CN109216144B - 一种具有低频射频功率分布调节功能的等离子反应器 - Google Patents
一种具有低频射频功率分布调节功能的等离子反应器 Download PDFInfo
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- CN109216144B CN109216144B CN201710533117.XA CN201710533117A CN109216144B CN 109216144 B CN109216144 B CN 109216144B CN 201710533117 A CN201710533117 A CN 201710533117A CN 109216144 B CN109216144 B CN 109216144B
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- 230000008878 coupling Effects 0.000 claims abstract description 54
- 238000010168 coupling process Methods 0.000 claims abstract description 54
- 238000005859 coupling reaction Methods 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 238000006243 chemical reaction Methods 0.000 claims abstract description 36
- 239000011810 insulating material Substances 0.000 claims abstract description 21
- 238000005260 corrosion Methods 0.000 claims abstract description 10
- 230000007797 corrosion Effects 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 10
- 230000000694 effects Effects 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 16
- 230000005684 electric field Effects 0.000 claims description 13
- 239000007789 gas Substances 0.000 claims description 8
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 230000008859 change Effects 0.000 claims description 5
- 239000012495 reaction gas Substances 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 230000003628 erosive effect Effects 0.000 claims description 2
- 238000002955 isolation Methods 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims description 2
- 230000004888 barrier function Effects 0.000 claims 2
- 238000012544 monitoring process Methods 0.000 claims 2
- 239000003990 capacitor Substances 0.000 abstract description 34
- 230000008569 process Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 239000007788 liquid Substances 0.000 description 6
- 238000005192 partition Methods 0.000 description 6
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000036470 plasma concentration Effects 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical group [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 238000010618 wire wrap Methods 0.000 description 1
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
-
- C—CHEMISTRY; METALLURGY
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
-
- H—ELECTRICITY
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
-
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- H01J37/32183—Matching circuits
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- H01J37/32—Gas-filled discharge tubes
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- H01J37/32366—Localised processing
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-
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32577—Electrical connecting means
-
- H—ELECTRICITY
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32963—End-point detection
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- H01L21/6833—Details of electrostatic chucks
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C13/00—Means for manipulating or holding work, e.g. for separate articles
- B05C13/02—Means for manipulating or holding work, e.g. for separate articles for particular articles
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- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2007—Holding mechanisms
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- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3341—Reactive etching
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- H01J37/32082—Radio frequency generated discharge
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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Abstract
本发明提供一种具有低频射频功率分布调节功能的等离子反应器,包括:一反应腔,反应腔内具有一导电基座,导电基座通过一个第一匹配器连接到一个低频射频电源,导电基座上包括一个静电夹盘,静电夹盘上表面用于固定待处理基片,导电基座外侧壁涂覆有至少一层耐等离子腐蚀的绝缘材料层,一个由绝缘材料制成的耦合环围绕在基座外周围,一个聚焦环设置在所述耦合环上方,所述聚焦环围绕所述静电夹盘并且在等离子处理过程中暴露于等离子体,还包括一个环形电极位于所述耦合环上方和聚焦环的下方,一导线第一端电连接到所述基座,第二端连接到所述环形电极,一可变电容串联在所述导线上。
Description
技术领域
本发明涉及半导体加工技术领域,具体涉及一种具有低频射频功率分布调节功能的等离子反应器。
背景技术
半导体芯片被日益广泛的应用到各种电子设备中,其中半导体芯片加工过程需要用到大量等离子处理器,这些处理器会对待处理的基片进行等离子刻蚀、化学气相沉积等工艺。图1a是一个典型的用于等离子刻蚀的处理器,该处理器包括反应腔10,反应腔顶部包括一个绝缘材料窗,绝缘材料窗上方设置有电感线圈7,电感线圈7通过一个射频匹配器8连接到一个高频(13MHz及以上)射频电源6,还包括至少一个反应气体源11经过阀门95和气体喷头90将反应气体送入反应腔中,以形成等离子体对基片进行刻蚀。反应腔10内部下方包括一个基座20,基座通过一个偏置射频功率匹配器连接到一个偏置射频源4,其中偏置射频源输出的低频射频频率一般低于2MHz。反应腔10底部还包括一个排气装置排出气体,维持反应腔内低压,一个阀门3通过调节阀门开度调节内部气压大小。基座20通常由铝合金进行表面阳极氧化制成,或者在铝合金表面涂覆一层绝缘的耐腐蚀材料层,以避免被反应腔内的刻蚀气体腐蚀,造成颗粒污染等一系列问题。基座上表面设置有一个静电夹盘21用于固定基片22到静电夹盘上表面。基座下部外围还包括一个突出的台阶部,台阶部上设置有耦合环25,通过对耦合环125的材料和形状尺寸的选择,改变基片边缘区域耦合的射频能量分布。耦合环25上方设置有一个聚焦环23,其中聚焦环23内壁围绕并紧贴基片22,而且聚焦环23的上表面暴露到上方的等离子体。在等离子处理过程中偏置射频功率被用来控制形成在基片上表面的和聚焦环上表面的鞘层厚度,鞘层的厚度决定了等离子体中的离子入射到基片的能量和方向。如果基片边缘区域和聚焦环的鞘层不连续分布的话会造成基片边缘区域刻蚀速率和刻蚀方向(edge tilting)与基片中心区域的差别,降低基片加工均匀性,影响最终芯片的良率。
由于聚焦环23是长期保留在充满刻蚀气体的等离子体中的,所以在进行一定长度的等离子处理后聚焦环23表面材料必然会被腐蚀,因此聚焦环上表面的高度会随之下降,下降的高度会严重影响基片边缘区域鞘层的分布和形态,为了抵消这种长期工作中产生的等离子处理效果漂移,需要设计对应的补偿机构或方法。部分现有技术中将耦合环25或者聚焦环内部设为环形空腔,将绝缘液体通入这个空腔中,通过调节绝缘液体的量或者成分来改变偏置射频功率分布到聚焦环上方的功率大小,从而补偿聚焦环高度变化代理的处理效果漂移。这种方法需要在反应腔内设置绝缘液供应管路,零部件内部还需要保持气密的情况下设置空腔,介电液位的高度也很难测量,所以在工程应用中使得部件结构更复杂成本更高,而且很难对电场分布进行精确的微量调整。还有部分现有技术在反应腔内设置机械驱动装置,驱动耦合环25或者聚焦环23可以微量上下运动,以改变基片边缘区域的电场分布,但是这种方法由于存在运动部件会带来颗粒污染的问题,而且运动的耦合环25和聚焦环23的精确定位也是很大的问题,1mm以下的位置偏移都会导致基片上处理效果的不均匀分布。上述两种现有技术中的调节方法不仅存在各自的问题,而且还存在一个最严重的缺陷,上述调节方法对耦合到聚焦环23的低频射频功率的影响很小,也就是必须进行大幅度的调节才能有效改善功率分配。如图1b所示,输入的低频射频功率P0经过基座20与基片22之间的等效电容C11耦合P1’功率到基片,同时经过基座20到耦合环25和聚焦环23的等效电容C12耦合P2’到聚焦环25。其中C12的值非常小,而且很难调节,所以P2’会远小于P1’且功率比例很难调。为了增加C12可以选择铝、碳化硅等高导电性的材料制造耦合环25,但是这种选择一种材料来补偿的方法只能补偿一段时间,无法动态的补偿由于聚焦环损耗带来的处理效果漂移。
所以业内需要开发一种新的调节装置,来微量精密调节低频射频功率在基片中心和基片边缘区域的射频功率分布,从而改善基片处理工艺的均匀性。最佳的,该调节装置需要结构简单、成本低廉,能够应用于各种等离子处理装置。
发明内容
本发明提供了一种等离子反应器,能够简单有效的调整基片边缘区域射频功率,补偿聚焦环长期使用中的损耗带来的基片边缘倾斜刻蚀(edge tilting)。本发明公开一种具有低频射频功率分布调节装置的等离子反应器,包括:
一反应腔,反应腔内具有一导电基座,导电基座通过一个第一匹配器连接到一个低频射频电源,导电基座上包括一个静电夹盘,静电夹盘上表面用于固定待处理基片,导电基座外侧壁包括至少一层耐等离子腐蚀的绝缘材料层,一个由绝缘材料制成的耦合环围绕在基座外周围,一个聚焦环设置在所述耦合环上方,所述聚焦环围绕所述静电夹盘并且在等离子处理过程中暴露于等离子体,还包括一个环形电极位于所述耦合环上方和聚焦环的下方,一导线第一端电连接到所述基座,第二端连接到所述环形电极,一可变电容串联在所述导线上。
其中所述低频射频电源输出的射频信号的频率小于13MHz,较佳地低频射频源输出的射频信号的频率小于2Mhz。
所述反应器还包括一个进气装置和一个高频射频电源,高频射频电源输出高频射频功率到所述反应腔,使得通入反应腔的反应气体产生等离子体,其中高频射频电源输出的射频信号的频率大于13MHz。
本发明可以应用于电容耦合等离子反应腔(CCP),CCP反应腔顶部包括一个上电极,反应气体通过所述上电极被送入反应腔,所述高频射频电源连接到所述基座或者上电极。本发明也可以应用于ICP等离子反应腔,ICP反应腔顶部包括一个绝缘材料窗,一个电感线圈位于所述绝缘材料窗上方,所述高频射频电源通过一个第二匹配器向所述电感输送射频功率。
本发明的可变电容设置在所述基座下方,较佳地,所述反应腔底部包括一个气密隔板,可变电容位于所述气密隔板下方的大气环境中。所述反应腔壁由接地金属组成,所述接地金属包围形成电场屏蔽空间,所述可变电容位于所述电场屏蔽空间内。
其中所述导电基座外侧壁的耐等离子腐蚀的绝缘材料层由氧化铝或者氧化钇制成,耦合环由氧化硅或氧化铝制成。
本发明中等离子反应器的导电连接部也可以包括多根分支导线,每根分支导线在聚焦环下方均匀分布,且多根分支导线的一端连接到所述环形电极另一端连接到共用的可变电容。或者多根分支导线在聚焦环下方均匀分布,且多根分支导线的第一端连接到环形电极,另一端连接到基座,每根分支导线上串联有各自的可变电容。进一步的,所述环形电极由多个弧形导电片组成,每个弧形导电片之间包括间隙或者隔离部件,使得每个弧形导电片互相电隔离,所述多根导线第一端分别连接到所述多个弧形导电片。从而实现对整个基片边缘环形区域的鞘层厚度进行分区独立调整。
附图说明
图1a为现有技术等离子处理器示意图;
图1b为现有技术等离子处理器中低频射频功率分布示意图;
图2a是本发明等离子处理器示意图;
图2b是本发明等离子处理器中低频射频功率分布示意图;
图3是本发明等离子处理器另一实施例的示意图;
图4是本发明等离子处理器第三实施例的示意图;
图5是本发明等离子处理器第四实施例的示意图。
具体实施方式
以下结合附图2,进一步说明本发明的具体实施例。
经过发明人研究发现,当高频的射频功率被输入基座120时射频功率能够轻易的耦合到聚焦环处,因为对于高频信号来说基座120表面的很薄(几十微米)绝缘耐腐蚀层和耦合环125阻抗很小。但是对于低频射频信号来说,较低的频率导致同样的绝缘层和耦合环125形成很大的阻抗,这一阻抗导致只有很少的低频射频能量能耦合到聚焦环123,即使采用各种手段调节耦合环与聚焦环的介电常数、位置,最终可调的范围仍然有限。因为基座120侧壁的绝缘耐腐蚀层必不可少,而且耦合环通常选择绝缘材料,如氧化铝或者氧化硅材料制成,所以在现有硬件结构下无法将低频射频功率可调的分配到基片边缘的聚焦环123上。其中耦合环也可以选择高导电材料制成,但是这种耦合环只能在短时间内取得较好的刻蚀效果,时间一长仍然无法补偿聚焦环损耗带来的处理效果漂移。而且高导电性的耦合环除了影响低频射频功率的分布也会同时影响高频射频功率的分布,也就影响了等离子浓度的分布,所以为了聚焦环上方鞘层厚度的调整反而造成等离子浓度分布不均匀,也无法改善整体的等离子处理效果。聚焦环123通常是由石英、氧化铝等绝缘材料或者碳化硅、硅等半导体材料制成,以避免等离子处理过程中产生的颗粒污染基片,同时提供足够的导电性。
基于这一发现,本发明提出了如图2a所示的一种新的等离子处理腔,其基本结构与图1a所示的现有技术相同,主要区别在于将低频射频功率利用一导电连接部,其中导电连接部典型是一根导线,所述导线直接引导到耦合环上方、聚焦环的下方,同时导线上还串联有一个可变电容124。如图2a所示,一个环形电极127设置在耦合环125上方,聚焦环设置在环形电极上,导线的第一端与环形电极127直接电连接,另一端与基座120直接电连接,导线中间还串联有一个可变电容124,通过调节可变电容124的电容值来调节输送到聚焦环的低频射频功率。环形电极127可以是任何导电材料制成的,如铝、石墨等,只要能提供良好导电性的材料均可。本发明的可变电容可以设置在导电基座120下方的真空空间中,最佳的可以将可变电容124设置到反应腔内气密隔板下方的大气环境中,只要使导线两端穿过气密隔板就可以了,设置在大气环境的可变电容更容易散热也更容易维护。反应腔壁100由接地金属组成,接地金属包围形成电场屏蔽空间,只要本发明可变电容124在反应腔的电场屏蔽空间内,即使是在气密隔板下方的大气环境中仍然可以避免可变电容124向外部环境辐射低频电场。相对必须在真空反应腔内设置液体进出管道和机械驱动装置的现有技术而言。本发明的不仅可变电容体积小且成本低,而且安装结构简单。
如图2b所示为本发明的等效电路图和射频功率分布图,本发明中耦合到中心基片的等效电容C21仍然很大,所以主要功率能够耦合到基片,基座120经过侧壁耐腐蚀绝缘层和耦合环125到聚焦环123的等效电容C22亦然很小,无法传输较大功率的射频功率。可变电容124不是通过传统的耦合的方式传递射频功率,而是通过直接电连接的方式将基座120中的射频功率直接引导到了目标聚焦环123的下表面处,所以绕过了严重影响低频射频功率耦合的阻抗。其中可变电容124可以根据需要自行选择取值范围和调节范围,所以本发明的可变电容124通过简单的调节容值就可以有效的调节输送到聚焦环123的低频射频功率。当反应腔处于初始状态时可变电容处于初始值,进行长时间的等离子处理后,检测到基片边缘区域的处理效果与中心不同,控制器可以根据设定参数,实时自动改变可变电容的数值,使得更多低频射频功率被输送到基片边缘的聚焦环,进而抬高聚焦环处的鞘层,使得基片边缘到聚焦环上方具有相同高度的鞘层,改善刻蚀均一性。其中处理效果中最典型的是基片边缘区域刻蚀孔的倾斜度(edge tilting),一旦聚焦环上表面没损耗导致高度下降,相应的会使得边缘区域的鞘层降低,因此基片边缘区域的刻蚀孔会出现倾斜向内方向的倾斜角度。继续检测基片处理的效果,直到处理效果的均一性再次偏移超出预设的阀值,根据检测到的数据再次调整可变电容的容值。这样本发明就可以在长期不更换聚焦环的情况下,只需要改变可变电容的参数设定而不需要真空环境中的液体管道或机械驱动装置就能长期保持等离子效果的稳定。
本发明除了可以应用于图1-2所示的电感耦合等离子处理器外(ICP),也可以应用于电容耦合等离子处理器(CCP),电容耦合处理器的反应腔顶部不是绝缘材料窗而是一个导电的上电极,上电极呈扁平的喷淋头状,反应气体通过上电极被送入下方的反应区域。高频射频射频功率(13Mhz以上,如27MHz、60MHz等)可以被输送到作为下电极的基座120,此时上电极电接地,也可以将上述高频射频功率输送到上电极。在电容耦合等离子反应器中耦合环和聚焦环的介电参数会同时影响高频和低频射频功率的分布,通过本发明设置的导电路径可以使得高频射频功率主要通过耦合的方式将射频功率输送到聚焦环123,低频功率一部分通过耦合环125耦合到聚焦环123,另一部分可调的功率通过直接导通的方式将低频射频功率输送到聚焦环123,所以本发明还具有分别单独调控高频和低频射频功率的作用,能够更精确的调整基片上表面中心到边缘的等离子浓度分布(高频功率主导)和鞘层分布(低频功率主导)。
本发明能够在现有技术中原有耦合环耦合低频射频能量之外,补充设置一个,结构简单,功率可调的低频射频能量供应电路。下电极通过耦合环耦合到聚焦环的等效电容C22和本发明添加的可变电容124共同决定分配到聚焦环的低频射频功率大小。其中最佳的可以选择绝缘材料制成耦合环,这样C22较小,加上可变电容124可以使得电容调节范围更大。如果耦合环125采用高导电材料制成也能实现本发明效果,只是C22加124的等效电容的调节范围略微不同。
介电材料层对低频射频信号的阻抗很大,即使的很薄的耐等离子腐蚀涂层(Al2O3、Y2O3等组成)也会明显影响低频射频功率耦合到基片边缘聚焦环的功率。当基座120侧壁的绝缘层和耦合环的材料厚度、成分不同时,对应的射频频率也会不同。特别是厚度更厚时,或者耦合环介电系数更高时,相应的会使得更高频率值的低频功率无法有效输送到聚焦环。所以本发明中的低频射频信号通常是低于2Mhz的,特别是低于1Mhz如400KHz时效果最明显。但是只要应用场合需要,高于2Mhz的射频信号如13MHz也可以采用本发明的绕接导线的结构使得低频射频功率被有效且可调的输送到聚焦环。
如图3所示,本发明还提供另一个实施例,基本结构与图2所示的第一个实施例相同,主要的区别在于,可变电容124除了通过导线直接连接到下电极120以外,也可以是连接到一个位于下电极120的台阶部上表面之上和耦合环125之下的由导体材料制成的导电部129,下电极的低频射频功率通过耦合越过台阶部上表面的绝缘材料层输入到导电部129,再通过导线和可变电容124将低频功率输送到环形电极127。其中导电部可以是环形也可以是多个分离的导体,环绕下电极侧壁。在等离子处理装置中输入到下电极的电场主要是向上耦合到反应腔顶部,所以现有技术中从下电极横向耦合到聚焦环123的等效电容C12很小,本发明中导电部129是水平方向延伸的导体,从下电极台阶部向上的电场线能够大量穿过台阶部顶表面的绝缘耐腐蚀材料层到达导电部,所以等效电容远大于现有技术中的C12。所以本发明第二实施例通过在台阶部顶表面设置电场耦合的导电部129,可以将低频电场引导到位于耦合环125上方的环形电极127,从而能够调节基片边缘区域的低频射频能量大小。
本发明的导线下端可以直接电连接导电基座120,也可以是耦合到导电基座的上述导电部129。另一方面,导线的上端除了连接到位于耦合环125和聚焦环123之间的环形电极,环形电极也可以埋设入聚焦环123中,或者如图5所示实施例中,环形电极127’埋设入绝缘材料制成的耦合环125的上半部中,这样虽然从下电极120耦合到聚焦环123的等效电容小于图2所示可变电容124的值,但也远大于图1所示的现有技术中的C12,所以也能实现本发明目的。如图4所示的实施例,当聚焦环123’采用导体或者半导体材料(硅、碳化硅、铝等)制成时,聚焦环123’本身就可以作为本发明的环形电极,所以此时导线的上端可以直接连接到聚焦环123’。
此外本发明所述跨接的导电连接部也可以是由多个多根分支导线组成的,最佳的在基座外围均匀对称分布的多根分支导线,使得多根分支导线中每个分支导线与相邻分支导线具有相同的距离并且连接到环形电极不同区域。下面以3根分支导线为例说明本发明的其它实施例,每根分支导线一端连接到环形电极,另一端共同连接到一个可变电容,再通过可变电容上连接的导线连接到基座。或者每根分支导线均两端均连接到导电基座和环形电极,三根分支导线上串联三个独立可调的可变电容,通过调整这三个可变电容使得低频功率能够从三根分支导线上均匀分配到环形电极上。进一步的可以使环形电极分为三段弧形导电片,共同围绕形成环形电极,每个弧形导电片之间存在间隙或隔离部件实现互相电隔离,通过独立调整上述三个可变电容可以分区调整聚焦环上不同区域的鞘层厚度,解决基片边缘环装区域中部分方位的鞘层不均的问题。
本发明中所述的可变电容是最佳实施例,但是其它能够调节低频射频功率阻抗的任何可变阻抗装置,如包括可变电感、电容组成的混合电路或者其它元器件组合而成的电路均可以实现阻抗调节的功能,上述替换属于公知常识,所以不再一一例举。
尽管本发明的内容已经通过上述优选实施例作了详细介绍,但应当认识到上述的描述不应被认为是对本发明的限制。在本领域技术人员阅读了上述内容后,对于本发明的多种修改和替代都将是显而易见的。因此,本发明的保护范围应由所附的权利要求来限定。
Claims (20)
1.一种具有低频射频功率分布调节功能的等离子反应器,包括:
一反应腔,反应腔内具有一导电基座,导电基座通过一个第一匹配器连接到一个低频射频电源,导电基座上包括一个静电夹盘,静电夹盘上表面用于固定待处理基片,一个耦合环围绕在导电基座外周围,一个聚焦环设置在所述耦合环上方,所述聚焦环围绕所述静电夹盘并且在等离子处理过程中暴露于等离子体,
还包括一个环形电极位于所述耦合环内部或其上方,一导电连接部,所述导电连接部包括至少一根导线,所述导线的第一端电连接到所述导电基座或者电连接到与所述导电基座电耦合的一导电部,所述导线的第二端电连接到所述环形电极,一可变阻抗装置串联在所述导线上。
2.如权利要求1所述的等离子反应器,其特征在于,所述导电基座外围下方包括一台阶部,所述导电部位于所述导电基座的台阶部上方,所述耦合环由绝缘材料制成且设置在所述导电部上方,所述导电基座外侧壁包括至少一层耐等离子腐蚀的绝缘材料层。
3.如权利要求1所述的等离子反应器,其特征在于,所述环形电极位于聚焦环下方。
4.如权利要求1所述的等离子反应器,其特征在于,所述环形电极位于所述耦合环上方,所述聚焦环由绝缘材料制成,所述环形电极埋设于聚焦环内。
5.如权利要求1所述的等离子反应器,其特征在于,所述环形电极位于所述耦合环内部,所述环形电极埋设于所述耦合环内上半部。
6.如权利要求1所述的等离子反应器,其特征在于,所述环形电极位于所述耦合环上方,所述聚焦环由导体或者半导体材料制成,所述聚焦环同时作为所述环形电极。
7.如权利要求1至6任一项所述的等离子反应器,其特征在于,所述低频射频电源输出的射频信号的频率小于13MHz。
8.如权利要求1所述的等离子反应器,其特征在于,所述低频射频电源输出的射频信号的频率小于2Mhz。
9.如权利要求1至6任一项所述的等离子反应器,其特征在于,所述反应器还包括一个进气装置和一个高频射频电源,高频射频电源输出高频射频功率到所述反应腔,使得通入反应腔的反应气体产生等离子体,其中高频射频电源输出的射频信号的频率大于13MHz。
10.如权利要求9所述的等离子反应器,其特征在于,所述反应腔顶部包括一个绝缘材料窗,一个电感线圈位于所述绝缘材料窗上方,所述高频射频电源通过一个第二匹配器向所述电感线圈输送射频功率。
11.如权利要求9所述的等离子反应器,其特征在于,所述反应腔顶部包括一个上电极,反应气体通过所述上电极被送入反应腔,所述高频射频电源连接到所述基座或者上电极。
12.如权利要求1至6任一项所述的等离子反应器,其特征在于,所示可变阻抗装置包括至少一可变电容或可变电感。
13.如权利要求12所述的等离子反应器,其特征在于,所述可变阻抗装置在所述基座下方,所述反应腔底部包括一个气密隔板,可变阻抗装置位于所述气密隔板下方的大气环境中。
14.如权利要求13所述的等离子反应器,其特征在于,所述反应腔壁由接地金属组成,所述接地金属包围形成电场屏蔽空间,所述可变阻抗装置位于所述电场屏蔽空间内。
15.如权利要求2所述的等离子反应器,其特征在于,所述耐等离子腐蚀的绝缘材料层由氧化铝或者氧化钇制成。
16.如权利要求1至6任一项所述的等离子反应器,其特征在于,所述耦合环由氧化硅或氧化铝制成。
17.如权利要求1至5任一项所述的等离子反应器,其特征在于,所述等离子反应器的所述导电连接部包括多根分支导线,每一根分支导线均包括一端连接到所述环形电极,且所述多根分支导线连接到环形电极的不同区域,每一根分支导线还包括另一端连接到所述可变阻抗装置,通过所述可变阻抗装置连接到导电基座或者导电部。
18.如权利要求1至5任一项所述的等离子反应器,其特征在于,所述等离子反应器包括多根分支导线,所述多根分支导线在聚焦环下方均匀分布,且每根分支导线的第一端连接到所述环形电极,另一端连接到导电基座或者导电部,每根分支导线上串联有各自的可变阻抗装置。
19.如权利要求18所述的等离子反应器,其特征在于,所述环形电极由多个弧形导电片组成,每个弧形导电片之间包括间隙或者隔离部件,使得每个弧形导电片互相电隔离,所述多根分支导线的第一端分别连接到所述多个弧形导电片。
20.一种应用于权利要求1-6任一项所述的等离子反应器的低频射频功率分布调节方法,包括步骤:
基片刻蚀效果监测步骤:检测基片边缘区域的刻蚀效果,如果基片边缘刻蚀孔倾斜角度在预设角度范围内,则继续执行基片刻蚀效果检测步骤,如果基片边缘刻蚀孔倾斜超过预设角度,则进入可变阻抗装置调整步骤;
可变阻抗调整步骤:调整所述可变阻抗装置的阻抗参数,使得被输送到基片边缘聚焦环的低频射频功率改变,并再次进入基片刻蚀效果监测步骤。
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