CN101506950B - 使用多频率rf功率的混合rf电容和电感耦合等离子源及其使用方法 - Google Patents

使用多频率rf功率的混合rf电容和电感耦合等离子源及其使用方法 Download PDF

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Publication number
CN101506950B
CN101506950B CN2007800273793A CN200780027379A CN101506950B CN 101506950 B CN101506950 B CN 101506950B CN 2007800273793 A CN2007800273793 A CN 2007800273793A CN 200780027379 A CN200780027379 A CN 200780027379A CN 101506950 B CN101506950 B CN 101506950B
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coil
power supply
plasma
plasma processing
upper electrode
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CN101506950A (zh
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阿列克谢·马拉赫塔诺夫
拉金德尔·德辛德萨
埃里克·赫德森
安德烈亚斯·菲舍尔
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/03—Mounting, supporting, spacing or insulating electrodes

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
CN2007800273793A 2006-07-18 2007-07-13 使用多频率rf功率的混合rf电容和电感耦合等离子源及其使用方法 Active CN101506950B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/487,999 US7837826B2 (en) 2006-07-18 2006-07-18 Hybrid RF capacitively and inductively coupled plasma source using multifrequency RF powers and methods of use thereof
US11/487,999 2006-07-18
PCT/US2007/015928 WO2008010943A2 (en) 2006-07-18 2007-07-13 Hybrid rf capacitively and inductively coupled plasma source using multifrequency rf powers and methods of use thereof

Publications (2)

Publication Number Publication Date
CN101506950A CN101506950A (zh) 2009-08-12
CN101506950B true CN101506950B (zh) 2011-03-30

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US (2) US7837826B2 (enExample)
JP (1) JP4995907B2 (enExample)
KR (1) KR101488538B1 (enExample)
CN (1) CN101506950B (enExample)
MY (1) MY149067A (enExample)
TW (1) TWI435664B (enExample)
WO (1) WO2008010943A2 (enExample)

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Publication number Publication date
KR101488538B1 (ko) 2015-02-02
US8222157B2 (en) 2012-07-17
US7837826B2 (en) 2010-11-23
KR20090031624A (ko) 2009-03-26
JP4995907B2 (ja) 2012-08-08
CN101506950A (zh) 2009-08-12
MY149067A (en) 2013-07-15
TW200824506A (en) 2008-06-01
WO2008010943A2 (en) 2008-01-24
TWI435664B (zh) 2014-04-21
US20080020574A1 (en) 2008-01-24
US20110059615A1 (en) 2011-03-10
WO2008010943A3 (en) 2009-04-09
JP2009544168A (ja) 2009-12-10

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