KR101417208B1 - 유로 전환 장치, 처리 장치, 유로 전환 방법, 처리 방법 및 기억 매체 - Google Patents
유로 전환 장치, 처리 장치, 유로 전환 방법, 처리 방법 및 기억 매체 Download PDFInfo
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- KR101417208B1 KR101417208B1 KR1020110040840A KR20110040840A KR101417208B1 KR 101417208 B1 KR101417208 B1 KR 101417208B1 KR 1020110040840 A KR1020110040840 A KR 1020110040840A KR 20110040840 A KR20110040840 A KR 20110040840A KR 101417208 B1 KR101417208 B1 KR 101417208B1
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- flow path
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- Prior art date
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- 238000000034 method Methods 0.000 title claims description 26
- 238000003860 storage Methods 0.000 title claims description 9
- 238000003672 processing method Methods 0.000 title claims description 7
- 239000012530 fluid Substances 0.000 claims abstract description 56
- 238000007599 discharging Methods 0.000 claims description 12
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 238000004590 computer program Methods 0.000 claims description 4
- 238000004804 winding Methods 0.000 claims 3
- 238000006243 chemical reaction Methods 0.000 claims 1
- 238000002485 combustion reaction Methods 0.000 claims 1
- 239000007788 liquid Substances 0.000 abstract description 160
- 235000012431 wafers Nutrition 0.000 abstract description 72
- 230000007246 mechanism Effects 0.000 abstract description 28
- 239000000126 substance Substances 0.000 description 50
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 36
- 230000002378 acidificating effect Effects 0.000 description 10
- 229910021641 deionized water Inorganic materials 0.000 description 10
- 238000001035 drying Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 6
- 239000003595 mist Substances 0.000 description 6
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 4
- 239000000356 contaminant Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- -1 polypropylene Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 238000001784 detoxification Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/0318—Processes
- Y10T137/0324—With control of flow by a condition or characteristic of a fluid
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/8593—Systems
- Y10T137/87571—Multiple inlet with single outlet
- Y10T137/87676—With flow control
- Y10T137/87684—Valve in each inlet
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/8593—Systems
- Y10T137/877—With flow control means for branched passages
- Y10T137/87877—Single inlet with multiple distinctly valved outlets
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Multiple-Way Valves (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010141921A JP5240245B2 (ja) | 2010-06-22 | 2010-06-22 | 流路切替え装置、処理装置、流路切替え方法及び処理方法並びに記憶媒体 |
| JPJP-P-2010-141921 | 2010-06-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20110139096A KR20110139096A (ko) | 2011-12-28 |
| KR101417208B1 true KR101417208B1 (ko) | 2014-07-08 |
Family
ID=45327600
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020110040840A Active KR101417208B1 (ko) | 2010-06-22 | 2011-04-29 | 유로 전환 장치, 처리 장치, 유로 전환 방법, 처리 방법 및 기억 매체 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8840752B2 (enExample) |
| JP (1) | JP5240245B2 (enExample) |
| KR (1) | KR101417208B1 (enExample) |
| CN (1) | CN102315142B (enExample) |
| TW (1) | TWI487049B (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5240245B2 (ja) * | 2010-06-22 | 2013-07-17 | 東京エレクトロン株式会社 | 流路切替え装置、処理装置、流路切替え方法及び処理方法並びに記憶媒体 |
| JP2013011289A (ja) * | 2011-06-28 | 2013-01-17 | Tokyo Electron Ltd | ゲートバルブ及びそれを用いた基板処理システム |
| JP6003716B2 (ja) * | 2012-04-17 | 2016-10-05 | 株式会社デンソー | 流路切替装置 |
| CN103453215B (zh) * | 2012-05-31 | 2016-04-27 | 英属开曼群岛商精曜有限公司 | 阀门总成以及阀门 |
| JP6219848B2 (ja) * | 2012-12-28 | 2017-10-25 | 株式会社Screenホールディングス | 処理装置とその排気切換装置並びに排気切換ユニットと切換弁ボックス |
| US9698029B2 (en) * | 2014-02-19 | 2017-07-04 | Lam Research Ag | Method and apparatus for processing wafer-shaped articles |
| JP6482979B2 (ja) * | 2015-07-29 | 2019-03-13 | 東京エレクトロン株式会社 | 液処理装置 |
| TWI629116B (zh) * | 2016-06-28 | 2018-07-11 | 荏原製作所股份有限公司 | 清洗裝置、具備該清洗裝置之鍍覆裝置、以及清洗方法 |
| US10875061B2 (en) | 2016-08-10 | 2020-12-29 | Pat Technology Systems Inc. | Fume extraction apparatus with movable extraction aperture |
| JP6990602B2 (ja) * | 2018-02-27 | 2022-01-12 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及びコンピュータ読み取り可能な記録媒体 |
| JP7019184B2 (ja) * | 2018-07-17 | 2022-02-15 | スピードファム株式会社 | 処理液切換装置 |
| JP7203545B2 (ja) * | 2018-09-21 | 2023-01-13 | 株式会社Screenホールディングス | 基板処理装置 |
| JP6611893B2 (ja) * | 2018-11-01 | 2019-11-27 | 東京エレクトロン株式会社 | 基板液処理装置 |
| CN209540113U (zh) * | 2019-01-05 | 2019-10-25 | 宁波大叶园林工业股份有限公司 | 一种新型四通通水结构 |
| JP7370277B2 (ja) * | 2020-02-26 | 2023-10-27 | 株式会社Screenホールディングス | 基板処理装置 |
| TWI824716B (zh) * | 2020-02-26 | 2023-12-01 | 日商斯庫林集團股份有限公司 | 基板處理裝置 |
| CN113494680B (zh) * | 2020-04-07 | 2023-05-12 | 添可智能科技有限公司 | 通路切换装置、液体供给系统和通路切换方法 |
| CN116538437A (zh) * | 2020-04-07 | 2023-08-04 | 添可智能科技有限公司 | 液体供给系统和残留液体清理方法 |
| KR102855381B1 (ko) * | 2022-12-12 | 2025-09-04 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1012523A (ja) * | 1996-06-21 | 1998-01-16 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
| JP2008034490A (ja) * | 2006-07-26 | 2008-02-14 | Tokyo Electron Ltd | 液処理装置 |
| JP2009252884A (ja) * | 2008-04-03 | 2009-10-29 | Tokyo Electron Ltd | 圧力制御機構、基板処理装置、基板処理方法及び記憶媒体 |
| US20100058841A1 (en) * | 2007-05-15 | 2010-03-11 | Ge Healthcare Bio-Sciences Ab | Flow distributing valve |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DD206687A3 (de) * | 1981-07-28 | 1984-02-01 | Mikroelektronik Zt Forsch Tech | Verfahren und vorrichtung zur gasfuehrung fuer lp cvd prozesse in einem rohrreaktor |
| JP3669897B2 (ja) * | 1999-06-09 | 2005-07-13 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
| JP3584185B2 (ja) * | 1999-09-21 | 2004-11-04 | エア・ウォーター株式会社 | 冷凍機およびこれに用いるロータリー弁 |
| CN2541112Y (zh) | 2002-05-29 | 2003-03-26 | 苏州精机机械工业有限公司 | 旋转式油位闸门 |
| US8298338B2 (en) * | 2007-12-26 | 2012-10-30 | Samsung Electronics Co., Ltd. | Chemical vapor deposition apparatus |
| JP5012651B2 (ja) * | 2008-05-14 | 2012-08-29 | 東京エレクトロン株式会社 | 塗布装置、塗布方法、塗布、現像装置及び記憶媒体 |
| JP5240245B2 (ja) * | 2010-06-22 | 2013-07-17 | 東京エレクトロン株式会社 | 流路切替え装置、処理装置、流路切替え方法及び処理方法並びに記憶媒体 |
-
2010
- 2010-06-22 JP JP2010141921A patent/JP5240245B2/ja active Active
-
2011
- 2011-04-29 KR KR1020110040840A patent/KR101417208B1/ko active Active
- 2011-06-15 US US13/161,275 patent/US8840752B2/en active Active
- 2011-06-17 CN CN201110168465.4A patent/CN102315142B/zh active Active
- 2011-06-22 TW TW100121818A patent/TWI487049B/zh active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1012523A (ja) * | 1996-06-21 | 1998-01-16 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
| JP2008034490A (ja) * | 2006-07-26 | 2008-02-14 | Tokyo Electron Ltd | 液処理装置 |
| US20100058841A1 (en) * | 2007-05-15 | 2010-03-11 | Ge Healthcare Bio-Sciences Ab | Flow distributing valve |
| JP2009252884A (ja) * | 2008-04-03 | 2009-10-29 | Tokyo Electron Ltd | 圧力制御機構、基板処理装置、基板処理方法及び記憶媒体 |
Also Published As
| Publication number | Publication date |
|---|---|
| US8840752B2 (en) | 2014-09-23 |
| TW201214601A (en) | 2012-04-01 |
| CN102315142B (zh) | 2015-03-18 |
| TWI487049B (zh) | 2015-06-01 |
| JP2012009511A (ja) | 2012-01-12 |
| KR20110139096A (ko) | 2011-12-28 |
| CN102315142A (zh) | 2012-01-11 |
| JP5240245B2 (ja) | 2013-07-17 |
| US20110308626A1 (en) | 2011-12-22 |
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