KR101318219B1 - 반도체장치와 반도체장치의 제조방법 - Google Patents

반도체장치와 반도체장치의 제조방법 Download PDF

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KR101318219B1
KR101318219B1 KR1020120005054A KR20120005054A KR101318219B1 KR 101318219 B1 KR101318219 B1 KR 101318219B1 KR 1020120005054 A KR1020120005054 A KR 1020120005054A KR 20120005054 A KR20120005054 A KR 20120005054A KR 101318219 B1 KR101318219 B1 KR 101318219B1
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South Korea
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carrier concentration
collector layer
peak position
semiconductor device
concentration peak
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KR20120085663A (ko
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시게토 혼다
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미쓰비시덴키 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
KR1020120005054A 2011-01-24 2012-01-17 반도체장치와 반도체장치의 제조방법 Active KR101318219B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011012325A JP5621621B2 (ja) 2011-01-24 2011-01-24 半導体装置と半導体装置の製造方法
JPJP-P-2011-012325 2011-01-24

Publications (2)

Publication Number Publication Date
KR20120085663A KR20120085663A (ko) 2012-08-01
KR101318219B1 true KR101318219B1 (ko) 2013-10-15

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KR1020120005054A Active KR101318219B1 (ko) 2011-01-24 2012-01-17 반도체장치와 반도체장치의 제조방법

Country Status (5)

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US (1) US8614448B2 (enExample)
JP (1) JP5621621B2 (enExample)
KR (1) KR101318219B1 (enExample)
CN (1) CN102610634B (enExample)
DE (1) DE102011088624B4 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013069113A1 (ja) * 2011-11-09 2013-05-16 トヨタ自動車株式会社 半導体装置およびその製造方法
JP6265594B2 (ja) * 2012-12-21 2018-01-24 ラピスセミコンダクタ株式会社 半導体装置の製造方法、及び半導体装置
JP6219044B2 (ja) * 2013-03-22 2017-10-25 株式会社東芝 半導体装置およびその製造方法
JP6844130B2 (ja) * 2015-08-18 2021-03-17 富士電機株式会社 半導体装置及びその製造方法
JP7119350B2 (ja) * 2017-11-22 2022-08-17 富士電機株式会社 縦型ＧａＮ系半導体装置の製造方法および縦型ＧａＮ系半導体装置
JP7010184B2 (ja) * 2018-09-13 2022-01-26 株式会社デンソー 半導体装置
JP7249586B2 (ja) * 2019-03-18 2023-03-31 国立大学法人東海国立大学機構 窒化物半導体装置の製造方法
JP7687514B2 (ja) * 2022-02-17 2025-06-03 富士電機株式会社 半導体装置およびその製造方法

Citations (1)

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KR100726899B1 (ko) * 2004-05-13 2007-06-14 미쓰비시덴키 가부시키가이샤 반도체 장치

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US4782379A (en) * 1981-11-23 1988-11-01 General Electric Company Semiconductor device having rapid removal of majority carriers from an active base region thereof at device turn-off and method of fabricating this device
US5264378A (en) 1990-04-20 1993-11-23 Fuji Electric Co., Ltd. Method for making a conductivity modulation MOSFET
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JP2663679B2 (ja) 1990-04-20 1997-10-15 富士電機株式会社 伝導度変調型ｍｏｓｆｅｔ
JPH08288500A (ja) * 1995-04-20 1996-11-01 Hitachi Ltd 炭化珪素半導体素子とその製造法及び用途
JP3727827B2 (ja) * 2000-05-15 2005-12-21 株式会社東芝 半導体装置
CN1268003C (zh) 2001-02-01 2006-08-02 三菱电机株式会社 半导体器件及其制造方法
DE10104776A1 (de) 2001-02-02 2002-08-22 Infineon Technologies Ag Bipolartransistor und Verfahren zu dessen Herstellung
JP4023773B2 (ja) 2001-03-30 2007-12-19 株式会社東芝 高耐圧半導体装置
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JP4967205B2 (ja) * 2001-08-09 2012-07-04 富士電機株式会社 半導体装置の製造方法
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Also Published As

Publication number Publication date
US20120187416A1 (en) 2012-07-26
DE102011088624A1 (de) 2012-07-26
US8614448B2 (en) 2013-12-24
KR20120085663A (ko) 2012-08-01
JP5621621B2 (ja) 2014-11-12
DE102011088624B4 (de) 2016-06-02
JP2012156207A (ja) 2012-08-16
CN102610634B (zh) 2015-07-15
CN102610634A (zh) 2012-07-25

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