WO1999060361A1 - Aberration measuring instrument and measuring method, projection exposure apparatus provided with the instrument and device-manufacturing method using the measuring method, and exposure method - Google Patents

Aberration measuring instrument and measuring method, projection exposure apparatus provided with the instrument and device-manufacturing method using the measuring method, and exposure method Download PDF

Info

Publication number
WO1999060361A1
WO1999060361A1 PCT/JP1999/002608 JP9902608W WO9960361A1 WO 1999060361 A1 WO1999060361 A1 WO 1999060361A1 JP 9902608 W JP9902608 W JP 9902608W WO 9960361 A1 WO9960361 A1 WO 9960361A1
Authority
WO
WIPO (PCT)
Prior art keywords
aberration
optical system
light
measuring
projection
Prior art date
Application number
PCT/JP1999/002608
Other languages
French (fr)
Japanese (ja)
Inventor
Hitoshi Takeuchi
Original Assignee
Nikon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP10/153915 priority Critical
Priority to JP15391598 priority
Application filed by Nikon Corporation filed Critical Nikon Corporation
Publication of WO1999060361A1 publication Critical patent/WO1999060361A1/en
Priority claimed from US09/714,183 external-priority patent/US6819414B1/en

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01MTESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02Testing optical properties
    • G01M11/0242Testing optical properties by measuring geometrical properties or aberrations
    • G01M11/0257Testing optical properties by measuring geometrical properties or aberrations by analyzing the image formed by the object to be tested
    • G01M11/0264Testing optical properties by measuring geometrical properties or aberrations by analyzing the image formed by the object to be tested by using targets or reference patterns
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01MTESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02Testing optical properties
    • G01M11/0242Testing optical properties by measuring geometrical properties or aberrations
    • G01M11/0271Testing optical properties by measuring geometrical properties or aberrations by using interferometric methods
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
    • G03F7/70591Testing optical components
    • G03F7/706Aberration measurement

Abstract

There are provided a focusing lens (L) for focusing a light beam passing through an object optical system (PL) onto a predetermined face (IP), an aperture stop (AP) for passing part of the light beam therethrough, a focusing position measuring section (DET) for measuring the deviation of the focusing position (P) of the part of the light beam, which has passed through the aperture stop, on the predetermined face (IP), a shifting section (M) for shifting the aperture stop in the direction crossing the optical axis of the light beam, and a calculating section (PC) for calculating the aberration of the object optical system (PL) based on the output signal from the focusing position measuring section (DET).

Description

Specification

Projection exposure apparatus and device manufacturing method using the method comprising the aberration measuring apparatus and method and the apparatus, exposure method art

The present invention, the optical system to be measured, in particular semiconductor devices, or wavefront yield difference of the projection optical system provided in the projection exposure apparatus or the like that is used to manufacture a liquid crystal display device, a wavefront aberration measuring apparatus and measures the optical performance the projection exposure apparatus and method comprises a measurement method and the apparatus and a device manufacturing method using a. The present application is the basis of the first 5 3 9 1 5 Japanese Patent Application 1998 year, the contents of which herein incorporated by reference. Background of technology

Conventionally, when measuring the wavefront aberration of the optical system, a method to use an interference optical system. The method according to the interference optical system, Twyman-Green type interferometer target optical system which is measured by those measures incorporated in the interference optical system, such as Fizeau interferometer is known. For example, Twyman 'Green type interferometer, divided into two light beams from the laser light source by a half mirror, one of the light beam is transmitted through the optical system, the other light beam is a reference beam. And one in which to interfere with the reference light and the light transmitted through the target optical system, measuring the aberration of the optical system to be measured from the interference fringes.

Further, S hack- H artmann (hereinafter, "Shatsuku Hartmann" hereinafter) as a method of measuring the wavefront of light from the optical system to be measured the method of using the system and call Bareru lens array has been known (parity Vo l. 0 5, No. 1 0, 1 9 9 0- 1 0 of P 3 7~ 3 9). The Shatsuku - Hartmann wavefront measurement using is to measure the fluctuation of the wavefront from the celestial, as shown in FIG. 9, first, a wavefront (hereinafter transmitted through the target optical system TL (here indicating the telescope), into parallel light) that "measured wavefront" at collimating Isseki lens CL. Then, to enter the lens having an array of microlenses L 'in a two-dimensional (hereinafter referred to as "two-dimensional lens array"). Here, when the measured wavefront has a deviation from the ideal wavefront, the deviation of the deviation is condensing position of the condensing position and measured wavefront ideal wavefront converging position detecting section DET on and to appear. Thus, based on the position deviation of the focal point of each lens of a two-dimensional lens array is for the measurement of the wavefront.

However, the above conventional art, the following problems occur. The interferometer method requires a dedicated interference optical system apparatus for wavefront aberration measurement. Because susceptible to vibrations because the device for measuring the interference wave length order, stabilization stage, such as is also required. Therefore, apparatus is efficient use of space increased in size poor problem.

Shatsuku-Bruno, wavefront measurement by Rutoman method, as described above, since the main purpose of measuring the fluctuation of the wavefront from the original original celestial, using a projection exposure apparatus for manufacturing semiconductor devices, etc. the wavefront aberration of the lens for was not be measured.

In accordance with the wavefront measurement Shatsuku Hartmann method, uses a two-dimensional lens Zuarei with high accuracy, when it exists variations in each of the accuracy of the lens array, so also decreases the detection accuracy of the focusing position, high accuracy wavefront there is a possibility that can not be a measuring child to. Disclosure of the Invention

The present invention has been made in view of the above problems, small and is easy to manufacture, the aberration measuring apparatus and how can conveniently measured wavefront aberration with high accuracy and a projection exposure apparatus and method comprising the apparatus the device manufacturing method using, and to provide an exposure method.

To achieve the above object, the invention according to claim 1, wherein the includes a condenser lens for condensing onto predetermined mens IP) a light flux passing through the target optical system (PL) (L),

Aperture for passing a portion of said light beam and (AP),

Moving part for moving the aperture stop in a direction intersecting the optical axis (AX) of said light beam and (M),

Condensing position detector for detecting a positional deviation of a part of the condensing positions of the light beam passing through the aperture stop on the predetermined plane (P) and (DET),

Providing aberration measurement equipment characterized by having a processing unit (PC) for calculating the aberration of the target optical system based on an output signal from the focusing position detecting unit.

Direction invention according to claim 2, wherein, said condensing lens is a part of the light beam is condensed, wherein the mobile unit is intersecting the optical axis of the light beam and the aperture stop and the condensing lens as an integral wherein the moving the.

The present invention in a third aspect of the claim, the aberration measuring apparatus for measurement of the aberrations of the mask projection optical system an image of a predetermined circuit pattern formed in the (R) is transferred onto the substrate (WH) (PL),

Aberration measuring optical system which emits light for aberration measurement in the projection optical system and (PH),

A plurality of lenses element for condensing light for aberration measurement which has passed through the projection optical system (L '),

Condensing position detecting unit which detects the plurality of lens elements condensed been the position of the light respectively (DET),

Based on the detected position of the light in the light converging position detecting section, to provide a yield difference measuring apparatus characterized by having a measurement unit (PC) for measuring the aberration of the projection optical system. Here, the aberration measurement optical system refers to etc. transmitting member that transmits by diffusing pinholes or light Rechiku Le or stages will be described later.

The present invention in a fourth aspect of the claim, the aberration measuring optical system, said a predetermined circuit mask pattern is formed (R) substantially disposed in the same position, and the aberration measurement mask comprising pinholes pattern, the aberration characterized in that it comprises an illumination optical system for illuminating the measurement mask (1 1 0).

The present invention in a fifth aspect of the claim, the illumination optical system is characterized in that the a predetermined circuit path evening illumination optical system for illuminating the over switch (1 to 1 0). The invention according to claim 6, wherein the steps condenser for condensing onto the predetermined plane (IP) by the light beam a converging lens which has passed through the target optical system (PL) (L), a portion of the light beam a step of passing the aperture stop (AP), a moving step of moving the aperture stop in a direction intersecting the optical axis (AX) of said light beam,

A focusing position detecting step of detecting the positional deviation of the part of the condensing positions of the light beam passing through the aperture stop on the predetermined plane (P) condensing position detecting section by (DET),

Providing aberration measuring how, characterized in that it consists of a calculation processing step of calculating the aberration of the target optical system based on an output signal obtained by the light converging position detecting step.

Direction present invention in a seventh aspect of the claim, and in the condensing step and condensing the portion of the light beam, the mobile process, which intersects with the optical axis of the light beam as a unit and the aperture stop and the converging lens wherein the moving the.

Invention according to claim 8, wherein, in the aberration measuring method to measure the aberration of the mask projection optical system an image of a predetermined circuit pattern formed in the (R) formed on the substrate (WH) (PL), light for aberration measurement which has passed through said projection optical system condenses to a plurality of lens elements (L '),

It said plurality of lens elements condensed been the position of the light detected respectively, based on the detected position of the light, to provide an aberration measuring method characterized that you measure the aberration of the projection optical system .

The present invention in a ninth aspect of the claims are light for aberration measurement is a light from pinholes patterns on positions substantially aberration measurement mask arranged in the same position in which the mask is placed (PH) it is characterized in.

Invention according to claim 10, wherein the illumination optical science system that illuminates a predetermined circuit pattern (1 to 1 0),

A projection optical system for forming an image of the illuminated the circuit pattern on the substrate (WH) and (PL),

To provide a projection exposure apparatus characterized by having an aberration measurement equipment according to claim 1, wherein for measuring the aberration of the projection optical system.

The present invention in a 1 1, wherein according to the illumination optical system for illuminating a mask (R) having a predetermined circuit pattern (1 to 1 0),

A stage (1 1) for supporting said mask,

An image of the illuminated the circuit pattern formed on the substrate the projection optical system and (PL),

And a wavefront aberration measurement apparatus according to claim 1, wherein for measuring the aberration of the projection optical system,

The stage or the mask to provide a projection exposure apparatus characterized by comprising a generating member for generating light for aberration measurement with respect to the projection optical system (PH).

Invention range 1 wherein the billing, the generating member, wherein said a pinhole pattern that converts light into a spherical wave from the illumination optical system (PH).

The present invention in a 1 3 wherein claims, wherein the generating member, characterized in that it is a transparent member that transmits and diffuses the light from the illumination optical system.

Invention range 1 4, wherein the billing, in the projection exposure optical system including a mask projection optical system for transferring an image of a circuit pattern formed on the (R) on the substrate (WH) (PL),

Aberration measuring optical system which emits light for aberration measurement in the projection optical system and (PH),

A plurality of lens elements for condensing the light for aberration measurement which has passed through the projection optical system (L '),

To provide a projection exposure apparatus, characterized in that it comprises condensing position detecting unit for detecting condensed been the position of the optical respectively and (DET) with the plurality of lens elements.

The present invention in a 1 5, wherein the billing, the aberration measurement optical system, the predetermined circuits pattern is at approximately the same level as mask formed (R), pinholes - aberration measurement with a Le pattern (PH) and use the mask, characterized in that it comprises an illumination optical system (1 to 1 0) for illuminating the mask for the aberration measurement. The present invention in a 1 6, wherein the billing, to have at least the position braking Gosuru controller of one optical member and the (LC) wherein the projection optical system based on the detection result from the light converging position detecting section the features.

Invention range 1 7, wherein the billing has a substrate stage portion (1 3) for holding the substrate, least also one of the plurality of lens elements and the focusing position detecting unit, the substrate stage portion that is provided detachably freely and feature.

The present invention in a 1 8 wherein the claims, there is provided a device manufacturing method comprising the step of transferring the substrate (WH) using projecting an image of a predetermined circuit pattern optical system (PL),

To provide a device manufacturing method which comprises a step of measure the aberration of the projection optical system by using an aberration measuring method according to claim 6, wherein. Invention range 1 9, wherein the claims, there is provided a device manufacturing method comprising the step of transferring to a substrate using a predetermined circuit pattern image projection optical system (PL), the aberration measurement method according to claim 8, wherein to provide a device manufacturing method which comprises a step of measure the aberration of the projection optical system used. The present invention in a 2 0 according claims provides an exposure method characterized by projection exposure onto the substrate a predetermined circuit pattern by the projection exposure apparatus in the range 1 1, wherein the billing.

The present invention in a 2 1, wherein the billing, in the exposure method of transferring the substrate (WH) using projecting an image of a predetermined circuit pattern optical system (PL),

Before transferring the circuit pattern on the substrate,

Incident light for aberration measurement in the projection optical system,

Light for aberration measurement which has passed through said projection optical system condenses to a plurality of lens elements (L '),

Said plurality of lens elements condensed been the position of the light detected respectively, based on the detected position of the light, to measure the aberration of the projection optical system, on the basis of the measured aberration, the projection optical to provide an exposure method and correcting the aberrations of the system.

The present invention in a 2 2, wherein the billing, the aberration is characterized in that said a wave front yield difference of the projection optical system.

The present invention in a 2 3 wherein claims, Oite exposure apparatus including a projection optical system for transferring an image of a pattern formed on a mask (R) on the substrate (WH) and (PL), according to claim 3 claims It characterized in that it comprises a holding mechanism for holding the aberration measuring device removably. Invention ranges 24 wherein, wherein said retaining mechanism includes a first holding member for holding the aberration measuring optical system (1 1),

It said plurality of lens elements, and having a second holding member for holding the measuring Yunitto (UT ') having the light converging position detecting section and the measuring section (1 2, 1 3).

The present invention in a 25 description of claims, the first holding member is a mask stage (1 1) which holds the mask,

The second holding member may be a substrate stage which holds the substrate (1 3).

The present invention in a 26 description of claims, the aberration measurement optical system is characterized by the Dearuko mask for measurements pinhole pattern for aberration measurement (ΡΗ) is formed (R).

The present invention in a 27 description of claims, the yield difference measuring device for measuring the aberrations of the mask projection optical system an image of a pattern formed on (R) is transferred onto the substrate (WH) (PL),

A mask stage for holding the mask (1 1), having said projection optical system and the measuring unit which is detachably attached to an exposure apparatus including a substrate stage (1 3) for holding the substrate (UT '),

The measurement Yunitto, the projection and the plurality of lens elements condensing light for aberration measurement which has passed through the optical system (L '), focusing position detection for detecting each position of the lens element in the light collected and part (DET), based on the detected position of the light in the light converging position detecting section, aberration measurement, characterized in that it comprises a measuring unit and a (PC) to measure the aberration of the projection optical system to provide a device.

The present invention in a 28 according claims has the projection optical aberration measurement optical system for out morphism light for aberration measurement system (PH), said measuring Yunitto is detachably held on the substrate stage, wherein aberration measuring optical system is characterized in that it is provided on the mask stage.

The present invention in a 2 9 wherein claims, in the aberration measuring method of the mask projection optical system in which the exposure apparatus is provided in which an image of a pattern formed on (R) is transferred onto the substrate (WH) (PL),

Substantially the same position as the mask, the aberration measurement optical system which emits light for aberration measurement in the projection optical system (PH) is arranged, on the substrate stage (1 3) for holding the substrate, the projection optical system and multiple lens elements condensing light for aberration measurement which has passed through the (L '), condensing position detecting unit for detecting, respectively Re its position of light collected by the lens element and (DET) , based on the position of the light converging position the light detected by the detection unit, the projection optical system measuring tough (PC) aberration measuring the the feature that mounting the measuring unit (UT ') comprise to provide an aberration measurement method to.

The present invention in a 30 according claims, after out morphism light for aberration measurement in the projection optical system, remove the aberration measuring optical system,

After measuring the aberration of the projection optical system, characterized in that removing the measurement Yuni' retrieved from the substrate stage.

The present invention in a 3 1, wherein the billing, in the exposure method of transferring the substrate (WH) using projecting an image of a predetermined circuit pattern optical system (PL), before transferring the circuit pattern on the substrate, wherein with range 2 9 aberration measuring method according to the, and measuring the aberration of the projection optical system.

The present invention in a 3 second aspect of claims, in a device manufacturing method comprising the step of transferring the substrate (WH) using projecting an image of a predetermined circuit pattern optical system (PL), transferring the circuit pattern on the substrate before using the aberration measuring method according to claim 2 9 claims, characterized in that it comprises a step of measuring the aberration of the projection optical system. BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram showing the arrangement of a projection exposure apparatus using the wavefront aberration measuring apparatus according to a first embodiment of the present invention.

Figure 2 is an enlarged view of the stage near the projection exposure apparatus shown in Figure 1. FIG. 3 is a diagram showing a configuration of a wavefront aberration measuring apparatus according to an embodiment of the present invention.

The 4 A diagram, 4 B Figure is a diagram showing a configuration of a modification of the wavefront aberration measuring apparatus according to an embodiment of the present invention.

The 5 A view, 5 B view, 5 C Figure is a diagram showing a state in which the position of the focal point P by measuring position changes.

6 is a conceptual diagram showing the relationship between the measured wavefront W and the wavefront slope W '. 7 is a diagram showing a configuration of a stage near neighbor of such projection exposure apparatus according to a second embodiment of the present invention.

8 is a diagram showing a configuration of a stage near neighbor of such a projection exposure apparatus in the third embodiment of the present invention.

9 is a diagram showing a configuration of a conventional wavefront aberration measuring apparatus. Embodiment

Describing the embodiments of the present invention based on the accompanying drawings.

(First Embodiment)

FIG. 1 is a diagram to be described later wavefront aberration measuring apparatus unit UT is showing a structure of a detachable projection exposure apparatus. The projection exposure apparatus, a semiconductor device circuit pattern is formed is created. An outline of the projection exposure apparatus. The light beam LB 0 from the laser light source 1 is by Ri beam shaping a beam shaping optical system 2, LB 1 that is substantially parallel laser beam, a fly-eye lens through the interference fringe reduction unit 4 to average the interference fringes incident on the 5. Interference fringe reduction unit is intended to improve the uniformity of illuminance on the reticle, the principle of JP 5 9 by the present applicant - 2 2 6 3 disclosed in 1 7 JP. The laser beam emerging from the fly's eye lens 5 IL 2 enters the field stop 8 via the first Rireren's 7 A. The cross-sectional shape of the laser beam IL 2 is shaped by the field stop 8. Field stop 8 is disposed on the exposure surface a position conjugate with the pattern-type Narumen and wafer WH of the reticle R. Laser beam IL 2 emitted from the aperture of the field stop 8, a second relay lens 7 B, Mira one 9, illuminates the reticle R on which a circuit pattern via a condenser lens 1 0 is formed (mask). The reticle R is placed on the stage 1 1, based on a command from the main control system 1 6, the reticle stage control unit 2 1 drives the reticle stage 1 1. The image of the pattern of the illuminated Rechiku le R is formed on a wafer WH which is a substrate by the projection optical system PL. By variously exchanging the reticle R, a semiconductor device is created by a variety of patterns are successively formed on the wafer WH. Wafer WH is vacuum chucking the wafer holder 1 2 on the wafer stage 1 3. Further, the wafer stage controller 2 2 drives and controls while tanning position-decided the stage 1 3 with high precision. Furthermore, the input-output device 2 4 is a man-machine interface of the projection exposure apparatus the body and operating evening. Figure 2 is an enlarged view of the stage near the present flood shadow exposure apparatus. The Interview knit UT wavefront aberration measuring device is placed over the wafer holder 1 2 on the stage 1 3. When placing the Interview Knitting bets UT on wafer holder 1 2, stage 1 3 in order to widen the distance between the projection lens PL and © E Hahoruda 1 2 - drive in the Z direction. Then, the unit UT (collimator Isseki lens CL of the units UT in this case) so as to face the projection lens PL, for driving the stage control unit 22 Death te temporary 1 3 X, in the Y direction. Note that by using a projection lens PL as where the target optical system that measure the wavefront aberration. Thus, while being opposed to Yuni' bets UT to the projection lens PL, performing wavefront yield difference measurement of the projection lens PL.

Figure 3 is a summary diagram showing a structure of a wavefront aberration measuring apparatus Yunitto UT according to a first embodiment of the present invention. The specific configuration of measuring the wavefront aberration of the projection lens PL by using the wavefront aberration measuring apparatus Yunitto UT of the present invention will be described. Incidentally, the wavefront aberration measuring unit UT is placed on © E Hahoruda 1 2 on the stage 1 3, as described above. When measuring the wavefront of the projection lens PL, as light for wavefront aberration measurement, wavefront Ru applying light having a spherical wave to the projection lens PL. Light of the spherical wave, the position where the reticle R is arranged (the object body surface of the projection optical character system), placing a mask with a pinhole pattern, by illuminating the mask with a laser beam IL 2, pinholes it is possible to occur from the pattern. The mask constitutes the optical aberration measurement system. In addition, instead of the pinhole pattern may be used a point light source. Separately it may be provided a force other sources and other illumination optical system uses the exposure light source in the present embodiment as a laser beam that illuminates the mask. Light of the spherical wave is incident projection lens PL, emitted from the projection lens PL. Light emitted from the projection lenses PL into parallel light by the collimator Isseki lens CL. Its to the the parallel light is condensed by the condenser lens L, to pass only part an aperture AP which an aperture stop is disposed behind the lens L. Some of the light beam passing through the aperture AP is focused as the focal point P on the imaging plane IP of the condensing position detector D ET such as a two-dimensional C CD. Collecting detection of point P is not limited to two-dimensional CCD, it is scanned using a one-dimensional CCD or rotating the primary source CCD,, more two-dimensional scanning using the light sensor alone that it may be detected by. Here, when there is aberration in the projection lens PL, as compared to when there is no aberration in the projection lens PL, the position of the focal point P is different. That is, for ideal focal point is not the aberration in the projection lens PL, laterally displaced position of the converging point on the CCD surface when there is aberration in the projection lens PL. The mobile unit M is maintained collimation Isseki lens CL, the mutual positional relationship of the condenser lens L and the focusing position detecting unit DET, to move the aperture AP to scan the measured wavefront whole. In such a case, Atsumarikore lens L, and preferably aperture AP and detector DET are housed in integral Yunitto UT. Further, the condensing position of the light transmitted through the projection lens PL, i.e. the imaging plane IP is a surface conjugate with the wafer WH. Further, the wavefront aberration measurement Yuni' Bok, mask pinhole pattern is formed also refers a structure including a point light source and a lens L and the focusing position detecting unit DET.

Thus, the moving unit M, a collimator lens CL, a condenser lens L, while maintaining the mutual relationship of the focusing position detector DET, by moving the aperture AP to scan the entire measured wavefront, throughout measured wavefront can be detected and ideal focal point is not the aberration in the projection lens PL, the lateral displacement on CCD surface with converging point at which there is aberration in the projection lens PL.

In the first embodiment, when condensing the central part of the wavefront (the light flux of the light axis AX vicinity) uses a central portion of the condenser lens L, and the peripheral portion of the measured wavefront (light flux near) when condensing uses a peripheral portion of the condenser lens L. Thus, the portion using a condensing lens L is different in the case having the lens L Scheme 13 difference, there is a risk that the aberration will affect the measurement result. Therefore, in order to reduce the influence of the aberration of the condenser lens L, and then the condenser lens, while maintaining the mutual positional relationship between the aperture AP, collimation Isseki lens CL, moves the detection unit DET it is preferable. However, as Atsumarikore lens L, it is more preferable to use a small-diameter lens L that is focused part of the light flux measured wavefront as shown in 4 A view. Such is the case of using the small-diameter lens L, it is moved by the moving unit M of the lens L so as to scan the entire measured wavefront.

In Figure 4B, a modification of FIG. 4A, unit UT lens housed in L, while the aperture AP and the detector DET is maintained the positional relationship between each other, a configuration to scan the entire measured wavefront is there. Lens L, the aperture AP and the detector DET, the measurement system S is configured and measuring system S is moved by the moving unit M in Yuni' preparative UT. In this configuration, the detection unit DET of Figure 4A, can be miniaturized.

Next, the procedure will be described for calculating the aberration of the optical system to be measured based on an output signal from the focusing position detecting unit DET. As wavefront aberration measuring measuring device, it will be described using the configuration shown in 4 B FIG. The 5 A, 5 B, 5 C diagram, any measured wavefront of triplicate results in the area, i.e. each in the case of moving the measuring system S 3-point detector DET Ueno condensing point of P It shows a state of change. Here, it is the plane of the imaging surface IP X- Y plane. If measured wavefront ideal wavefront, i.e. aberration-free wavefront (spherical wave), the focal point P may move anywhere within the measured wavefront measurement system S is centered 〇 of detector DET. However, the actual measured wavefront has aberrations, i.e. the deviation from the ideal wavefront (the difference between the wavefront slope). Accordingly, as shown in 5A, 5 B, 5 C diagram, with each focal point, appears as a change in the position of the focal point P on the deviation detection unit DET at that point (lateral displacement). Since the position deviation from the center of the focal point P corresponds to the derivative information of the wavefront at the measurement point, the entire measured wavefront values ​​obtained from the positional deviation of the focal point P at each measuring point for each mobile if sequentially integrating the aberration of the optical system to be measured can be calculated. The concept of such a calculation procedure shown in Figure 6. Figure 6 is in the arrow direction, that shows how the successively moving the measuring system S, is performed one after another measured at each shift point. It can be calculated the measured wavefront W by integrating with the wavefront W 'inclination sequential processing unit PC the amount Re without converging point P by the at each measurement point as described above, the aberration of the optical system to be measured it can be obtained.

Using the configuration of a 4 A diagram, when measuring the aberration of the test optical system sets a plurality of imaging 頜域 on the imaging plane IP, for each imaging region, more lens moving portion M L and positioning the aperture AP. With respect to the center of the imaging region measured wavefront is to the lens L is converged at the ideal wavefront, the actual measured wavefront, the change in position of the focal point of the lens L is condensed is detected. By detecting the amount of change in position, it is possible to measure the aberration. The calculation of the wave front W is the same as the contents described above.

Thus, among the imaging plane of the projection lens PL, at one point, by Rukoto to measure the displacement of each focal point of the wavefront for each focal point of the ideal wavefront, the projection lens PL as an aberration, a spherical aberration and astigmatism can determined Mel possible.

Further, Yunitto UT drives the stage 1 3 stage controller 2 2 so that move to multiple points of the imaging plane of the projection lens PL. Then, in each of the plurality of points on the imaging plane of the projection lens PL, the lens L and the aperture AP in the unit UT, or measuring system S controls the moving unit M to 査 run the entire measured wavefront. Thus, in each of the plurality of points which definitive imaging plane, it is possible to measure the displacement of each focal point of the wavefront for each focal point of the ideal wavefront, the aberrations of the projection lens PL, coma, field curvature, distortion, Ru can be obtained astigmatism.

In the above first embodiment, collimator to collimate light measured wavefront - but incorporate evening lens CL to Yuni' Bok UT, it is provided in a different unit from the unit UT collimation Isseki lens CL good. Furthermore, co Increment Isseki without using a lens CL, may of course be measured in intact this apparatus the light of the spherical waves transmitted through the optical system PL.

Thus, the location placing the Yuni' bets UT on wafer holder 1 2 Stage 1 3, the lens L and the aperture AP in the unit UT, or by driving the moving unit M measuring system S, conveniently projection lens PL wavefront aberration of can be measured. After measuring the wavefront aberration of the projection lens PL, with detached aberration measuring optical science system (measurement mask) from the stage, removing the unit UT from Stage 1 3. By removing the unit UT from Stage 1 3, the stage 1 3 when used during exposure is lightweight. Further, on the projection exposure apparatus, apparatus is made a smaller size so can be measured using an exposure light source. Furthermore, without the need for spatial location as compared to the case of measuring by using another interferometer, also possible to measure the aberration with high accuracy because of the use of single lens as the lens. In addition, in a state equipped with the wavefront aberration measured Yuni' DOO on the stage 1 3 of the projection exposure apparatus, it is possible to adjust the projection lens PL on the basis of the measurement results. At this time, when combined with the automatic lens adjustment hand stage, etc., the measurement result of the wavefront aberration is fed back to the automatic lens adjustment means or the like, it is possible to adjust the lens distance. Automatic lens adjusting means, depending on the aberration, by slightly moved in the optical axis direction at least one lens element constituting the projection lens PL, and the moving mechanism to change the distance between the lens element, between the lens elements of the pressure adjusting mechanism for adjusting the pressure of the air and the like. Thus, automatically come wavefront aberration of the projection optical system in a modified, thereby improving the imaging characteristic.

(Second Embodiment)

7 is a diagram illustrating a schematic configuration of a stage near the projection exposure apparatus according to a second embodiment. In the present embodiment, the configuration and the same part of such a projection exposure apparatus in the first embodiment are denoted by the same reference numerals, also block diagram of a part component that overlaps the description thereof will be omitted.

In the first embodiment, in the exposure apparatus the wavefront aberration measurement of the projection lens PL, can be performed using an exposure light source. In this case, it is desirable to use a reticle for projection lens aberration measurement with a point source at the position of the reticle R, i.e. a pinhole. Therefore, the laser beam IL 2 from the exposure light source will and this is converted into the light composed of spherical wave by the pinhole reticle R. Here, to reduce the pinhole diameter in order to improve the measurement accuracy of the wavefront aberration of the projection lens PL, may be brought closer to a spherical wave generated by pinholes ideal spherical wave, but the pin hole diameter is small and the amount of transmitted light There was decreased, it takes measurement time to reduce the contrast in the imaging plane. Also, using a projection lens aberration measurement reticle having a pinhole when performing measurement of the wavefront aberration of the projection lens, when performing normal pattern exposure by using the reticle for exposure, each aberration measurement or pattern exposure in exchange placed the reticle Rechiku Le stage, which may cause a reduction in throughput Bok it is necessary to align the like.

Projection exposure apparatus of this embodiment, which was conceived in view of the above problems, the reticle stage 1 1, for example, as shown in FIG. 7 has a pin hole PH of the projection lens wavefront aberration measuring titration,.

Its description will procedure of manufacturing a semiconductor device using the reticle R on which a circuit pattern is formed is the same as the procedure described in the first embodiment is omitted. Next, it describes a procedure for measuring the wavefront aberration of the projection lens PL. When measuring the wavefront aberration of the projection lens PL is a reticle stage control unit 2 1 drives the reticle stage 1 1 of the state of mounting the reticle R formed circuit pattern, the pinhole PH to the optical axis AX move up, perform aberration measurement light from the pinhole as a point light source. First, Yunitto UT wavefront aberration measuring device (configuration of Yuni' I as defined above embodiment) is mounted via a wafer holder 1 2 on the stage 1 3. Next, Interview two Tsu lens L and the aperture AP in preparative UT, or measuring system as S scans the entire measured wavefront from the condenser lens L, the moving portion M is the lens L and Aba one Chiya AP, or to drive the measuring system S. Obtains the displacement of the light collecting point of the measured wavefront, as described above, will the integration operation as described above in the processing unit PC row. Here, the condensing position of the light transmitted through the projection lens PL is a wafer WH surface conjugate. Then, the wavefront aberration information of the projection lens PL obtained (frame yield difference, astigmatism, spherical aberration, etc.) to feed back to the lens control unit LC. The lens control unit LC is wavefront aberration interval and the respective lens elements that make up the projection lens PL on the basis of the information, aberration predetermined range of the wavefront transmitted through the projection lens PL by adjusting the pressure of air in the interval keep within. Incidentally, Interview two Tsu DOO UT is wafer holder 1 2 or stage 1 3 may be provided freely directly detachably on, or structure that is built into the stage 1 3, are the al side of the stage 1 3 it may be configured to detachably provided to. Further, in this embodiment uses the light that has passed through the pinhole provided in a reticle stage as a light source is not limited thereto, and transmits and diffuses the light from the light source 1 to retinyl cycle stage area , the area that is formed in a so-called Les Monsukin state provided, the light transmitted through the lemon skin region may be used as a light source for wavefront aberration measurement. Lemon Skin 頜域 has a function of diffusing the transmitted light as with ground glass diffuser, light transmitted through this region, a large number of spherical wave or Ranaru substantially emitted from a plurality of point light sources it can be regarded as parallel light. Further, pinholes or Remonsu Kin region is not limited to the case provided in the reticle stage, it may be provided in the first implementation embodiment and similar reticle. As described above, decreasing the pinhole diameter, the measurement time for passing light quantity decreases the longer, it is possible to increase the measurement accuracy. Conversely, increasing the pinhole diameter, the shape of a spherical wave generated by the pinhole becomes low measurement accuracy will be away from the ideal spherical wave, the measuring time since the amount of transmitted light is increased can be shortened. Therefore, previously formed a pinhole of the plurality of size on the reticle stage 1 1 or reticle R, it is desirable to alternatively selected and used by the constant precision measurement of interest. For example, the projection when setting is already completed circuit pattern exposure that have been sequentially performed for the EXPOSURE APPARATUS, aging, such as optical properties of the projection lens (variation in imaging characteristics and transparently constant such as magnification, focal position) because be measured is the main purpose, a suitable accuracy when the light projection lenses predetermined number of times is transmitted, and a short time it is desirable to perform the wavefront measurement. Further, when the exchanging at least one lens element that make up the projection lens or projection lenses other lenses, such as the case of changing the light source wavelength, Mashi Nozomu be performed with high accuracy wavefront measurement over time There. Thus, by forming a pinhole of the plurality of size, it can be readily selected pinholes optimum size for each purpose. Also, although the present embodiment uses the exposure light source as LES one Zabimu that illuminates the reticle stage, it may also be separately provided other light sources and other illuminating optical system Le ^

(Third Embodiment)

8 is a diagram showing a schematic configuration of a stage near such a projection exposure apparatus in the third embodiment. In the present embodiment, the configuration and the same part of such a projection exposure apparatus in the first embodiment are denoted by the same reference numerals, also diagram of overlapping portions and description thereof will be omitted.

Its description will procedure of manufacturing a semiconductor device using the reticle R on which a circuit pattern is formed is the same as the procedure described in the first embodiment is omitted. Next, a procedure for wavefront aberration measurement of the projection lens PL. Wafer stage controller 2 2, as transmitted wavefront of the projection lens P only et stage 1 3 sides to be via the detachable mechanism D detachably provided aberration measuring Yuni' preparative UT 'is incident, the wafer stage 1 3 controls drive. Aberration measuring unit UT 'includes a plurality of lens elements L for condensing light consisting of a spherical wave generated by the pinhole PH which has passed through the projection optical system PL' and two-dimensional lens array having an array of two-dimensionally, a plurality is composed of a lens element L 'condensed it has been the position of the light from the focusing position detecting unit DET for detecting respectively. Further, the above wavefront aberration measurement Yuni' preparative like the first embodiment, the mask pinhole PH and patterns are formed and two-dimensional lens array L 'and refers to a structure comprising a focusing position detecting unit DET.

The present invention is not limited to the pinhole as described in the above embodiment, the reticle stage 1 1 or reticle scale is preferably has a have displacement or other of the pin holes and lemon skin area. More preferably, provided with a plurality of pinholes of different sizes, it is desirable to be able to select an appropriate pin holes according to the second embodiment similarly to the measurement object. Thus, stearyl temporarily or reticle having either the pinhole and lemon skin 頜域 constitutes an aberration measuring optical system.

Light transmitted through the projection optical system PL is converted into parallel light by collimator Isseki lens CL. Then, is incident on the two-dimensional lens Zuarei having an array of microlenses L 'in two dimensions. Measured wavefront ideal wavefront of the incident light, i.e. projecting the shadow lens aberration has a deviation from the wavefront of the absence, the deviation is ideal wavefront converging position detecting section DET on the current condensing positions of the measured wavefront to the optical position appears as a position deviation. Processing unit PC, based on the positional deviation of the focal point of each lens L 'of the two-dimensional lens array, and calculates the wavefront aberration of the projection lens PL. Thus, among the imaging plane of the projection lens PL, at one point, by a child measuring the displacement of each measurement point in the measured wavefront for each focal point of the ideal wavefront, as the aberration of the projection lens PL, it is possible to obtain the spherical aberration and astigmatism. Furthermore, to drive the stage 1 3 stage controller 2 2 As the unit UT moves to multi-point of the imaging plane of the projection lens PL. Then, in each of the plurality of points in the image plane of the projection lens PL, to measure the positional deviation of each measurement point in the measured wavefront for each focal point of the ideal wavefront, which from the measurement result, the aberration of the projection lens PL as, coma, field curvature, distortion, it is possible to obtain the astigmatism.

The coma resulting projection lens PL, field curvature, Dist one Chillon, feedback wavefront aberration information such as astigmatism to the lens control unit LC Kusuru. The lens control unit LC is predetermined intervals and the respective lens elements constituting the projection lens PL on the basis of the wavefront aberration information, the aberration of a wavefront transmitted through the projection lens PL by Rukoto adjusting the pressure of air in the interval suppressed within range. Incidentally, the unit UT 'may be provided in the detachable self standing on the wafer holder 1 2 or stage 1 3, or configuration incorporated in the stage 1 3, be configured to further provided on the stage 1 near 3 good.

In each of the above embodiments, the measurement resolution of the focusing position detecting unit DET, by increasing the accuracy of position control of the mobile unit M or the wafer stage 1 3, it is possible to improve the aberration measurement precision of the projection lens PL . For example, when the detection resolution of the focusing position detecting unit is 1 0 to 2 0 / xm, in a projection exposure apparatus that exposes a region of 5 mm X 5 mm is sufficient to control the wafer stage 1 3 1 mm pitch is there.

Further, in the first embodiment, it may be the opening area of ​​the aperture AP variable. At this time, it focused the opening, measurement accuracy is higher than improved resolution. Each embodiment can be combined as needed. In each of the embodiments has been detachably attached to a wavefront aberration measuring device in Stage 1 3, the this detaching mechanism is provided with notches on the stage 1 3, engaging portion engaged with the notch the may be detachably provided in the measuring device. Furthermore, measuring the time of detachable constant device to the stage 1 3, part of that instead of the entire measuring device, for example, a collimator lens CL, a detachable lens L, to fix the detector DET in Stage 1 3 it may be. Further, Conversely, by applying for example collimator one evening lens CL, the lens L is fixed to the stage 1 3, may be detachable detector DET.

In each of the embodiments has been measured wavefront aberration of the projection lens PL by incorporating state in the exposure apparatus may be measured prior to incorporation into the exposure apparatus. The timing of measuring the wavefront aberration, each wafer replacement, each reticle exchange, or may be any predetermined time every previously set may be a timing other than the above. Ru as Der described above can be selected the measurement accuracy of time. In the respective embodiments, as the light source for measuring the aberrations, but using an exposure light source, it may use other light sources. The exposure light source, g line (43 6 nm), i-ray (365 nm), K r F excimer one The (248 nm), A r F excimer laser (1 93 nm), 2, single-THE (1 5 7 nm) and may be used harmonics of metals vapor laser and Y AG laser.

As the exposure device of the present embodiment, the scanning type exposure apparatus for exposing a pattern of a mask by synchronously moving the mask and the substrate (USP 5, 473, 4 10), or the mask and the substrate and while stationary the pattern of the mask is exposed to light, it can be applied to an exposure apparatus of the step 'and' repeat type that moves sequentially steps the substrate. Without being limited to the exposure apparatus for manufacturing semiconductor use of the exposure apparatus, for example, exposure apparatus for liquid crystal which exposes a liquid crystal display device pattern onto a glass play Bok prismatic, to produce a thin-film magnetic head It can be widely suitable to the exposure apparatus for.

Magnification of the projection lens as the optical system to be measured can be either equal magnification and enlargement system of not only a reduction system. The projection lens, when using a far ultraviolet rays such as excimer one The use of a material which transmits far ultraviolet rays such as quartz and fluorite as glass material, a catadioptric or refractive system when using a F 2 laser or X-ray it may be the optical system (reticle also used as a reflective type). Excimer One The case of using the far ultraviolet purges the optical path with inert gas between the light source and the substrate. Thus, when using a far ultraviolet is Yuni' in Bok UT wavefront aberration measuring apparatus of the present embodiment also may be purged with an inert gas. As the inert gas, helium, neon, argon, krypton, xenon, may be used an inert gas such as radon. Wavelength wavelength of the exposing light is not absorbed by oxygen (e.g., i-ray and K r F, etc.) if the cause of the chemically clean dry air (lens clouding material, For example, ammonia which floats in a clean room Umuion etc. E § removed, or humidity may be used air) of less than 5%.

As described above, the exposure apparatus and the aberration measuring apparatus of the present embodiment, the various subsystems, including each constituent element recited in the scope of the present application billed (cla ims) (el emen t), predetermined mechanical accuracy, electrical accuracy, so as to maintain the optical accuracy are manufactured by assembling. To ensure these respective precisions, performed before and after the assembling include the adjustment for achieving the optical accuracy for various optical systems, an adjustment to achieve mechanical accuracy for various mechanical systems, the various electrical systems adjustment for achieving the electrical accuracy is performed. The steps of assembling the various subsystems into the exposure apparatus includes various subsystems, the mechanical interconnection, electrical circuit wiring connections, and the piping connection of the air pressure circuit. Before the process of assembling the exposure apparatus from the various subsystems, there are also the respective subsystem individual assembly steps. After various subsystems of the assembly process is completed to the exposure So匱, overall adjustment is performed, the various accuracies as the entire exposure light device is ensured. The manufacture of the exposure apparatus has to desired be carried out in a clean room which is managed temperature and cleanness. The semiconductor device Sutetsu flops perform functions' performance design of the device, the step of producing a reticle based on the design step, the step of producing a wafer from the silicon down material, reticle Ri by the exposure apparatus of the above-described embodiment exposing a pattern on a wafer, a device assembly step (dicing, bonding, including packaging step) and an inspection step or the like. Industrial Applicability

As described above, in the invention according to claim 1, wherein has a focusing position detecting unit for detecting the displacement of a portion of the converging position of the light beam passed through the aperture stop that put onto a predetermined surface, an opening It is moved in a direction to intersect the aperture with the optical axis. Therefore, even without using an interferometer or a two-dimensional lens array, it is possible to measure the aberration of the optical system to be measured with high accuracy in a simple and convenient configuration compact.

In the invention according to claim 2, wherein the condensing lens is condensed and a portion of the light beam, the moving unit is moving the aperture stop and the focusing lens in the direction intersecting the optical axis of the light beam as an integral . Therefore, the condenser lens is easy because production was good in a small lens, cost cheaper. Furthermore, always so condensed light using the entire surface of the compact condenser lens, it can be reduced measurement error due to the influence of the aberration of the condenser lens itself.

In the present invention in a third aspect according to the wavefront aberration of a lens used for flood shadow exposure apparatus for manufacturing semiconductor devices or the like can be easily measured.

In the present invention in a fourth aspect of claims it can be performed accurately and quickly aberration measured with a spherical surface wave transmitted through the pinhole pattern. In the present invention in a fifth aspect according to the light from the illumination optical system for illuminating a reticle having a predetermined circuit pattern may be used.

In the invention according to claim 6, wherein, without using an interferometer or a two-dimensional lens array, it is possible to measure the aberration of the optical system to be measured with high accuracy in compact and simple structure. In the present invention in a seventh aspect according to the condensing lens is easy to manufacture since it is compact lenses, it costs cheaper. Furthermore, always so condensed light using the entire surface of the compact condenser lens, it can be reduced systematic error measurement due to the influence of the aberration of the condenser lens itself.

In the invention according to claim 8, wherein, may conveniently measured wavefront aberration of the projection optical system used for projecting the shadow exposure apparatus for manufacturing a semiconductor device or the like. In the present invention in a ninth aspect of claims it can be performed accurately and quickly aberration measured with a spherical surface wave transmitted through the pinhole pattern.

In the present invention in a 1 0 described claims, the image of a predetermined circuit pattern of the aberration of the projection optical system for forming on a substrate, without having such using an interferometer or a two-dimensional lens array, a compact with a simple structure the aberration of the optical system can be measured with high accuracy. In the present invention in a 1 1, wherein the billing by using the generating member for generating light for aberration measurement, leaving in it to perform aberration measurements accurately and quickly projection optical system.

In the present invention in a 1 2 wherein the claim, more spherical wave that has passed through the pinhole, it is possible to perform the aberration measurements accurately and quickly projection optical system.

In the present invention in a 1 3 wherein claims, the substantially parallel light composed of transparent member from spreading to transmitted multi number has a spherical wave, it is possible to perform the aberration measurements accurately and quickly projection optical system.

In the present invention in a 1 4, wherein according to the wavefront aberration of the projection optical system used in a projection exposure apparatus for manufacturing semiconductor devices or the like can be easily measured. In the present invention in a 1 5, wherein according to a spherical wave having passed through the pinhole pattern can be performed accurately and quickly aberration measured using.

In the present invention in a 1 6, wherein the billing, based on the aberration measurement results, such as by adjusting the lens interval more projection optical system to the control unit, to correct the wavefront aberration of the projection optical system, improved imaging characteristics it can be.

In the present invention in a 1 7 wherein the billing, the projection exposure apparatus, for example in the Wehasute chromatography di on only installing a wavefront aberration measuring apparatus can easily measure the aberration of the projection optical system. Moreover, it can be directly device also downsizing since it uses the light source of the exposure device.

In the present invention in a 1 8 wherein claims, or without use of an interferometer or two-dimensional lens array, Runode can measure the aberration of the projection optical system with high accuracy in compact and simple structure, thereby improving the imaging performance it can be, it leaves the manufacturing of high-resolution devices.

In the present invention in a 1 9 according claims than the wavefront aberration of the projection optical system used in a projection exposure apparatus for manufacturing semiconductor devices or the like can be easily measured, it is possible to improve the imaging performance, high-resolution It can be produced an image device. In the present invention in a 2 0 according claims, by using a generating member for generating light for aberration measurement, since cut with be performed aberration measurements accurately and quickly projection optical system, the exposure throughput Bok has improved It can be carried out.

In the present invention in a 2 1 wherein according conveniently measure the aberration of the projection optical system, it is possible to correct the aberration of the projection optical system based on the measurement result, it can provide a good have exposure method of the imaging performance.

In the present invention in a 2 2 wherein according conveniently measure the wavefront aberration of the projection optical system, it is possible to correct the wavefront aberration of the projection optical system based on the measurement result, can provide a better exposure method of imaging performance.

In the present invention in a 2 3 according claims, it is possible to detachably hold the aberration measuring apparatus in an exposure apparatus for manufacturing semiconductor devices or the like, be attached only at the time of the aberration measurement, or is easy to replace the aberration measuring device is there.

In the present invention in a 2 4 according claims, it can be easily detached and measurement Yuni' Bok aberration measuring optical system with respect to the exposure apparatus.

In the present invention in a 2 5, wherein according to the mask to the mask stage, can be easily detached measurement Yuni' fed versus the substrate stage.

In the present invention in a 2 6 described claims, since a mask having a pinhole pattern can be easily detachable, can easily select an appropriate pinhole diameter aberration measurement.

In the present invention in a 2 7, wherein the billing, the projection exposure apparatus, for example in the Wehasute chromatography di on only installing a wavefront aberration measuring apparatus can easily measure the aberration of the projection optical system. Moreover, it can be miniaturized aberration measurement device because the light source of the exposure device can be used as it.

In the present invention in a 2 8 according claims, by light from the aberration measuring Teikogaku system provided on the mask stage, it is possible to perform the aberration measurements accurately and quickly projection optical system. Moreover, it easily detachable measuring unit with respect to the substrate stage.

In the present invention in a 2 9 according claims using light from the aberration measurement optical system, only attaching the measurement Yunitto the wafer stage of the projection exposure apparatus, it can measure the aberration of the projection optical system simple and convenient. Moreover, it can be directly device also downsizing since it uses the light source of the exposure device.

In the present invention in a 3 0 according claims, by removing the measurement unit, it is possible to reduce the weight of the board stage.

In the present invention in a 3 1, wherein the billing, since the aberration measurement of the projection optical science system prior to transferring the circuit pattern, it is possible to perform accurate pattern transfer. In the present invention in a 3 second aspect of claims since the aberration measurement of the projection optical science system prior to transferring the circuit pattern can be accurately manufactured with high precision device.

Claims

The scope of the claims
1. A condenser lens for converging a light beam onto a predetermined surface that has passed through the target optical system, an aperture stop for passing a portion of said light beam,
The moving unit that moves in a direction intersecting the optical axis of the aperture stop the light beam and the light condensing position detector for detecting a positional deviation of a part of the condensing positions of the light beam passing through the aperture stop on the predetermined surface When,
An arithmetic processing unit for calculating the aberration of the target optical system based on an output signal from the focusing position detecting unit,
Aberration measuring apparatus characterized by having a.
2. The condenser lens is a part of the light beam is condensed, wherein the mobile unit is characterized in that moving in a direction intersecting the optical axis of the light beam and the aperture stop and the condensing lens as an integral aberration measuring apparatus according to claim 1, wherein.
3. The image of a predetermined circuit pattern formed on a mask in the aberration measuring apparatus for measuring aberrations of the projection projection optical system for transferring onto a substrate,
An aberration measurement optical system which emits light for aberration measurement in the projection optical system, a plurality of lenses element for condensing light for aberration measurement which has passed through the projection optical system,
A condensing position detecting unit for detecting condensed been the position of the light respectively by the plurality of lens elements,
Based on the detected position of the light in the light converging position detecting section, the aberration measurement instrumentation, characterized in that it comprises a measuring unit for measuring the aberration of the projection optical system
4. The aberration measuring optical system, said predetermined circuit pattern is placed at substantially the same position as the mask formed, a mask for aberration measurement with a pinhole pattern, illumination optics for illuminating the aberration measurement mask aberration measuring apparatus according to claim 3, wherein, characterized in that it comprises a system.
5. The illumination optical system is aberration measuring apparatus according to claim 4, wherein, wherein an illumination optical system for illuminating the predetermined circuit pattern.
6. And Ru condensing step is condensed onto a predetermined surface by a condenser lens the light flux passing through the target optical system,
A step of passing through the aperture stop a part of the light beam,
A moving step of moving the aperture stop in the direction intersecting the optical axis of the light beam,
Some of the condenser and the condensing position detection step of detecting a positional deviation by a focusing position detecting unit of the position, an output signal obtained by the light converging position detecting process of the optical beam passing through the aperture stop on the predetermined surface an arithmetic processing step of calculating the aberration of the target optical system based on,
Aberration measuring method characterized by comprising the.
7. The portion of the light beam by the condensing step is condensed, wherein said at moving step is to move the diaphragm the before and Symbol condensing lens opening in a direction intersecting the optical axis of the light beam as an integral aberration measuring method according to claim 6, wherein to
In 8. Aberration measuring method an image of a predetermined circuit pattern formed on the mask to measure the aberration of the projection projection optical system for forming on a substrate,
Light for aberration measurement which has passed through said projection optical system condenses to a plurality of lens elements,
Said plurality of lens elements condensed been the position of the light detected respectively, detected on the basis of the position of the light, the aberration measuring method characterized that you measure the aberration of the projection optical system.
9. Light for aberration measurement according to claim 8 claims, wherein the mask is a light from the pinhole pattern on the mask substantially dispositions aberrations measurement at the same position from a position located aberration measuring method.
1 0. An illumination optical system for illuminating a predetermined circuit pattern,
A projection optical system an image of the illuminated the circuit pattern formed on a substrate, the projection exposure, characterized by having an aberration measuring apparatus according to claim 1, wherein for measuring the aberration of the projection optical system apparatus.
1 1. An illumination optical system for illuminating a mask having a predetermined circuit pattern, a stage for supporting the mask,
An image of the illuminated said circuit pattern has a projection optical system for forming on a substrate, and a wavefront aberration measuring apparatus according to claim 1, wherein for measuring the aberration of the projection optical system,
Projection exposure apparatus the stage or the mask, characterized in that it comprises a generating member for generating light for aberration measurement with respect to the projection optical system.
1 2. The generating member, the projection according to the range 1 1 claims, characterized in that a pin hole pattern to convert the light from the illumination optical system into spherical wave
1 3. The generation member is a projection exposure apparatus according to claim 1 1, wherein, characterized in that a transmission member which transmits and diffuses the light from the illumination optical system
In 1 4. Projection exposure apparatus and a projection optical science system be transferred onto the substrate an image of the circuit pattern formed on a mask,
An aberration measurement optical system which emits light for aberration measurement in the projection optical system, a plurality of lens elements for condensing the light for aberration measurement which has passed through the projection optical system,
Projection exposure apparatus, characterized in that it comprises a condensing position detector for detecting the plurality of lens elements condensed been the position of the optical respectively.
1 5. The aberration measuring optical system, said predetermined circuit pattern is placed at substantially the same position as the mask formed, and the aberration measurement mask having a pinhole pattern, illumination optics for illuminating the aberration measurement mask the projection exposure apparatus according to claim 1 4 claims, characterized in that it comprises a system.
1 6. In the range 1 4 claims, characterized that you and a control unit for controlling the position of at least one of optical members constituting the projection optical system based on the detection result from the light converging position detecting section projection exposure apparatus as claimed.
Has 1 7. Substrate stage part for holding said substrate, at least one of said plurality of lenses element and the light converging position detecting section, and being provided detachably on the substrate stage portion the projection exposure apparatus according to claim 1 4 wherein the.
1 8. A device manufacturing method comprising the more E to be transferred to the substrate using a predetermined circuit pattern image projection optical system,
A device manufacturing method which comprises a step of measuring the aberration of the projection optical system by using an aberration measuring method according to claim 6, wherein.
1 9. A device manufacturing method comprising the more E to be transferred to the substrate using a predetermined circuit pattern image projection optical system,
A device manufacturing method which comprises a step of measuring the aberration of the projection optical system by using an aberration measuring method according to claim 8 of the claims.
2 0. Exposure method characterized by projection exposure onto the substrate by projection exposure apparatus according to the predetermined circuit pattern in the range 1 1 claims.
In EXPOSURE method of transferring a substrate using the 2 1. Predefined circuit pattern image projection optical system,
Before transferring the circuit pattern on the substrate,
Incident light for aberration measurement in the projection optical system,
Light for aberration measurement which has passed through said projection optical system condenses to a plurality of lens elements,
Said plurality of lens elements condensed been the position of the light detected respectively, based on the detected position of the light, to measure the aberration of the projection optical system, on the basis of the measured aberration, the projection optical exposure method and correcting the aberrations of the system.
2 2. The aberrations The exposure method according to claim 2 1, wherein which is a wavefront aberration of the projection optical system.
2 3. In the exposure apparatus including a projection optical system for an image of a pattern formed on a mask is transferred onto a substrate, and further comprising a holding mechanism for detachably holding the aberration measuring apparatus according to claim 3, wherein exposure apparatus that.
2 4. The holding mechanism includes a first holding member for holding the aberration measuring optical system,
Said plurality of lens elements, the focusing position detecting unit and an exposure apparatus according to billed range 2 to 3, characterized in that a second holding member for holding the measuring Yuni' bets with the measuring unit.
2 5. The first holding member is a mask stage for holding the mask,
The second holding member, an exposure apparatus according to claim 2 4 claims, characterized in that a substrate stage which holds the substrate.
2 6. The aberration measuring optical system, exposure light device according to claim 2 4 claims, characterized in that a measurement mask pinhole pattern is formed for aberration measurement.
In 2 7. Aberration measuring device in which an image of the pattern formed on the mask to measure the aberration of the projection optical system for transferring onto a substrate,
A mask stage for holding the mask, a measuring Yunitto provided detachably on the exposure apparatus comprising a substrate stage which holds the projection optical system and said substrate,
The measurement Yuni' DOO, said projection and a plurality of lens elements for focusing light for aberration measurement which has passed through the optical system, the lens element in the condensed been focusing position detection that its Re respectively detecting the position of the optical parts and, on the basis of the position before Symbol light detected by said light converging position detecting section, the aberration measuring apparatus characterized by obtaining Bei a measuring unit for measuring the aberration of the projection optical system.
2 8. Have a aberration measurement optical system which emits light for aberration measurement in the projection optical system,
The measurement Yuni' DOO is detachably held on the substrate stage, wherein the aberration measuring optical system is aberration measuring apparatus according to claim 2 7 claims, characterized in that provided in the mask stage.
In 2 9. Aberration measuring method of the projection optical system in which the exposure apparatus is provided in which an image of a pattern formed on a mask is transferred onto a substrate,
Substantially the same position as the mask, to place the aberration measurement optical system which emits light for aberration measurement in the projection optical system, a substrate stage which holds the substrate, before Symbol for aberration measurement which has passed through the projection optical system a plurality of lens elements for collecting light, and a condensing position detector for detecting light collected was the position of the light respectively by the lens elements, on the basis of the position of the focusing position detected by the detection unit the said optical aberration measuring method comprising installing an additional measurement Yuni' bets and a measuring unit for measuring the aberration of the projection optical system.
3 0. After emitting light for aberration measurement in the projection optical system, remove the aberration measuring optical system,
After measuring the aberration of the projection optical system, aberration measuring method according to claim 2 9 claims, characterized in that removing the measurement Yuni' retrieved from the substrate stage.
In 3 1. EXPOSURE method of transferring a substrate to an image of a predetermined circuit pattern by using the projection optical system,
Before transferring the circuit pattern on the substrate, by using an aberration measuring method according to claim 2 9 claims, exposure method and measuring the aberration of the projection optical system.
In 3 2. A device manufacturing method comprising the more E for transferring the substrate to an image of a predetermined circuit pattern by using the projection optical system,
Before transferring the circuit pattern on the substrate, by using an aberration measuring method according to claim 2 9 claims, device manufacturing method characterized by comprising the step of measuring the aberration of the projection optical system.
PCT/JP1999/002608 1998-05-19 1999-05-19 Aberration measuring instrument and measuring method, projection exposure apparatus provided with the instrument and device-manufacturing method using the measuring method, and exposure method WO1999060361A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP10/153915 1998-05-19
JP15391598 1998-05-19

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
EP99921174A EP1079223A4 (en) 1998-05-19 1999-05-19 Aberration measuring instrument and measuring method, projection exposure apparatus provided with the instrument and device-manufacturing method using the measuring method, and exposure method
AU38491/99A AU3849199A (en) 1998-05-19 1999-05-19 Aberration measuring instrument and measuring method, projection exposure apparatus provided with the instrument and device-manufacturing method using the measuring method, and exposure method
JP2000549927A JP4505989B2 (en) 1998-05-19 1999-05-19 Device manufacturing method using the projection exposure apparatus and method comprising an aberration measuring apparatus and method and the apparatus, exposure method
US09/714,183 US6819414B1 (en) 1998-05-19 2000-11-17 Aberration measuring apparatus, aberration measuring method, projection exposure apparatus having the same measuring apparatus, device manufacturing method using the same measuring method, and exposure method

Publications (1)

Publication Number Publication Date
WO1999060361A1 true WO1999060361A1 (en) 1999-11-25

Family

ID=15572891

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP1999/002608 WO1999060361A1 (en) 1998-05-19 1999-05-19 Aberration measuring instrument and measuring method, projection exposure apparatus provided with the instrument and device-manufacturing method using the measuring method, and exposure method

Country Status (4)

Country Link
EP (1) EP1079223A4 (en)
JP (1) JP4505989B2 (en)
AU (1) AU3849199A (en)
WO (1) WO1999060361A1 (en)

Cited By (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002071514A (en) * 2000-08-28 2002-03-08 Nikon Corp Inspection apparatus, exposure apparatus provided with the inspection apparatus and production method of micro device
JP2003100613A (en) * 2001-09-26 2003-04-04 Nikon Corp Wave-front aberration measuring apparatus and method, aligner, and method of manufacturing device
EP1347501A1 (en) * 2000-12-22 2003-09-24 Nikon Corporation Wavefront aberration measuring instrument, wavefront aberration measuring method, exposure apparatus, and method for manufacturing microdevice
US6961115B2 (en) 2001-02-13 2005-11-01 Nikon Corporation Specification determining method, projection optical system making method and adjusting method, exposure apparatus and making method thereof, and computer system
US7075651B2 (en) 2000-12-28 2006-07-11 Nikon Corporation Image forming characteristics measuring method, image forming characteristics adjusting method, exposure method and apparatus, program and storage medium, and device manufacturing method
US7088426B2 (en) 2002-03-01 2006-08-08 Nikon Corporation Projection optical system adjustment method, prediction method, evaluation method, adjustment method, exposure method and exposure apparatus, program, and device manufacturing method
WO2007007746A1 (en) 2005-07-11 2007-01-18 Nikon Corporation Exposure apparatus and method for manufacturing device
US7230682B2 (en) 2002-01-29 2007-06-12 Nikon Corporation Image forming state adjusting system, exposure method and exposure apparatus, and program and information storage medium
WO2007066692A1 (en) 2005-12-06 2007-06-14 Nikon Corporation Exposure method, exposure apparatus, and method for manufacturing device
JP2007518257A (en) * 2004-01-16 2007-07-05 カール ツァイス エスエムテー アクチェンゲゼルシャフト Apparatus and method for optical measurement of the optical system, the measurement structure support, and a microlithography projection exposure apparatus
WO2007094414A1 (en) 2006-02-16 2007-08-23 Nikon Corporation Exposure apparatus, exposing method, and device manufacturing method
WO2007094407A1 (en) 2006-02-16 2007-08-23 Nikon Corporation Exposure apparatus, exposing method, and device manufacturing method
WO2007097466A1 (en) 2006-02-21 2007-08-30 Nikon Corporation Measuring device and method, processing device and method, pattern forming device and method, exposing device and method, and device fabricating method
WO2007097380A1 (en) 2006-02-21 2007-08-30 Nikon Corporation Pattern forming apparatus, pattern forming method, mobile object driving system, mobile body driving method, exposure apparatus, exposure method and device manufacturing method
WO2007097379A1 (en) 2006-02-21 2007-08-30 Nikon Corporation Pattern forming apparatus, mark detecting apparatus, exposure apparatus, pattern forming method, exposure method and device manufacturing method
WO2007136089A1 (en) 2006-05-23 2007-11-29 Nikon Corporation Maintenance method, exposure method and apparatus, and device manufacturing method
WO2007136052A1 (en) 2006-05-22 2007-11-29 Nikon Corporation Exposure method and apparatus, maintenance method, and device manufacturing method
WO2007135990A1 (en) 2006-05-18 2007-11-29 Nikon Corporation Exposure method and apparatus, maintenance method and device manufacturing method
WO2008001871A1 (en) 2006-06-30 2008-01-03 Nikon Corporation Maintenance method, exposure method and apparatus and device manufacturing method
WO2008026732A1 (en) 2006-08-31 2008-03-06 Nikon Corporation Mobile body drive system and mobile body drive method, pattern formation apparatus and method, exposure apparatus and method, device manufacturing method, and decision method
WO2008026739A1 (en) 2006-08-31 2008-03-06 Nikon Corporation Mobile body drive method and mobile body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
WO2008026742A1 (en) 2006-08-31 2008-03-06 Nikon Corporation Mobile body drive method and mobile body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
WO2008029758A1 (en) 2006-09-01 2008-03-13 Nikon Corporation Mobile body driving method, mobile body driving system, pattern forming method and apparatus, exposure method and apparatus and device manufacturing method
WO2008029757A1 (en) 2006-09-01 2008-03-13 Nikon Corporation Mobile object driving method, mobile object driving system, pattern forming method and apparatus, exposure method and apparatus, device manufacturing method and calibration method
JP2009521117A (en) * 2005-12-23 2009-05-28 カール・ツァイス・エスエムティー・アーゲー Optical imaging device including a determination of imaging errors
JP2009150865A (en) * 2007-11-30 2009-07-09 Waida Seisakusho:Kk Edge detection method, edge detector and working machine using the same
US7692764B2 (en) 2004-08-30 2010-04-06 Nikon Corporation Exposure apparatus, operation decision method, substrate processing system, maintenance management method, and device manufacturing method
JP2010183112A (en) * 2003-11-14 2010-08-19 Asml Netherlands Bv Lithographic apparatus, and method of manufacturing the same
EP2226682A2 (en) 2004-08-03 2010-09-08 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US7843550B2 (en) 2003-07-25 2010-11-30 Nikon Corporation Projection optical system inspecting method and inspection apparatus, and a projection optical system manufacturing method
US7949496B2 (en) 2002-01-18 2011-05-24 Spm Instrument Ab Analysis system
WO2011068254A1 (en) 2009-12-02 2011-06-09 Nikon Corporation Exposure apparatus and device fabricating method
US8023106B2 (en) 2007-08-24 2011-09-20 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
US8089608B2 (en) 2005-04-18 2012-01-03 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US8098362B2 (en) 2007-05-30 2012-01-17 Nikon Corporation Detection device, movable body apparatus, pattern formation apparatus and pattern formation method, exposure apparatus and exposure method, and device manufacturing method
US8120763B2 (en) 2002-12-20 2012-02-21 Carl Zeiss Smt Gmbh Device and method for the optical measurement of an optical system by using an immersion fluid
US8154708B2 (en) 2003-06-09 2012-04-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8194232B2 (en) 2007-07-24 2012-06-05 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, position control method and position control system, and device manufacturing method
US8208119B2 (en) 2004-02-04 2012-06-26 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8218129B2 (en) 2007-08-24 2012-07-10 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, measuring method, and position measurement system
US8236467B2 (en) 2005-04-28 2012-08-07 Nikon Corporation Exposure method, exposure apparatus, and device manufacturing method
US8237919B2 (en) 2007-08-24 2012-08-07 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method for continuous position measurement of movable body before and after switching between sensor heads
US8264669B2 (en) 2007-07-24 2012-09-11 Nikon Corporation Movable body drive method, pattern formation method, exposure method, and device manufacturing method for maintaining position coordinate before and after switching encoder head
JP2013002819A (en) * 2011-06-10 2013-01-07 Horiba Ltd Flatness measuring device
US8472002B2 (en) 2002-11-12 2013-06-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2013100202A1 (en) 2011-12-29 2013-07-04 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
WO2013100203A2 (en) 2011-12-29 2013-07-04 Nikon Corporation Carrier method, exposure method, carrier system and exposure apparatus, and device manufacturing method
US8547527B2 (en) 2007-07-24 2013-10-01 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and pattern formation apparatus, and device manufacturing method
EP2717295A1 (en) 2003-12-03 2014-04-09 Nikon Corporation Exposure apparatus, exposure method, and method for producing a device
WO2014073120A1 (en) 2012-11-12 2014-05-15 Nikon Corporation Exposure apparatus and exposure method, and device manufacturing method
EP2772804A1 (en) 2004-11-18 2014-09-03 Nikon Corporation Positioning and loading a substrate in an exposure apparatus
US8867022B2 (en) 2007-08-24 2014-10-21 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, and device manufacturing method
US8902401B2 (en) 2006-05-09 2014-12-02 Carl Zeiss Smt Gmbh Optical imaging device with thermal attenuation
US8941810B2 (en) 2005-12-30 2015-01-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9304412B2 (en) 2007-08-24 2016-04-05 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and measuring method
US9389345B2 (en) 2011-03-22 2016-07-12 Nikon Corporation Optical element, illumination device, measurement apparatus, photomask, exposure method, and device manufacturing method
US9482966B2 (en) 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9846371B2 (en) 2003-06-13 2017-12-19 Nikon Corporation Exposure method, substrate stage, exposure apparatus, and device manufacturing method
US10345710B2 (en) 2004-01-20 2019-07-09 Carl Zeiss Smt Gmbh Microlithographic projection exposure apparatus and measuring device for a projection lens

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6548797B1 (en) 2000-10-20 2003-04-15 Nikon Corporation Apparatus and method for measuring a wavefront using a screen with apertures adjacent to a multi-lens array
US6577447B1 (en) 2000-10-20 2003-06-10 Nikon Corporation Multi-lens array of a wavefront sensor for reducing optical interference and method thereof
JP2002198279A (en) 2000-12-25 2002-07-12 Nikon Corp Position detecting method, optical characteristic measuring method, optical characteristic measuring equipment, aligner and method for manufacturing device
JP2002202220A (en) 2000-12-27 2002-07-19 Nikon Corp Position detection method, position detector, optical characteristic measuring method, optical characteristic measuring device, exposure device, and device manufacturing method
CN1491427A (en) 2001-02-06 2004-04-21 株式会社尼康 Exposure system, and exposure method, and device production method
JP2003257812A (en) 2002-02-27 2003-09-12 Nikon Corp Evaluating method for imaging optical system, adjusting method for the same, aligner, and alignment method
DE10327019A1 (en) 2003-06-12 2004-12-30 Carl Zeiss Sms Gmbh A method of determining the imaging quality of an optical imaging system
KR101117429B1 (en) 2003-10-31 2012-04-16 가부시키가이샤 니콘 Exposure apparatus and devce producing method
EP1801853A4 (en) 2004-08-18 2008-06-04 Nikon Corp Exposure apparatus and device manufacturing method
JP5125505B2 (en) 2005-04-25 2013-01-23 株式会社ニコン Exposure method and an exposure apparatus, and device manufacturing method
JP5055971B2 (en) 2006-11-16 2012-10-24 株式会社ニコン Surface treatment method and surface treatment apparatus, exposure method and apparatus, and device manufacturing method
WO2008146819A1 (en) 2007-05-28 2008-12-04 Nikon Corporation Exposure apparatus, device manufacturing method, cleaning device, cleaning method and exposure method
JP5369443B2 (en) 2008-02-05 2013-12-18 株式会社ニコン Stage apparatus, exposure apparatus, exposure method, and device manufacturing method
US8654306B2 (en) 2008-04-14 2014-02-18 Nikon Corporation Exposure apparatus, cleaning method, and device fabricating method
WO2011055860A1 (en) 2009-11-09 2011-05-12 Nikon Corporation Exposure apparatus, exposure method, exposure apparatus maintenance method, exposure apparatus adjustment method and device manufacturing method
US20120019802A1 (en) 2010-07-23 2012-01-26 Nikon Corporation Cleaning method, immersion exposure apparatus, device fabricating method, program, and storage medium
US20120019804A1 (en) 2010-07-23 2012-01-26 Nikon Corporation Cleaning method, cleaning apparatus, device fabricating method, program, and storage medium
US20120019803A1 (en) 2010-07-23 2012-01-26 Nikon Corporation Cleaning method, liquid immersion member, immersion exposure apparatus, device fabricating method, program, and storage medium
US20130016329A1 (en) 2011-07-12 2013-01-17 Nikon Corporation Exposure apparatus, exposure method, measurement method, and device manufacturing method
CN104198164B (en) * 2014-09-19 2017-02-15 中国科学院光电技术研究所 Focus detection method based on the former principle of detecting the Hartmann

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02238338A (en) * 1989-03-13 1990-09-20 Hitachi Ltd Lens inspecting apparatus
JPH0949781A (en) * 1995-08-08 1997-02-18 Nikon Corp Inspecting device for optical system and projection exposure apparatus with the inspecting device
JPH1092722A (en) * 1996-09-18 1998-04-10 Nikon Corp Aligner

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5202748A (en) * 1991-06-07 1993-04-13 Litel Instruments In situ process control system for steppers
US5754299A (en) * 1995-01-13 1998-05-19 Nikon Corporation Inspection apparatus and method for optical system, exposure apparatus provided with the inspection apparatus, and alignment apparatus and optical system thereof applicable to the exposure apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02238338A (en) * 1989-03-13 1990-09-20 Hitachi Ltd Lens inspecting apparatus
JPH0949781A (en) * 1995-08-08 1997-02-18 Nikon Corp Inspecting device for optical system and projection exposure apparatus with the inspecting device
JPH1092722A (en) * 1996-09-18 1998-04-10 Nikon Corp Aligner

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1079223A4 *

Cited By (186)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002071514A (en) * 2000-08-28 2002-03-08 Nikon Corp Inspection apparatus, exposure apparatus provided with the inspection apparatus and production method of micro device
JP4692862B2 (en) * 2000-08-28 2011-06-01 株式会社ニコン Inspection apparatus, an exposure apparatus equipped with the inspecting apparatus, and a micro device manufacturing method
EP1347501A4 (en) * 2000-12-22 2006-06-21 Nikon Corp Wavefront aberration measuring instrument, wavefront aberration measuring method, exposure apparatus, and method for manufacturing microdevice
EP1347501A1 (en) * 2000-12-22 2003-09-24 Nikon Corporation Wavefront aberration measuring instrument, wavefront aberration measuring method, exposure apparatus, and method for manufacturing microdevice
US7075651B2 (en) 2000-12-28 2006-07-11 Nikon Corporation Image forming characteristics measuring method, image forming characteristics adjusting method, exposure method and apparatus, program and storage medium, and device manufacturing method
US6961115B2 (en) 2001-02-13 2005-11-01 Nikon Corporation Specification determining method, projection optical system making method and adjusting method, exposure apparatus and making method thereof, and computer system
US7215408B2 (en) 2001-02-13 2007-05-08 Nikon Corporation Specification determining method, projection optical system making method and adjusting method, exposure apparatus and making method thereof, and computer system
JP2003100613A (en) * 2001-09-26 2003-04-04 Nikon Corp Wave-front aberration measuring apparatus and method, aligner, and method of manufacturing device
JP4661015B2 (en) * 2001-09-26 2011-03-30 株式会社ニコン Wavefront aberration measuring apparatus and the wavefront aberration measuring method, and manufacturing method for an exposure apparatus and device
US7949496B2 (en) 2002-01-18 2011-05-24 Spm Instrument Ab Analysis system
US7391497B2 (en) 2002-01-29 2008-06-24 Nikon Corporation Image forming state adjusting system, exposure method and exposure apparatus, and program and information storage medium
US7405803B2 (en) 2002-01-29 2008-07-29 Nikon Corporation Image forming state adjusting system, exposure method and exposure apparatus, and program and information storage medium
US7230682B2 (en) 2002-01-29 2007-06-12 Nikon Corporation Image forming state adjusting system, exposure method and exposure apparatus, and program and information storage medium
US7088426B2 (en) 2002-03-01 2006-08-08 Nikon Corporation Projection optical system adjustment method, prediction method, evaluation method, adjustment method, exposure method and exposure apparatus, program, and device manufacturing method
US7102731B2 (en) 2002-03-01 2006-09-05 Nikon Corporation Projection optical system adjustment method, prediction method, evaluation method, adjustment method, exposure method and exposure apparatus, program, and device manufacturing method
US8558989B2 (en) 2002-11-12 2013-10-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10261428B2 (en) 2002-11-12 2019-04-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10191389B2 (en) 2002-11-12 2019-01-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9740107B2 (en) 2002-11-12 2017-08-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9366972B2 (en) 2002-11-12 2016-06-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8472002B2 (en) 2002-11-12 2013-06-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9482966B2 (en) 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9057967B2 (en) 2002-11-12 2015-06-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8836929B2 (en) 2002-12-20 2014-09-16 Carl Zeiss Smt Gmbh Device and method for the optical measurement of an optical system by using an immersion fluid
US8120763B2 (en) 2002-12-20 2012-02-21 Carl Zeiss Smt Gmbh Device and method for the optical measurement of an optical system by using an immersion fluid
US9152058B2 (en) 2003-06-09 2015-10-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a member and a fluid opening
US8154708B2 (en) 2003-06-09 2012-04-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8482845B2 (en) 2003-06-09 2013-07-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9081299B2 (en) 2003-06-09 2015-07-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving removal of liquid entering a gap
US9541843B2 (en) 2003-06-09 2017-01-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a sensor detecting a radiation beam through liquid
US10180629B2 (en) 2003-06-09 2019-01-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9846371B2 (en) 2003-06-13 2017-12-19 Nikon Corporation Exposure method, substrate stage, exposure apparatus, and device manufacturing method
EP3346485A1 (en) 2003-07-25 2018-07-11 Nikon Corporation Projection optical system inspecting method and inspection apparatus, and a projection optical system manufacturing method
US7843550B2 (en) 2003-07-25 2010-11-30 Nikon Corporation Projection optical system inspecting method and inspection apparatus, and a projection optical system manufacturing method
US7868997B2 (en) 2003-07-25 2011-01-11 Nikon Corporation Projection optical system inspecting method and inspection apparatus, and a projection optical system manufacturing method
US9134622B2 (en) 2003-11-14 2015-09-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10345712B2 (en) 2003-11-14 2019-07-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9952515B2 (en) 2003-11-14 2018-04-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2010183112A (en) * 2003-11-14 2010-08-19 Asml Netherlands Bv Lithographic apparatus, and method of manufacturing the same
EP2717295A1 (en) 2003-12-03 2014-04-09 Nikon Corporation Exposure apparatus, exposure method, and method for producing a device
US9182685B2 (en) 2003-12-03 2015-11-10 Nikon Corporation Exposure apparatus, exposure method, method for producing device, and optical part
US9019469B2 (en) 2003-12-03 2015-04-28 Nikon Corporation Exposure apparatus, exposure method, method for producing device, and optical part
EP3139214A2 (en) 2003-12-03 2017-03-08 Nikon Corporation Exposure apparatus, exposure method, device producing method, and optical component
US10088760B2 (en) 2003-12-03 2018-10-02 Nikon Corporation Exposure apparatus, exposure method, method for producing device, and optical part
JP4782019B2 (en) * 2004-01-16 2011-09-28 カール・ツァイス・エスエムティー・ゲーエムベーハー Apparatus and method for optical measurement of the optical system, the measurement structure support, and a microlithography projection exposure apparatus
JP2007518257A (en) * 2004-01-16 2007-07-05 カール ツァイス エスエムテー アクチェンゲゼルシャフト Apparatus and method for optical measurement of the optical system, the measurement structure support, and a microlithography projection exposure apparatus
US8004690B2 (en) 2004-01-16 2011-08-23 Carl Zeiss Smt Gmbh Device and method for the optical measurement of an optical system, measurement structure support, and microlithographic projection exposure apparatus
US10345710B2 (en) 2004-01-20 2019-07-09 Carl Zeiss Smt Gmbh Microlithographic projection exposure apparatus and measuring device for a projection lens
US10048602B2 (en) 2004-02-04 2018-08-14 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8605252B2 (en) 2004-02-04 2013-12-10 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US9316921B2 (en) 2004-02-04 2016-04-19 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8208119B2 (en) 2004-02-04 2012-06-26 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
EP2226682A2 (en) 2004-08-03 2010-09-08 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
EP3258318A1 (en) 2004-08-03 2017-12-20 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
EP3267257A1 (en) 2004-08-03 2018-01-10 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
EP3048485A1 (en) 2004-08-03 2016-07-27 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US7692764B2 (en) 2004-08-30 2010-04-06 Nikon Corporation Exposure apparatus, operation decision method, substrate processing system, maintenance management method, and device manufacturing method
EP2772803A1 (en) 2004-11-18 2014-09-03 Nikon Corporation Positioning and loading a substrate in an exposure apparatus
EP3346486A1 (en) 2004-11-18 2018-07-11 Nikon Corporation Exposure method and exposure apparatus, and semiconductor device manufacturing methods
EP2772804A1 (en) 2004-11-18 2014-09-03 Nikon Corporation Positioning and loading a substrate in an exposure apparatus
US8724077B2 (en) 2005-04-18 2014-05-13 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US8089608B2 (en) 2005-04-18 2012-01-03 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US8941812B2 (en) 2005-04-28 2015-01-27 Nikon Corporation Exposure method, exposure apparatus, and device manufacturing method
EP2527921A2 (en) 2005-04-28 2012-11-28 Nikon Corporation Exposure method and exposure apparatus
US8236467B2 (en) 2005-04-28 2012-08-07 Nikon Corporation Exposure method, exposure apparatus, and device manufacturing method
WO2007007746A1 (en) 2005-07-11 2007-01-18 Nikon Corporation Exposure apparatus and method for manufacturing device
US8547520B2 (en) 2005-12-06 2013-10-01 Nikon Corporation Exposing method, exposure apparatus, and device fabricating method
WO2007066692A1 (en) 2005-12-06 2007-06-14 Nikon Corporation Exposure method, exposure apparatus, and method for manufacturing device
US8243254B2 (en) 2005-12-06 2012-08-14 Nikon Corporation Exposing method, exposure apparatus, and device fabricating method
US8587765B2 (en) 2005-12-23 2013-11-19 Carl Zeiss Smt Gmbh Optical imaging device with determination of imaging errors
JP2009521117A (en) * 2005-12-23 2009-05-28 カール・ツァイス・エスエムティー・アーゲー Optical imaging device including a determination of imaging errors
US8941810B2 (en) 2005-12-30 2015-01-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10222711B2 (en) 2005-12-30 2019-03-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8947631B2 (en) 2005-12-30 2015-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9436096B2 (en) 2005-12-30 2016-09-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9851644B2 (en) 2005-12-30 2017-12-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2007094407A1 (en) 2006-02-16 2007-08-23 Nikon Corporation Exposure apparatus, exposing method, and device manufacturing method
US8027020B2 (en) 2006-02-16 2011-09-27 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
WO2007094414A1 (en) 2006-02-16 2007-08-23 Nikon Corporation Exposure apparatus, exposing method, and device manufacturing method
US8390779B2 (en) 2006-02-16 2013-03-05 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US10012913B2 (en) 2006-02-21 2018-07-03 Nikon Corporation Pattern forming apparatus and pattern forming method, movable body drive system and movable body drive method, exposure apparatus and exposure method, and device manufacturing method
US9857697B2 (en) 2006-02-21 2018-01-02 Nikon Corporation Pattern forming apparatus, mark detecting apparatus, exposure apparatus, pattern forming method, exposure method, and device manufacturing method
EP3267259A1 (en) 2006-02-21 2018-01-10 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US8908145B2 (en) 2006-02-21 2014-12-09 Nikon Corporation Pattern forming apparatus and pattern forming method, movable body drive system and movable body drive method, exposure apparatus and exposure method, and device manufacturing method
EP2813893A1 (en) 2006-02-21 2014-12-17 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
WO2007097466A1 (en) 2006-02-21 2007-08-30 Nikon Corporation Measuring device and method, processing device and method, pattern forming device and method, exposing device and method, and device fabricating method
EP3267258A1 (en) 2006-02-21 2018-01-10 Nikon Corporation Exposure apparatus, exposure method and device manufacturing method
EP3270226A1 (en) 2006-02-21 2018-01-17 Nikon Corporation Exposure apparatus, exposure method and device manufacturing method
US10132658B2 (en) 2006-02-21 2018-11-20 Nikon Corporation Measuring apparatus and method, processing apparatus and method, pattern forming apparatus and method, exposure apparatus and method, and device manufacturing method
EP3279739A1 (en) 2006-02-21 2018-02-07 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
WO2007097380A1 (en) 2006-02-21 2007-08-30 Nikon Corporation Pattern forming apparatus, pattern forming method, mobile object driving system, mobile body driving method, exposure apparatus, exposure method and device manufacturing method
US10088343B2 (en) 2006-02-21 2018-10-02 Nikon Corporation Measuring apparatus and method, processing apparatus and method, pattern forming apparatus and method, exposure apparatus and method, and device manufacturing method
US9690214B2 (en) 2006-02-21 2017-06-27 Nikon Corporation Pattern forming apparatus and pattern forming method, movable body drive system and movable body drive method, exposure apparatus and exposure method, and device manufacturing method
EP3293577A1 (en) 2006-02-21 2018-03-14 Nikon Corporation Exposure apparatus, exposure method and device manufacturing method
US9103700B2 (en) 2006-02-21 2015-08-11 Nikon Corporation Measuring apparatus and method, processing apparatus and method, pattern forming apparatus and method, exposure apparatus and method, and device manufacturing method
EP3115844A1 (en) 2006-02-21 2017-01-11 Nikon Corporation Exposure apparatus, exposure method and device manufacturing method
US10234773B2 (en) 2006-02-21 2019-03-19 Nikon Corporation Pattern forming apparatus, mark detecting apparatus, exposure apparatus, pattern forming method, exposure method, and device manufacturing method
US9423705B2 (en) 2006-02-21 2016-08-23 Nikon Corporation Pattern forming apparatus, mark detecting apparatus, exposure apparatus, pattern forming method, exposure method, and device manufacturing method
US10088759B2 (en) 2006-02-21 2018-10-02 Nikon Corporation Pattern forming apparatus and pattern forming method, movable body drive system and movable body drive method, exposure apparatus and exposure method, and device manufacturing method
EP3327507A1 (en) 2006-02-21 2018-05-30 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US9329060B2 (en) 2006-02-21 2016-05-03 Nikon Corporation Measuring apparatus and method, processing apparatus and method, pattern forming apparatus and method, exposure apparatus and method, and device manufacturing method
US10139738B2 (en) 2006-02-21 2018-11-27 Nikon Corporation Pattern forming apparatus and pattern forming method, movable body drive system and movable body drive method, exposure apparatus and exposure method, and device manufacturing method
US9989859B2 (en) 2006-02-21 2018-06-05 Nikon Corporation Measuring apparatus and method, processing apparatus and method, pattern forming apparatus and method, exposure apparatus and method, and device manufacturing method
US10345121B2 (en) 2006-02-21 2019-07-09 Nikon Corporation Measuring apparatus and method, processing apparatus and method, pattern forming apparatus and method, exposure apparatus and method, and device manufacturing method
WO2007097379A1 (en) 2006-02-21 2007-08-30 Nikon Corporation Pattern forming apparatus, mark detecting apparatus, exposure apparatus, pattern forming method, exposure method and device manufacturing method
US8902401B2 (en) 2006-05-09 2014-12-02 Carl Zeiss Smt Gmbh Optical imaging device with thermal attenuation
US9810996B2 (en) 2006-05-09 2017-11-07 Carl Zeiss Smt Gmbh Optical imaging device with thermal attenuation
WO2007135990A1 (en) 2006-05-18 2007-11-29 Nikon Corporation Exposure method and apparatus, maintenance method and device manufacturing method
US8514366B2 (en) 2006-05-18 2013-08-20 Nikon Corporation Exposure method and apparatus, maintenance method and device manufacturing method
WO2007136052A1 (en) 2006-05-22 2007-11-29 Nikon Corporation Exposure method and apparatus, maintenance method, and device manufacturing method
WO2007136089A1 (en) 2006-05-23 2007-11-29 Nikon Corporation Maintenance method, exposure method and apparatus, and device manufacturing method
WO2008001871A1 (en) 2006-06-30 2008-01-03 Nikon Corporation Maintenance method, exposure method and apparatus and device manufacturing method
EP2993688A2 (en) 2006-08-31 2016-03-09 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
EP3312676A1 (en) 2006-08-31 2018-04-25 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
WO2008026742A1 (en) 2006-08-31 2008-03-06 Nikon Corporation Mobile body drive method and mobile body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
WO2008026739A1 (en) 2006-08-31 2008-03-06 Nikon Corporation Mobile body drive method and mobile body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
WO2008026732A1 (en) 2006-08-31 2008-03-06 Nikon Corporation Mobile body drive system and mobile body drive method, pattern formation apparatus and method, exposure apparatus and method, device manufacturing method, and decision method
US9958792B2 (en) 2006-08-31 2018-05-01 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
EP3064999A1 (en) 2006-08-31 2016-09-07 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
EP3067748A1 (en) 2006-08-31 2016-09-14 Nikon Corporation Exposure apparatus, exposure method and device manufacturing method
US10353302B2 (en) 2006-08-31 2019-07-16 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
US9983486B2 (en) 2006-08-31 2018-05-29 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
US8203697B2 (en) 2006-08-31 2012-06-19 Nikon Corporation Movable body drive method and system, pattern formation method and apparatus, exposure method and apparatus for driving movable body based on measurement value of encoder and information on flatness of scale, and device manufacturing method
US9568844B2 (en) 2006-08-31 2017-02-14 Nikon Corporation Movable body drive system and movable body drive method, pattern formation apparatus and method, exposure apparatus and method, device manufacturing method, and decision-making method
US10338482B2 (en) 2006-08-31 2019-07-02 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
EP3418807A1 (en) 2006-08-31 2018-12-26 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
EP3291010A1 (en) 2006-08-31 2018-03-07 Nikon Corporation Exposure apparatus and method, and device manufacturing method
US10162274B2 (en) 2006-08-31 2018-12-25 Nikon Corporation Movable body drive method and system, pattern formation method and apparatus, exposure method and apparatus for driving movable body based on measurement value of encoder and information on flatness of scale, and device manufacturing method
EP3279738A1 (en) 2006-08-31 2018-02-07 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
EP2738608A1 (en) 2006-08-31 2014-06-04 Nikon Corporation Method and system for driving a movable body in an exposure apparatus
US8947639B2 (en) 2006-08-31 2015-02-03 Nikon Corporation Exposure method and apparatus measuring position of movable body based on information on flatness of encoder grating section
EP2988320A1 (en) 2006-08-31 2016-02-24 Nikon Corporation Exposure apparatus, exposure method, and device manufactuing method
US10101673B2 (en) 2006-08-31 2018-10-16 Nikon Corporation Movable body drive method and system, pattern formation method and apparatus, exposure method and apparatus for driving movable body based on measurement value of encoder and information on flatness of scale, and device manufacturing method
EP2991101A2 (en) 2006-08-31 2016-03-02 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
US8937710B2 (en) 2006-08-31 2015-01-20 Nikon Corporation Exposure method and apparatus compensating measuring error of encoder due to grating section and displacement of movable body in Z direction
EP2990872A2 (en) 2006-08-31 2016-03-02 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
US10067428B2 (en) 2006-08-31 2018-09-04 Nikon Corporation Movable body drive system and movable body drive method, pattern formation apparatus and method, exposure apparatus and method, device manufacturing method, and decision-making method
US8675171B2 (en) 2006-08-31 2014-03-18 Nikon Corporation Movable body drive system and movable body drive method, pattern formation apparatus and method, exposure apparatus and method, device manufacturing method, and decision-making method
US10353301B2 (en) 2006-08-31 2019-07-16 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
US10073359B2 (en) 2006-08-31 2018-09-11 Nikon Corporation Movable body drive system and movable body drive method, pattern formation apparatus and method, exposure apparatus and method, device manufacturing method, and decision-making method
EP3361317A1 (en) 2006-09-01 2018-08-15 Nikon Corporation Exposure apparatus and exposure method
WO2008029758A1 (en) 2006-09-01 2008-03-13 Nikon Corporation Mobile body driving method, mobile body driving system, pattern forming method and apparatus, exposure method and apparatus and device manufacturing method
WO2008029757A1 (en) 2006-09-01 2008-03-13 Nikon Corporation Mobile object driving method, mobile object driving system, pattern forming method and apparatus, exposure method and apparatus, device manufacturing method and calibration method
US9760021B2 (en) 2006-09-01 2017-09-12 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and calibration method
US9874822B2 (en) 2006-09-01 2018-01-23 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
US9740114B2 (en) 2006-09-01 2017-08-22 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and calibration method
US9081301B2 (en) 2006-09-01 2015-07-14 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and calibration method
US9625834B2 (en) 2006-09-01 2017-04-18 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and calibration method
US10289010B2 (en) 2006-09-01 2019-05-14 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
US9429854B2 (en) 2006-09-01 2016-08-30 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and calibration method
US10289012B2 (en) 2006-09-01 2019-05-14 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and calibration method
US9377698B2 (en) 2006-09-01 2016-06-28 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and calibration method
US9971253B2 (en) 2006-09-01 2018-05-15 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and calibration method
US10197924B2 (en) 2006-09-01 2019-02-05 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and calibration method
US9846374B2 (en) 2006-09-01 2017-12-19 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and calibration method
US8860925B2 (en) 2006-09-01 2014-10-14 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
EP2993523A2 (en) 2006-09-01 2016-03-09 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
EP2993524A2 (en) 2006-09-01 2016-03-09 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and calibration method
US8134688B2 (en) 2006-09-01 2012-03-13 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and calibration method
US8098362B2 (en) 2007-05-30 2012-01-17 Nikon Corporation Detection device, movable body apparatus, pattern formation apparatus and pattern formation method, exposure apparatus and exposure method, and device manufacturing method
US8582084B2 (en) 2007-07-24 2013-11-12 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, position control method and position control system, and device manufacturing method
US8194232B2 (en) 2007-07-24 2012-06-05 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, position control method and position control system, and device manufacturing method
US8264669B2 (en) 2007-07-24 2012-09-11 Nikon Corporation Movable body drive method, pattern formation method, exposure method, and device manufacturing method for maintaining position coordinate before and after switching encoder head
EP3193212A1 (en) 2007-07-24 2017-07-19 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, position control method and position control system, and device manufacturing method
US8547527B2 (en) 2007-07-24 2013-10-01 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and pattern formation apparatus, and device manufacturing method
US9612539B2 (en) 2007-07-24 2017-04-04 Nikon Corporation Movable body drive method, pattern formation method, exposure method, and device manufacturing method for maintaining position coordinate before and after switching encoder head
US8023106B2 (en) 2007-08-24 2011-09-20 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
US8867022B2 (en) 2007-08-24 2014-10-21 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, and device manufacturing method
US8767182B2 (en) 2007-08-24 2014-07-01 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
US9304412B2 (en) 2007-08-24 2016-04-05 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and measuring method
US8237919B2 (en) 2007-08-24 2012-08-07 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method for continuous position measurement of movable body before and after switching between sensor heads
US8218129B2 (en) 2007-08-24 2012-07-10 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, measuring method, and position measurement system
JP2009150865A (en) * 2007-11-30 2009-07-09 Waida Seisakusho:Kk Edge detection method, edge detector and working machine using the same
WO2011068254A1 (en) 2009-12-02 2011-06-09 Nikon Corporation Exposure apparatus and device fabricating method
US9389345B2 (en) 2011-03-22 2016-07-12 Nikon Corporation Optical element, illumination device, measurement apparatus, photomask, exposure method, and device manufacturing method
JP2013002819A (en) * 2011-06-10 2013-01-07 Horiba Ltd Flatness measuring device
US9360772B2 (en) 2011-12-29 2016-06-07 Nikon Corporation Carrier method, exposure method, carrier system and exposure apparatus, and device manufacturing method
US10268126B2 (en) 2011-12-29 2019-04-23 Nikon Corporation Carrier method, exposure method, carrier system and exposure apparatus, and device manufacturing method
WO2013100203A2 (en) 2011-12-29 2013-07-04 Nikon Corporation Carrier method, exposure method, carrier system and exposure apparatus, and device manufacturing method
US9835958B2 (en) 2011-12-29 2017-12-05 Nikon Corporation Carrier method, exposure method, carrier system and exposure apparatus, and device manufacturing method
US9207549B2 (en) 2011-12-29 2015-12-08 Nikon Corporation Exposure apparatus and exposure method, and device manufacturing method with encoder of higher reliability for position measurement
WO2013100202A1 (en) 2011-12-29 2013-07-04 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
JP2015535615A (en) * 2012-11-12 2015-12-14 株式会社ニコン Exposure apparatus and an exposure method, and device manufacturing method
US9772564B2 (en) 2012-11-12 2017-09-26 Nikon Corporation Exposure apparatus and exposure method, and device manufacturing method
WO2014073120A1 (en) 2012-11-12 2014-05-15 Nikon Corporation Exposure apparatus and exposure method, and device manufacturing method
EP3029525A1 (en) 2012-11-12 2016-06-08 Nikon Corporation Exposure apparatus and device manufacturing method

Also Published As

Publication number Publication date
AU3849199A (en) 1999-12-06
JP4505989B2 (en) 2010-07-21
EP1079223A1 (en) 2001-02-28
EP1079223A4 (en) 2002-11-27

Similar Documents

Publication Publication Date Title
JP3301153B2 (en) Projection exposure apparatus, exposure method, and device manufacturing method
US5117255A (en) Projection exposure apparatus
US6538740B1 (en) Adjusting method for position detecting apparatus
KR940006341B1 (en) Method and device for detectiong image plane
US6914665B2 (en) Exposure apparatus, exposure method, and device manufacturing method
US6614535B1 (en) Exposure apparatus with interferometer
US7965387B2 (en) Image plane measurement method, exposure method, device manufacturing method, and exposure apparatus
US6982786B2 (en) Reticle and optical characteristic measuring method
KR101909850B1 (en) Illumination optical system, exposure device and exposure method
KR100538421B1 (en) Projection exposure method and apparatus
US7075651B2 (en) Image forming characteristics measuring method, image forming characteristics adjusting method, exposure method and apparatus, program and storage medium, and device manufacturing method
JP3997068B2 (en) Device capable of applying the calibration method and such a method of lithographic projection apparatus
KR101386057B1 (en) Optical Apparatus, Method of Scanning, Lithographic Apparatus and Device Manufacturing Method
US6975387B2 (en) Wavefront aberration measuring instrument, wavefront aberration measuring method, exposure apparatus, and method for manufacturing micro device
JP3927774B2 (en) Measurement method and a projection exposure apparatus using the same
US20010010579A1 (en) Apparatus and method for projection exposure
US7667829B2 (en) Optical property measurement apparatus and optical property measurement method, exposure apparatus and exposure method, and device manufacturing method
US6018384A (en) Projection exposure system
JP5849137B2 (en) For microlithography projection exposure apparatus and method
US20060232866A1 (en) Optical unit and exposure apparatus having the same
WO2007097379A1 (en) Pattern forming apparatus, mark detecting apparatus, exposure apparatus, pattern forming method, exposure method and device manufacturing method
WO1999023692A1 (en) Aligner and exposure method
WO1999016113A1 (en) Stage device, a scanning aligner and a scanning exposure method, and a device manufactured thereby
WO2005022614A1 (en) Exposure method and apparatus, and device manufacturing method
JP3513842B2 (en) Projection exposure apparatus

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AL AM AT AU AZ BA BB BG BR BY CA CH CN CU CZ DE DK EE ES FI GB GE GH GM HR HU ID IL IS JP KE KG KR KZ LC LK LR LS LT LU LV MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT UA UG US UZ VN YU ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): GH GM KE LS MW SD SL SZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 1020007008180

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 09714183

Country of ref document: US

WWE Wipo information: entry into national phase

Ref document number: 1999921174

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 1999921174

Country of ref document: EP

REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

WWP Wipo information: published in national office

Ref document number: 1020007008180

Country of ref document: KR

WWW Wipo information: withdrawn in national office

Ref document number: 1999921174

Country of ref document: EP

WWG Wipo information: grant in national office

Ref document number: 1020007008180

Country of ref document: KR