KR101466533B1 - 노광 방법, 노광 장치 및 액체 공급 방법 - Google Patents

노광 방법, 노광 장치 및 액체 공급 방법 Download PDF

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Publication number
KR101466533B1
KR101466533B1 KR1020137021972A KR20137021972A KR101466533B1 KR 101466533 B1 KR101466533 B1 KR 101466533B1 KR 1020137021972 A KR1020137021972 A KR 1020137021972A KR 20137021972 A KR20137021972 A KR 20137021972A KR 101466533 B1 KR101466533 B1 KR 101466533B1
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KR
South Korea
Prior art keywords
liquid
optical system
projection optical
light
stage
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Expired - Fee Related
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KR1020137021972A
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English (en)
Korean (ko)
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KR20130105922A (ko
Inventor
겐이치 시라이시
류이치 호시카
도모하루 후지와라
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가부시키가이샤 니콘
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020137021972A 2005-04-25 2006-04-21 노광 방법, 노광 장치 및 액체 공급 방법 Expired - Fee Related KR101466533B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2005127025 2005-04-25
JPJP-P-2005-127025 2005-04-25
JPJP-P-2005-238373 2005-08-19
JP2005238373 2005-08-19
PCT/JP2006/308385 WO2006115186A1 (ja) 2005-04-25 2006-04-21 露光方法及び露光装置、並びにデバイス製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020137000873A Division KR101344142B1 (ko) 2005-04-25 2006-04-21 노광 방법, 노광 장치, 및 디바이스 제조 방법

Publications (2)

Publication Number Publication Date
KR20130105922A KR20130105922A (ko) 2013-09-26
KR101466533B1 true KR101466533B1 (ko) 2014-11-27

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KR1020137021972A Expired - Fee Related KR101466533B1 (ko) 2005-04-25 2006-04-21 노광 방법, 노광 장치 및 액체 공급 방법
KR1020137000873A Expired - Fee Related KR101344142B1 (ko) 2005-04-25 2006-04-21 노광 방법, 노광 장치, 및 디바이스 제조 방법
KR1020077002004A Expired - Fee Related KR101396620B1 (ko) 2005-04-25 2006-04-21 노광 방법, 노광 장치, 및 디바이스 제조 방법

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KR1020137000873A Expired - Fee Related KR101344142B1 (ko) 2005-04-25 2006-04-21 노광 방법, 노광 장치, 및 디바이스 제조 방법
KR1020077002004A Expired - Fee Related KR101396620B1 (ko) 2005-04-25 2006-04-21 노광 방법, 노광 장치, 및 디바이스 제조 방법

Country Status (5)

Country Link
US (3) US8064039B2 (enExample)
EP (1) EP1876635A4 (enExample)
JP (5) JP5125505B2 (enExample)
KR (3) KR101466533B1 (enExample)
WO (1) WO2006115186A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2738792B1 (en) * 2003-06-13 2015-08-05 Nikon Corporation Exposure method, substrate stage, exposure apparatus, and device manufacturing method
JP4295712B2 (ja) * 2003-11-14 2009-07-15 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置及び装置製造方法
WO2006115186A1 (ja) * 2005-04-25 2006-11-02 Nikon Corporation 露光方法及び露光装置、並びにデバイス製造方法
US20070085989A1 (en) * 2005-06-21 2007-04-19 Nikon Corporation Exposure apparatus and exposure method, maintenance method, and device manufacturing method
JP2008042004A (ja) * 2006-08-08 2008-02-21 Tokyo Electron Ltd パターン形成方法およびパターン形成装置
NL1036009A1 (nl) * 2007-10-05 2009-04-07 Asml Netherlands Bv An Immersion Lithography Apparatus.
US8451425B2 (en) * 2007-12-28 2013-05-28 Nikon Corporation Exposure apparatus, exposure method, cleaning apparatus, and device manufacturing method
KR101712219B1 (ko) 2009-03-10 2017-03-03 가부시키가이샤 니콘 노광 장치, 노광 방법, 및 디바이스 제조 방법
NL2004322A (en) * 2009-04-13 2010-10-14 Asml Netherlands Bv Cooling device, cooling arrangement and lithographic apparatus comprising a cooling arrangement.
NL2004242A (en) 2009-04-13 2010-10-14 Asml Netherlands Bv Detector module, cooling arrangement and lithographic apparatus comprising a detector module.
WO2011155529A1 (ja) * 2010-06-10 2011-12-15 株式会社ニコン 計測部材、ステージ装置、露光装置、露光方法、及びデバイス製造方法
NL2009899A (en) * 2011-12-20 2013-06-24 Asml Netherlands Bv A pump system, a carbon dioxide supply system, an extraction system, a lithographic apparatus and a device manufacturing method.
CN104321702B (zh) * 2012-05-22 2016-11-23 Asml荷兰有限公司 传感器、光刻设备以及器件制造方法
JP6206945B2 (ja) * 2013-03-07 2017-10-04 株式会社ブイ・テクノロジー 走査露光装置及び走査露光方法
US10060475B2 (en) * 2014-12-24 2018-08-28 Teradyne, Inc. Braking system
JP6070784B2 (ja) * 2015-07-14 2017-02-01 株式会社ニコン 液体供給装置、露光装置、液体供給方法、及びデバイス製造方法
WO2019073718A1 (ja) * 2017-10-13 2019-04-18 富士フイルム株式会社 透過フィルター及び液浸露光装置
US10652441B1 (en) * 2019-05-10 2020-05-12 The Boeing Company Systems and methods for protecting imaging devices against high-radiant-flux light
KR102957710B1 (ko) * 2019-11-14 2026-04-24 에이에스엠엘 네델란즈 비.브이. 기판 지지부, 리소그래피 장치, 전하 분포를 조작하기 위한 방법 및 기판을 준비하기 위한 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999049504A1 (fr) 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
JP2004111473A (ja) 2002-09-13 2004-04-08 Nikon Corp 位置検出方法及び装置、露光方法及び装置
JP2005005713A (ja) 2003-06-11 2005-01-06 Asml Netherlands Bv リソグラフィ装置及びデバイス製造方法
JP4295174B2 (ja) 2003-07-31 2009-07-15 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置およびデバイス製造方法

Family Cites Families (77)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4346164A (en) * 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
JPS57117238A (en) * 1981-01-14 1982-07-21 Nippon Kogaku Kk <Nikon> Exposing and baking device for manufacturing integrated circuit with illuminometer
JPS57153433A (en) * 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS58202448A (ja) 1982-05-21 1983-11-25 Hitachi Ltd 露光装置
JPS5919912A (ja) 1982-07-26 1984-02-01 Hitachi Ltd 液浸距離保持装置
DD221563A1 (de) 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
DD224448A1 (de) 1984-03-01 1985-07-03 Zeiss Jena Veb Carl Einrichtung zur fotolithografischen strukturuebertragung
JPS6265326A (ja) 1985-09-18 1987-03-24 Hitachi Ltd 露光装置
JPS63157419A (ja) 1986-12-22 1988-06-30 Toshiba Corp 微細パタ−ン転写装置
JP2897355B2 (ja) * 1990-07-05 1999-05-31 株式会社ニコン アライメント方法，露光装置，並びに位置検出方法及び装置
US5175124A (en) * 1991-03-25 1992-12-29 Motorola, Inc. Process for fabricating a semiconductor device using re-ionized rinse water
JPH04305917A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH04305915A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
US5243195A (en) * 1991-04-25 1993-09-07 Nikon Corporation Projection exposure apparatus having an off-axis alignment system and method of alignment therefor
JPH0562877A (ja) 1991-09-02 1993-03-12 Yasuko Shinohara 光によるｌｓｉ製造縮小投影露光装置の光学系
JPH06124873A (ja) 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
KR100300618B1 (ko) * 1992-12-25 2001-11-22 오노 시게오 노광방법,노광장치,및그장치를사용하는디바이스제조방법
JP3412704B2 (ja) * 1993-02-26 2003-06-03 株式会社ニコン 投影露光方法及び装置、並びに露光装置
JP3301153B2 (ja) * 1993-04-06 2002-07-15 株式会社ニコン 投影露光装置、露光方法、及び素子製造方法
JP2662925B2 (ja) 1993-04-09 1997-10-15 株式会社フロンテック 高比抵抗液体の静電気除去方法及び装置
JPH07220990A (ja) 1994-01-28 1995-08-18 Hitachi Ltd パターン形成方法及びその露光装置
JPH08316124A (ja) * 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JPH08316125A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
US5825043A (en) * 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
CN1244018C (zh) * 1996-11-28 2006-03-01 株式会社尼康 曝光方法和曝光装置
KR100512450B1 (ko) * 1996-12-24 2006-01-27 에이에스엠엘 네델란즈 비.브이. 두개의물체홀더를가진이차원적으로안정화된위치설정장치와이런위치설정장치를구비한리소그래픽장치
JPH10202242A (ja) * 1997-01-23 1998-08-04 Ngk Insulators Ltd 超純水の比抵抗調整方法
JP3747566B2 (ja) 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JP3817836B2 (ja) 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
JPH11176727A (ja) 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
US6897963B1 (en) * 1997-12-18 2005-05-24 Nikon Corporation Stage device and exposure apparatus
WO1999060361A1 (en) 1998-05-19 1999-11-25 Nikon Corporation Aberration measuring instrument and measuring method, projection exposure apparatus provided with the instrument and device-manufacturing method using the measuring method, and exposure method
JP2000058436A (ja) 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
JP2001188356A (ja) * 1999-12-28 2001-07-10 Asahi Kasei Corp 感光性エラストマー組成物の現像剤及びそれを用いた製版方法
US20020041377A1 (en) * 2000-04-25 2002-04-11 Nikon Corporation Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
US20020163629A1 (en) * 2001-05-07 2002-11-07 Michael Switkes Methods and apparatus employing an index matching medium
TW529172B (en) * 2001-07-24 2003-04-21 Asml Netherlands Bv Imaging apparatus
US6828542B2 (en) * 2002-06-07 2004-12-07 Brion Technologies, Inc. System and method for lithography process monitoring and control
US7033602B1 (en) * 2002-06-21 2006-04-25 Advanced Cardiovascular Systems, Inc. Polycationic peptide coatings and methods of coating implantable medical devices
WO2004019128A2 (en) * 2002-08-23 2004-03-04 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
SG135052A1 (en) * 2002-11-12 2007-09-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
CN101470360B (zh) * 2002-11-12 2013-07-24 Asml荷兰有限公司 光刻装置和器件制造方法
CN100568101C (zh) * 2002-11-12 2009-12-09 Asml荷兰有限公司 光刻装置和器件制造方法
KR101921572B1 (ko) 2003-02-26 2018-11-26 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
SG2014015184A (en) 2003-04-10 2015-06-29 Nippon Kogaku Kk Environmental system including vacuum scavange for an immersion lithography apparatus
TWI295414B (en) 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
TW201415536A (zh) * 2003-05-23 2014-04-16 尼康股份有限公司 曝光方法及曝光裝置以及元件製造方法
US7317504B2 (en) * 2004-04-08 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2738792B1 (en) * 2003-06-13 2015-08-05 Nikon Corporation Exposure method, substrate stage, exposure apparatus, and device manufacturing method
EP3179309A1 (en) * 2003-07-08 2017-06-14 Nikon Corporation Wafer table for immersion lithography
KR101211451B1 (ko) * 2003-07-09 2012-12-12 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7070915B2 (en) * 2003-08-29 2006-07-04 Tokyo Electron Limited Method and system for drying a substrate
JP3870182B2 (ja) * 2003-09-09 2007-01-17 キヤノン株式会社 露光装置及びデバイス製造方法
EP1670040B1 (en) * 2003-09-29 2012-08-08 Nikon Corporation Projection exposure apparatus, projection exposure method, and device manufacturing method
JP2005136374A (ja) * 2003-10-06 2005-05-26 Matsushita Electric Ind Co Ltd 半導体製造装置及びそれを用いたパターン形成方法
EP3370115A1 (en) 2003-12-03 2018-09-05 Nikon Corporation Exposure apparatus, exposure method and method for producing a device
JP4323946B2 (ja) * 2003-12-19 2009-09-02 キヤノン株式会社 露光装置
JP4018647B2 (ja) * 2004-02-09 2007-12-05 キヤノン株式会社 投影露光装置およびデバイス製造方法
JP4385821B2 (ja) * 2004-03-30 2009-12-16 トヨタ自動車株式会社 車両搭載作動装置の制御装置および波動強度特性取得装置
JP3981368B2 (ja) * 2004-05-17 2007-09-26 松下電器産業株式会社 パターン形成方法
KR101368523B1 (ko) * 2004-06-04 2014-02-27 칼 짜이스 에스엠테 게엠베하 광학적 결상 시스템의 결상 품질을 측정하기 위한 시스템
CN103605262B (zh) * 2004-06-09 2016-06-29 株式会社尼康 曝光装置及其维护方法、以及元件制造方法
JP2006019585A (ja) * 2004-07-02 2006-01-19 Advanced Lcd Technologies Development Center Co Ltd 露光装置およびその方法ならびに基板処理装置
JP4551704B2 (ja) * 2004-07-08 2010-09-29 富士フイルム株式会社 液浸露光用保護膜形成組成物及びそれを用いたパターン形成方法
JP2006024819A (ja) * 2004-07-09 2006-01-26 Renesas Technology Corp 液浸露光装置、及び電子デバイスの製造方法
US7026441B2 (en) * 2004-08-12 2006-04-11 Intel Corporation Thermoresponsive sensor comprising a polymer solution
US7041989B1 (en) * 2004-10-22 2006-05-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7623218B2 (en) * 2004-11-24 2009-11-24 Carl Zeiss Smt Ag Method of manufacturing a miniaturized device
JP2006173340A (ja) * 2004-12-15 2006-06-29 Jsr Corp 露光装置、及び露光方法
US7528931B2 (en) * 2004-12-20 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4488890B2 (ja) * 2004-12-27 2010-06-23 株式会社東芝 レジストパターン形成方法及び半導体装置の製造方法
US7450217B2 (en) * 2005-01-12 2008-11-11 Asml Netherlands B.V. Exposure apparatus, coatings for exposure apparatus, lithographic apparatus, device manufacturing method, and device manufactured thereby
EP1849040A2 (en) * 2005-02-10 2007-10-31 ASML Netherlands B.V. Immersion liquid, exposure apparatus, and exposure process
CN100425330C (zh) * 2005-03-31 2008-10-15 鸿富锦精密工业（深圳）有限公司 光催化增强装置
WO2006115186A1 (ja) * 2005-04-25 2006-11-02 Nikon Corporation 露光方法及び露光装置、並びにデバイス製造方法
US7420188B2 (en) * 2005-10-14 2008-09-02 Taiwan Semiconductor Manufacturing Company, Ltd. Exposure method and apparatus for immersion lithography

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999049504A1 (fr) 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
JP2004111473A (ja) 2002-09-13 2004-04-08 Nikon Corp 位置検出方法及び装置、露光方法及び装置
JP2005005713A (ja) 2003-06-11 2005-01-06 Asml Netherlands Bv リソグラフィ装置及びデバイス製造方法
JP4295174B2 (ja) 2003-07-31 2009-07-15 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置およびデバイス製造方法

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US9335639B2 (en) 2016-05-10
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US8064039B2 (en) 2011-11-22
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US20120044469A1 (en) 2012-02-23
JP2014057103A (ja) 2014-03-27

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