KR101321657B1 - 액체회수장치, 노광장치, 노광방법 및 디바이스 제조방법 - Google Patents

액체회수장치, 노광장치, 노광방법 및 디바이스 제조방법 Download PDF

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Publication number
KR101321657B1
KR101321657B1 KR1020117021162A KR20117021162A KR101321657B1 KR 101321657 B1 KR101321657 B1 KR 101321657B1 KR 1020117021162 A KR1020117021162 A KR 1020117021162A KR 20117021162 A KR20117021162 A KR 20117021162A KR 101321657 B1 KR101321657 B1 KR 101321657B1
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South Korea
Prior art keywords
liquid
substrate
optical system
projection optical
supply
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Expired - Fee Related
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KR1020117021162A
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English (en)
Korean (ko)
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KR20110120938A (ko
Inventor
다이 아라이
히데아키 하라
히로아키 다카이와
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가부시키가이샤 니콘
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70533—Controlling abnormal operating mode, e.g. taking account of waiting time, decision to rework or rework flow
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70991—Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Toxicology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Stand-By Power Supply Arrangements (AREA)
  • Microscoopes, Condenser (AREA)
KR1020117021162A 2003-08-29 2004-08-27 액체회수장치, 노광장치, 노광방법 및 디바이스 제조방법 Expired - Fee Related KR101321657B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2003307771 2003-08-29
JPJP-P-2003-307771 2003-08-29
JPJP-P-2004-150353 2004-05-20
JP2004150353 2004-05-20
PCT/JP2004/012787 WO2005022615A1 (ja) 2003-08-29 2004-08-27 液体回収装置、露光装置、露光方法及びデバイス製造方法

Related Parent Applications (1)

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KR1020057011493A Division KR101345020B1 (ko) 2003-08-29 2004-08-27 액체회수장치, 노광장치, 노광방법 및 디바이스 제조방법

Related Child Applications (1)

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KR1020117028493A Division KR101477850B1 (ko) 2003-08-29 2004-08-27 액체회수장치, 노광장치, 노광방법 및 디바이스 제조방법

Publications (2)

Publication Number Publication Date
KR20110120938A KR20110120938A (ko) 2011-11-04
KR101321657B1 true KR101321657B1 (ko) 2013-10-23

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KR1020117021162A Expired - Fee Related KR101321657B1 (ko) 2003-08-29 2004-08-27 액체회수장치, 노광장치, 노광방법 및 디바이스 제조방법
KR1020167008491A Expired - Fee Related KR101874724B1 (ko) 2003-08-29 2004-08-27 액체회수장치, 노광장치, 노광방법 및 디바이스 제조방법
KR1020187018319A Ceased KR20180077311A (ko) 2003-08-29 2004-08-27 액체회수장치, 노광장치, 노광방법 및 디바이스 제조방법
KR1020057011493A Expired - Fee Related KR101345020B1 (ko) 2003-08-29 2004-08-27 액체회수장치, 노광장치, 노광방법 및 디바이스 제조방법
KR1020117028493A Expired - Fee Related KR101477850B1 (ko) 2003-08-29 2004-08-27 액체회수장치, 노광장치, 노광방법 및 디바이스 제조방법
KR1020147017361A Expired - Fee Related KR101609964B1 (ko) 2003-08-29 2004-08-27 액체회수장치, 노광장치, 노광방법 및 디바이스 제조방법

Family Applications After (5)

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KR1020167008491A Expired - Fee Related KR101874724B1 (ko) 2003-08-29 2004-08-27 액체회수장치, 노광장치, 노광방법 및 디바이스 제조방법
KR1020187018319A Ceased KR20180077311A (ko) 2003-08-29 2004-08-27 액체회수장치, 노광장치, 노광방법 및 디바이스 제조방법
KR1020057011493A Expired - Fee Related KR101345020B1 (ko) 2003-08-29 2004-08-27 액체회수장치, 노광장치, 노광방법 및 디바이스 제조방법
KR1020117028493A Expired - Fee Related KR101477850B1 (ko) 2003-08-29 2004-08-27 액체회수장치, 노광장치, 노광방법 및 디바이스 제조방법
KR1020147017361A Expired - Fee Related KR101609964B1 (ko) 2003-08-29 2004-08-27 액체회수장치, 노광장치, 노광방법 및 디바이스 제조방법

Country Status (7)

Country Link
US (7) US7847916B2 (enExample)
EP (3) EP2816410B1 (enExample)
JP (13) JP4492538B2 (enExample)
KR (6) KR101321657B1 (enExample)
SG (4) SG10201607457PA (enExample)
TW (7) TWI637425B (enExample)
WO (1) WO2005022615A1 (enExample)

Families Citing this family (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101532824B1 (ko) 2003-04-09 2015-07-01 가부시키가이샤 니콘 노광 방법 및 장치, 그리고 디바이스 제조 방법
CN101825847B (zh) 2003-04-11 2013-10-16 株式会社尼康 用于沉浸式光刻光学系统的清洗方法
TWI612556B (zh) * 2003-05-23 2018-01-21 Nikon Corp 曝光裝置、曝光方法及元件製造方法
SG10201607457PA (en) 2003-08-29 2016-10-28 Nikon Corp Exposure apparatus, exposure method and device manufacturing method
TWI245163B (en) * 2003-08-29 2005-12-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP1672682A4 (en) * 2003-10-08 2008-10-15 Zao Nikon Co Ltd SUBSTRATE TRANSPORT DEVICE AND METHOD, EXPOSURE DEVICE AND METHOD AND COMPONENT MANUFACTURING METHOD
DE602004030838D1 (de) 2003-10-22 2011-02-10 Nippon Kogaku Kk Belichtungsvorrichtung, Belichtungsverfahren und Verfahren zur Herstellung einer Vorrichtung
US7411653B2 (en) * 2003-10-28 2008-08-12 Asml Netherlands B.V. Lithographic apparatus
TWI609409B (zh) 2003-10-28 2017-12-21 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造方法
TWI519819B (zh) 2003-11-20 2016-02-01 尼康股份有限公司 光束變換元件、光學照明裝置、曝光裝置、以及曝光方法
US7394521B2 (en) * 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI609410B (zh) 2004-02-06 2017-12-21 尼康股份有限公司 光學照明裝置、曝光裝置、曝光方法以及元件製造方法
US7898642B2 (en) 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101162128B1 (ko) * 2004-06-09 2012-07-03 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
JP4543767B2 (ja) * 2004-06-10 2010-09-15 株式会社ニコン 露光装置及びデバイス製造方法
JP3977364B2 (ja) 2004-09-03 2007-09-19 キヤノン株式会社 露光装置およびデバイス製造方法
US7180571B2 (en) * 2004-12-08 2007-02-20 Asml Netherlands B.V. Lithographic projection apparatus and actuator
JP4752473B2 (ja) 2004-12-09 2011-08-17 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
JP4569291B2 (ja) * 2004-12-24 2010-10-27 株式会社ニコン 露光装置及びデバイス製造方法
JP2006222165A (ja) * 2005-02-08 2006-08-24 Canon Inc 露光装置
US7324185B2 (en) 2005-03-04 2008-01-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP5040646B2 (ja) * 2005-03-23 2012-10-03 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
JP2006278795A (ja) * 2005-03-30 2006-10-12 Nikon Corp 検出装置及び露光装置、並びにデバイス製造方法
JP5239337B2 (ja) * 2005-04-28 2013-07-17 株式会社ニコン 露光方法及び露光装置、並びにデバイス製造方法
US8248577B2 (en) 2005-05-03 2012-08-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR20170089028A (ko) 2005-05-12 2017-08-02 가부시키가이샤 니콘 투영 광학계, 노광 장치 및 디바이스 제조 방법
JP2006319242A (ja) * 2005-05-16 2006-11-24 Nikon Corp 露光装置
JP2007005525A (ja) * 2005-06-23 2007-01-11 Nikon Corp 露光装置及びデバイス製造方法
JP2009515677A (ja) * 2005-11-14 2009-04-16 マイデータ オートメーション アクチボラグ 噴射装置と空気流量測定用の流量センサを使用することにより噴射装置の性能を改善する方法
US8125610B2 (en) * 2005-12-02 2012-02-28 ASML Metherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
US20070182943A1 (en) * 2006-02-06 2007-08-09 Francis Goodwin Debris apparatus, system, and method
US7532309B2 (en) * 2006-06-06 2009-05-12 Nikon Corporation Immersion lithography system and method having an immersion fluid containment plate for submerging the substrate to be imaged in immersion fluid
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US7826030B2 (en) * 2006-09-07 2010-11-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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EP2023207A1 (en) * 2007-08-10 2009-02-11 Canon Kabushiki Kaisha Exposure apparatus and device manufacturing method
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JP2009094255A (ja) 2007-10-05 2009-04-30 Canon Inc 液浸露光装置およびデバイス製造方法
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US8379187B2 (en) 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9116346B2 (en) 2007-11-06 2015-08-25 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
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EP2282188B1 (en) 2008-05-28 2015-03-11 Nikon Corporation Illumination optical system and exposure apparatus
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JP2012049437A (ja) * 2010-08-30 2012-03-08 Mitsubishi Materials Corp パワーモジュール用基板およびその製造方法
JP6171293B2 (ja) * 2012-09-13 2017-08-02 株式会社ニコン 露光装置及びデバイス製造方法
US9643217B2 (en) * 2013-10-18 2017-05-09 Taiwan Semiconductor Manufacturing Company Ltd. In situ clean apparatus and method thereof
DE102014211567B3 (de) * 2014-06-17 2015-10-29 Trumpf Werkzeugmaschinen Gmbh + Co. Kg Blechbearbeitungsmaschine mit einer Späneabsaugeinrichtung und Verfahren zum Erfassen einer Störung in der Späneabsaugeinrichtung
JP6340277B2 (ja) * 2014-07-18 2018-06-06 株式会社ディスコ 加工装置
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05176461A (ja) * 1991-12-20 1993-07-13 Yuasa Corp 交流電源装置
WO1999049504A1 (fr) 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
KR20020074232A (ko) * 2000-12-06 2002-09-28 가부시키가이샤 니콘 Ｘ선 투영 노광장치, ｘ선 투영 노광방법 및 반도체디바이스

Family Cites Families (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2373642A (en) * 1943-04-28 1945-04-17 Clark Equlpment Company Pump
US4291575A (en) * 1979-06-27 1981-09-29 Allied Chemical Corporation Liquid level monitor
DD221563A1 (de) * 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
JPH01209371A (ja) 1988-02-17 1989-08-23 Hitachi Ltd 洗浄装置
JPH01278240A (ja) * 1988-04-28 1989-11-08 Tokyo Electron Ltd 半導体製造装置用無停電電源
JPH0297239A (ja) 1988-09-30 1990-04-09 Canon Inc 露光装置用電源装置
US5298939A (en) * 1991-11-04 1994-03-29 Swanson Paul A Method and apparatus for transfer of a reticle pattern onto a substrate by scanning
JPH05199680A (ja) * 1992-01-17 1993-08-06 Honda Motor Co Ltd 電源装置
JPH06124873A (ja) 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
JP3208000B2 (ja) * 1994-03-28 2001-09-10 キヤノン株式会社 基板保持システム
US5528118A (en) 1994-04-01 1996-06-18 Nikon Precision, Inc. Guideless stage with isolated reaction stage
US5874820A (en) * 1995-04-04 1999-02-23 Nikon Corporation Window frame-guided stage mechanism
US5623853A (en) 1994-10-19 1997-04-29 Nikon Precision Inc. Precision motion stage with single guide beam and follower stage
JPH0921471A (ja) 1995-07-06 1997-01-21 Toyota Motor Corp チェック弁
JP2872637B2 (ja) * 1995-07-10 1999-03-17 アプライド マテリアルズ インコーポレイテッド マイクロ波プラズマベースアプリケータ
JP3433403B2 (ja) * 1995-10-16 2003-08-04 三星電子株式会社 ステッパのインタフェース装置
JPH1095131A (ja) 1996-09-20 1998-04-14 Seiko Epson Corp 不使用ノズルの保護方法およびインクカートリッジ
US5825043A (en) * 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
JP4029182B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 露光方法
JP4029183B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置及び投影露光方法
JPH10163009A (ja) 1996-11-29 1998-06-19 Taiyo Yuden Co Ltd 電圧依存非直線抵抗体の製造方法
WO1998028665A1 (en) 1996-12-24 1998-07-02 Koninklijke Philips Electronics N.V. Two-dimensionally balanced positioning device with two object holders, and lithographic device provided with such a positioning device
JPH10211948A (ja) 1997-01-28 1998-08-11 Yoshino Kogyosho Co Ltd 液体噴出ポンプ
JP3951150B2 (ja) 1997-04-09 2007-08-01 Ｓｍｃ株式会社 サックバックバルブ
US6355397B1 (en) * 1997-04-11 2002-03-12 Taiwan Semiconductor Manufacturing Company Method and apparatus for improving resist pattern developing
JP3747566B2 (ja) 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JP3817836B2 (ja) * 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
JP4026943B2 (ja) * 1997-09-04 2007-12-26 キヤノン株式会社 露光装置およびデバイス製造方法
KR20010031972A (ko) * 1997-11-12 2001-04-16 오노 시게오 노광 장치, 디바이스 제조 장치 및 노광 장치의 제조 방법
JPH11176727A (ja) * 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
JPH11285167A (ja) 1998-03-27 1999-10-15 Canon Inc 半導体デバイス等の製造装置と製造方法、ならびに電力供給システム
JP2001319871A (ja) * 2000-02-29 2001-11-16 Nikon Corp 露光方法、濃度フィルタの製造方法、及び露光装置
JP2002015978A (ja) 2000-06-29 2002-01-18 Canon Inc 露光装置
JP2002091177A (ja) * 2000-09-19 2002-03-27 Hitachi Ltd 液体現像装置、そのメンテナンス方法および液体現像装置からの補充液回収方法
JP2002141278A (ja) 2000-11-07 2002-05-17 Canon Inc デバイス製造装置、露光装置およびデバイス製造方法
US20020129838A1 (en) * 2001-03-15 2002-09-19 Larry Myland Substrate aspiration assembly
JP2002373852A (ja) * 2001-06-15 2002-12-26 Canon Inc 露光装置
WO2003008102A1 (en) * 2001-07-18 2003-01-30 The Regents Of The University Of Michigan Microfluidic gravity pump with constant flow rate
JP2003115451A (ja) * 2001-07-30 2003-04-18 Canon Inc 露光装置及びそれを用いたデバイスの製造方法
DE10141813A1 (de) 2001-08-27 2003-05-08 Siemens Ag Datenübermittlung an Gruppen von Empfängern
AU2003256095A1 (en) * 2002-07-31 2004-02-16 Bon-Gil Koo Liquid composition for protecting oral cavities and teeth of pet animals and use thereof in plaything for pet animals
US7367345B1 (en) 2002-09-30 2008-05-06 Lam Research Corporation Apparatus and method for providing a confined liquid for immersion lithography
TWI232357B (en) * 2002-11-12 2005-05-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP3953460B2 (ja) * 2002-11-12 2007-08-08 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ投影装置
SG121822A1 (en) * 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
CN101424883B (zh) * 2002-12-10 2013-05-15 株式会社尼康 曝光设备和器件制造法
WO2004092830A2 (en) * 2003-04-11 2004-10-28 Nikon Corporation Liquid jet and recovery system for immersion lithography
JP3862678B2 (ja) * 2003-06-27 2006-12-27 キヤノン株式会社 露光装置及びデバイス製造方法
EP1498778A1 (en) * 2003-06-27 2005-01-19 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1494074A1 (en) * 2003-06-30 2005-01-05 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101935709B1 (ko) * 2003-07-28 2019-01-04 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법
US7779781B2 (en) 2003-07-31 2010-08-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
SG10201607457PA (en) * 2003-08-29 2016-10-28 Nikon Corp Exposure apparatus, exposure method and device manufacturing method
US7411653B2 (en) * 2003-10-28 2008-08-12 Asml Netherlands B.V. Lithographic apparatus
JP5132374B2 (ja) 2008-03-18 2013-01-30 三洋電機株式会社 固体電解コンデンサ及びその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05176461A (ja) * 1991-12-20 1993-07-13 Yuasa Corp 交流電源装置
WO1999049504A1 (fr) 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
KR20020074232A (ko) * 2000-12-06 2002-09-28 가부시키가이샤 니콘 Ｘ선 투영 노광장치, ｘ선 투영 노광방법 및 반도체디바이스

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