting a rare earth alloy
US6802877B2 (en) * 2001-04-20 2004-10-12 Thomas J. Drury Polyvinyl acetal composition roller brush with abrasive outer surface
US7235296B2 (en) * 2002-03-05 2007-06-26 3M Innovative Properties Co. Formulations for coated diamond abrasive slurries
JP2004087647A (ja) * 2002-08-26 2004-03-18 Nihon Micro Coating Co Ltd 研磨パッド及び方法
JP3940693B2 (ja) * 2003-02-24 2007-07-04 日本ミクロコーティング株式会社 磁気ハードディスク基板及びその製造方法
JP4155872B2 (ja) * 2003-05-26 2008-09-24 一正 大西 ラップ盤の製造方法
JP2005097375A (ja) * 2003-09-24 2005-04-14 Okamoto Machine Tool Works Ltd ナノダイヤモンド非水分散液およびその調製方法
JP2005131711A (ja) * 2003-10-28 2005-05-26 Nihon Micro Coating Co Ltd ダイヤモンド研磨粒子及びその製造方法
JP4255824B2 (ja) * 2003-12-25 2009-04-15 株式会社トッパンＴｄｋレーベル ラッピングオイル組成物及び複合材の仕上げ研磨方法
JP2005244198A (ja) * 2004-01-26 2005-09-08 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
CN100458925C (zh) * 2004-04-14 2009-02-04 日本微涂料株式会社 磁硬盘用玻璃基片的纹理加工方法及浆料
JP2006048870A (ja) * 2004-08-06 2006-02-16 Nihon Micro Coating Co Ltd 垂直磁気記録ディスクの製造方法
JP2006268984A (ja) * 2005-03-25 2006-10-05 Nihon Micro Coating Co Ltd 垂直磁気記録ディスク及びその製造方法
US8251777B2 (en) * 2005-06-30 2012-08-28 Cabot Microelectronics Corporation Polishing slurry for aluminum and aluminum alloys
US8062096B2 (en) * 2005-06-30 2011-11-22 Cabot Microelectronics Corporation Use of CMP for aluminum mirror and solar cell fabrication
JP4936424B2 (ja) * 2005-10-31 2012-05-23 日本ミクロコーティング株式会社 研磨材及びその製造方法
JP2007149203A (ja) * 2005-11-28 2007-06-14 Nihon Micro Coating Co Ltd テクスチャ加工方法及び加工スラリー

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000144113A (ja) 1998-11-17 2000-05-26 Tokyo Magnetic Printing Co Ltd 遊離砥粒スラリー組成物
JP2005186246A (ja) * 2003-12-26 2005-07-14 Tokyo Magnetic Printing Co Ltd 複合材の研磨方法および仕上げ研磨に用いるラッピングオイル組成物

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112480825A (zh) * 2020-12-10 2021-03-12 河南联合精密材料股份有限公司 碳化硅晶片粗抛用金刚石抛光液及制备方法

Also Published As

Publication number Publication date
US20110005143A1 (en) 2011-01-13
KR20080050338A (ko) 2008-06-05
TW200835781A (en) 2008-09-01
JP5599547B2 (ja) 2014-10-01
JP2008138097A (ja) 2008-06-19
US7828628B2 (en) 2010-11-09
US20080139089A1 (en) 2008-06-12
TWI409323B (zh) 2013-09-21

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