KR101487301B1 - 나노 임프린트 공정에서의 기판 정렬 시스템 및 방법 - Google Patents

나노 임프린트 공정에서의 기판 정렬 시스템 및 방법 Download PDF

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KR101487301B1
KR101487301B1 KR1020107001240A KR20107001240A KR101487301B1 KR 101487301 B1 KR101487301 B1 KR 101487301B1 KR 1020107001240 A KR1020107001240 A KR 1020107001240A KR 20107001240 A KR20107001240 A KR 20107001240A KR 101487301 B1 KR101487301 B1 KR 101487301B1
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substrate
template
grating
template mold
imprinted
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Korean (ko)
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KR20100050462A (ko
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파완 케이. 님마카야라
병진 최
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캐논 나노테크놀로지즈 인코퍼레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0277—Electrolithographic processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Multimedia (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020107001240A 2007-07-20 2008-07-18 나노 임프린트 공정에서의 기판 정렬 시스템 및 방법 Active KR101487301B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US95100207P 2007-07-20 2007-07-20
US60/951,002 2007-07-20
US12/175,258 US7837907B2 (en) 2007-07-20 2008-07-17 Alignment system and method for a substrate in a nano-imprint process
US12/175,258 2008-07-17
PCT/US2008/008817 WO2009014655A1 (en) 2007-07-20 2008-07-18 Alignment system and method for a substrate in a nano-imprint process

Publications (2)

Publication Number Publication Date
KR20100050462A KR20100050462A (ko) 2010-05-13
KR101487301B1 true KR101487301B1 (ko) 2015-01-28

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KR1020107001240A Active KR101487301B1 (ko) 2007-07-20 2008-07-18 나노 임프린트 공정에서의 기판 정렬 시스템 및 방법

Country Status (8)

Country Link
US (2) US7837907B2 (enExample)
EP (1) EP2171537B1 (enExample)
JP (1) JP4791597B2 (enExample)
KR (1) KR101487301B1 (enExample)
CN (1) CN101772733B (enExample)
AT (1) ATE556357T1 (enExample)
MY (1) MY150368A (enExample)
WO (1) WO2009014655A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102165655B1 (ko) 2019-07-25 2020-10-14 서원대학교산학협력단 패턴필름의 제조방법 및 상기 제조방법으로 제조된 패턴필름

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7630067B2 (en) * 2004-11-30 2009-12-08 Molecular Imprints, Inc. Interferometric analysis method for the manufacture of nano-scale devices
US20070231421A1 (en) * 2006-04-03 2007-10-04 Molecular Imprints, Inc. Enhanced Multi Channel Alignment
US7943080B2 (en) * 2005-12-23 2011-05-17 Asml Netherlands B.V. Alignment for imprint lithography
US8012395B2 (en) * 2006-04-18 2011-09-06 Molecular Imprints, Inc. Template having alignment marks formed of contrast material
US9573319B2 (en) 2007-02-06 2017-02-21 Canon Kabushiki Kaisha Imprinting method and process for producing a member in which a mold contacts a pattern forming layer
US8945444B2 (en) * 2007-12-04 2015-02-03 Canon Nanotechnologies, Inc. High throughput imprint based on contact line motion tracking control
US20090147237A1 (en) * 2007-12-05 2009-06-11 Molecular Imprints, Inc. Spatial Phase Feature Location
US20100079653A1 (en) * 2008-09-26 2010-04-01 Apple Inc. Portable computing system with a secondary image output
US7881603B2 (en) 2008-09-26 2011-02-01 Apple Inc. Dichroic aperture for electronic imaging device
US8610726B2 (en) * 2008-09-26 2013-12-17 Apple Inc. Computer systems and methods with projected display
US20100092599A1 (en) * 2008-10-10 2010-04-15 Molecular Imprints, Inc. Complementary Alignment Marks for Imprint Lithography
US8345242B2 (en) 2008-10-28 2013-01-01 Molecular Imprints, Inc. Optical system for use in stage control
US8432548B2 (en) * 2008-11-04 2013-04-30 Molecular Imprints, Inc. Alignment for edge field nano-imprinting
US8231821B2 (en) * 2008-11-04 2012-07-31 Molecular Imprints, Inc. Substrate alignment
US8715515B2 (en) * 2009-03-23 2014-05-06 Intevac, Inc. Process for optimization of island to trench ratio in patterned media
JP2010267357A (ja) * 2009-05-18 2010-11-25 Hitachi High-Technologies Corp パターンドメディアの製造方法及び製造装置
US9164375B2 (en) * 2009-06-19 2015-10-20 Canon Nanotechnologies, Inc. Dual zone template chuck
TWI431668B (zh) * 2009-06-24 2014-03-21 Ulvac Inc 真空成膜裝置及真空成膜裝置之擋板位置檢測方法
US8380878B2 (en) 2009-08-13 2013-02-19 Cox Communications, Inc. Side loading
KR101116321B1 (ko) * 2009-08-21 2012-03-09 에이피시스템 주식회사 기판 정렬 방법
NL2005259A (en) * 2009-09-29 2011-03-30 Asml Netherlands Bv Imprint lithography.
JP5563319B2 (ja) * 2010-01-19 2014-07-30 キヤノン株式会社 インプリント装置、および物品の製造方法
KR101772993B1 (ko) 2010-02-05 2017-08-31 캐논 나노테크놀로지즈 인코퍼레이티드 고 콘트라스트 정렬 마크를 갖는 주형
US8452077B2 (en) * 2010-02-17 2013-05-28 Applied Materials, Inc. Method for imaging workpiece surfaces at high robot transfer speeds with correction of motion-induced distortion
US8620064B2 (en) * 2010-02-17 2013-12-31 Applied Materials, Inc. Method for imaging workpiece surfaces at high robot transfer speeds with reduction or prevention of motion-induced distortion
US8698889B2 (en) * 2010-02-17 2014-04-15 Applied Materials, Inc. Metrology system for imaging workpiece surfaces at high robot transfer speeds
NL2005975A (en) 2010-03-03 2011-09-06 Asml Netherlands Bv Imprint lithography.
JP5539011B2 (ja) 2010-05-14 2014-07-02 キヤノン株式会社 インプリント装置、検出装置、位置合わせ装置、及び物品の製造方法
US8538132B2 (en) * 2010-09-24 2013-09-17 Apple Inc. Component concentricity
KR101861644B1 (ko) 2010-09-24 2018-05-28 캐논 나노테크놀로지즈 인코퍼레이티드 다단계 임프린팅을 통한 고콘트라스트 정렬 마크
JP5635870B2 (ja) 2010-10-22 2014-12-03 新日本無線株式会社 反射型フォトセンサを用いた位置検出装置
JP6306501B2 (ja) 2011-04-25 2018-04-04 キヤノン ナノテクノロジーズ，インコーポレーテッド テンプレートおよびテンプレートを基板と位置合わせするための方法
US8834146B2 (en) 2012-10-24 2014-09-16 Massachusetts Institute Of Technology System for passive alignment of surfaces
US9377683B2 (en) 2013-03-22 2016-06-28 HGST Netherlands B.V. Imprint template with optically-detectable alignment marks and method for making using block copolymers
JP5909210B2 (ja) 2013-07-11 2016-04-26 キヤノン株式会社 インプリント装置及び物品の製造方法
JP6395352B2 (ja) * 2013-07-12 2018-09-26 キヤノン株式会社 インプリント装置およびインプリント方法、それを用いた物品の製造方法
US9356061B2 (en) 2013-08-05 2016-05-31 Apple Inc. Image sensor with buried light shield and vertical gate
JP6499898B2 (ja) 2014-05-14 2019-04-10 株式会社ニューフレアテクノロジー 検査方法、テンプレート基板およびフォーカスオフセット方法
US9797846B2 (en) 2015-04-17 2017-10-24 Nuflare Technology, Inc. Inspection method and template
SG10201603103UA (en) 2015-04-30 2016-11-29 Canon Kk Imprint device, substrate conveying device, imprinting method, and method for manufacturing article
JP6583747B2 (ja) * 2015-09-29 2019-10-02 大日本印刷株式会社 インプリント用のモールドおよびその製造方法
NL2018564A (en) 2016-03-30 2017-10-05 Asml Netherlands Bv Substrate edge detection
AU2017315774B2 (en) * 2016-08-26 2021-05-13 Molecular Imprints, Inc. Edge sealant confinement and halo reduction for optical devices
KR102426957B1 (ko) * 2017-10-17 2022-08-01 캐논 가부시끼가이샤 임프린트 장치, 및 물품의 제조 방법
WO2019241398A1 (en) 2018-06-12 2019-12-19 Wendong Xing Edge sealant application for optical devices
EP3827303B1 (en) 2018-07-23 2023-07-05 Magic Leap, Inc. Optical device venting gaps for edge sealant and lamination dam
JP2020035924A (ja) * 2018-08-30 2020-03-05 キオクシア株式会社 原版
WO2020081672A1 (en) 2018-10-16 2020-04-23 Magic Leap, Inc. Methods and apparatuses for casting polymer products
JP7337682B2 (ja) * 2019-12-18 2023-09-04 キヤノン株式会社 インプリント装置、インプリント方法、及び物品の製造方法
CN113119642B (zh) * 2021-04-13 2022-07-01 北京黎马敦太平洋包装有限公司 一种压印工作站
CN114326340B (zh) * 2022-01-14 2024-04-02 苏州新维度微纳科技有限公司 纳米压印对准方法及系统

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6417922B1 (en) * 1997-12-29 2002-07-09 Asml Netherlands B.V. Alignment device and lithographic apparatus comprising such a device
US6919152B2 (en) * 2000-07-16 2005-07-19 Board Of Regents, The University Of Texas System High resolution overlay alignment systems for imprint lithography
US7027156B2 (en) * 2002-08-01 2006-04-11 Molecular Imprints, Inc. Scatterometry alignment for imprint lithography
US20070002298A1 (en) 2005-06-30 2007-01-04 Asml Netherlands B.V. Lithographic apparatus substrate alignment

Family Cites Families (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4024944A (en) * 1975-12-24 1977-05-24 Texas Instruments Incorporated Semiconductor slice prealignment system
NL7606548A (nl) * 1976-06-17 1977-12-20 Philips Nv Werkwijze en inrichting voor het uitrichten van een i.c.-patroon ten opzichte van een halfgelei- dend substraat.
NL8600639A (nl) * 1986-03-12 1987-10-01 Asm Lithography Bv Werkwijze voor het ten opzichte van elkaar uitrichten van een masker en een substraat en inrichting voor het uitvoeren van de werkwijze.
JPH08167559A (ja) * 1994-12-15 1996-06-25 Nikon Corp アライメント方法及び装置
US6034378A (en) * 1995-02-01 2000-03-07 Nikon Corporation Method of detecting position of mark on substrate, position detection apparatus using this method, and exposure apparatus using this position detection apparatus
JPH09297408A (ja) * 1996-05-08 1997-11-18 Nikon Corp プリアライメント装置
JPH1186346A (ja) * 1997-09-09 1999-03-30 Sony Corp 光ディスク、光ディスクの製造方法及び光ディスク原盤の製造方法
JP2000323461A (ja) * 1999-05-11 2000-11-24 Nec Corp 微細パターン形成装置、その製造方法、および形成方法
US7432634B2 (en) * 2000-10-27 2008-10-07 Board Of Regents, University Of Texas System Remote center compliant flexure device
US6873087B1 (en) * 1999-10-29 2005-03-29 Board Of Regents, The University Of Texas System High precision orientation alignment and gap control stages for imprint lithography processes
TWI231405B (en) * 1999-12-22 2005-04-21 Asml Netherlands Bv Lithographic projection apparatus, position detection device, and method of manufacturing a device using a lithographic projection apparatus
TWI282909B (en) * 1999-12-23 2007-06-21 Asml Netherlands Bv Lithographic apparatus and a method for manufacturing a device
US6462818B1 (en) * 2000-06-22 2002-10-08 Kla-Tencor Corporation Overlay alignment mark design
US6696220B2 (en) * 2000-10-12 2004-02-24 Board Of Regents, The University Of Texas System Template for room temperature, low pressure micro-and nano-imprint lithography
KR20030040378A (ko) * 2000-08-01 2003-05-22 보드 오브 리전츠, 더 유니버시티 오브 텍사스 시스템 임프린트 리소그래피를 위한 투명한 템플릿과 기판사이의고정확성 갭 및 방향설정 감지 방법
WO2002017383A2 (en) * 2000-08-21 2002-02-28 Board Of Regents, The University Of Texas System Flexure based translation stage
US6486954B1 (en) * 2000-09-01 2002-11-26 Kla-Tencor Technologies Corporation Overlay alignment measurement mark
US7387508B2 (en) * 2004-06-01 2008-06-17 Molecular Imprints Inc. Compliant device for nano-scale manufacturing
US20060005657A1 (en) * 2004-06-01 2006-01-12 Molecular Imprints, Inc. Method and system to control movement of a body for nano-scale manufacturing
US20050274219A1 (en) * 2004-06-01 2005-12-15 Molecular Imprints, Inc. Method and system to control movement of a body for nano-scale manufacturing
TW556296B (en) * 2000-12-27 2003-10-01 Koninkl Philips Electronics Nv Method of measuring alignment of a substrate with respect to a reference alignment mark
US20050064344A1 (en) * 2003-09-18 2005-03-24 University Of Texas System Board Of Regents Imprint lithography templates having alignment marks
US7077992B2 (en) * 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US6932934B2 (en) * 2002-07-11 2005-08-23 Molecular Imprints, Inc. Formation of discontinuous films during an imprint lithography process
AU2003261317A1 (en) * 2002-08-01 2004-02-23 Molecular Imprints, Inc. Scatterometry alignment for imprint lithography
US6916584B2 (en) * 2002-08-01 2005-07-12 Molecular Imprints, Inc. Alignment methods for imprint lithography
US7070405B2 (en) * 2002-08-01 2006-07-04 Molecular Imprints, Inc. Alignment systems for imprint lithography
US6936194B2 (en) * 2002-09-05 2005-08-30 Molecular Imprints, Inc. Functional patterning material for imprint lithography processes
US20040065252A1 (en) * 2002-10-04 2004-04-08 Sreenivasan Sidlgata V. Method of forming a layer on a substrate to facilitate fabrication of metrology standards
US8349241B2 (en) * 2002-10-04 2013-01-08 Molecular Imprints, Inc. Method to arrange features on a substrate to replicate features having minimal dimensional variability
US6929762B2 (en) * 2002-11-13 2005-08-16 Molecular Imprints, Inc. Method of reducing pattern distortions during imprint lithography processes
MY136129A (en) * 2002-12-13 2008-08-29 Molecular Imprints Inc Magnification correction employing out-of-plane distortion of a substrate
US7179396B2 (en) * 2003-03-25 2007-02-20 Molecular Imprints, Inc. Positive tone bi-layer imprint lithography method
US7396475B2 (en) * 2003-04-25 2008-07-08 Molecular Imprints, Inc. Method of forming stepped structures employing imprint lithography
US6951173B1 (en) * 2003-05-14 2005-10-04 Molecular Imprints, Inc. Assembly and method for transferring imprint lithography templates
US7150622B2 (en) * 2003-07-09 2006-12-19 Molecular Imprints, Inc. Systems for magnification and distortion correction for imprint lithography processes
US7136150B2 (en) * 2003-09-25 2006-11-14 Molecular Imprints, Inc. Imprint lithography template having opaque alignment marks
JP2005116978A (ja) * 2003-10-10 2005-04-28 Sumitomo Heavy Ind Ltd ナノインプリント装置及び方法
JP2005153091A (ja) * 2003-11-27 2005-06-16 Hitachi Ltd 転写方法及び転写装置
US20050275311A1 (en) * 2004-06-01 2005-12-15 Molecular Imprints, Inc. Compliant device for nano-scale manufacturing
US7768624B2 (en) * 2004-06-03 2010-08-03 Board Of Regents, The University Of Texas System Method for obtaining force combinations for template deformation using nullspace and methods optimization techniques
US20050270516A1 (en) * 2004-06-03 2005-12-08 Molecular Imprints, Inc. System for magnification and distortion correction during nano-scale manufacturing
EP1774407B1 (en) * 2004-06-03 2017-08-09 Board of Regents, The University of Texas System System and method for improvement of alignment and overlay for microlithography
JP2006013400A (ja) * 2004-06-29 2006-01-12 Canon Inc ２つの対象物間の相対的位置ずれ検出方法及び装置
JP4550504B2 (ja) * 2004-07-22 2010-09-22 株式会社日立製作所 記録媒体の製造方法
US7650481B2 (en) * 2004-11-24 2010-01-19 Qualcomm Incorporated Dynamic control of memory access speed
US20070231421A1 (en) * 2006-04-03 2007-10-04 Molecular Imprints, Inc. Enhanced Multi Channel Alignment
US7630067B2 (en) * 2004-11-30 2009-12-08 Molecular Imprints, Inc. Interferometric analysis method for the manufacture of nano-scale devices
US7292326B2 (en) * 2004-11-30 2007-11-06 Molecular Imprints, Inc. Interferometric analysis for the manufacture of nano-scale devices
JP5198071B2 (ja) * 2004-12-01 2013-05-15 モレキュラー・インプリンツ・インコーポレーテッド インプリントリソグラフィ・プロセスにおける熱管理のための露光方法
KR100647314B1 (ko) * 2005-01-31 2006-11-23 삼성전자주식회사 나노 임프린트 리소그래피용 정렬시스템 및 이를 채용한임프린트 리소그래피 방법
JP4290177B2 (ja) * 2005-06-08 2009-07-01 キヤノン株式会社 モールド、アライメント方法、パターン形成装置、パターン転写装置、及びチップの製造方法
US7342642B2 (en) * 2005-06-20 2008-03-11 Asml Netherlands B.V. Pre-aligning a substrate in a lithographic apparatus, device manufacturing method, and device manufactured by the manufacturing method
JP4987012B2 (ja) * 2005-12-08 2012-07-25 モレキュラー・インプリンツ・インコーポレーテッド 基板の両面パターニングする方法及びシステム
US7670530B2 (en) * 2006-01-20 2010-03-02 Molecular Imprints, Inc. Patterning substrates employing multiple chucks
JP4735280B2 (ja) * 2006-01-18 2011-07-27 株式会社日立製作所 パターン形成方法
JP4736821B2 (ja) * 2006-01-24 2011-07-27 株式会社日立製作所 パターン形成方法およびパターン形成装置
US7802978B2 (en) * 2006-04-03 2010-09-28 Molecular Imprints, Inc. Imprinting of partial fields at the edge of the wafer
JP5306989B2 (ja) * 2006-04-03 2013-10-02 モレキュラー・インプリンツ・インコーポレーテッド 複数のフィールド及びアライメント・マークを有する基板を同時にパターニングする方法
JP4185941B2 (ja) * 2006-04-04 2008-11-26 キヤノン株式会社 ナノインプリント方法及びナノインプリント装置
US7547398B2 (en) * 2006-04-18 2009-06-16 Molecular Imprints, Inc. Self-aligned process for fabricating imprint templates containing variously etched features
JP4795300B2 (ja) * 2006-04-18 2011-10-19 キヤノン株式会社 位置合わせ方法、インプリント方法、位置合わせ装置、インプリント装置、及び位置計測方法
JP4848832B2 (ja) * 2006-05-09 2011-12-28 凸版印刷株式会社 ナノインプリント装置及びナノインプリント方法
JP2008276920A (ja) * 2007-03-30 2008-11-13 Pioneer Electronic Corp インプリント装置およびインプリント方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6417922B1 (en) * 1997-12-29 2002-07-09 Asml Netherlands B.V. Alignment device and lithographic apparatus comprising such a device
US6919152B2 (en) * 2000-07-16 2005-07-19 Board Of Regents, The University Of Texas System High resolution overlay alignment systems for imprint lithography
US7027156B2 (en) * 2002-08-01 2006-04-11 Molecular Imprints, Inc. Scatterometry alignment for imprint lithography
US20070002298A1 (en) 2005-06-30 2007-01-04 Asml Netherlands B.V. Lithographic apparatus substrate alignment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102165655B1 (ko) 2019-07-25 2020-10-14 서원대학교산학협력단 패턴필름의 제조방법 및 상기 제조방법으로 제조된 패턴필름

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US7837907B2 (en) 2010-11-23
CN101772733B (zh) 2013-09-18
US20090026657A1 (en) 2009-01-29
WO2009014655A1 (en) 2009-01-29
MY150368A (en) 2013-12-31
EP2171537A4 (en) 2010-08-04
CN101772733A (zh) 2010-07-07
EP2171537A1 (en) 2010-04-07
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US8147731B2 (en) 2012-04-03
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