KR101399208B1 - 소스/드레인 스트레서 및 그를 위한 방법 - Google Patents

소스/드레인 스트레서 및 그를 위한 방법 Download PDF

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KR101399208B1
KR101399208B1 KR1020097017872A KR20097017872A KR101399208B1 KR 101399208 B1 KR101399208 B1 KR 101399208B1 KR 1020097017872 A KR1020097017872 A KR 1020097017872A KR 20097017872 A KR20097017872 A KR 20097017872A KR 101399208 B1 KR101399208 B1 KR 101399208B1
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semiconductor device
semiconductor
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KR20090125757A (ko
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다 장
브라이언 에이. 윈스테드
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프리스케일 세미컨덕터, 인크.
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • H10D30/0275—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs forming single crystalline semiconductor source or drain regions resulting in recessed gates, e.g. forming raised source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/797—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being in source or drain regions, e.g. SiGe source or drain
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/025—Manufacture or treatment forming recessed gates, e.g. by using local oxidation
    • H10D64/027—Manufacture or treatment forming recessed gates, e.g. by using local oxidation by etching at gate locations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
    • H10P30/221—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks characterised by the angle between the ion beam and the mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/021—Forming source or drain recesses by etching e.g. recessing by etching and then refilling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/021—Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
KR1020097017872A 2007-02-28 2008-02-11 소스/드레인 스트레서 및 그를 위한 방법 Expired - Fee Related KR101399208B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/680,181 2007-02-28
US11/680,181 US7572706B2 (en) 2007-02-28 2007-02-28 Source/drain stressor and method therefor
PCT/US2008/053563 WO2008106304A1 (en) 2007-02-28 2008-02-11 Source/drain stressor and method therefor

Publications (2)

Publication Number Publication Date
KR20090125757A KR20090125757A (ko) 2009-12-07
KR101399208B1 true KR101399208B1 (ko) 2014-05-27

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KR1020097017872A Expired - Fee Related KR101399208B1 (ko) 2007-02-28 2008-02-11 소스/드레인 스트레서 및 그를 위한 방법

Country Status (7)

Country Link
US (1) US7572706B2 (https=)
EP (1) EP2115778A4 (https=)
JP (1) JP5559547B2 (https=)
KR (1) KR101399208B1 (https=)
CN (1) CN101622713B (https=)
TW (1) TWI436431B (https=)
WO (1) WO2008106304A1 (https=)

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WO2008015211A1 (en) 2006-08-01 2008-02-07 Koninklijke Philips Electronics N.V. Effecting selectivity of silicon or silicon-germanium deposition on a silicon or silicon-germanium substrate by doping
KR100746232B1 (ko) * 2006-08-25 2007-08-03 삼성전자주식회사 스트레인드 채널을 갖는 모스 트랜지스터 및 그 제조방법
US20080248598A1 (en) * 2007-04-09 2008-10-09 Rohit Pal Method and apparatus for determining characteristics of a stressed material using scatterometry
US7745847B2 (en) * 2007-08-09 2010-06-29 United Microelectronics Corp. Metal oxide semiconductor transistor
US20100102393A1 (en) * 2008-10-29 2010-04-29 Chartered Semiconductor Manufacturing, Ltd. Metal gate transistors
US8124487B2 (en) * 2008-12-22 2012-02-28 Varian Semiconductor Equipment Associates, Inc. Method for enhancing tensile stress and source/drain activation using Si:C
US20110049582A1 (en) * 2009-09-03 2011-03-03 International Business Machines Corporation Asymmetric source and drain stressor regions
US8928094B2 (en) * 2010-09-03 2015-01-06 Taiwan Semiconductor Manufacturing Company, Ltd. Strained asymmetric source/drain
CN102456739A (zh) * 2010-10-28 2012-05-16 中国科学院微电子研究所 半导体结构及其形成方法
CN102683385B (zh) * 2012-05-30 2014-12-24 清华大学 半导体结构及其形成方法
KR20140042460A (ko) * 2012-09-28 2014-04-07 삼성전자주식회사 반도체 소자
KR102137371B1 (ko) * 2013-10-29 2020-07-27 삼성전자 주식회사 반도체 장치 및 이의 제조 방법
CN106960838B (zh) * 2016-01-11 2019-07-02 中芯国际集成电路制造(上海)有限公司 静电保护器件及其形成方法
US10032868B2 (en) 2016-09-09 2018-07-24 Texas Instruments Incorporated High performance super-beta NPN (SBNPN)
CN114072544A (zh) * 2019-07-26 2022-02-18 应用材料公司 各向异性的外延生长

Citations (1)

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US6833307B1 (en) * 2002-10-30 2004-12-21 Advanced Micro Devices, Inc. Method for manufacturing a semiconductor component having an early halo implant

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JPS6313378A (ja) * 1986-07-04 1988-01-20 Nippon Telegr & Teleph Corp <Ntt> 半導体装置およびその製造方法
DE69028669T2 (de) * 1989-07-31 1997-02-20 Canon Kk Dünnschicht-Transistor und seine Herstellung
JPH0423329A (ja) * 1990-05-14 1992-01-27 Fujitsu Ltd 半導体装置の製造方法
US5427964A (en) 1994-04-04 1995-06-27 Motorola, Inc. Insulated gate field effect transistor and method for fabricating
JPH0992825A (ja) * 1995-09-26 1997-04-04 Fuji Film Micro Device Kk 半導体装置およびその製造方法
US6621131B2 (en) 2001-11-01 2003-09-16 Intel Corporation Semiconductor transistor having a stressed channel
JP2004241755A (ja) * 2003-01-15 2004-08-26 Renesas Technology Corp 半導体装置
US20040262683A1 (en) * 2003-06-27 2004-12-30 Bohr Mark T. PMOS transistor strain optimization with raised junction regions
KR100488196B1 (ko) 2003-09-29 2005-05-09 삼성전자주식회사 돌출된 드레인을 가지는 트랜지스터 및 이의 제조 방법
US7244654B2 (en) * 2003-12-31 2007-07-17 Texas Instruments Incorporated Drive current improvement from recessed SiGe incorporation close to gate
JP4837902B2 (ja) * 2004-06-24 2011-12-14 富士通セミコンダクター株式会社 半導体装置
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Also Published As

Publication number Publication date
JP2010520620A (ja) 2010-06-10
EP2115778A4 (en) 2011-11-02
CN101622713B (zh) 2013-10-23
TWI436431B (zh) 2014-05-01
US7572706B2 (en) 2009-08-11
TW200847299A (en) 2008-12-01
US20080203449A1 (en) 2008-08-28
EP2115778A1 (en) 2009-11-11
KR20090125757A (ko) 2009-12-07
CN101622713A (zh) 2010-01-06
WO2008106304A1 (en) 2008-09-04
JP5559547B2 (ja) 2014-07-23

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