KR101488538B1 - 다중 주파수 ｒｆ 전력을 이용한 하이브리드 ｒｆ 용량 및 유도 결합형 플라즈마 소스 및 그 사용 방법 - Google Patents

다중 주파수 ｒｆ 전력을 이용한 하이브리드 ｒｆ 용량 및 유도 결합형 플라즈마 소스 및 그 사용 방법 Download PDF

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KR101488538B1
KR101488538B1 KR20097003138A KR20097003138A KR101488538B1 KR 101488538 B1 KR101488538 B1 KR 101488538B1 KR 20097003138 A KR20097003138 A KR 20097003138A KR 20097003138 A KR20097003138 A KR 20097003138A KR 101488538 B1 KR101488538 B1 KR 101488538B1
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plasma
coil
power source
coil units
support ring
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KR20090031624A (ko
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알렉세이 마라크타노브
라진더 딘드사
에릭 허드슨
안드레아스 피셔
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램 리써치 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/03—Mounting, supporting, spacing or insulating electrodes

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
KR20097003138A 2006-07-18 2007-07-13 다중 주파수 ｒｆ 전력을 이용한 하이브리드 ｒｆ 용량 및 유도 결합형 플라즈마 소스 및 그 사용 방법 Active KR101488538B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/487,999 US7837826B2 (en) 2006-07-18 2006-07-18 Hybrid RF capacitively and inductively coupled plasma source using multifrequency RF powers and methods of use thereof
US11/487,999 2006-07-18
PCT/US2007/015928 WO2008010943A2 (en) 2006-07-18 2007-07-13 Hybrid rf capacitively and inductively coupled plasma source using multifrequency rf powers and methods of use thereof

Publications (2)

Publication Number Publication Date
KR20090031624A KR20090031624A (ko) 2009-03-26
KR101488538B1 true KR101488538B1 (ko) 2015-02-02

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KR20097003138A Active KR101488538B1 (ko) 2006-07-18 2007-07-13 다중 주파수 ｒｆ 전력을 이용한 하이브리드 ｒｆ 용량 및 유도 결합형 플라즈마 소스 및 그 사용 방법

Country Status (7)

Country Link
US (2) US7837826B2 (enExample)
JP (1) JP4995907B2 (enExample)
KR (1) KR101488538B1 (enExample)
CN (1) CN101506950B (enExample)
MY (1) MY149067A (enExample)
TW (1) TWI435664B (enExample)
WO (1) WO2008010943A2 (enExample)

Cited By (1)

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US11114287B2 (en) 2018-06-14 2021-09-07 Mks Instruments, Inc. Radical output monitor for a remote plasma source and method of use

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Also Published As

Publication number Publication date
CN101506950B (zh) 2011-03-30
US8222157B2 (en) 2012-07-17
US7837826B2 (en) 2010-11-23
KR20090031624A (ko) 2009-03-26
JP4995907B2 (ja) 2012-08-08
CN101506950A (zh) 2009-08-12
MY149067A (en) 2013-07-15
TW200824506A (en) 2008-06-01
WO2008010943A2 (en) 2008-01-24
TWI435664B (zh) 2014-04-21
US20080020574A1 (en) 2008-01-24
US20110059615A1 (en) 2011-03-10
WO2008010943A3 (en) 2009-04-09
JP2009544168A (ja) 2009-12-10

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